共查询到19条相似文献,搜索用时 187 毫秒
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利用等离子体增强化学气相沉积法制备Si-rich SiNx/N-rich SiNy多层膜,分别使用热退火和激光辐照技术对多层膜进行退火,以构筑三维限制、尺寸可控、有序的硅纳米晶.实验结果表明,经退火后,纳米硅晶粒在Si-rich SiNx子层内形成,其尺寸可由Si-rich SiNx子层厚度调控.实验还发现,激光辐照技术相比于热退火能更有效地改善多层膜的微结构,提高多层膜的晶化率,以激光技术诱导晶化的Si-rich SiNx/N-rich SiNy多层膜作为有源层构建电致发光器件,在室温下观察到了增强的电致可见发光,并且发光效率较退火前提高了40%以上.
关键词:
氮化硅
多层膜
限制结晶
纳米晶硅 相似文献
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利用磁控溅射分层制备Ag和SiO2薄膜,通过快速热处理,使Ag颗粒富集在复合薄膜的表面.研究了Ag膜层厚度、退火时间、退火温度和退火方式对Ag颗粒形貌的影响,以及Ag颗粒致密度对其共振吸收的影响.结果表明:通过控制每层Ag膜的厚度,可有效控制Ag颗粒形貌.当每层金属为2 nm、退火温度为500 ℃时,形成的颗粒粒径大小均匀且致密度较高.通过间断退火可有效降低Ag颗粒的粒径.发现Ag颗粒表面等离子共振吸收并没有随颗粒粒径的减小而明显降低,甚至提高.这和以往的报道不同.通过深入研究金属颗粒表面等离子体产生机理,发现其表面等离子共振吸收增强的原因是致密度较高的颗粒表面能级与费米能级差值较大,Ag颗粒内部的电子向颗粒表面迁移越多,形成新的费米能级E'F的电子数就越多,表面等离子共振吸收就越强.最终得出了金属颗粒共振吸收不单纯依赖于金属粒径、和颗粒的致密度也有很大关系的结论. 相似文献
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采用直流磁控溅射的方法制备了一系列(CoPt/Ag)n多层膜,然后在不同温度下 进行了退火处理,并对其结构和磁性做了初步的表征,研究了Ag的含量以及薄膜中每一单元 厚度与总厚度对退火后薄膜的结构以及磁性能的影响.结果表明,膜厚较薄时(大约20 nm)有 利于薄膜沿(001)取向生长,Ag的加入不但能够抑制CoPt晶粒的过分长大还可以诱导薄膜的( 001)取向,使退火后的薄膜在垂直于膜面方向上的矫顽力大大增强.对于特定组分为Co 40Pt43Ag17的薄膜,经600℃退火后已经显示了明显的(001) 取向,垂直于膜面方向上的矫顽力为5.6×105 A/m,饱和磁化强度为0.65T, 并 且磁滞回线具有很好的矩形度,剩磁比(s)为0.95.
关键词:
磁记录材料
磁性薄膜
CoPt/Ag纳米复合膜 相似文献
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用Mg/B多层膜退火的方法制备了一系列MgB2超导薄膜,研究了退火温度、退火时间和薄膜厚度对于MgB2薄膜性质的影响.厚度为250 nm的Mg/B多层膜经400 ℃低温退火后已经生成超导相,此厚度薄膜750 ℃下退火20—30 min实现最佳超导转变温度(Tc).前驱膜分层厚度相同时,随着薄膜厚度减小MgB2薄膜Tc明显降低,而且较薄的膜Tc
关键词:
2超导薄膜')" href="#">MgB2超导薄膜
电子束蒸发
超导成相 相似文献
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研究了结构为 (FM/SiO2)3/Ag/(SiO2/FM)3 多层膜的巨磁阻抗(GMI)效应(这里的F M≡FeCuCrVSiB).多层膜采用射频溅射法沉积在单晶Si衬底上,沉积过程中,沿膜面长方 向施加约72kA/m的磁场,然后在不同的温度下对样品进行了退火处理.结果表明,该多层膜 样品即使在沉积态便具有相当好的软磁性能和GMI效应,在7MHz的频率下,最大纵向和横向 巨磁阻抗比分别为45%和44%.在230℃下经90min退火处理后的样品具有最佳的GMI效应,在85MHz的频率下,最大纵向和横向巨磁阻抗比分别达到251%和277%.与磁性层总厚度相同的FeCuCrVSiB/Ag/FeCuCrVSiB三层膜相比较,在这种多层结构中出现的GMI效应更强.
关键词:
多层膜
巨磁阻抗效应
趋肤效应
有效磁导率 相似文献
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Transparent conductive ITO/Ag/ITO multilayer electrodes deposited by sputtering at room temperature 总被引:2,自引:0,他引:2
ITO/Ag/ITO multilayers have been prepared onto conventional soda lime glass substrates by sputtering at room temperature. The optical and electrical characteristics of single layer and multilayer structures have been investigated as a function of the Ag and ITO film thicknesses. Transmittance and sheet resistance values are found mainly dependent on the Ag film thickness; whereas the wavelength range at which the maximum transmittance is achieved can be changed by adjusting the ITO films thickness. ITO/Ag/ITO electrodes with sheet resistance below 6 Ω/sq have been obtained for Ag film thickness above 10 nm and ITO layers thickness in the 30-50 nm range. These multilayers also show high transmittance in the visible spectral region, above 90% by discounting the glass substrate, with a maximum that is located at higher wavelengths for thicker ITO. 相似文献
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表面等离子体共振是一种免标记的传感技术,当介质周围的介电常数发生改变时,则SPR谐振光谱特性也会随之改变.因此表面等离子体共振传感技术已广泛应用于生物化学和环境监测等领域.由于二氧化钛(TiO2)覆盖层不仅可以保护金属层,还能调谐SPR谐振的光谱强度和谐振波长于近红外波段,应用于1550 nm的光纤传感,其氧化还原反应... 相似文献
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采用双槽电化学腐蚀法以电阻率为10-15 Ω·cm的p型<100>晶向的单晶硅片制备了孔径约为1.5 μm, 孔深约为15-20 μm的p型多孔硅, 并以此多孔硅作为基底采用无电沉积法通过调控沉积时间在其表面沉积了不同厚度的银纳米颗粒薄膜. 采用扫描电子显微镜和X 射线衍射仪表征了银纳米颗粒/多孔硅复合材料的形貌和微观结构, 结果表明银纳米颗粒较均匀的分布于多孔硅的表面上且沉积时间对产物的形貌有重要影响. 采用静态配气法在室温下研究了银纳米颗粒/多孔硅复合材料对NH3的气敏性能. 气敏测试结果表明沉积时间对产物的气敏性能影响较大. 当沉积时间较短时, 适量银纳米颗粒掺杂的多孔硅复合材料由于其较高的比表面积以及特殊的形貌和结构, 对NH3气体表现出较高的灵敏度、优良的响应/恢复性能. 室温下, 其对50 ppm 的NH3气体的气敏灵敏度可以达到5.8左右. 相似文献
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Thermal stability of Ag layer on Ti coated Si substrate for different thicknesses of the Ag layer have been studied. To do this, after sputter-deposition of a 10 nm Ti buffer layer on the Si(1 0 0) substrate, an Ag layer with different thicknesses (150-5 nm) was sputtered on the buffer layer. Post annealing process of the samples was performed in an N2 ambient at a flow rate of 200 ml/min in a temperature range from 500 to 700 °C for 30 min. The electrical property of the heat-treated multilayer with the different thicknesses of Ag layer was examined by four-point-probe sheet resistance measurement at the room temperature. Phase formation and crystallographic orientation of the silver layers were studied by θ-2θ X-ray diffraction analysis. The surface topography and morphology of the heat-treated films were determined by atomic force microscopy, and also, scanning electron microscopy. Four-point- probe electrical measurement showed no considerable variation of sheet resistance by reducing the thickness of the annealed Ag films down to 25 nm. Surface roughness of the Ag films with (1 1 1) preferred crystallographic orientation was much smaller than the film thickness, which is a necessary condition for nanometric contact layers. Therefore, we have shown that the Ag layers with suitable nano-thicknesses sputtered on 10 nm Ti buffer layer were thermally stable up to 700 °C. 相似文献
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利用溶胶-凝胶技术与电子束蒸镀相结合的方法在常温下制备了叠层V2O5/Ag/V2O5(VAV)透明导电薄膜,研究了各层薄膜厚度对叠层结构光电特性的影响。用原子力显微镜、紫外-可见光分光光度计、四探针电阻仪及开尔文探针对样品的表面形貌、光电性能及功函数等性质进行了表征。实验结果表明,该薄膜具有良好的光学和电学性质,可见光(380~780 nm)平均透过率达75%,迁移率为16.89 cm2/(V·s),载流子浓度为-1.043×1022 cm-3,方块电阻值为15.1 Ω/□,功函数为5.17 eV。该制备方法降低了V2O5薄膜的工艺制备难度,为该材料在太阳能电池中的应用创造了良好的前期基础。 相似文献
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室温下采用射频磁控溅射氧化锌(ZnO)粉末靶、银(Ag)靶,在玻璃衬底上制备ZnO/Ag/ZnO透明导电薄膜。首先,ZnO厚度为30 nm时,改变Ag厚度制备3层透明导电薄膜,研究Ag层厚度及膜层间配比对光电性能的影响;其次,按ZnO∶Ag厚度比为30∶11比例制备不同厚度的3层透明导电薄膜,研究多层厚度对薄膜光电性能的影响。结果表明:Ag厚度为8 nm及11 nm的ZnO/Ag/ZnO表面相对平整,结晶程度较好,在可见光范围内最高透过率达到90%及86%,并且方块电阻为6 Ω/□及3.20 Ω/□,具有优良的光电性;当按配比制备ZnO/Ag/ZnO 3层膜时,增加ZnO厚度对Ag层的增透作用反而减弱,同时增加Ag层厚度也会降低3层薄膜的整体光学性。 相似文献
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A phenomenological approach nto investigate the effect of interfacial layers on the absorption of metaldielectric composite at elevated temperatures is put forward by making use of a model in which weakly nonlinear spherical metallic particles with linear concentric shells are randomly embedded in a linear host.Corresponding formulae in terms of the interfacial factor are derived in detail by incorporating Taylor expansion and Drude model.We take Ag/MgF2 composite as numerical calculation.It is concluded that such absorption is dependent not only on the temperature,but also on the properties of interfacial layers.Many other interesting phenomena are shown. 相似文献
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The magnetic properties of Fe–SiO2 nanogranular composite thin films were studied as a function of film thickness and Fe concentration, f, using ferromagnetic resonance at X-band (9.4 GHz) and Q-band (35 GHz). Films with an Fe volume percent ranging from 17% to 70% were fabricated from a mosaic target using RF sputtering techniques. Film thickness was varied between 10 and 200 nm. From measurements made at room temperature with the external field applied parallel and perpendicular to the film plane, it was possible to determine an almost linear dependence of the effective anisotropy field with Fe concentration. Small differences observed between X- and Q-band, specially at low f, were attributed to the effects that the different fields applied during the experiment cause on the magnetic state of the sample. No systematic change of the effective field or the g value was observed in films of different thickness. The absorption line width, on the other hand, was found to depend on film thickness indicating a larger distribution of particle shape and size with increasing film thickness. A maximum in the line width was observed around f30–35% and is probably caused by the transition from single domain ferromagnetic clusters to superparamagnetic particles. 相似文献