Characterization of the BaBiO3-doped BaTiO3 positive temperature coefficient of a resistivity ceramic using impedance spectroscopy with Tc=155℃

BaBiO 3-doped BaTiO3(BB-BT) ceramic,as a candidate for lead-free positive temperature coefficient of resistivity (PTCR) materials with a higher Curie temperature,has been synthesized in air by a conventional sintering technique. The temperature dependence of resistivity shows that the phase transition of the PTC thermistor ceramic occurs at the Curie temperature,Tc=155℃,which is higher than that of BaTiO3(≤130℃). Analysis of ac impedance data using complex impedance spectroscopy gives the alternate current (AC) resistance of the PTCR ceramic. By additional use of the complex electric modulus formalism to analyse the same data,the inhomogeneous nature of the ceramic may be unveiled. The impedance spectra reveal that the grain resistance of the BB-BT sample is slightly influenced by the increase of temperature,indicating that the increase in overall resistivity is entirely due to a grain-boundary effect. Based on the dependence of the extent to which the peaks of the imaginary part of electric modulus and impedance are matched on frequency,the conduction mechanism is also discussed for a BB-BT ceramic system.     

IRREVERSIBILITY LINE AND THERMAL DEPINNING IN YBa2Cu3O7-δ

By measuring magnetic torque moment in a field-sweeping process, the temperature and field dependence of the critical current density j (with a criterion of electric field) and the normalized relaxation rate Q = d lnj/d ln E of a YBa₂Cu₃O_7-δ thin film were obtained. With a minimum current density (j_min = 10A·cm^-2) the irreversibility lines at different sweeping rates were determined. It was found that these irreversibility lines cannot be fitted to either the melting line or the vortex-glass transition. All the data can be interpreted by the thermally-assisted-flux-flow model. Further investigation shows that, at irreversible tem-perature and field, U_c is much smaller than k_BT, which indicates that the thermal depinning is the real origin of the irreversibility line.     

POSITRON LIFETIME STUDIES OF Y1-xCaxBa2Cu3O7-δ AND Y1-xCaxBa2Cu3-xFexO7-δ

In this paper it is reported that the measurement of the bulk positron lifetime as a function of substitution content x in the temperature range from 70 to 220K was performed in two high-T_c superconducting systems, Y_1-xCa_xBa₂Cu_3-xFe_xO_7-δ and Y_1-xCa_xBa₂Cu₃O_7-δ. It was found that τ_B of both systems decreases significantly with x and the temperature dependence of τ_B is very weak in normal state. In lower temperature region (Tc), a dramatic x-dependent temperature variation of τ_B was observed in the Ca-substituted system: from a decrease of τ_B with decreasing T to an increase of τ_B. With increasing x, the temperature dependence of τ_B remains weak in the Ca- and Fe- substituted systems. Compared with the experimental data of positron lifetime in other substituted systems and the calculation of the positron density distribution, the authors suggest that positron bulk lifetime spectra behaviour can be interpreted by the physical model based on the transfer of electron density between the CuO₂ planes and Cu-O chains. Therefore, the study of positron lifetime spectra provides a useful means to detect the local charge density and to study the correlation between the electronic structure and the high-T_c superconductivity.     

THERMALLY ACTIVATED HOPPING IN Dy1-xPrxBa2Cu3O7-δ SYSTEM

The temperature dependence of resistivity in Dy_1-xPr_xBa₂Cu₃O_7-δ system with x>0.6 was measured. The experimental results show that Pr substitution leads to the localization of mobile holes and such a localization is enhanced with increasing Pr concentration. The gradually enhancing of localization induces Anderson transitions one by one in this system, including the transition from the conduction by excitation of holes to the one by thermal activation hopping between localized states, the so called Anderson transition type-I, and the transition from nearest neighbor hopping (NNH) to variable range hopping (VRH), the Anderson transition type-II, and the Anderson transition type-lI from 3D to 2D.     

Study on the in—plane electrical resistivity and thermoelectric power in single crystals of La2—xBaxCuO4

The in-plane electrical resistivity and thermoelectric power have been measured on single crystals of La_2-xBa_xCuO₄ at around x=0.125. The room temperature resistivity and thermopower have their maximum values at x=0.125, indicating that the carrier concentration is the minimum and the carriers are most strongly localized at x=0.125. The observed semiconductor-like behaviour can be well described by the weak-localized quasi-two-dimensional state. The steep rise in electric resistivity of the sample at x=0.125 below 70K is attributed to the formation of static stripe-order of holes and spins, which are pinned by the low-temperature tetragonal (LTT) structure, as discovered in La_1.48Nd_0.4Sr_0.12CuO₄. The temperature dependence of electric resistivity below 70K is still well described by the formula ρ∝ lnT. A definite change in the slope of thermopower is observed at the low-temperature orthorhombic-LTT structural phase transition temperature. The origin of the 1/8 anomaly is discussed in the text.     

NON-EQUILIBRIUM MICROWAVE RESPONSE OF Yba2Cu3O7-δ GRANULAR THIN FILMS UNDER MAGNETIC FIELDS

Microwave responses of YBa₂Cu₃O_7-δ(YBCO) granular film have been studied at the microwave frequency of 30.5 GHz. In the absence of a magnetic field the dependence of a normal microwave response on the bias current is observed at a temperature close to T_c. When a magnetic field ranged from 5.0 mT to 33.0 mT is applied, the responses broaden and shift toward a lower temperature. In the superconducting state, the responses were found to be highly dependent on the magnetic field. For the current equal to 5.0mA and a magnetic field above 17.0mT the response increases and did not vanish even at a very low temperature, the fact is believed to be correlated to the anisotropic character of the structure.     

Intrinsic tunneling study of underdoped Bi2Sr2-xLaxCuO6+δ superconductors

We report on a tunneling study of underdoped submicron Bi₂Sr_2-xLa_xCuO_6+δ (La-Bi2201) intrinsic Josephson junctions (IJJs), whose self-heating is sufficiently suppressed. The tunneling spectra are measured from 4.2 K up to the pseudogap opening temperature of T^* = 260 K. The gap value found from the spectral peak position is about 35 meV and has a weak temperature dependence both below and above the superconducting transition temperature of T_c = 29 K. Since the superconducting gap should have a value of 10-15 meV, our results indicate that the pseudogap (～35 meV) plays an important role in the underdoped La-Bi2201 intrinsic tunneling spectroscopy down to the lowest temperature of 4.2 K. However, the contribution of the superconducting gap can be separated by normalizing the spectra to the one near and above T_c, which shows that the IJJs can be a useful tool for the study of the electronic properties of the La-Bi2201 cuprate superconductors.     

SUPERCONDUCTING TRANSITION TEMPERATURES AND NORMAL-STATE ELECTRICAL RESISTIVITIES OF Tm1-xPrxBa2Cu3O7-δ

Superconducting transition temperature T_c and normal-state electrical resistivities ρ of the Tm_1-xPr_xBa₂Cu₃O_7-δ system have been measured. The results indicate that T_c remains constant for x = 0 to 0.08 before it drops steadily with higher x. Following the Abrikosov-Gor'kov model, a total suppression of superconductivity occurs at a critical Pr concentration x_cr≈0.56. It is found for the first time, as far as we know, that the logarithmic resistivity at 270 K increases linearly with increasing x, yielding ρ= ρ₀e^ax. Judging from the relation between dρ/dT and x, a metal to insulator transition occurs just beyond x_cr.     

过渡金属掺杂在Na0.5Bi0.5TiO3体系中诱导产生磁性的第一性原理研究

The origins of magnetism in transition-metal doped Na_0.5Bi_0.5TiO₃ system are investigated by ab initio calculations. The calculated results indicate that a transition-metal atom substitution for a Ti atom produces magnetic moments, which are due to the spin-polarization of transition-metal 3d electrons. The characteristics of exchange coupling are also calculated, which shows that in Cr-/Mn-/Fe-/Co-doped Na_0.5Bi_0.5TiO₃ system, the antiferromagnetic coupling is favorable. The results can successfully explain the experimental phenomenon that, in Mn-/Fe-doped Na_0.5Bi_0.5TiO₃ system, the ferromagnetism disappears at low temperature and the paramagnetic component becomes stronger with the increase of doping concentration of Mn/Fe/Co ions. Unexpectedly, we find the Na_0.5Bi_0.5Ti_0.67V_0.33iO₃ system with ferromagnetic coupling is favorable and produces a magnetic moment of 2.00 μB, which indicates that low temperature ferromagnetism materials could be made by introducing V atoms in Na_0.5Bi_0.5TiO₃. This may be a new way to produce low temperature multiferroic materials.     

Magnetic properties and magnetoresistance effect of Y1-xGdxMn6Sn6 (x=0－1) compounds

The magnetic properties and magnetoresistance effect of Y_1-xGd_xMn₆Sn₆ (x=0－1) compounds have been investigated by magnetization and resistivity measurements in the applied field range (0－5 T). Compounds with x=0.4－1 display ferrimagnetic behaviours in the whole magnetic ordering temperature range, while compounds with x=0－0.2 display a field-induced metamagnetic transition, and the threshold fields decrease with increasing Gd content. The compounds with x=0.1－0.2 undergo an antiferromagnetic to ferromagnetic transition with increasing temperature. The cell-parameter a and c and cell-volume V of compounds (x=0－1) increase with increasing Gd content. It was found that the saturation magnetization M_s of the compounds (x=0.4－1) decreases, while the ordering points of the compounds (x=0－1)increase with increasing Gd content. A large MR effect was observed in the compound with x=0.2, and the maximum absolute value of MR at 5 K under 3 T is close to 19.3%.     

SIMS STUDY OF OXYGEN SPIRAL DIFFUSION C-TEXTURED Yba2Cu3O7-δ/SrTiO3 EPITAXIAL THIN FILM

Secondary ion mass spectroscopy was used to study the chemical diffusivity of 0¹⁸ in c-textured YBa₂Cu₃O_7-δ/SrTiO₃ epitaxial thin film. By fitting experimental data to the one- dimensional diffusion curve, the apparent diffusivity along the c-axis was obtained to be equal to l.02×10¹⁴cm²/sec when the temperature was 350℃. A computer analysis method was put forward to calculate the "spiral diffusion" process, and the diffusivity anisotopy of films with different mosaic size obtained. For a film of 7000×7000?² mosaic size, Dab was found to be ～3.55×10^-5xexp((-1.03 ev)/kT) cm²/sec. The calculated results reveal that the variation of the results of Dc is not the result of diffusivity anisotropy but of the difference in mosaic size.     

Rotation of ferromagnetic clusters induced magnetoresistance in the junction composed of La0.9Ca0.1MnO3 +δ and 1 wt.% Nb-doped SrTiO3

A junction composed of ultrathin La0.9Ca0.1MnO3＋δ （LCMO） film and 1 wt.% Nb-doped SrTiO3 was fabricated and its magnetoresistance （MR） was studied and compared with LCMO film. It was found that the resistance of the junction has a similar dependence on magnetic field as that of the LCMO film： the curvature of R-H curves is upward above Curie temperature （Tc） and downward below TC. These behaviours strongly suggest that the rotation of ferromagnetic clusters in manganite also causes MR in the corresponding junction. This MR can be qualitatively understood by the change of the width of the barrier induced by the rotation of ferromagnetic clusters. These results suggest a possibility to obtain junctions with large low-field MR.     

An investigation of phase separation by magnetic force microscopy in La0.45Sr0.55MnO3-δ(δ≈0.01)

We have found phase separation in La_0.45Sr_0.55MnO_3-δ (LSMO) by means of electron spin resonance, magnetic force microscopy (MFM) and magnetic measurements. Ferromagnetic and antiferromagnetic phases can coexist at low temperatures, and ferromagnetic and paramagnetic phases coexist when the temperature lies between the Néel and Curie temperatures. The size and shape of the ferromagnetic phases (the minority phases) was first observed directly from MFM images. It is suggested that the phase separation in LSMO is not the charge segregation type, but an electroneutral type due perhaps to the nonuniform distribution of oxygen vacancies.     

Simulation of near-infrared photodiode detectors based on β-FeSi2/4H-SiC heterojunction

In this paper, we propose the near-infrared p-type β-FeSi₂/n-type 4H-SiC heterojunction photodetector with semiconducting silicide (β-FeSi₂) as the active region for the first time. Optoelectronic characteristics of the photodetector are simulated using a commercial simulator at room temperature. The results show that the photodetector has a good rectifying character and a good response to the near-infrared light. Interface states should be minimized to obtain a lower reverse leakage current. The response spectrum of the β-FeSi₂/4H-SiC detector, which consists of a p-type β-FeSi₂ absorption layer with a doping concentration of 1×10¹⁵ cm^-3 and a thickness of 2.5 μm, has a peak of 755 mA/W at 1.42 μm. The illumination of the SiC side obtains a higher responsivity than that of the β-FeSi₂ side. The results illustrate that the β-FeSi₂/4H-SiC heterojunction can be used as a near-infrared photodetector compatible with near-infrared optically-activated SiC-based power switching devices.     

The effect of anti-hydrogen bond on Fermi resonance: A Raman spectroscopic study of the Fermi doublet ν1—ν12 of liquid pyridine

The effects of anti-hydrogen bond on the ν₁—ν₁₂ Fermi resonance (FR) of pyridine are experimentally investigated by using Raman scattering spectroscopy. Three systems, pyridine/water, pyridine/formamide, pyridine/carbon tetrachloride, provide varying degrees of strength for the diluent-pyridine anti-hydrogen bond complex. Water forms a stronger anti-hydrogen bond with pyridine than with formamide, and in the case of adding non-polar solvent carbon tetrachloride, which is neither a hydrogen bond donor nor an acceptor and incapable of forming hydrogen bond with pyridine, the intermolecular distance of pyridine will increase and the interaction of pyridine molecules will reduce. The dilution studies are performed on the three systems. Comparing with the values of Fermi coupling coefficient W of the ring breathing mode ν ₁ and triangle mode ν ₁₂ of pyridine at different volume concentrations, which are calculated according to the Bertran equations, in three systems, we find that the solution with the strongest anti-hydrogen bond, water, shows the fastest change in the ν₁—ν₁₂ Fermi coupling coefficient W with the volume concentration varying, followed by the formamide and carbon tetrachloride solutions. These results suggest that the stronger anti-hydrogen bond-forming effect will cause a greater reduction in the strength of the ν₁—ν₁₂ FR of pyridine. According to the mechanism of the formation of anti-hydrogen bond in the complexes and the FR theory, a qualitative explanation for the anti-hydrogen bond effect in reducing the strength of the ν₁—ν₁₂ FR of pyridine is given.     

EFFECT OF THE Ba VACANCY ON THE FLUX PINNING IN YBaxCu3O7-δ SYSTEM

A series of Y123 single phase samples with various Ba vacancy concentration was prepared by making their Ba contents deviate from the stoichiometric composition. The measurements of their structure, superconductivity and flux pinning behaviour were systematically carried out. It is found that, compared with YBa₂Cu₃O_6.96 sample, the strength of the flux pinning in YBa_xCu₃O_7-δ(1.8≤x<2.0) samples is increased, and that there is an optimum value of Ba vacancy concentration for the maximum flux pinning force density. The possible origin of the flux pinning centers to determine the flux pinning behavior at higher field is discussed in detail. We suggest that the flux pinning effect at lower field may stein from the interaction between the vortex and the surfaces of grains, and that the flux pinning mechanism at higher field belongs to the core interaction.     

INFLUENCE OF OXYGEN UPON THE SUPERCONDUCTIVITY OF THE Pb-DOPED 2223 SUPERCONDUCTOR

The influences of oxygen content (by quenching from different temperatures in air or oxygen) and its re-distribution (by annealing in nitrogen at 200℃) on T_c and room temperature resistivity were studied. It was found that T_c as a function of oxygen content or charge carrier concentration exhibits a maximum. Upon oxygen re-distribution, the room temperature resistivity would always inclose but T_c would change in a complicated way. T_c increases for the oxygen-rich state and decreases for the oxygen-deficient state Internal friction measurements showed that there are two kinds of oxygen defects in the Bi₂-O₂ layers. One is the isolated oxygen interstitials and the other is oxygen vacancies on the excess oxygen chains. It is proposed that the isolated interstitial oxygen will produce a set of impurity states near the Fermi level, and will create holes on the Cu3d-O2p band through charge transfer from the Cu3d-O2p band to the impurity states. The content of the isolated oxygen interstitial is believed to be the major factor for determining the charge carrier concentration. Variation of T_c and room temperature resistivity with oxygen re-distribution is sat-isfactorily explained as to be induced by combination of oxygen interstitials with oxygen vacancies on the excess oxygen-chains.     

Numerical study on characteristics of nitrogen discharge at high pressure with induced plasma

Based on the fluid theory of plasma, a model is built to study the characteristics of nitrogen discharge at high pressure with induced argon plasma. In the model, the spices such as electron, N₂⁺, N₄⁺, Ar⁺, and two metastable states (N₂ (A³∑_u⁺), N₂ (a¹∑_u^-)) are taken into account. The model includes particle's continuity equations, electron's energy balance equation, and Poisson equation. The model is solved with a finite difference method. The numerical results are obtained and used to investigate the effect of time taken to add nitrogen gas and initially-induced argon plasma pressure. It is found that lower speeds of adding the nitrogen gas and varying the gas pressure can induce higher plasma density, and inversely lower electron temperature. At high-pressure discharge, the electron density increases when the proportion of nitrogen component is below 40%, while the electron density will keep constant as the nitrogen component further increases. It is also shown that with the increase of initially-induced argon plasma pressure, the density of charged particles increases, and the electron temperature as well as the electric field decrease.     

Magnetic properties of TbMn6Sn6-xGax (x=0.0－1.2) compounds

Effects of Ga substitution for Sn on the structure and magnetic properties of TbMn₆Sn_6-xGa_x (x=0.0－1.2) compounds have been investigated by means of x-ray diffraction, magnetization measurement and ¹¹⁹Sn M?ssbauer spectroscopy. The substitution of Ga for Sn results in a decrease in lattice constants and unit-cell volumes. The magnetic ordering temperature decreases monotonically with increasing Ga content from 423 K for x=0.0 to 390 K for x=1.2. At room temperature, the easy magnetization direction changes from the c-axis to the ab-plane. This variation implies that the substitution of Ga for Sn leads to a decrease in the c-axis anisotropy of the Tb sublattice. An increase in the non-magnetic Ga concentration results in a monotonic decrease of the spontaneous magnetization M_s at room temperature. Since there are three non-equivalent Sn sites, 2c (0.33, 0.67,0), 2d (0.33, 0.67,0.5) and 2e (0,0,0.34) in the TbMn₆Sn_6-xGa_x compounds, the ¹¹⁹Sn M?ssbauer spectra of the TbMn₆Sn₆ and TbMn₆Sn_5.4Ga_0.6 compounds can be fitted by three sextets. The hyperfine fields (HFs) decrease in the order of HF(2d)>HF(2e)>HF(2c), which is in agreement with the magnetic structure.     

Temperature- and Frequency-Dependent Dielectric Properties of La1.5Sr0.5NiO4-δ

We report the temperature-dependent resistivity and dielectric function （1 kHz- 3 MHz） of a charge ordering system La1.5Sr0.5NiO4-δ. The primary data of ac impedance was measured by a four-terminal pair arrangement. Above 180K, the resistivity is independent of frequency. At lower temperatures, the dielectric function couM not be fitted by a Debye model with a single relaxation time, it should have a distribution. At T = 130 K, there is a sudden increase in the p - T relation, meanwhile an anomaly dielectric response occurs on the temperature dependant dielectric spectrum in the whole measured frequency range, in which the dielectric constant has a high value even at high frequency region. Our analysis suggests that the current system would be more consistent with the Zener polaron model.