PHASE TRANSITIONS IN Bi2Sr2(Cu1-zFez)O6+δ

We have investigated, by X-ray diffraction, a series of single crystals of Bi-based oxides with the nominal composition Bi₂Sr₂(Cu_1-zFe_z)O_6+δ(0≤z≤0.55). In this system we observed two structural phase transitions with the increase of the doping content. The first transition, from an incommensurate monoclinic phase to an incommensurate orthorhombic phase, occurs at a doping content of iron z_Fe=0.027. The second one corresponds to a phase transition from an incommensurate orthorhombic phase to a commensurate orthorhombic phase at z_Fe=0.34. The comparison of these results with those for more limited substitutions of Zn and Ni indicates the significant role of the insertion of the extra oxygen in the (Bi-O)_∞ double layers.     

STRUCTURE AND PROPERTIES OF THE La-DOPED Bi-2201 SYSTEM

In this article, the influence of La substitution for Sr on structure and physi-cal properties of the 2201 phase is studied. First, the crystal microstructure of the Bi_2.1Sr_1.9-xLa_xCuO_y (0≤x≤1.0) is characterized by means of X-ray diffraction and electron diffraction analyses, it is discovered that in the La-doped 2201 system with increasing La content the 2201 phase undergoes tetragnoal-orthorhombic-monoclinic structural transition. With this phase transition, the modulation vector of the 2201 phase transforms from incommensurate to commensurate, and the period of the mod- ulation wave decreases. Secondly, the superconductivity of this system is analyzed systematically. The results of the resistivity measurement show that the appropriate amount of La doping can raise the superconducting transition temperature (T_c) of the 2201 phase, with x=0.2, T_c reaches as high as 25K. However the excessive doping of La (x≥0.3) leads the 2201 phase to transit from metal to insulator and the su-perconductivity disappears. The measurement of thermoelectric power (TEP) of this system shows that with increasing La content the TEP value also increases gradu-ally. But the interesting point is that the transition from positive to negative in TEP occurs for x=0.2 sample. In addition, the electronic structure and oxygen content of this system are also studied. Based on these, we analyze the relation between the microstructure, electronic structure of the La-doped 2201 phase and its superconduc-tivity, indicating that the type of element substitution with higher valence, together with the microstructural distortion induced by the substitution affects the electronic states of Cu 3d seriously, that is, changes the degree of coulomb correlation of Cu 3d electrons, thus resulting in the transition of the type of carrier of this system and the decrease of hole carrier concentration, as well as the corresponding variation of the superconductivity of La-doped 2201 phase.     

The effect of Si content on the martensitic transfor-mation temperature of Ni55.5e18Ga26.5-xSix alloys

This paper investigates the effects of substitution of Si for Ga on the martensitic transformation behaviours in Ni-Fe-Ga alloys by using optical metallographic microscope and differential scanning calorimetry (DSC) methods. The structure type of Ni_55.5Fe₁₈Ga_26.5-xSi_x alloys is determined by x-ray diffraction (XRD), and the XRD patterns show the microstructure of Ni-Fe-Ga-Si alloys transformed from body-centred tetragonal martensite (with Si content x = 0) to body-centred cubic austenite (with x = 2) at room temperature. The martensitic transformation temperatures of the Ni_55.5Fe₁₈Ga_26.5-xSi_x alloys decrease almost linearly with increasing Si content in the Si content range of x ≤ 3. Thermal treatment also plays an important role on martensitic transformation temperatures in the Ni-Fe-Ga-Si alloy. The valence electronic concentrations, size factor, L2₁ degree of order and strength of parent phase influence the martensitic transformation temperatures of the Ni-Fe-Ga-Si alloys. An understanding of the relationship between martensitic transformation temperatures and Si content will be significant for designing an appropriate Ni-Fe-Ga-Si alloy for a specific application at a given temperature.     

Phase transition and thermodynamic properties of ThO2：Quasi-harmonic approximation calculations and anharmonic effects

The thermodynamic properties and the phase transition of ThO2 from the cubic structure to the orthorhombic structure are investigated using the first-principles projector-augmented wave method. The vibrational contribution to Helmholtz free energy is evaluated from the first-principles phonon calculations. The anharmonic contribution to quasi-harmonic free energy is accounted for by using an effective method(2010 Phys. Rev. B 81 172301). The results reveal that at ambient temperature, the phase transition from the cubic phase to the orthorhombic phase occurs at 26.45 GPa, which is consistent with the experimental and theoretical data. With increasing temperature, the transition pressure decreases almost linearly. By comparing the experimental results with the calculation results, it is shown that the thermodynamic properties of ThO2 at high temperature improve substantially after including the anharmonic correction to quasi-harmonic free energy.     

THERMALLY ACTIVATED HOPPING IN Dy1-xPrxBa2Cu3O7-δ SYSTEM

The temperature dependence of resistivity in Dy_1-xPr_xBa₂Cu₃O_7-δ system with x>0.6 was measured. The experimental results show that Pr substitution leads to the localization of mobile holes and such a localization is enhanced with increasing Pr concentration. The gradually enhancing of localization induces Anderson transitions one by one in this system, including the transition from the conduction by excitation of holes to the one by thermal activation hopping between localized states, the so called Anderson transition type-I, and the transition from nearest neighbor hopping (NNH) to variable range hopping (VRH), the Anderson transition type-II, and the Anderson transition type-lI from 3D to 2D.     

RAMAN STUDIES ON THE PHASE TRANSITIONS OF (NH4)2SnBr6 CRYSTALS

We report here the structural phase transitions of the crystal (NH₄)₂SnBr₆ investigated by Raman scattering at temperatures ranging from 10K to room temperature. Two phase transitions occurring at 150 and ll0K are found. Based on the group theory, it is proposed that the crystal undergoes a second-order phase transition at 150 K, resulting from a ferro-distortion with symmetry Γ⁴⁺. The change of structure is confirmed to be O⁵_h to C⁵_4h, which is assigned to the rotary of [SnBr₆]^2- ion groups around the axis of <001>. Furthermore the crystal undergoes an order-disorder phase transition at ll0K which is related with the reorientation of the ammonium ion group. It is noticed that the change of the vibrational modes at 77K does not show any phase transition.     

A method based on magnetic moment measurement to identify the structural transition of quenched Fe1 -xGax (x = 0.15ben 0.30) alloys

A method based on the measurement of Fe average atomic magnetic moment to identify the structural transition caused by the increase of Ga content in quenched Fe_{1 - x}Ga_x alloys (0.15 ≤ x ≤ 0.30) is proposed. The quenched Fe_{1 - x}Ga_x alloys show a change of the Fe average atomic magnetic moment from 2.25 μ_B to 1.78 μ_B and then to 1.58 μ_B, which corresponds to the structural transition from A2 to D0₃ and then to B2. The relationship between the structure and the magnetostriction is clarified, and the maximum magnetostriction appears in the A2 phase. The variation tendency of the magnetostriction is well characterized, which also reflects the structural transition.     

INFLUENCE OF γ-RADIATION ON THE DIELECTRIC CHARACTERISTICS IN Rb2ZnCl4 SINGLE CRYSTALS AT INCOMMENSURATE-COMMENSURATE PHASE TRANSITION

In this paper the influence of γ-radiation on the dielectric constants of Rb₂ZnCl₄ crystal at incommensurate-commensurate phase transition (hereafter abbreviated as INC-C transition) are studied. The thermal hysteresis occurs upon both cooling and heating runs, irrespective of whether the samples have been treated with γ-radiation or not. For the γ-irradiated sample, its transition point, T_c, between the INC and C phases is not changed, but the peak value of the dielectric constant at T_c increases abruptly, compared with that before γ-irradiation, When this sample is annealed at 40℃, the peak value restores to the incipient value for the sample free from γ-irradiation. The origin of the phenomenon of the thermal hysteresis of the dielectric constant may be due to the pinning effect of dejects or impurities in the samples.     

EFFECT OF THE Ba VACANCY ON THE FLUX PINNING IN YBaxCu3O7-δ SYSTEM

A series of Y123 single phase samples with various Ba vacancy concentration was prepared by making their Ba contents deviate from the stoichiometric composition. The measurements of their structure, superconductivity and flux pinning behaviour were systematically carried out. It is found that, compared with YBa₂Cu₃O_6.96 sample, the strength of the flux pinning in YBa_xCu₃O_7-δ(1.8≤x<2.0) samples is increased, and that there is an optimum value of Ba vacancy concentration for the maximum flux pinning force density. The possible origin of the flux pinning centers to determine the flux pinning behavior at higher field is discussed in detail. We suggest that the flux pinning effect at lower field may stein from the interaction between the vortex and the surfaces of grains, and that the flux pinning mechanism at higher field belongs to the core interaction.     

EFFECT OF THE SUBSTITUTION OF Ga ON THE STRUCTURE AND MAGNETIC PROPERTIES OF Dy2Fe17 COMPOUND

Dy₂Fe_17-xGa_x (x = 0,1,2,3,4, 5 and 6) compounds were prepared by arc melting. These compounds are of single phase, having a hexagonal Th₂Ni₁₇-type structure fox x=0 and rhombohedral Th₂Zn₁₇-type structure for x≥1. The substitution of Ga for Fe in the Dy₂Fe₁₇ leads to a linear increase of unit-cell volumes. The saturation magnetization M_s at 1.5K is found to decrease linearly with increasing Ga concentration, from 65emu/g for x= 0 to 5emu/g for x = 6; and the Fe magnetic moment μ_Fe is almost independent of Ga concentration. The Curie temperature T_C is found first to increase with increasing Ga content x, and goes through a maximum value of 559 K at about x = 3, then decreases. The sharp increase of T_C at lower Ga content may result from the increase of unit cell volumes. Dy₂Fe_17-xGa_x compounds with x≤5 exhibit easy plane anisotropy at room temperature, and those with x = 6 possess easy-axis.     

Quantum transformation of spin structure of a Fe8 nanocluster in ultrastrong magnetic fields

The transformation of the spin structure of a high-spin Fe₈ cluster in a strong magnetic field has been investigated. The magnetization and magnetic susceptibility of the material are calculated at different external magnetic fields and temperatures. It is shown that the magnetic field induces transformation of the spin structure of a Fe₈ cluster from the quasi-ferrimagnetic structure with an average magnetic moment of 20 μ_B per molecule to the quasi-ferromagnetic structure with a magnetic moment of 40 μ_B. Unlike a similar transformation of a Néel ferrimagnet, which is continuous and occurs through an intermediate angular phase, this process in Fe₈ at low temperatures manifests itself as a cascade of discrete quantum jumps, each being the transition accompanied by an increase in the spin number of the complex. At high temperatures, the behavior of the magnetic cluster approaches the cluster behavior described by the classical theory. The nature of quantum jumps is discussed in terms of the magnetic-field-induced energy level crossing in the ground state of a magnetic cluster. __________ Translated from Fizika Tverdogo Tela, Vol. 42, No. 6, 2000, pp. 1068–1072. Original Russian Text Copyright ? 2000 by Zvezdin, Plis, Popov.     

Magnetic properties and magnetoresistance effect of Y1-xGdxMn6Sn6 (x=0－1) compounds

The magnetic properties and magnetoresistance effect of Y_1-xGd_xMn₆Sn₆ (x=0－1) compounds have been investigated by magnetization and resistivity measurements in the applied field range (0－5 T). Compounds with x=0.4－1 display ferrimagnetic behaviours in the whole magnetic ordering temperature range, while compounds with x=0－0.2 display a field-induced metamagnetic transition, and the threshold fields decrease with increasing Gd content. The compounds with x=0.1－0.2 undergo an antiferromagnetic to ferromagnetic transition with increasing temperature. The cell-parameter a and c and cell-volume V of compounds (x=0－1) increase with increasing Gd content. It was found that the saturation magnetization M_s of the compounds (x=0.4－1) decreases, while the ordering points of the compounds (x=0－1)increase with increasing Gd content. A large MR effect was observed in the compound with x=0.2, and the maximum absolute value of MR at 5 K under 3 T is close to 19.3%.     

RAMAN SCATTERING OF α-ET3(ReO4)2 CHARGE-TRANSFER SALT

We describe the results of Haman studies on C=C stretch modes in α-ET₃(ReO₄)₂ charge-transfer salt with the incident laser beam polarised perpendicular and parallel to the large flat face of plate-like crystal. We have assigned central C=C stretch mode at 1454 cm^-1 and ring C=C stretch mode at 1470cm^-1. The change in ring C=C stretch vibration was observed at the metal-insulator transition of α-ET₃(ReO₄)₂ on warming due to the distortion of the ET molecules.     

STRUCTURE, MAGNETIC PROPERTIES AND GIANT MAGNETORESISTANCE OF YMn6Sn6-xGax (x=0-0.6) COMPOUNDS

Structure, magnetic and transport properties of YMn₆Sn_6-xGa_x (0≤x≤0.6) compounds with a HfFe₆Ge₆-type structure were investigated. It was found that the Ga substitution leads to a contraction of the unit-cell volume. A transition from an antiferromagnetic to a ferromagnetic (or ferrimagnetic) state can be observed for samples (0.1≤x≤0.2) with increasing temperature. The antiferro-ferromagnetic transition for samples with x≤0.2 can also be induced by an external field. The required field is very low, and decreases with increasing Ga concentration. More Ga concentration (x≥0.3) leads to the samples being ferromagnetic in the whole temperature range below the Curie temperature. The Ga substitution weakens the interlayer magnetic coupling between the Mn spins. Corresponding to the metamagnetic transition, a magnetoresistance as large as 32% under a field of 5 T was observed at 5 K for the sample with x=0.2.     

boldmath Characterization of the BaBiO3-doped BaTiO3 positive temperature coefficient of a resistivity ceramic using impedance spectroscopy with Tc=155℃

BaBiO₃-doped BaTiO₃ (BB-BT) ceramic, as a candidate for lead-free positive temperature coefficient of resistivity (PTCR) materials with a higher Curie temperature, has been synthesized in air by a conventional sintering technique. The temperature dependence of resistivity shows that the phase transition of the PTC thermistor ceramic occurs at the Curie temperature, T_c=155 ℃, which is higher than that of BaTiO₃ ( ≤ 130 ℃). Analysis of ac impedance data using complex impedance spectroscopy gives the alternate current (AC) resistance of the PTCR ceramic. By additional use of the complex electric modulus formalism to analyse the same data, the inhomogeneous nature of the ceramic may be unveiled. The impedance spectra reveal that the grain resistance of the BB-BT sample is slightly influenced by the increase of temperature, indicating that the increase in overall resistivity is entirely due to a grain-boundary effect. Based on the dependence of the extent to which the peaks of the imaginary part of electric modulus and impedance are matched on frequency, the conduction mechanism is also discussed for a BB-BT ceramic system.     

窄带隙KNb1-xFexO3-δ的室温铁磁性

We have investigated the structure, optical and magnetic properties of ferroelectric KNb_1-xFexO_3-δ (X=0, 0.01, 0.03, 0.05, 0.10, 0.15, 0.20, 0.25) synthesized by a traditional solid-state reaction method. According to the X-ray diffraction and the results of Rietveld refinement, all the samples maintain orthorhombic distorted perovskite structures with Amm2 space group without any secondary phase, suggesting the well incorporation of Fe ions into the KNbO₃ matrix. With the increase of Fe concentration, the band gap of each sample is decreased gradually, which is much smaller than the 3.18 eV band gap of pure KNbO₃. Through X-ray photoelectron spectrum analysis, the increased density of oxygen vacancy and Fe ions may be responsible for the observed decrease in band gap. Compared with the pure KNbO₃, Fe doped samples exhibit room-temperature weak ferromagnetism. The ferromagnetism in KNb_1-xFexO_3-δ with low-concentration dopants (X=0.01-0.10) can be attributed to the bound magnetic polaron mediated exchange. The enhancement of magnetism for the high-concentration (X=0.10-0.20) doped samples may arise from the further increase of magnetic Fe ions.     

EPR Study of Fe3+- and Ni2+-Doped Macroporous CaSiO3 Ceramics

Thermally stable macroporous CaSiO₃, Fe³⁺- and Ni²⁺-doped (0.5 to 5 mol%) ceramics have been prepared by solution combustion process by mixing respective metal nitrates (oxidizers), fumed silica. Diformol hydrazine is used as a fuel. The combustion products were identified by their X-ray diffraction and thermal gravimetry/differential thermal analysis. Single phases of β-CaSiO₃ and α-CaSiO₃ were observed at 950 and 1200 °C, respectively. The phase transition temperatures of combustion-derived CaSiO₃ were found to be lower compared to those obtained via solid-state reaction method. It is interesting to note that with an increase in the calcination temperature the samples become more porous with an increase in the pore diameter from 0.2 to 8 μm. The electron paramagnetic resonance (EPR) spectrum of Fe³⁺ ions in CaSiO₃ exhibits a weak signal at g = 4.20 ± 0.1 followed by an intense signal at g = 2.0 ± 0.1. The signal at g = 4.20 is ascribed to isolated Fe³⁺ ions at rhombic site. The signal at g = 2.0 is due to Fe³⁺ coupled together with dipolar interaction. In Ni²⁺-doped CaSiO₃ ceramics the EPR spectrum exhibits a symmetric absorption at g = 2.23 ± 0.1. This deviation from the free electron g-value is ascribed to octahedrally coordinated Ni²⁺ ions with moderately high spin–orbit coupling. The number of spins participating in resonance and the paramagnetic susceptibilities have been evaluated from EPR data as a function of Fe³⁺ as well as Ni²⁺ content. The effect of alkali ions (Li, Na and K) on the EPR spectra of these ceramics has also been studied. Authors' address: R. P. Sreekanth Chakradhar, Glass Technology Laboratory, Central Glass and Ceramic Research Institute, Kolkata 700032, India     

Development and characteristic analysis of a field-plated Al2O3/AlInN/GaN MOS–HEMT

We present an AlInN/AlN/GaN MOS–HEMT with a 3 nm ultra-thin atomic layer deposition (ALD) Al₂O₃ dielectric layer and a 0.3 μm field-plate (FP)-MOS--HEMT. Compared with a conventional AlInN/AlN/GaN HEMT (HEMT) with the same dimensions, a FP-MOS--HEMT with a 0.6 μm gate length exhibits an improved maximum drain current of 1141 mA/mm, an improved peak extrinsic transconductance of 325 mS/mm and effective suppression of gate leakage in both the reverse direction (by about one order of magnitude) and the forward direction (by more than two orders of magnitude). Moreover, the peak extrinsic transconductance of the FP-MOS--HEMT is slightly larger than that of the HEMT, indicating an exciting improvement of transconductance performance. The sharp transition from depletion to accumulation in the capacitance--voltage (C--V) curve of the FP-MOS--HEMT demonstrates a high-quality interface of Al₂O₃/AlInN. In addition, a large off-state breakdown voltage of 133 V, a high field-plate efficiency of 170 V/μ m and a negligible double-pulse current collapse is achieved in the FP-MOS--HEMT. This is attributed to the adoption of an ultra-thin Al₂O₃ gate dielectric and also of a field-plate on the dielectric of an appropriate thickness. The results show a great potential application of the ultra-thin ALD-Al₂O₃ FP-MOS--HEMT to deliver high currents and power densities in high power microwave technologies.     

Solvent effects on the S0→S2 absorption spectra of β-carotene

Absorption spectra of β -carotene in 31 solvents are measured in ambient conditions. Solvent effects on the 0--0 band energy, the bandwidth, and the transition moment of the S₀ → S₂ transition are analysed. The discrepancies between published results of the solvent effects on the 0--0 band energy are explained by taking into account microscopic solute-solvent interactions. The contributions of polarity and polarizability of solvents to 0--0 band energy and bandwidth are quantitatively distinguished. The 0--0 transition energy of the S₂ state at the gas phase is predicted to locate between 23000 and 23600~cm^-1.     

ELECTRONIC STRUCTURE OF Hg0.8Pb0.2Ba2Ca2Cu3O8+δ: THE ROLE OF Pb DOPING, OXYGEN DOPING AND HIGH PRESSURE

The effects of Pb doping, oxygen doping (δ= 0.1,0.2,0.4 and 0.5) and high pressate (4, 8, 15 and 20GPa) on the electronic structure of Hg_0.8Pb_0.2Ba₂Ca₂Cu₃O_8+δ have been examined by the recursion method. Our calculations show that Pb doping only decreases the hole concentration slightly and oxygen doping increases the hole concentration monotonically and significantly as δ varies from 0 to 0.5, with each excess oxygen atom contributing about 1.7 holes to the CuO₂ layers. The optimal δ is estimated to be around 0.4, The hole conceatration increases initially with pres-sure but decreases as P > 8GPa (i.e., dn/dP does change sign at ～ 8GPa). The suppressed T_c(P) by Pb substitution has to be described in the modified Neumeier's model.