| A Silicon—Based Ferroelectric Capacitor for Memory Devices |
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| 引用本文： | 任天令,张林涛,等.A Silicon—Based Ferroelectric Capacitor for Memory Devices[J].中国物理快报,2002,19(3):432-433. |
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| 作者姓名： | 任天令 张林涛 |
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| 作者单位： | InstituteofMicroelectronics,TsinghuaUniversity,Beijing100084 |
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| 摘 要： | We study a silicon-based PbTiO3/Pb(Zr0.53 Ti0.47)O3/PbTiO3 capacitor,prepared by an improved sol-gel method.The ferroelectric capacitor has a high remanent polarization of 15μC/cm^2 at a coercive field of about 30kV/cm,an ultra-low leakage current density of 0.1nA/cm^2,and almost fatigue free properties.It can be used as a promising candidate for ferroelectric memory devices.
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| 关 键 词： | 存储器件 铁电电容器 硅基底 |
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