硅的可见光发射—通向全硅光电子集成之途

由于Ｓｉ是一种禁带宽度只有１．１ｅＶ的间接带隙材料，其发光效率极低，因此长期以来Ｓｉ被认为是一种不可能用于制作可见光区光电器件的材料．但近一两年才出现的多孔硅光致发光现象，对人们的这种传统概念产生了巨大的冲击，一股多孔硅的研究热潮也正在兴起．本文将结合作者在多孔硅方面的工作，对多孔硅光致发光现象的研究背景、现状和潜在的应用作了较详细的介绍．     

Read—out of a read—only super—resolution optical disc with a Si mask

A novel read-only super-resolution optical disc structure (substrate/mask layer/dielectric layer) is proposed in this paper. By using a Si thin film as the mask layer, the recording pits with a diameter 380nm and a depth 50nm are read out on the dynamic measuring equipment; the laser wavelength α is 632.8nm and the numerical aperture is 0.40. In the course of reproduction, the laser power is 5mW and the rotation velocity of the disc is 4m·s^-1. The optimum thickness of the Si thin film is 18nm and the signal-to-noise ratio is 32dB.     

半导体硅原材料及辅助材料中杂质的ICP—AES测定

本文采用电感耦合等离子体发射光谱对半导体硅原材料及辅助材料中的杂质分析进行了研究。着重研究了提升量对信背比的影响和残留硅对杂质元素的干扰影响，最后采用ＩＣＰ－ＡＥＳ对化学法提纯前的原料（石英砂），拉制单晶用的辅助材料（硅粉）和拉制单晶过程中采用的石英坩埚中的杂质含量进行了分析。     

GexSi1—x／Si应变超晶格雪崩光电探测器的分析与优化设计

对ＧｅｘＳｉ１－ｘ／Ｓｉ应变超晶格雪崩光电探测器进行了分析与优化设计，优化结构为：ｉ－Ｓｉ雪崩区厚是１．８～２μｍ；ｐ－Ｓｉ区的掺杂浓度是１０＾１８ｃｍ＾－３厚为１７ｎｍ超晶格总厚为３４０ｎｍ，它可探测１．３～１．６μｍ的红外光。     

掺硅YBa2Cu3O7—δ的性质

介绍掺硅对YBCO超导态及正常态性质的影响。在所研究的掺硅浓度范围内发现电阻温度转变曲线有二次转变台阶。     

A Silicon—Based Ferroelectric Capacitor for Memory Devices

We study a silicon-based PbTiO3/Pb(Zr0.53 Ti0.47)O3/PbTiO3 capacitor,prepared by an improved sol-gel method.The ferroelectric capacitor has a high remanent polarization of 15μC/cm^2 at a coercive field of about 30kV/cm,an ultra-low leakage current density of 0.1nA/cm^2,and almost fatigue free properties.It can be used as a promising candidate for ferroelectric memory devices.     

Influence of Mass Transport on Formation of Si—Nanostructures

Nanowire-like,condyloid-like and flakes of Si-nanostructures were synthesized by thermal evaporation under different mass transport conditions by changing the ambient pressure.The structural analysis shows that a higher mass transport rate is not favourite for the formation of fine single crytalline nanowires when the substrate placed closely to the thermal vapour source,The higher mass transport rate can induce a lower Si partial pressure near the source and hence results in a lower supersaturation near the substrate.Experimental results reveal that the formation of Si-nanowires is not controlled by mass transport but by surface process.The driving force on the surface in the key factor for the formation of well-crystallized nanowires.     

钡—偶氮胂Ⅲ—锌（钴）—邻菲罗啉多元配合物显色反应的研究

在近中性环境中，研究了钡与偶氮胂Ⅲ、锌（钴）、邻菲罗啉形成多元配合物的条件及其配合物组成。显色体系的摩尔吸光系数由二元配合物的2.1×10^4L·mol^-1·cm^-1提高到7.4×10^4L·mol^-1·cm^-1。用此方法，经过简单的分离后，可作硅钡合金中钡的光度法测定。     

4—羧基杂氮硅三环中羧基红外光谱的研究

１－甲基及１－乙烯基－４－羧基杂氮硅三环在１６４５～１６３５ｃｍ＾－１均有与４－羧基相联系的弱吸收。对１－氯烷基取代物在上述范围的红外光谱研究表明，此吸收应归属于氢键存在下羧基上Ｃ＝Ｏ的伸缩振动，这种氢键形成于４－羧基与另一杂氮硅三环的桥氧之间，给杂氮硅三环化合物的质子化机理提供了直接证据。     

Role of amorphous silicon domains of Er^3＋ emission in the Er—doped hydrogenated amorphous silicon suboxide film

An investigation on the correlation between amorphous Si (a-Si) domains and Er^{3+} emission in the Er-doped hydrogenated amorphous silicon suboxide (a-Si:O:H) film is presented. On one hand, a-Si domains provide sufficient carriers for Er^{3+} carrier-mediated excitation which has been proved to be the highest excitation path for Er^{3+} ion; on the other hand, hydrogen diffusion from a-Si domains to amorphous silicon oxide (a-SiO_x) matrix during annealing has been found and this possibly decreases the number of nonradiative centres around Er^{3+} ions. This study provides a better understanding of the role of a-Si domains on Er^{3+} emission in a-Si:O:H films.     

1.55μmSi1—xGex光波导在Si1—xGex／Si多量子阱探测器集成的优…

对１。５５μｍ波长的Ｓｉ１－ｘＧｅｘ光波导和Ｓｉ１－ｘＧｅｘ／Ｓｉ多量子阱红外探测器的集成器件结构进行了系统的分析和优化设计。优化结果为：１）对Ｓｉ１－ｘＧｅｘ光波导，Ｇｅ含量ｘ＝０．０５，脊宽，高和腐蚀深度分别为８，３和２．６μｍ，２）对ＳＩ１－ｘＧｅｘ／Ｓｉ多量子阱红外探测器，Ｇｅ含量ｘ＝０．５，探测器由厚度为５５０ｎｍ，２３个周期的６ｎｍＳｉ０．５ＧＥ０．５＋１８ｎｍＳｉ组成，长度约２ｍｍ。