The low temperature magnetic anisotropy of the RRh2Si2 system (R: Rare earth elements)

The magnetic anisotropy of RRh₂Si₂ which has an AFI type magnetic structure can be explained well using a single R³⁺ ion Hamiltonian which includes the crystal field term and the isotropic exchange term under the two dimensional molecular field approximation, when appropriate crystal field parameters are adopted.     

Influence of Tb on easy magnetization direction and magnetostriction of ferromagnetic Laves phase GdFe_2 compounds

The crystal structure,magnetization,and spontaneous magnetostriction of ferromagnetic Laves phase Gd Fe2 compound have been investigated.High resolution synchrotron x-ray diffraction(XRD) analysis shows that Gd Fe2 has a lower cubic symmetry with easy magnetization direction(EMD) along [100] below Curie temperature TC.The replacement of Gd with a small amount of Tb changes the EMD to [111].The Curie temperature decreases while the field dependence of the saturation magnetization(Ms) measured in temperature range 5–300 K varies with increasing Tb concentration.Coercivity Hc increases with increasing Tb concentration and decays exponentially as temperature increases.The anisotropy in Gd Fe2 is so weak that some of the rare-earth substitution plays an important role in determining the easy direction of magnetization in GdFe_2.The calculated magnetostrictive constant λ100 shows a small value of 37×10~(-6).This value agrees well with experimental data 30×10~(-6).Under a relatively small magnetic field,GdFe_2 exhibits a V-shaped positive magnetostriction curve.When the field is further increased,the crystal exhibits a negative magnetostriction curve.This phenomenon has been discussed in term of magnetic domain switching.Furthermore,magnetostriction increases with increasing Tb concentration.Our work leads to a simple and unified mesoscopic explanation for magnetostriction in ferromagnets.It may also provide insight for developing novel functional materials.     

Electric-optic modulator designed by using optically active crystal

A type of electro-optic modulator is developed by using La₃Ga₅SiO₁₄ crystal which is optically active. In this modulator, π/4 prebiasing phase is offered by using the optical activity of La₃Ga₅SiO₁₄ single crystal.     

DyP5O14晶体的新相

本文首次观察到具有单斜I(P2₁/c)的DyP₅O₁₄晶体,并用光学显微镜,X射线结构分析和红外光谱等方法予以证明。DyP₅O₁₄在室温下存在着mmmF₂/m类铁弹体的单斜I结构,其铁弹相变温度为159±3℃。单斜I的DyP₅O₁₄的晶胞参数,a=8.62?,b=8.84?,c=12.82?,β=90.28°。这一发现是L _关键词：     

Magnetic properties of the hexagonal NdNi5 and NdCu5 compounds

Magnetization and resistivity measurements performed on the hexagonal NdNi₅ and NdCu₅ compounds are presented. For NdNi₅, magnetization was measured on a single crystal along the three main axes of the orthohexagonal cell. This compound orders ferromagnetically at T_c = 7 K, a being the easy magnetization axis. Quantitative analysis of the experimental data led to the determination of the 4f-Nd and 3d-Ni contributions to the magnetization. In particular crystal field parameters were determined which account for inelastic neutron scattering data. Two original features of the compounds magnetic behaviour due to crystal field effects are noted: i) in the basal plane a large anisotropy of the magnetic moment which strongly increases with the magnetic field between 11 and 130 kOe; ii) a large decrease of the Nd moment during the rotation toward the c axis driven by the field. NdCu₅ orders also ferromagnetically at 15 K. The Nd moment lies perpendicular to c, and its reduction by the crystal field seems smaller than in NdNi₅.     

Gd3+/Y3+共掺对Nd:CaF2晶体光谱性能的影响

通过坩埚下降法生长了系列共掺Nd,Gd:CaF₂和Nd,Y:CaF₂晶体, 研究了Gd³⁺/Y³⁺共掺对Nd³⁺光谱性能以及Nd:CaF₂晶体晶胞参数的影响规律. 对于0.5 at.%Nd, x at.%Gd(x=2,5,8,10):CaF₂系列晶体, 当调控Gd³⁺掺杂浓度为2 at.%时, 具有最大的荧光寿命499 μs; 当Gd³⁺掺杂浓度为5 at.%时, 具有最大的吸收截面1.47×10^-20 cm², 最大的发射截面1.9×10^-20 cm²; 当Gd³⁺掺杂浓度为8 at.%时, 具有最佳的发射带宽29.03 nm. 对于0.6 at.%Nd, xat.%Y(x=2, 5, 8, 10):CaF₂系列晶体, Y³⁺掺杂浓度为5 at.%时, 有最大的吸收截面2.41×10^-20 cm², 最大的发射截面3.17×10^-20 cm²; 当Y³⁺掺杂浓度为10 at.%时, 具有最长的荧光寿命359.4 μs,并且具有最大发射带宽26 nm.     

Er~(3+)掺杂Na_5Lu_9F_(32)单晶体的红外光学特性

采用坩埚下降法成功地生长了Er~(3+)离子掺杂的Na_5Lu_9F_(32)(NLF)单晶体。测定了单晶体在400~2 500nm波段的吸收光谱与2.5~25μm红外波段的透过光谱。Na_5Lu_9F_(32)单晶体在400~7 150 nm宽波段范围具有好的光学透过性,在该波段的透过率达到90%。在透过光谱中几乎观察不到2.7μm中红外波段的吸收,说明单晶体中OH~-离子的含量极低。根据测定的吸收光谱,通过Judd-Ofelt理论计算了Er~(3+)在单晶体中的光学强度参数Ω_t(Ω_2=2.08,Ω_4=2.07,Ω_6=0.75),以及相应的辐射跃迁速率、荧光分支比和荧光寿命。根据Futchbauer-Ladenburg公式估算了样品的发射截面大约分别为1.42×10~(-20)cm~2(~4I_(13/2)→~4I_(15/2))和1.66×10~(-20)cm~2(~4I_(11/2)→~4I_(13/2))。在980 nm半导体激光器(LD)激发下,研究了单晶体的近红外1.5μm与中红外2.7μm的发射光谱特性。     

Na_2Ge_2Se_5电子结构和光学性质的第一性原理研究

Na_2Ge_2Se_5是一种优异的红外非线性晶体材料.采用基于第一性原理的密度泛函理论赝势平面波方法对Na_2Ge_2Se_5进行结构优化,并以此为基础计算研究了Na_2Ge_2Se_5的电子结构和光学性质.结果表明:Na2Ge2Se5是宽禁带间接带隙半导体,价带至导带的电子跃迁主要来自于Ge和Se的48,4p态;Na对光学性质的贡献较小,Ge和Se之间的相互耦合作用决定了Na_2Ge_2Se_5的光学性质;该晶体在紫外区有强烈的反射和吸收,静态折射率为2.133,双折射率值适中,为0.145.理论计算结果表明,Na_2Ge_2Se_5是一种性能优良的红外非线性光学晶体材料.     

Gd3(Al,Ga)5O12:Ce闪烁晶体缺陷对其发光性能的影响

新型闪烁晶体Gd₃(Al,Ga)₅O₁₂:Ce(GAGG:Ce)在制备过程中易出现包裹体及反格位缺陷等问题,严重影响晶体的性能.为了抑制这些缺陷以得到大尺寸高质量的GAGG:Ce晶体,本文以Gd₃(Al,Ga)₅O₁₂为基质、Ce3+为掺杂离子,采用提拉法生长得到了GAGG:Ce晶体,并对不同晶体部位的物相结构、微区成分、透光性质、发光及时间性能进行了测试和对比分析.结果表明,GAGG:Ce晶体的透过谱中存在340和440 nm两处Ce³⁺特征吸收带,且位于550 nm处的直线透过率为82%.晶体尾部因杂相包裹体等宏观缺陷的影响,导致其透过率下降至70%左右.微区成分分析进一步表明GAGG:Ce晶体中存在三种类型的包裹体,分别为富Gd相、富Ce相及(Al,Ga)₂O₃相.GAGG:Ce晶体的X射线激发发射谱中在550 nm附近存在Ce³⁺宽发射带,且380 nm处还存在GdAl/Ga反格位缺陷引起的发射.晶体中存在的杂相包裹体及GdAl/Ga反格位缺陷等因素导致Ce³⁺在GAGG基质的发光强度下降12.5%;GdAl/Ga反格位离子与近邻Ce的隧穿效应使得GAGG:Ce晶体的衰减时间由117.7 ns延长至121.9 ns,且慢分量比例由16%增加至17.2%.     

Yb :YAG晶体的闪烁特性

通过不同Yb³⁺掺杂浓度(5%~30%,原子数分数)的Yb:YAG晶体的阴极射线发光谱、衰减时间、光输出及其温度依赖关系的测量,研究了Yb:YAG晶体的闪烁性能.不同Yb³⁺掺杂浓度的Yb:YAG晶体具有不同的光输出和猝灭温度,光输出随Yb³⁺掺杂浓度的增大而降低,猝灭温度则随掺杂浓度的增大而升高.室温下Yb:YAG晶体的发光衰减时间较短,均小于50ns.Yb³⁺掺杂浓度为5%的Yb:YAG晶体具有较高的光输出和较低的猝灭温度.     

Fabrication and growth rate estimation of PrBa2Cu3O7−δ single crystal by the modified top seeded crystal pulling method

Recently, we succeeded in fabricating single crystals of PrBa₂Cu₃O_7−δ by a modified top seeded crystal pulling method called the SRL-CP (Solute Rich Liquid-Crystal Pulling) method. Y₂O₃ and MgO polycrystalline crucibles and a MgO single crystal crucible were used to grow the single crystals. The crystal growth temperature was set in the range of 968°C to 972°C. The grown crystals were identified as PrBa₂Cu₃O_7−δ by X-ray diffraction. In the case of using Y₂O₃ crucibles the composition of the grown crystals was Y_xPr_1−xBa₂Cu₃O_7−δ (0.48 < x < 0.57) and in the case of using MgO crucibles a relatively small amount of Mg contamination to the grown crystals occurred at a typical concentration of approximately 1 at.% of the sum of cations. According to the crystal growth model of the SRL-CP method [1–5], a maximum growth rate of 1.7 × 10⁻⁵ cm/s was calculated with the aid of the phase diagram studies we reported earlier [6]. This value is reasonably in agreement with the experimental results.     

RAMAN STUDIES ON THE PHASE TRANSITIONS OF (NH4)2SnBr6 CRYSTALS

We report here the structural phase transitions of the crystal (NH₄)₂SnBr₆ investigated by Raman scattering at temperatures ranging from 10K to room temperature. Two phase transitions occurring at 150 and ll0K are found. Based on the group theory, it is proposed that the crystal undergoes a second-order phase transition at 150 K, resulting from a ferro-distortion with symmetry Γ⁴⁺. The change of structure is confirmed to be O⁵_h to C⁵_4h, which is assigned to the rotary of [SnBr₆]^2- ion groups around the axis of <001>. Furthermore the crystal undergoes an order-disorder phase transition at ll0K which is related with the reorientation of the ammonium ion group. It is noticed that the change of the vibrational modes at 77K does not show any phase transition.     

Auger-vacancy satellites in the decay of 82Pb (RaD)

The L-Auger spectrum of ²¹⁰Bi from RaD (²¹⁰Pb) has been studied with a resolution of 0.18% and a very thin source but with some sacrifice in statistics. A total of 65 lines or line groups have been wholly or partially identified. The L₃-MM lines, most of which result from filling L₃ vacancies created by the L₁-L₃M_{4, 5} Coster-Kronig process, are displaced an average of −36±5 eV with respect to the energies expected from the L_{1, 2}-MM spectra. This effect is the Auger analogue of the phenomenon of X-ray satellites. The L₃-M₄M₅ and L₃-M₅M₅ displacements agree within experimental error with predictions from the displacements of the strongest L₁ and L₂ X-ray satellites. We suggest the term Auger-vacancy satellites for these displaced Auger lines to distinguish them from the weak lines of the K-LL spectrum for which we suggest the term Auger Intermediate-Coupling Satellites. The ratio (L₁-M₄M₅ Auger Line)/L₁-vacancies = R = 32.5±3.5, which may have importance in determining L₁ capture as distinct from L-capture, was also measured for the first time. The end-point of the low-energy beta spectrum of ²¹⁰Pb was found to be 17.0±0.5 keV.     

Metallic Rb4C60 and Rb5C60 on the top layer of C60 single crystal

Photoemission studies reveal the existences of metallic Rb₄C₆₀ and Rb₅C₆₀ surface phases on the top layer of C₆₀ single crystal. After Rb₃C₆₀ thin film with thickness of nanometers has formed on the (1 1 1) surface layers of the C₆₀ single crystal, the excess deposition of Rb atoms do not induce the bulk-like face-centered cubic to body-centered tetragonal or body-centered cubic structure transitions at room temperature. The large size of C₆₀ molecule offers the surface vacancies for the formation of Rb₄C₆₀ and Rb₅C₆₀ monolayer that is further verified by Rb 3d core-level photoemission measurements. Valence band photoemission results exhibit the surface phases are metallic.     

通关藤晶Ⅰ的分子结构、晶体结构与绝对构型

通关藤晶Ⅰ(通关素)的分子式为C₂₁H₃₂O₅,属单斜晶系,空间群C₂²—P2₁,α=10.437?,b=12.467?,c=7.548?,β=109°57′,晶胞内分子数Z=2.用PW-1100四圆衍射仪收集强度数据,独立衍射点为1770个。以直接法测定晶Ⅰ结构。以最小二乘法修正结构参数,R=0.098。晶Ⅰ为甾醇化台物。B环与C环,C环与D环均呈顺式联结。晶Ⅰ分子间存在着 关键词：     

添加Fe(C5H5)2合成氢掺杂金刚石大单晶及其表征

在Ni₇₀Mn₂₅Co₅-C体系中添加含氢化合物Fe(C₅H₅)₂作为新型氢源, 利用温度梯度法, 在压力为5.5-6.0 GPa、温度为1280-1400 ℃的条件下, 成功合成出氢掺杂的宝石级金刚石大单晶. 通过傅里叶显微红外光谱发现, 随着Fe(C₅H₅)₂添加量的增加, 合成晶体中与氢相关的对应于sp³杂化C-H键的对称伸缩振动和反对称伸缩振动的红外特征峰2850和2920 cm^-1逐渐增强, 而晶体中氮含量却逐渐减少. 通过合成晶体的拉曼光谱分析发现, 金刚石的拉曼峰伴随Fe(C₅H₅)₂的添加向高频偏移, 这表明氢的进入在金刚石内部产生了压应力. 观察扫描电子显微镜图像发现, 在低含量Fe(C₅H₅)₂添加时晶体表面平滑, 而高含量添加时晶体表面缺陷增多, 且呈现出气孔状. 使用新的添加剂Fe(C₅H₅)₂作为氢源, 合成出含氢宝石级金刚石单晶, 丰富了金刚石单晶中对氢的研究内容, 也可为理解天然金刚石的形成机理提供帮助.     

SURFACE PHASE DECOMPOSITION IN Bi2Sr2CaCu2O7-y SINGLE CRYSTALS UNDER NITROGEN IONS IRRADIATION

The influence of irradiation by 30 keV nitrogen ions with a fluence 1×10¹⁸N⁺·cm^-2 on the crystal structure of single crystal Bi₂Sr₂CaCu₂O_7-y was investigated by means of X-ray photoelectron spectroscopy and X-ray diffraction. The irradiation caused a transformation from Bi₂Sr₂CaCu₂O_7-y (2212 phase) to Bi₂Sr₂CuO_5-x (2201 phase). It was observed that. a small amount of metallic bismuth with an average thickness of about 6.3nm appeared after the irradiation. The possible reaction mechanism under nitrogen-ion irradiation was discussed.     

稀土发光和光谱理论的研究进展

简述了近20多年以来我们在稀土发光和光谱理论方面所做的主要工作、取得的进展和成果。包括:(1)关于(4f)^N组态内单光子跃迁强度:推广Judd-Ofelt三参量公式,在其中计入"J混合"(偶宇称晶场成分造成的)导致的修正;澄清了国际上关于Judd-Ofelt全参量公式中"静力学项"和"动力学项"相对正负号的争论(仍为负号)。(2)关于(4f)^N组态内双光子过程强度:提出直接计算强度方法(放弃缔合近似,利用Ce³⁺的5d和左邻RE³⁺的(4f)^N能级-波函资料,近似模拟出最重要的虚中间组态(4f)^N-15d的能级-波函结构)来讨论和改进Judd-Ofelt缔合近似。(3)固体中声子辅助的稀土离子间能量传输理论:发现HLO理论关于单声子过程中的"干涉相消"实际只适合于对角过程,而非对角过程则是"干涉相加",因而,后者首要的是单声子而非双声子过程;同时,用"晶体格波模"取代"Debye模"描述能量传输中的声子,给出了新模型下计算对角和非对角过程速率等物理量的整套公式。并由之看出:波矢q=0和对应色散曲线扁平段的光学声子对单声子非对角过程速率有完全不能忽略的贡献,这些都不同于或超出于HLO理论。(4)提出和发展了分析指认4f-5d跃迁光谱的简单理论模型,用能量和跃迁强度同时进行近似拟合,成功地分析指认了从(4f)³到(4f)¹³离子在几种基质中的4f→5d吸收(激发)谱,也成功用于若干5d→4f辐射谱。(5)对跃迁的初末晶场态同时引用有效自旋哈密顿描述稀土离子间超交换作用,成功地解释了低温10 K时立方结构的纯稀土冰晶石晶体Cs₂NaLnCl₆(Ln=Er,Yb)等的吸收谱中0声子线(量级为几个cm^-1)的精细分裂。     

Bi2Pb2V2O10的晶体结构

使用X射线单晶衍射法测定了Bi₂Pb₂V₂O₁₀的结构。该晶体属三斜晶系,空间群为C₁¹-P1,单位晶胞内化学式数Z=1,晶胞参数为:a=7.084(4)?,b=7.278(3)?,c=5.587(3)?,α=111.91(5)°,β=95.01(6)°,γ=108.86(4)°,V=245.70?³,D_x=7.35g/cm³,μ(MoK_α)=678,94cm^-1,F(000)=456。用Patterson函数分析及Forier技术测定了结构,对原子坐标、各向同性及各向异性热参数进行了最小二乘方修正,R=0.079。结构分析表明,Bi₂Pb₂V₂O₁₀的Pb原子与O原子形成八角十二面体,Bi原子与O原子形成六角多面体。两个共棱的Pb—O多面体与两个共棱的Bi—O多面体相连,并沿bc平面无限延伸。讨论了吸收的影响。最后,将Bi₂Pb₂VO₁₀的结构与Pb₂SO₅的结构进行了比较。 关键词：     

准一维Cr基超导体RbCr3As3的超导能隙

RbCr₃As₃是具有[（Cr₃As₃）^-]_∞线性链的准一维超导体,超导转变温度约为6.6 K.对RbCr₃As₃单晶进行了电输运和极低温热输运性质的研究.低温下,拟合了RbCr₃As₃正常态电阻率随温度的变化,发现其满足费米液体行为.通过拟合超导转变温度随磁场的关系,得到RbCr₃As₃单晶的上临界场约为25.6 T.对RbCr₃As₃进行了零场下的极低温热导率测量,得到其剩余线性项为7.5 μW·K^-2·cm^-1,占正常态热导率值的24%.测量不同磁场下RbCr₃As₃的热导率,发现与单带s波超导体相比较,RbCr₃As₃剩余线性项随磁场增加相对较快.这些结果表明RbCr₃As₃单晶很可能是有节点的非常规超导体.