高密度外延电阻淬灭硅光电倍增器研究

针对表面淬灭电阻技术引起死区面积较大,以及高光子探测效率与大动态范围不能同时满足的矛盾,应用外延电阻淬灭技术,采用与雪崩光电二极管微单元相连的衬底外延层硅材料制作了淬灭电阻.研制成功的外延电阻淬灭硅光电倍增器的有源区面积为1×1mm~2,微单元尺寸为7μm,微单元密度高达21 488个/mm~2,测试结果表明:漏电流为10量级,反向击穿电压为24.5V,过偏压为2.5V时,增益达1.4×10~5,室温下暗计数率约为600kHz/mm~2,串话率低于10%,说明该器件具有良好的光子计数特性.该高密度硅光电倍增器测量的动态范围是1.8×10~4个/mm,光子探测效率为16%(@λ_(peak)=480nm),恢复时间为8.5ns,单光子分辨能力较高,并且在液氮温度环境能够探测光子,这对于拓展硅光电倍增器在极低温度条件下的应用,比如暗物质测量实验方面具有潜力.     

The 1/f noise in multiwalled carbon nanotubes

The $1/f$ noise in multiwalled carbon nanotubes bundles has been investigated between the frequency range of 0.1 to 30 Hz. At room temperature the noise spectrum is standard 1/f, and its level is proportional to the square of the bias voltage. With decreasing temperature the noise level also decreases. At 4.2 K the noise level follows a non-monotonic dependence against the bias voltage, showing a peak at a certain bias voltage, meanwhile its frequency dependence also deviates from the 1/f trend. This anomalous behaviour is discussed within the picture of environmental quantum fluctuation of charge transport in the samples.     

极紫外波段微通道板光子计数探测器

研究了一种极紫外波段微通道板（MCP）光子计数探测器,用于探测地球等离子体层中极微弱的30.4 nm辐射。通过改变电压、温度等参数对比了该微通道板光子计数探测器的暗噪声和分辨率的变化。结果表明：微通道板探测器的暗噪声主要来源于残余气体离子反馈和热噪声,因此要降低探测器暗噪声,应对微通道进行彻底的预处理除气,并尽量避免探测器在高温状态下工作,常温下经过预处理的微通道板光子探测系统的暗计数率仅为0.34 count/（s.cm2）。系统的分辨率主要受电压和计数率的影响,受温度影响不明显。由于不同的微通道板有不同的耐压范围,过小或过大的电压或计数率都会造成系统分辨率的降低。     

An atmospheric-pressure nitrogen-plasma jet produced from microdischarges in a porous dielectric

This report presents an atmospheric-pressure nitrogen-plasma jet generated from microdischarges in a porous dielectric. A plasma jet with a length of 42 mm was produced by feeding nitrogen gas through a porous alumina installed between an outer electrode and a hollow inner electrode and by applying 60 Hz sinusoidal voltage wave to the electrodes. Microdischarges in the porous alumina are ejected as a plasma jet from the outer electrode through a 1 mm hole by increasing the applied voltage, showing that the temperature of the jet decreases to a value close to room temperature. Even at a frequency as low as 60 Hz, the plasma that evolves from a large amount of microdischarge inside a porous dielectric can have characteristics that are similar to those generated at several hundreds of kilohertz. From the electrical measurements, it is expected that not only the steady generation but also the frequency of the pulses resulting from the microdischarges in the porous dielectric play an important role in obtaining a stable plasma jet. We also identified the various excited plasma species produced from the plasma jet by an optical emission spectroscopy.     

液氮温区下应变式位移传感系统测量性能的研究

文中研究了一种应变式位移传感系统在室温和液氮温度下的静态传输特性。实验结果表明,该系统在液氮温区下具有良好的输出特性,系统非线性度低于1%,滞环率低于5%,其灵敏系数与温度相关,293K和77K温度下的灵敏系数分别为-0.3654mV/V/mm和-0.3886mV/V/mm。实验结果为该位移传感系统在低温环境中的应用提供了一定基础。     

Thermal experiment of silicon PIN detector

The experiment of this paper is the thermal test of the leakage current of silicon PIN detector.Raising temperature may cause the detector to increase leakage current,decrease depletion and increase noise.Three samples are used in the experiment.One (called △E) is the sample of 100 tan in thickness.The other two (called E1 and E2) are stacks of five detectors of 1000 μm in thickness.All of them are 12 mm in diameter.The experiment has been done for 21 hours and with power on continuously.The samples have undergone more than 60 ℃ for about one hour.They are not degenerated when back to the room temperature.The depletion rate is temperature and bias voltage related.With the circuit of the experiment and temperature at 35 ℃,△E is still depleted while E1 and E2 are 94.9% and 99.7% depleted respectively.The noises of the samples can be derived from the values at room temperature and the thermal dependence of the leakage currents.With the addition of the noise of the pre-amplifier,the noises of E1,E2 and AE at 24 ℃ are 16.4,16.3,and 10.5 keV (FWHM) respectively while at 35 ℃ are about 33.6,33.1,and 20.6 keV (FWHM) respectively.     

液氮环境下的热载流子高功率微波探测器

为提高热载流子高功率微波探测器的灵敏度和降低环境温度对探测器性能的影响,开展了液氮环境下的热载流子探测器研究。提出了局部使用可阀合金块的BJ-100型热载流子探测器制作工艺,增强了探测器的抗温度冲击能力。测试结果表明,探测器硅片焊接的结合力大于4.9 N,能够承受从常温到液氮的反复温度冲击。利用100 kW微波源开展了热载流子探测器在室温和液氮环境下的灵敏度测试实验,结果表明:探测器输出波形与肖特基二极管检波器输出波形一致;在保持偏置电流相同的条件下,相较于常温环境,探测器在液氮环境下的相对灵敏度提升约20倍,输出电压可达V级。     

室温条件下脉冲CO激光辐射特性

CO气体分子发射激光需要在低温(液氮温度附近)时才容易实现。为在常温条件下实现CO的激光输出,采用横向激励大气压(TEA)脉冲放电的方式对CO气体分子在室温条件下的红外发光辐射性能进行了实验研究。在实验所限定的参数条件下,没有获得FO波段激光辐射,仅实现了FB波段的激光输出。典型的指标为:电光转换效率1%,中心波长5.3μm,辐射能量0.22 J,辐射脉宽(FWHM)700 ns,相当于辐射的峰值功率达到0.3 mW左右;当以500 Hz放电脉冲重复频率运转时,常温条件下还获得了大于百瓦量级的高平均功率辐射输出。     

低温Yb:YAG放大器增益与热畸变特性实验研究

为了研究低温条件下Yb:YAG放大器的增益和热特性,搭建了一套液氮冷却的低温放大器,开展了实验研究。测量了不同泵浦强度下的小信号增益以及低温和常温下的介质热致波前畸变。结果表明:低温条件下,可以用更少的泵浦能量得到高于常温的增益;常温下泵浦电流200A、脉冲宽度1200μs的小信号增益为1.59;低温下泵浦电流200A、脉冲宽度400μs的小信号增益为1.82,光光效率显著提高。自发辐射放大(ASE)问题在低温下更加显著,采用短脉冲泵浦有利于降低ASE的影响。低温的热管理效果较常温有显著提高,可以在更高的平均功率下运行。     

低温LBJT性能表征

作为集成电路的重要组成器件,双极结型晶体管在高速高频等方面有着互补金属氧化物半导体不能替代的优点.由于常规双极结型晶体管在低温环境中增益骤降,器件性能大幅衰减,故双极结型晶体管低温性能的研究较少且仅限于77K以上的温度.本文对在绝缘体上硅衬底上制造的与CMOS工艺相兼容的对称水平双极结型晶体管进行了4.2～300K宽温...     

94K低温下和室温下GaN基MSM紫外光探测器性能的比较

在采用MOCVD技术生长的GaN膜上制备出MSM紫外光探测器，分别在室温下和94K低温下，测量了探测器对不同光波长的响应、同一光波长下对不同偏压的响应、不同斩波频率下的响应。结果表明，在94K下响应有了很大的改善。当光波长从360nm增加到450nm时，响应下降了3个数量级，而常温下只下降两个数量级，但探测器的时间响应常数变长了。     

ROOM TEMPERATURE LIGHT-THERMO-DETECTOR MADE OF HIGH-Tc SUPERCONDUCTOR

Based on the anisotropic Seebeck tensor coefficients, a light-thermo-radiation detector made of high-T_c superconductor (YBa₂Cu₃O_7-δ) was fabricated, which can function at room temperature. The induced voltaic signals at various modulation frequencies for radiation from He-Ne laser and from a 500 K black body were measured. The noise ratio for detecting He-Ne laser radiation and the D^* for black body were evaluated. Compared with bolometer made of high-T_c superconductor which functions at liquid nitrogen, and with pyroelectric detector, it was found that the advantages of this new device are that the device can work at room temperature with very low noise and very fast response. Although having a lower D^* value than that of bolometer for the present device construction, we point out the possibility and the direction for improving the D^* value, hence the promising prospect of this kind of device.     

The effect of potential of impedance in the pulsed-laser-deposited SrBi2Ta2O9 thin film

Ferroelectrics SrBi₂Ta₂O₉ (SBTO) thin films were grown on a highly oriented Pt/Ti/SiO₂/Si substrates using the pulsed laser ablation. The ac impedance of SBTO thin films have been measured at room temperature both in the frequency range from 10⁻¹ to 10⁶ Hz and bias voltage range from −6 to 6 V. The ac impedance dispersion was observed at low frequency with increasing bias voltage, which was interpreted based on a blocked charge. We can explain that the blocking interface gives rise to constant phase element (CPE) response, and we give an impedance model function that can fit data along the low frequency range when such a CPE is found. The low frequency dispersion phenomena of SBTO thin film are related to a charge diffusion process at the surface of thin film.     

Optical properties of doubly doped ZnO phosphors co-activated with lithium ions

Time-resolved laser-induced optical properties of didymium (a mixture of neodymium and praseodymium) doped zinc oxide phosphors have been studied using nitrogen laser as an excitation source at room as well as at liquid nitrogen temperatures. A comparison of optical properties (oscillator strength and dipole-moment) at room temperature and liquid nitrogen temperature has been done and is reported in this article. It is found that oscillator strength and dipole-moment values for doped ZnO are increasing with decreasing temperature. The increasing trend of the optical parameters obtained at liquid nitrogen temperature of the doped phosphors indicates increase in efficiency.     

Luminescence mechanism and energy level structure of Eu-doped GaN powders investigated by cathodoluminescence spectroscopy

1.5at% Eu-doped GaN powders were prepared by a co-precipitation method.Powder X-ray diffraction(XRD)results shows that there is only the wurtzite phase.Cathodoluminescence spectra were measured at room temperature and liquid nitrogen temperature,respectively.The band-to-band luminescence of GaN was shifted from 373 nm to 368 nm with the temperature decreasing from room temperature to liquid nitrogen temperature.The luminescence peaks at 537,557,579,590,597,614,653 and 701 nm are attributed to the Eu ions related transitions in the host of GaN powders and the peak positions were not influenced by the variation of temperature.With the increase of accelerating voltage,the intensity of all luminescence peaks was increased.The strongest luminescence peak at 614 nm shows non-symmetrical shape and is composed of 612,615 and 621 nm through Lorentzian fitting,which indicates there are oxygen and nitrogen environments of the Eu3+ions in the Eu-doped GaN powders.     

一种聚噻吩(Pt)衍生物在液氮条件下的电致发光性能

成功地试制了用一种聚噻吩（Pt)衍生物作发光活性物质的发光二极管,报导了该元件在液氮（－200℃）中的电致发光特性。     

Channeling study of boron implanted silicon: Liquid nitrogen temperature implantation

Silicon samples have been boron implanted at 150 keV at liquid nitrogen temperature to a dose of 3.6 × 10¹⁵/cm². This dose rendered the implanted layer amorphous as viewed by helium ion backscattering. Four kinds of room temperature measurements were made on the same set of samples as a function of the isochronal annealing temperature. The measurements made were the determination of the substitutional boron content by the channeling technique using the B¹¹(p, α) nuclear reaction, observation of the disorder by helium ion backscattering, determination of the carrier concentration by van der Pauw Hall measurements, and the sheet resistivity by four point probe measurements. These measurements are compared with results from samples implanted at room temperature. The carrier concentration correlates well with the substitutional boron content for both room temperature and liquid nitrogen temperature implantations. Following annealing temperatures in the 600 to 800°C range, a much larger percentage of the boron lies on substitutional lattice sites, and therefore the carrier concentration is larger, if the implantation is done at liquid nitrogen temperature rather than at room temperature. Following liquid nitrogen temperature implantation, reverse annealing is observed from 600 to 800°C in the substitutional boron content, carrier concentration and sheet resistivity. The boron is more than 90 per cent substitutional after annealing to 1100°C for both the room temperature and liquid nitrogen temperature implantations. The low temperature implantation produced a buried amorphous layer, and this layer was observed to regrow from both the surface and substrate sides at approximately equal rates.     

Mechanically alloyed Al-I composite materials

Mechanically alloyed aluminum-iodine composites with iodine concentrations from 4 to 17 wt% were prepared from elemental aluminum and iodine. A reference sample was prepared from aluminum and AlI₃. A shaker mill and an attritor mill, operating at both room temperature and liquid nitrogen temperature, were used for preparation. Materials were characterized by electron microscopy and X-ray diffraction. The iodine release upon heating was studied using thermogravimetry. Mechanical alloying was found to be effective for preparation of Al-I composites that do not release iodine until the material is brought to high temperatures. Mechanical alloying in nitrogen gas at liquid nitrogen temperature was more effective in preparing stabilized Al-I composites than milling at room temperature. Iodine was not retained in materials milled directly in liquid nitrogen. In addition to poorly crystalline AlI₃, other iodine compounds were present in the products. Assuming that the products are similar to other mechanically alloyed materials, it is expected that iodine is mixed with aluminum on the atomic scale, forming metastable Al-I compounds where iodine may be bonded to aluminum more strongly than in AlI₃, explaining why their thermal decomposition and respective iodine release occur at higher temperatures compared to decomposition and boiling of AlI₃.     

温度对聚酰亚胺直流击穿特性与闪络特性影响的研究

随着超导技术的迅速发展,高温超导电力设备的工作温度已经可以控制在液氮温度附近,绝缘材料的电气特性是影响电力设备工作性能和运行可靠性的重要因素。聚酰亚胺由于其优异的电气性能和力学性能,广泛应用于常温下电力设备绝缘,而其作为低温绝缘材料应用的研究目前鲜有报道。因此,在液氮温度下聚酰亚胺的绝缘性能研究具有十分重要的意义。文中选取室温附近(300K)和液氮温度(78K)两个温度点,对聚酰亚胺的直流击穿性能和沿面闪络特性进行了测试。研究结果表明温度对聚酰亚胺绝缘材料的直流击穿场强和沿面闪络强度均有一定影响。     

利用温变电容特性测量发光二极管结温的研究

结区的温度, 简称结温, 是发光二极管(LED) 的重要参数之一, 它对LED 器件的出光效率、光色、器件可靠性和寿命均有很大影响, 准确测量LED 器件的结温对制备LED 芯片、器件封装和应用有着重要的意义. 本文利用反向偏压下的LED的势垒电容随温度变化的特性, 提出了一种LED结温测量的新方法. 论文首先测量和分析了LED在室温下反向偏压时的电容-电压(C-V)曲线和不同反向偏压下的电容-温度(C-T)曲线, 结果表明, 在合适的偏压下, LED的电容随温度的增大而显著增加, 并呈现良好的线性关系. 在LED工作中监测其电容的变化, 并与C-T曲线进行对比, 实现了LED结温的测量, 其测量结果和传统的正向电压法的结果相对比, 两者符合较好. 最后, 利用上述方法测量了LED 在恒流和恒压条件下的结温的实时变化过程. 较传统的结温测量方法, 本方法的优点在于只须要一次定标测量, 且可实现LED在任意电压和电流下的结温测量.