基于太赫兹量子阱探测器的太赫兹量子级联激光器发射谱研究

采用一个光谱匹配的太赫兹(THz)量子阱探测器(QWP)研究了一激射频率约为41 THz的THz量子级联激光器(QCL)在不同驱动电流下的发射谱,分析了测量得到的发射谱谱型和谱峰位置,根据测量的发射谱估算了太赫兹量子级联激光器发射功率随驱动电流变化的情况,从而得到了THz QCL激射的电流密度范围及其阈值电流密度.文中还研究了THz QWP在不同温度下对THz QCL 激光辐射的响应特性.研究结果表明,THz QWP在表征THz QCL的发射谱方面是一种很好的探测器,并有望成为未来THz通信中的接收装置. 关键词： 太赫兹量子阱探测器 太赫兹量子级联激光器 太赫兹通信 Fourier变换红外光谱     

开放简并二能级原子系统F_g=2F_e=1跃迁中的量子相干效应

文章分析了满足Fg=2Fe=1跃迁的开放简并二能级原子系统在磁场作用下的量子相干效应。该模型中,驱动场的偏振方向平行于磁场方向且与探针光偏振方向相互垂直。由于驱动场和塞曼分裂对原子的耦合作用,在不同驱动场拉比频率作用下将会分别出现电磁诱导透明(EIT)和电磁诱导吸收(EIA)效应,同时伴随相应的正常色散和反常色散。通过控制驱动场强度可以有效控制系统的量子相干效应,同时实现光速调控。     

GaN量子点层厚度对太赫兹量子点级联激光器有源区优化设计的影响

近年来,随着太赫兹科学技术的兴起,Ga N基量子级联激光器成为进一步提高太赫兹源工作温度潜力的研究方向之一。半导体量子点由于其优越的量子限制效应对改善光电器件的特性有重要的作用。本文系统研究了引入Ga N量子点后,Ga N量子点层厚度对双阱结构周期的Al_xGa_1-xN/Al_yGa_1-yN太赫兹量子点级联激光器的有源区结构优化设计的影响,并考虑了各种不同掩埋量子点的阱层厚度的影响。发现该结构中量子点层厚度越小,跃迁发光能级的能量间隔越小,且处于太赫兹光能量范围内;反之量子点层厚度越大,明显超出了太赫兹范围,尤其超过2 nm后压电极化效应使量子点左侧的阱中的三角形势垒抬高,更加不利于发光跃迁的进行。因此量子点级联激光器要产生太赫兹波段的辐射需要量子点层厚度足够小,对该结构来说应小于等于1 nm。此外还发现总体上跃迁发光的能级间隔几乎不受掩埋量子点的阱层厚度的影响。这些研究结果可为引入Ga N量子点的Al_xGa_1-xN/Al_yGa_...     

基于量子限制的受主带间跃迁太赫兹探测器的制备与测量

使用分子束外延生长设备,在GaAs（100）衬底上生长了量子阱宽度为3 nm的GaAs/AlAs多量子阱样品,并在量子阱层中央进行了Be受主的δ-掺杂。根据量子限制受主从束缚态到非束缚态之间的跃迁,设计并制备了δ-掺杂Be受主GaAs/AlAs多量子阱太赫兹光探测器原型器件。在4.2 K温度下,分别对器件进行了太赫兹光电流谱和暗电流-电压曲线的测量。在6 V直流偏压下,空穴载流子沿量子阱层方向输运。当正入射激光频率为6.8 THz时,器件响应率为2×10^-4 V/W（2 μA/W）。通过器件的暗电流-电压曲线计算了器件全散粒噪声电流,在4.2 K、6 V直流偏压下,全散粒噪声电流为5.03 fA·Hz^-1/2。     

InAs/GaSb量子阱中太赫兹光电导特性

太赫兹技术由于具有重大的科学价值及应用前景而引起了广泛关注,其核心问题是性能优异的室温太赫兹辐射源和探测器研究.本文用半经典的玻尔兹曼方程方法研究了In As/Ga Sb量子阱系统中载流子对电磁场的响应,运用平衡方程方法求解玻尔兹曼方程得到了量子阱系统中的光电导,系统地研究了量子阱结构对光电导的影响,揭示了在该量子阱系统中光电导产生的物理机制.研究发现,量子阱结构主要通过调节载流子的能级、浓度和波函数的耦合影响光电导,对称性较好的量子阱结构(8 nm-8 nm)的光电导信号更强,其峰值落在太赫兹区(0.2 THz),并且在低温下器件的性能较好,温度升高则吸收峰略有降低,且光电导峰值发生红移.研究结果表明该量子阱系统可以用作室温太赫兹光电器件.     

半导体量子阱中激子波函数及其 Fourier系数的计算和应用

利用准玻色子方法发展的激子动力学方程是研究半导体纳米结构中激子超快动力学的有效理论手段. 为了将这种方法应用于半导体量子阱, 需要知道量子阱中的激子波函数及其在动量空间的表示, 从而得到激子动力学方程中所必须的系数. 详细讨论了理想和实际量子阱中的激子波函数, 特别是其在动量空间的表示, 并进一步讨论了激子动力学方程中所必须系数的计算方法. 通过求解这些系数, 对量子阱中因激子密度变化而引起的太赫兹脉冲作用下激子能级间跃迁过程中的非线性效应进行了理论预测, 得到了与实验符合很好的结果.     

SiGe/Si多量子阱中的光致子带间吸收研究

本文论述了硅锗量子阱中的光致子带间吸收的机理,并在实验中探测SiGe/Si量子阱价带间的红外光致吸收.载流子由氩离子激光器作为光泵浦源产生,所导致的红外吸收由一个步进式傅里叶变换光谱仪来探测.在硅锗量子阱中的光致吸收有两个来源:类似单一掺杂的SiGe薄层的体吸收的自由载流子吸收,及量子阱价带的子带间吸收.实验探测了TE和TM偏振方向的吸收.TM偏振方向的吸收是由偏离布里渊带中心的载流子的跃迁所造成的.我们认为这种光致吸收技术在研究价带耦合效应及其对子带间吸收的影响是非常有效的.     

半导体中相干控制光电流对光场的偏振依赖性

采用黄金定则方法和Kane六能带模型，分析了半导体中的量子干涉控制光生电流效应.计算了不同偏振光场下载流子在动量空间的初始布居分布，从微观上阐明了相干电流对光场的偏振依赖特性.在平行线偏振情况下，相干电流方向沿光场的偏振方向；而在正交线偏振情况下，电流方向与倍频光的偏振方向相同.还证明了只有当单光子跃迁和双光子跃迁相平衡时才能获得最大的电流注入效率. 关键词： 量子干涉 光电流 线偏振光     

散射在太赫兹吸收谱定量分析中的应用研究

基于太赫兹光谱的物质成分定量分析是太赫兹技术重要的应用方向之一。但是当太赫兹波入射样品时,会与样品颗粒在微观尺度下发生散射效应,造成太赫兹波强度的衰减。因此实验测得的样品的太赫兹吸收谱主要由两部分组成,即样品本身对太赫兹波的吸收以及由散射效应造成的衰减。尤其是当样品的颗粒尺寸与太赫兹波的波长接近或可相比拟时,散射效应更为明显。在以往的太赫兹定量分析领域,往往仅考虑了Lambert-Beer定律,即物质对光的吸收与其浓度成线性变化的关系,而忽视了散射效应的作用,导致定量分析的准确度受到了限制。在对混合物样品的太赫兹波段散射效应进行分析的基础上,采用类比的方法,提出了混合物的太赫兹吸收谱模型,并通过一系列定量分析实验验证了该模型的有效性。在对多组混合物样品的定量分析实验中,定量分析误差普遍小于3%,较之仅考虑Lambert-Beer定律而言准确度得到了大幅提高,表明研究散射效应对提高太赫兹定量分析的准确度具有重要作用。     

InGaAs/InAlAs多量子阱结构的量子限制Stark效应研究

通过吸收光电流谱的测量.观察到用国产MBE设备生长的与InP衬底晶格匹配的In-GaAs/InAlAs多量子阱结构的量子限制Stark效应及其与光偏振方向有关的各向异性电吸收特性.报道了可用于波导型调制器制作的MQW样品材料的X射线双晶衍射结果,并用计算机模拟出与实测十分相似的曲线,得到了可靠的量子阱结构参数,证明样品材料具有优良的外延质量.利用等效无限深阱模型进行的理论计算表明,应考虑样品p-i-n结内建电场的影响,才能使算出的吸收边红移与实验值符合. 关键词：     

Theoretical Study on Absorption of Magnetically Tunable Terahertz Quantum-Well Photodetectors

Because of the Zeeman splitting effect in diluted semiconductor (Zn,Cd,Mn)Se, the absorption spectrum of ZnSe/(Zn,Cd,Mn)Se quantum wells can be adjusted by magnetic field effectively. Within the effective-mass approximation, the conduction electronic structure and the absorption spectrum of ZnSe/(Zn,Cd,Mn)Se quantum wells subjected to in-plane magnetic fields are investigated. Our theoretical results show that it is possible to use the ZnSe/(Zn,Cd,Mn)Se quantum well as magnetically tunable terahertz photodetectors.     

Optical absorption and electromagnetically induced transparency in semiconductor quantum well driven by intense terahertz field

An approach for solving the excitonic absorption in a semiconductor quantum well driven by an intense terahertz field is presented.The formalism relies on the stationary single-photon Schro¨dinger equation in the full quantum mechanical framework.The optical absorption dynamics in both weak and strong couplings are discussed and compared.The excitonic absorption spectra show the Autler-Townes doublets for the resonance terahertz field,a replica peak for the non-resonance terahertz field,and the electromagnetically induced transparency phenomenon for modulating the decay rate of the second electron state in the weak coupling.In particular,the electromagnetically induced transparency phenomenon window range is discussed.In the strong coupling region,the multi-order energy level resonance splitting due to the strong optical field is found.There are three(non-resonance terahertz field) or four(resonance terahertz field) peaks in the optical absorption spectra.This work provides a simple and convenient approach to deal with the optical absorption in the exciton system.     

Tunable enhanced transmission of terahertz radiation through an array of subwavelength holes perforated on a semiconductor film by applying external static magnetic fields

We numerically investigated the tunability of resonance terahertz frequencies of enhanced transmission through a two-dimensional array of holes perforated on a semiconductor film by external static magnetic fields using FDTD methods. We found that the in-plane surface-plasmon polaritons-induced transmission peaks shifted appreciably to longer wavelengths when a moderate magnetic field is applied parallel to the patterned semiconductor film and perpendicular to the electric fields of the incident electromagnetic waves. In particular, there is another transmission peak on which the tuning effect is neglectable, indicating that different mechanism accounts for it.     

Magneto-gyrotropic photogalvanic effects in GaN/AlGaN two-dimensional systems

Magneto-gyrotropic photogalvanic and spin-galvanic effects are observed in (0001)-oriented GaN/AlGaN heterojunctions excited by terahertz radiation. We show that free-carrier absorption of linearly or circularly polarized terahertz radiation in low-dimensional structures causes an electric photocurrent in the presence of an in-plane magnetic field. Microscopic mechanisms of these photocurrents based on spin-related phenomena are discussed. Properties of the magneto-gyrotropic and spin-galvanic effects specific for hexagonal heterostructures are analyzed.     

THz emission from semiconductor surfaces

We provide a review of experimental and theoretical work on electromagnetic terahertz pulse emission from semiconductor surfaces excited by femtosecond laser radiation. The main terahertz emission mechanisms are analysed. The terahertz emission from InAs and Ge is explained by the photo-Dember effect and electric field induced optical rectification. Electronic band structure and carrier scattering mechanisms are investigated by means of terahertz emission and absorption spectroscopy in InAs, InSb and Ge. To cite this article: V.L. Malevich et al., C. R. Physique 9 (2008).     

Intraband Dynamics and Terahertz Emission in Biased GaAs/In0.53Ga0.47As Semiconductor Superlattices

Using an excitonic basis, we investigate the intraband polarization, opticalabsorption spectra, and terahertz emission of semiconductor superlattice withthe density matrix theory. The excitonic Bloch oscillation is driven by the dcand ac electric fields. The slow variation in the intraband polarizationdepends on the ac electric field frequency. The intraband polarizationincreases when the ac electric field frequency is below the Bloch frequency.When the ac electric field frequency is above the Bloch frequency, theintraband polarization downwards and its intensity decreases. The satellitestructures in the optical absorption spectra are presented. Due to excitonicdynamic localization, the emission lines of terahertz shift in different acelectric field and dc electric field.     

Quantum derivatives and terahertz gain in a superlattice

Simple formulas describing terahertz absorption and gain in a semiconductor superlattice irradiated by a microwave pump field are derived for the case when the signal frequency is a half harmonic of the pump. A simple qualitative analysis provides a geometric interpretation of the derived formulas, which can be used to determine if gain is feasible.     

Active optical control of the terahertz reflectivity of high-resistivity semiconductors

We study theoretically and demonstrate experimentally light-controllable terahertz reflectivity of high-resistivity semiconductor wafers. Photocarriers created by interband light absorption form a thin conducting layer at the semiconductor surface, which allows the terahertz reflectivity of the element to be tuned between antireflective (R <3%) and highly reflective (R >85%) limits by means of the intensity and wavelength of the optical illumination.     

Optical absorption in asymmetric double quantum wells driven by two intense terahertz fields

Optical absorption is investigated for asymmetric double quantum wells driven by a resonant terahertz field and a varied terahertz field both polarized along the growth direction. Rich nonlinear dynamics of the replica peak and the Autler-Townes splitting of various dressed states are systematically studied in undoped asymmetric double quantum wells by taking account of multiple factors, such as the frequency of the varied terahertz field and the strength of the resonant terahertz field. Each electron subband splits into two dressed states when the resonant terahertz field is applied in the absence of the varied terahertz field, the optical absorption spectrum shows the first order Autler-Townes splitting of the electron subbands. When a varied terahertz field is added into the resonant system, the replica peak and the second order Autler-Townes splitting of the dressed states near the band edge respectively emerge when the varied terahertz field is non-resonant and resonant with these dressed states. When the strength of the resonant terahertz field is increased, the first order Autler-Townes double peaks and the replica peak in the optical absorption spectrum shift with the shifts of the dressed states. The presented results have potential applications in electro-optical devices.     

Comparative study of coherent terahertz emission from Fe/Pt ferromagnetic heterostructures

The ultrafast spin dynamic of in-plane magnetized Fe/Pt films was investigated by terahertz emission spectroscopy. The amplitude of the emitted terahertz wave is proportional to the intensity of the exciting laser beams.Both the amplitude and polarity of the terahertz wave can be adjusted by modifying the external magnetic field.The dependency of the amplitude on external magnetic fields is coincident to the hysteresis loops of the sample.Also, the polarity of the terahertz wave is reversed, as the magnetization orientation is reversed. The superdiffusive transient spin current with an inverse spin Hall effect is attributed to the main mechanism of the terahertz emission.