Sol-gel template synthesis and photoluminescence of n- and p-type semiconductor oxide nanowires. |
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Authors: | Huaqiang Cao Xianqing Qiu Yu Liang Lei Zhang Meijuan Zhao Qiming Zhu |
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Institution: | Department of Chemistry, Tsinghua University, Beijing 100084 (China). hqcao@mail.tsinghua.edu.cn |
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Abstract: | A sol-gel template technique has been put forward to synthesize single-crystalline semiconductor oxide nanowires, such as n-type SnO2 and p-type NiO. Scanning electron microscopy and transmission electron microscopy observations show that the oxide nanowires are single-crystal with average diameters in the range of 100-300 nm and lengths of over 10 microm. Photoluminescence (PL) spectra show a PL emission peak at 401 nm for n-type semiconductor SnO2, and a PL emission at 407 nm for p-type semiconductor NiO nanowires, respectively. Correspondingly, the observed violet-light emission at room temperature is attributed to near-band-edge emission for SnO2 nanowires and the 3d(7)4s-->3d8 transition of Ni2+ for NiO nanowires. |
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Keywords: | nanostructures metal oxides photoluminescence semiconductors sol–gel processes |
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