对称GaAs/Al0.3Ga0.7As双量子阱中激子的束缚能

在有效质量近似下采用简单的尝试波函数变分地计算了对称GaAs/Al0.3Ga0.7As双量子阱中激子体系束缚能,研究了体系束缚能随阱宽和垒宽的变化情况.发现双量子阱中激子体系束缚能随阱宽变化同单量子阱情况类似,但束缚能的峰值出现在阱宽为10(A)左右,峰值位置小于单阱的情况;束缚能随垒宽的增加有一极小值,这与波函数向垒中的渗透有关.     

对称GaAs/Al0.3Ga0.7As双量子阱中激子的束缚能

在有效质量近似下采用简单的尝试波函数变分地计算了对称GaAs/Al_0.3Ga_0.7As双量子阱中激子体系束缚能，研究了体系束缚能随阱宽和垒宽的变化情况. 发现双量子阱中激子体系束缚能随阱宽变化同单量子阱情况类似，但束缚能的峰值出现在阱宽为10?左右，峰值位置小于单阱的情况；束缚能随垒宽的增加有一极小值，这与波函数向垒中的渗透有关.     

半导体微结构物理效应及其应用讲座第三讲半导体的激子效应及其在光电子器件中的应用

人们对半导体中的电子空穴对在库仑互作用下形成的激子态及其有关的物理性质进行了深入研究.激子效应对半导体中的光吸收、发光、激射和光学非线性作用等物理过程具有重要影响,并在半导体光电子器件的研究和开发中得到了重要的应用.与半导体体材料相比,在量子化的低维电子结构中,激子的束缚能要大得多,激子效应增强,而且在较高温度或在电场作用下更稳定.这对制作利用激子效应的光电子器件非常有利.近年来量子阱、量子点等低维结构研究获得飞速的进展,已大大促进了激子效应在新型半导体光源和半导体非线性光电子器件领域的应用.     

耦合量子阱中激子凝聚的研究进展

近年来，半导体量子阱中激子的玻色一爱因斯坦凝聚研究取得了很大进展．实验上利用耦合量子阱间接激子中电子和空穴在空间上的分离，显著提高了激子的冷却速度和寿命，成功地把激子冷却到1K以下，观察到了激子的准凝聚状态，并且在强激光照射下，发现了随光照强度增强而增大的激子发光环和环上形成的有规则斑点图案，引起了广泛的兴趣和重视．理论研究表明，发光环的出现是电子和空穴在量子阱中的反常输运行为造成的，但环上形成规则斑点的物理机理目前尚不清楚．文章介绍了这方面的实验背景和形成激子环的物理图像，指出了理论研究中存在的问题，并对解决问题的方案进行了讨论．     

ZnSe-ZnTe多量子阱室温下的反射型皮秒激子光双稳

本文首次研究了ZnSe-ZnTe多量子阱在室温下的反射型皮秒激子光双稳,实验结果表明,ZnSe-ZnTe多量子阱在室温下的反射型皮秒光双稳的阈值光强和对比度分别为1.1MW/cm²和6:1.根据测量得到的ZnSe-ZnTe多量子阱在室温下的激子吸收光谱及激子的非线性吸收理论,归结ZnSe-ZnTe多量子阱室温下的皮秒光双稳的主要非线性机理为ZnSe-ZnTe多量子阱的激子饱和吸收引起的折射率变化.     

ZnSe-ZnS多量子阱中激子动力学及受激发射

本文讨论了在ZnSe薄膜材料及ZnSe-ZnS多量子阱中宽阱材料和窄阱材料的激子弛豫过程和在窄阱材料中激子受激发射.     

半导体量子阱中自由激子稳态荧光特征

在不同晶格温度和不同激发光强度下，测量了四元系GaInAsSb/GaAlAsSb单量子阱中自由激子的荧光光谱，导出了稳态光谱测量条件下自由激子荧光强度与激发光强度和晶格温度的一般性公式.计算结果表明，激子相对占有数引起的温度和密度效应会影响激子发光的强度关系.根据本文的简单模型，线性比例系数I/I₀实际上综合地反映了量子阱中自由激子的荧光效率，而从激子荧光强度的Arrhenius图的最佳拟合中不仅可以得到激子的束缚能和激活能，而且还能估计出量子阱材料的本底浓度和散射时间常数. 关键词：     

量子点激子超辐射的条件和量子点集合的相干辐射

半导体量子点的激子超辐射出现的条件是本文激子超辐射的理论研究中的重点,我们的理论推导结果揭示要观测到半导体量子点的激子超辐射必须采用短于百飞秒的激发源。我们用ZnO单量子点观察到激子超辐射,同时测量和分析讨论了量子点集合的相干辐射性质,发现单量子点超辐射的二次方泵浦与辐射强度关系被大量量子点间的线性递增所掩盖。     

(CdZnTe,ZnSeTe)/ZnTe复合量子阱中激子隧穿过程

设计了(CdZnTe,ZnSeTe)/ZnTe复合量子阱结构,并用吸收光谱、室温光致发光谱和飞秒脉冲抽运-探测方法研究了该复合结构中的激子隧穿过程.分别测量了该结构中CdZnTe/ZnTe量子阱层和ZnSeTe/ZnTe量子阱层中激子衰减时间.观察到从CdZnTe/ZnTe量子阱层向ZnSeTe/ZnTe量子阱层的快速激子隧穿,隧穿时间为5.5ps. 关键词： (CdZnTe ZnSeTe)/ZnTe复合量子阱 激子 隧穿 抽运-探测     

核壳结构CdSe/ZnS量子点量子阱中1se1sh 激子光跃迁的受激光子回波研究

在建模和理论分析的基础上, 对三脉冲飞秒激光作用下核壳结构CdSe/ZnS量子点量子阱中1s_e1s_h激子光跃迁引起的受激光子回波效应进行了深入研究.运用有效质量近似方法求解了载流子的静态薛定谔方程,得到能量本征值和对应波函数.基于光学Bloch方程,分析了受激光子回波的参量相关性.结果显示受激光子回波信号可以通过量子点量子阱结构和尺寸的改变进行有效调节.同时,在量子尺寸限制理论的基础上讨论了结构和尺寸的变化对受激光子回波信号的具体影响.     

Photon emission induced by elastic exciton-carrier scattering in semiconductor quantum wells

We present a study of the elastic exciton-electron (X-e⁻) and exciton-hole (X-h) scattering processes in semiconductor quantum wells, including fermion exchange effects. The balance between the exciton and the free carrier populations within the electron-hole plasma is discussed in terms of ionization degree in the nondegenerate regime. Assuming a two-dimensional Coulomb potential statically screened by the free carrier gas, we apply the variable phase method to obtain the excitonic wavefunctions, which we use to calculate the 1s exciton-free carrier matrix elements that describe the scattering of excitons into the light cone where they can radiatively recombine. The photon emission rates due to the carrierassisted exciton recombination in semiconductor quantum-wells (QWs) at room temperature and in a low density regime are obtained from Fermi’s golden rule, and studied for mid-gap and wide-gap materials. The quantitative comparison of the direct and exchange terms of the scattering matrix elements shows that fermion exchange is the dominant mechanism of the exciton-carrier scattering process. This is confirmed by our analysis of the rates of photon emission induced by electron-assisted and hole-assisted exciton recombinations.     

Excitonics of semiconductor quantum dots and wires for lighting and displays

In the past two decades, semiconductor quantum dots and wires have developed into new, promising classes of materials for next‐generation lighting and display systems due to their superior optical properties. In particular, exciton–exciton interactions through nonradiative energy transfer in hybrid systems of these quantum‐confined structures have enabled exciting possibilities in light generation. This review focuses on the excitonics of such quantum dot and wire emitters, particularly transfer of the excitons in the complex media of the quantum dots and wires. Mastering excitonic interactions in low‐dimensional systems is essential for the development of better light sources, e.g., high‐efficiency, high‐quality white‐light generation; wide‐range color tuning; and high‐purity color generation. In addition, introducing plasmon coupling provides the ability to amplify emission in specially designed exciton–plasmon nanostructures and also to exceed the Förster limit in excitonic interactions. In this respect, new routes to control excitonic pathways are reviewed in this paper. The review further discusses research opportunities and challenges in the quantum dot and wire excitonics with a future outlook.     

Absorption and photoluminescence studies of the temperature dependence of exciton life time in lattice-matched and strained quantum well systems

We present systematic studies of the temperature dependence of linewidths and lifetimes of excitonic transitions in quantum wells grown by molecular beam epitaxy using both photoluminescence(PL) and optical absorption. The temperature ranged from 6K to room temperature. Samples under investigation were lattice-matched GaAs/AlGaAs and InGaAs/InAlAs, and strained InGaAs/GaAs and InGaAs/AlGaAs quantum wellssystems. In addition, the effects of well-size variations in GaAs/AlGaAs quantum wells were measured and analyzed. In all cases we were able to observe the excitonic transitions up to room temperature. By a careful fitting of the experimental data we separated the exciton transitions from band-to-band transitions. By deconvoluting the excitonic transitions we obtained the homogeneous and inhomogeneous linewidths. The homogeneous linewidths were used to calculate the exciton lifetimes as a function of temperature using the Heisenberg uncertainty principle. We found the lifetime decreases significantly with temperature and increases with increasing well size. These results are interpreted in terms of the exciton-phonon interaction and are expected to be very useful for the design of semiconductor optical devices operating at different temperatures.     

Coherent nonlinear optical response of single quantum dots studied by ultrafast near-field spectroscopy

The nonlinear response of single GaAs quantum dots is studied in femtosecond near-field pump-probe experiments. At negative time delays, transient reflectivity spectra show pronounced oscillatory structure around the quantum dot exciton line, providing the first evidence for a perturbed free induction decay of the excitonic polarization. Phase-disturbing Coulomb interactions between the excitonic polarization and continuum excitations dominate the optical nonlinearity on ultrafast time scales. A theoretical analysis based on the semiconductor Bloch equations accounts for this behavior.     

CdSe/ZnS纳晶中相干电声耦合效应的二维电子光谱研究

Coherent exciton-phonon coupling in CdSe/ZnS nanocrystals have been investigated by temperature-dependent two-dimensional electronic spectroscopy (2DES) measurements. Benefiting from the ability of 2DES to dissect assembles in nanocrystal films, we have clearly identified experimental evidences of coherent coupling between exciton and phonon in CdSe/ZnS nanocrystals. In time domain, 2DES signals of excitonic transitions beat at a frequency resonant to a longitudinal optical phonon mode; in energy domain, phonon side bands are distinct at both Stokes and anti-Stokes sides. When temperature increases, phonon-induced exciton dephasing is observed with dramatic broadening of homogeneous linewidth. The results suggest exciton-phonon coupling is essential in elucidating the quantum dynamics of excitonic transitions in semiconductor nanocrystals.     

Nonlinear magnetooptical absorption in a semiconductor

The influence of an external magnetic field on the optical characteristics of the exciton spectra of a semiconductor is studied. It is shown that the diamagnetic shift of the exciton level essentially changes the dynamics of the exciton absorption. The combination of the excitonic and magnetic properties of a crystal in the range of excitonic frequencies gives new opportunities to control the bistable behavior of the crystal. It is revealed that the magnetooptical response of the semiconductor to the laser field gives rise to bistable loops with respect to both the intensity of the incident light and the magnitude of the magnetic field.     

Theory of multi-exciton states in semiconductor nanocrystals

In this article, the fundamental physics of multi-exciton states in semiconductor nano-crystals is reviewed focusing on the mesoscopic enhancement of the excitonic radiative decay rate and the excitonic optical nonlinearity and the mechanism of their saturation with increase of the nanocrystal size. In the case of the radiative decay rate the thermal excitation of excited exciton states having small oscillator strength within the homogeneous linewidth of the exciton ground state is essential in determining the saturation behavior. The weakly correlated exciton pair states are found to cause a cancellation effect in the third-order nonlinear optical susceptibility at the exciton resonance, providing the first consistent understanding of the experimentally observed saturation of the mesoscopic enhancement of the excitonic optical nonlinearity. The presence of the weakly correlated exciton pair states is confirmed convincingly from the good correspondence between theory and experiments on the induced absorption spectra from the exciton state in CuCl nanocrystals. Furthermore, ultrafast relaxation processes of biexcitons are discussed in conjunction with the observed very fast rise of the biexciton gain in nanocrystals. In prospect of future progress in research, the theoretical formulation to calculate the triexciton states as one of the multi-exciton states beyond the biexciton is presented for the first time including the electron-hole exchange interaction.     

Bose-Einstein condensate of cavity exciton polaritons in a trap

The properties of traps for exciton polaritons in a semiconductor microcavity with an embedded quantum well have been considered. The behavior of the two-component Bose-Einstein condensate of photons and excitons described by the coupled system of Gross-Pitaevskii equations has been investigated. The analytical solutions for weak-confinement traps have been found in the Thomas-Fermi approximation. In the case of strong confinement, the behavior of the condensate has been investigated and constraints on the possible values of the chemical potential of the system have been obtained. The wavefunctions and generally different spatial profiles of the coupled photon and exciton condensates have been found.     

Linear and nonlinear optical properties of excitons in semiconductor quantum wells and microcavities

Linear and nonlinear light propagation in single and multiple quantum wells and in semiconductor microresonators are studied on the basis of Maxwell’s equations. The treatment includes radiative broadening of quantum-confined excitons, radiative coupling between quantum wells as well as coupling of quantum wells to the cavity field of a microresonator for steady state or ultrashort pulse excitation. The dynamical evolution of the coherent quantum-well polarization under the influence of many-body effects is studied within a microscopic model. The theory is used to investigate the influence of exciton saturation and dephasing on pulse propagation and excitonic normal-mode coupling.     

Resonant Raman Scattering by excitonic polaritons in semiconductors

We report results on Resonant Raman Scattering (RRS) mediated by excitonic polaritons in a high-purity semiconductor (CdTe) at low temperatures. For the first time ingoing and outgoing resonances at the n = 1, 2, 3 exciton states are detected on the one and two LO-phonon RRS. The transformation at resonance of sharp Raman peaks into well-thermalized exciton luminescence bands is observed for every ingoing, outgoing or intermediate state resonance.