利用牛血清蛋白合成CdS纳米棒和网状纳米线

采用简单易控、对环境友好的矿化方法, 利用牛血清蛋白(BSA)做模板, 通过Cd2+与硫代乙酰胺(TAA)反应制备了形貌均一的CdS纳米棒和网状纳米线. 分别采用透射电子显微镜(TEM)、X射线能谱(EDS)、X射线衍射(XRD)、荧光(PL)发射谱和导电原子力显微镜(C-AFM)等方法对不同实验温度下制备的CdS样品的结构形貌、成分组成和光学性质及微区电子传输行为进行了表征. 结果表明: 在实验反应温度为20 ℃时, 得到的产物为单分散性好的CdS 纳米棒, 长度为250 nm, 直径为30 nm; 在50 ℃时, 得到网状CdS纳米线, 其长度为2-3 μm; CdS纳米棒和网状纳米线均为立方相闪锌矿结构. 荧光性质的测试表明, CdS纳米棒和网状纳米线具有优良的荧光性能, 电流-电压(I-V)特性的表征表明CdS纳米线具有很好的电导特性.     

溶剂热法合成CdS纳米晶及其光学性质研究

以硫脲和醋酸镉为原料,采用溶剂热法在不同的反应介质和温度下合成了CdS纳米晶,比较了单胺与双胺对合成CdS纳米晶形貌的影响。采用透射电镜(TEM)、X射线粉末衍射仪(XRD)和荧光分光光度计(PL)对合成的CdS纳米晶结构和光学性能进行表征。结果表明:反应温度和反应介质对其形貌有影响,在双胺的条件下,60℃时合成了纯相的六方相CdS纳米棒;双胺条件下更易生成纳米棒,且高温下晶体的结晶性更好。PL分析表明,水(溶剂)热法制备的CdS的荧光光谱图与大多数CdS类似,均在440~480 nm和550 nm处存在发射峰,但较宽的发射峰蓝移说明材料的光学性质受到材料形貌和制备方法的影响。     

Use of ionic liquids in the synthesis of nanocrystals and nanorods of semiconducting metal chalcogenides

We have synthesized nanoparticles of hexagonal CdS in the diameter range 3-13 nm by the reaction of cadmium acetate dihydrate with thioacetamide in imidazolium [BMIM]-based ionic liquids. We have obtained three different particle sizes of CdS by changing the anion of the ionic liquid. Addition of trioctylphosphine oxide (TOPO) to the reaction mixture causes greater monodispersity as well as smaller particle size, while addition of ethylenediamine produces nanorods of 7 nm average diameter. Hexagonal ZnS and cubic PbS nanoparticles with average diameters of 3 and 10 nm, respectively, have been prepared by the reaction of the metal acetates with thioacetamide in [BMIM][BF4]. Hexagonal CdSe nanoparticles with an average diameter 12 nm were obtained by the reaction of cadmium acetate dihydrate with dimethylselenourea in [BMIM][BF4]. In this case also we observe the same effect of the addition of TOPO as in the case of CdS. Addition of ethylenediamine to the reaction mixture gives rise to nanorods. ZnSe nanowires with a cubic structures, possible diameters in the range 70-100 nm by the reaction of zinc acetate dihydrate with dimethylselenourea in [BMIM][MeSO4]. The nanostructures obtained are single crystalline in all the cases. Most of the nanostructures show characteristic UV/Vis absorption and photoluminescence emission spectra. The thermodynamically most stable structures are generally produced in the synthesis carried out in ionic liquids.     

Growth and optical properties of wurtzite-type CdS nanocrystals

This paper reports wurtzite-type CdS nanostructures synthesized via a hydrothermal reaction route using dithiol glycol as the sulfur source. The reaction time was found to play an important role in the shape of the CdS nanocrystals: from dots to wires via an oriented attachment mechanism. This work has enabled us to generate nanostructures with controllable geometric shapes and structures and thus optical properties. The CdS nanostructures show a hexagonal wurtzite phase confirmed by X-ray diffraction and show no evidence for a mixed phase of cubic symmetry. The Raman peak position of the characteristic first-order longitudinal optical phonon mode does not change greatly, and the corresponding full width at half-maximum is found to decrease with the CdS shape, changing from nanoparticles to nanowires because of crystalline quality improvement. The photoluminescence measurements indicate tunable optical properties just through a change in the shape of the CdS nanocrystals; i.e., CdS nanoparticles show a band-edge emission at approximately 426 nm in wavelength, while the CdS nanowires show a band-edge emission at approximately 426 nm as well as a weaker trap-state green emission at approximately 530 nm in wavelength. These samples provide an opportunity for the study of the evolution of crystal growth and optical properties, with the shape of the nanocrystals varying from nearly spherical particles to wires.     

表面活性剂辅助合成CdWO4纳米棒和纳米线

以Na₂WO₄•2H₂O和CdCl₂ 为主要原料, 分别在十六烷基三甲基溴化铵(CTAB)和十二烷基苯磺酸钠(SDBS)表面活性剂中, 在180 ℃反应16 h, 水热制备了CdWO₄纳米棒和纳米线. 利用X射线粉末衍射(XRD)、透射电子显微镜(TEM)和高分辨透射电子显微镜(HRTEM)等手段对产物进行了表征, 并对其在室温下的发光特性进行了测定. 实验结果表明: 产物均为具有单斜结构的单相CdWO₄. 其中CdWO₄纳米棒具有单晶属性, 平均粒径约为63 nm, 长度近1 µm; 而CdWO₄纳米线具有多晶特性, 平均粒径约为12 nm, 长度达十几微米. 当激发波长为253 nm时均有460 nm强的发射峰, 其中CdWO₄单晶纳米棒的发光强度大于CdWO₄多晶纳米线. 分别对CdWO₄纳米棒和纳米线形成的可能机理进行了初步分析.     

Enhanced ultraviolet emission from ZnS-coated ZnO nanowires fabricated by self-assembling method

A simple chemical route for ZnS-coated ZnO nanowires with preferential (002) orientation is reported. Sodium sulfide and zinc nitrate were employed to supply S and Zn atoms at 60 degrees C to form ZnS-coated ZnO nanowires structures. Electron diffraction measurement shows that the ZnO/ZnS core-shell nanostructure is single crystalline. Interesting features are found in the photoluminescence (PL) spectra of ZnS-coated ZnO nanostructures. After coating, the UV emission of nanorods is dramatically enhanced at the expense of the green emission. The core/shell structure with higher band gap shell material and reduced surface states should be responsible for this PL enhancement.     

均匀沉淀法制备氧化锌纳米棒

采用均匀沉淀法制备了氧化锌纳米棒,用XRD,TEM,PL等检测手段对样品进行了表征.结果表明:所得样品为长约100 nm,宽约30 nm的纤锌矿结构氧化锌纳米棒,颗粒分布均匀.其在可见光区比紫外区的荧光发射显著增强.     

片状碘化铋辅助液相法合成硫化镉纳米线的取向行为和场发射特性

利用低温液相法可控合成有序硫化镉纳米结构. 用片状碘化铋作为可分解的二维模板实现硫化镉纳米线的生长调控. 采用不同尺寸的片状碘化铋并控制反应温度, 成功制备出硫化镉纳米线的平面方形网状结构、无序交织网状结构和有序阵列结构. 电子显微分析、X射线衍射和光致发光分析显示, 这些纳米结构晶化程度良好. 场发射测试表明, 硫化镉纳米线由横向排列向竖直排列的可控变化使得硫化镉纳米线平面方形网状结构、无序交织网状结构和有序阵列结构的场发射性能依次增强.     

Sol-gel template synthesis and photoluminescence of n- and p-type semiconductor oxide nanowires.

A sol-gel template technique has been put forward to synthesize single-crystalline semiconductor oxide nanowires, such as n-type SnO2 and p-type NiO. Scanning electron microscopy and transmission electron microscopy observations show that the oxide nanowires are single-crystal with average diameters in the range of 100-300 nm and lengths of over 10 microm. Photoluminescence (PL) spectra show a PL emission peak at 401 nm for n-type semiconductor SnO2, and a PL emission at 407 nm for p-type semiconductor NiO nanowires, respectively. Correspondingly, the observed violet-light emission at room temperature is attributed to near-band-edge emission for SnO2 nanowires and the 3d(7)4s-->3d8 transition of Ni2+ for NiO nanowires.     

Luminescence Property and Synthesis of Sulfur-doped ZnO Nanowires by Electrochemical Deposition

"Sulfur-doped zinc oxide (ZnO) nanowires were successfully synthesized by an electric field-assisted electrochemical deposition in porous anodized aluminum oxide template at room temperature. The structure, morphology, chemical composition and photoluminescence properties of the as-synthesized ZnO:S nanostructures were investigated. X-ray diffraction and the selected area electron diffraction results reveal that the as-ynthesized products are single phase with hexagonal wurtzite structure with a highly preferential orientation in the (101) direction. Transmission electron microscopy observations indicate that the nanowires are niform with an average diameter of 70 nm and length up to several tens of micrometers. X-ray photoelectron pectroscopy further reveals the presence of S in the ZnO nanowires. Room-temperature photoluminescences observed in the sulfur-doped ZnO nanowires which exhibits strong near-band-edge ultraviolet peaks at 378 and 392 nm and weak green emissions at 533 and 507 nm. A blue emission at 456 nm and violet emissions at around 406, 420, and 434 nm were also observed in the PL spectrum for the as-synthesized ZnO:S nanowires. The PL spectrum shows that S-doping had an obvious effect on the luminescence property of typical ZnO nanowires."     

Electron microscopy study of exotic nanostructures of cadmium sulfide.

In this article, two simple methods, evaporation-condensation and catalytic thermal evaporation, were used to investigate the synthesis of CdS nanostructures for nanoscale optoelectronic applications. To understand their growth mechanisms, various electron microscopy and microanalysis techniques were utilized in characterizing their morphologies, internal structures, growth directions and elemental compositions. The electron microscopy study reveals that when using the evaporation-condensation method, branched CdS nanorods and self-assembled arrays of CdS nanorods were synthesized at 800 degrees C and 1000 degrees C, respectively. Instead of morphological differences, both types of CdS nanorods grew along the [0001] direction. However, when using the catalytic thermal evaporation method (Au as the catalyst), patterned CdS nanowires and nanobelts were formed at the temperature region of 500-600 degrees C and 600-750 degrees C, respectively. Their growth direction was along the direction [1010] instead of [0001]. Based on the microscopy and microanalysis results, we propose some growth mechanisms in relation to the growth processes of those exotic CdS nanostructures.     

Defect-pit-assisted growth of GaN nanostructures: nanowires, nanorods and nanobelts

A new method using defect-pit-assisted growth technology to successfully synthesize the high-quality single crystalline GaN nanostructures by ammoniating Ga(2)O(3) films was proposed in this paper. During the ammoniating process, the amorphous middle buffer layer may unavoidably produce some defects and dislocations. Some defect pits come out, which have the lowest surface energy and can subsequently be used as a mask/template or act as potential nucleation sites to fabricate the GaN actinomorphic nanostructures. The as-prepared products are characterized by X-ray diffraction (XRD), Fourier transform infrared spectroscopy (FTIR), scanning electron microscopy (SEM) and high-resolution transmission electron microscopy (HRTEM). The results indicate that all the reflections of the samples can be indexed to the hexagonal GaN phase and the clear lattice fringes in HRTEM further confirm the growth of high-quality single-crystal GaN nanostructures. The SEM images show that the nanostructures have been realized under different experimental conditions exhibiting different shapes: nanowires, nanorods, and nanobelts. No particles or other nanostructures are found in the SEM study, demonstrating that the product possesses pure nanostructures. These nanostructures show a very good emission peak at 366 nm, which will have a good advantage for applications in laser devices using one-dimensional structures. Finally, the growth mechanism is also briefly discussed.     

Synthesis of variable-aspect-ratio, single-crystalline ZnO nanostructures

Variable-aspect-ratio (length/diameter), one-dimensional (1-D) ZnO nanostructures (nanorods and nanowires) were prepared in alcohol/water solution by reacting a Zn2+ precursor with an organic weak base, tetramethylammonium hydroxide (Me4NOH). The effect of the experimental parameters (temperature, base concentration, reaction time, and water content) on nucleation, growth, and the final morphology of the ZnO nanostructures was investigated. The low-temperature syntheses (75-150 degrees C) yielded aspect ratios of the 1-D ZnO nanostructures that depended on the water content. The individual ZnO nanorods and nanowires were determined to be perfect, single crystals with their c axes as the primary growth direction.     

Controlled solvothermal synthesis of PbS quasi-nanorods by calix[4]arene

A new idea of the nanorods preparation and a novel application of calixarenes are presented. Calix[4]arene was introduced into solvothermal system to produce one-dimensional inorganic nanomaterial. The obtained product was characterized by XRD and TEM. Results of the XRD analysis showed that the product was pure cubic phase of PbS with high crystallinity. TEM images revealed that the diameter and length of the PbS nanorods were about 200 nm and up to 3.5 μm, respectively. Optical properties of the product were also studied. PL emission image showed that the product exhibited an emission peak at 308 nm in ultraviolet region showing a blue shift of 14 nm compared to the bulk material. The formation mechanism of PbS nanorods in the presence of calix[4]arene is discussed.     

Selected-control synthesis of ZnO nanowires and nanorods via a PEG-assisted route

Long-chain polymer-assisted growth of one-dimensional (1D) nanostructures has been investigated in previous research. This kind mild method has lots of merits such as not requiring complex procedures, without template supporting etc. Can the short-chain polymer also be used to grow long nanowires? In the present work, a short-chain polymer (PEG400) was found to promote the formation of 1D ZnO nanostructures, which cannot be obtained by long-chain polymers (such as PEG10000). Moreover, nanowires and nanorods can be selectively synthesized by using short-chain polymers. The influence factors for the formation of 1D ZnO nanostructures were also investigated in detail. The XRD, Raman spectrum, XPS, SEM, TEM, ED, HRTEM, EDXA, and PL spectra have been provided for the characterization of the as-obtained nanowires and nanorods.     

Synthesis of uniform CdS nanowires in high yield and its single nanowire electrical property

Large-scale high quality CdS nanowires with uniform diameter were synthesized by using a rapid and simple solvothermal route. Field emission scan electron microscopy (FESEM) and transmission electron microscopy (TEM) images show that the CdS nanowires have diameter of about 26 nm and length up to several micrometres. High resolution TEM (HRTEM) study indicates the single-crystalline nature of CdS nanowires with an oriented growth along the c-axis direction. The optical properties of the products were characterized by UV-vis absorption spectra, photoluminescence spectra and Raman spectra. The resistivity, electron concentration and electron mobility of single NW are calculated by fitting the symmetric I-V curves measured on single NW by the metal-semiconductor-metal model based on thermionic field emission theory.     

片状碘化铋铺助液相法合成硫化镉纳米线的取向行为和场发射特性

利用低温液相法可控合成有序硫化镉纳米结构.用片状碘化铋作为可分解的二维模板实现硫化镉纳米线的生长调控.采用不同尺寸的片状碘化铋并控制反应温度,成功制备出硫化镉纳米线的平面方形网状结构、无序交织网状结构和有序阵列结构.电子显微分析、X射线衍射和光致发光分析显示,这些纳米结构晶化程度良好.场发射测试表明,硫化镉纳米线由横向排列向竖直排列的可控变化使得硫化镉纳米线平面方形网状结构、无序交织网状结构和有序阵列结构的场发射性能依次增强.     

Liquid-crystalline polymer composites with CdS nanorods: structure and optical properties

We report on the structure, uniaxial orientation, and photoluminescent properties of CdS nanorods that form stable nanocomposites with smectic C hydrogen-bonded polymers from the family of poly(4-(n-acryloyloxyalkoxy)benzoic acids. TEM analysis of microtomed films of nanocomposites reveals that CdS nanorods form small domains that are homogeneously distributed in the LC polymer matrix. They undergo long-range orientation with the formation of one-dimensional aggregates of rods when the composite films are uniaxially deformed. The Stokes photoluminescence was observed from CdS NRs/LC polymer composites with emission peak located almost at the same wavelength as that of NRs solution in heptane. An anti-Stokes photoluminescence (ASPL) in polymer nanocomposites was found under the excitation below the nanoparticles ground state. The mechanism of ASPL was interpreted in terms of thermally populated states that are involved in the excitation process. These nanocomposites represent an unusual material in which the optical properties of anisotropic semiconductor nanostructures can be controlled by mechanical deformation of liquid-crystalline matrix.     

Fabrication and optical property of silicon oxide layer coated semiconductor gallium nitride nanowires

Quasi one-dimensional GaN-SiO(2) nanostructures, with a silicon oxide layer coated on semiconductor GaN nanowires, were successfully synthesized through as-synthesized SiO(2) nanoparticles-assisted reaction. The experimental results indicate that the nanostructure consists of single-crystalline wurtzite GaN nanowire core, an amorphous SiO(2) outer shell separated in the radial direction. These quasi one-dimensional nanowires have the diameters of a few tens of nanometers and lengths up to several hundreds of micrometers. The photoluminescence spectrum of the GaN-SiO(2) nanostructures consists of one broad blue-light emission peak at 480 nm and another weak UV emission peak at 345 nm. The novel method, which may results in high yield and high reproducibility, is demonstrated to be a unique technique for producing nanostructures with controlled morphology.     

ZnO-聚苯胺同轴纳米线及其列阵的制备和表征

以阳极氧化铝膜 (AAO)作模板 ,制备聚苯胺 (PANI)纳米管和PANI纳米管列阵 ;同时利用溶胶_凝胶法制备ZnO_PANI同轴纳米线和同轴纳米线列阵 .PANI纳米管和ZnO_PANI同轴纳米线的形貌通过透射电子显微镜表征 .PANI纳米管的外径约 3 0nm ,内径约 1 0nm ;ZnO_PANI同轴纳米线直径约 60nm .实验发现 ,较之ZnO纳米线 ,同轴AAO模板中纳米线列阵的可见光发射谱带兰移 ,强度显著增强 ,这可能和PANI链上的NH基团与表面Zn2 +离子之间的相互作用有关 ,以及由于ZnO纳米微粒在PANI上富集、PANI的光生载流子部分转移给ZnO微粒所致 .实验还发现分散在NaOH溶液中的同轴纳米线 ,其可见光发射谱带比AAO模板中同轴纳米线的谱带兰移更甚