| 基于Si-rich SiNx/N-rich SiNy多层膜结构的量子点构筑及发光特性 |
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| 引用本文： | 黄锐,王旦清,宋捷,丁宏林,王祥,郭艳青,陈坤基,徐骏,李伟,马忠元.基于Si-rich SiNx/N-rich SiNy多层膜结构的量子点构筑及发光特性[J].物理学报,2010,59(8):5823-5827. |
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| 作者姓名： | 黄锐 王旦清 宋捷 丁宏林 王祥 郭艳青 陈坤基 徐骏 李伟 马忠元 |
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| 作者单位： | (1)韩山师范学院物理与电子工程系,潮州 521041; (2)南京大学物理系,固体微结构物理国家重点实验室,南京 210093 |
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| 基金项目： | 国家重点基础研究发展计划(批准号:2006CB932202,2007CB613401),国家自然科学基金(批准号:60806046)资助的课题. |
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| 摘 要： | 利用等离子体增强化学气相沉积法制备Si-rich SiNx/N-rich SiNy多层膜,分别使用热退火和激光辐照技术对多层膜进行退火,以构筑三维限制、尺寸可控、有序的硅纳米晶.实验结果表明,经退火后,纳米硅晶粒在Si-rich SiNx子层内形成,其尺寸可由Si-rich SiNx子层厚度调控.实验还发现,激光辐照技术相比于热退火能更有效地改善多层膜的微结构,提高多层膜的晶化率,以激光技术诱导晶化的Si-rich SiNx/N-rich SiNy多层膜作为有源层构建电致发光器件,在室温下观察到了增强的电致可见发光,并且发光效率较退火前提高了40%以上.
关键词：
氮化硅
多层膜
限制结晶
纳米晶硅
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| 关 键 词： | 氮化硅 多层膜 限制结晶 纳米晶硅 |
| 收稿时间： | 2009-09-22 |
Fabrication and luminescence properties of Si quantum dots based on Si-rich SiNx/N-rich SiNy multilayer |
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| Huang Rui,Wang Dan-Qing,Song Jie,Ding Hong-Lin,Wang Xiang,Guo Yan-Qing,Chen Kun-Ji,Xu Jun,Li Wei,Ma Zhong-Yuan.Fabrication and luminescence properties of Si quantum dots based on Si-rich SiNx/N-rich SiNy multilayer[J].Acta Physica Sinica,2010,59(8):5823-5827. |
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| Authors: | Huang Rui Wang Dan-Qing Song Jie Ding Hong-Lin Wang Xiang Guo Yan-Qing Chen Kun-Ji Xu Jun Li Wei Ma Zhong-Yuan |
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| Institution: | State Key Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing 210093, China;State Key Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing 210093, China;Department of Physics and Electrical Engineering, Hanshan Normal University, Chaozhou 521041, China;Department of Physics and Electrical Engineering, Hanshan Normal University, Chaozhou 521041, China;Department of Physics and Electrical Engineering, Hanshan Normal University, Chaozhou 521041, China;Department of Physics and Electrical Engineering, Hanshan Normal University, Chaozhou 521041, China;State Key Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing 210093, China;State Key Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing 210093, China;State Key Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing 210093, China;State Key Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing 210093, China |
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| Abstract: | SiN-based multilayers were prepared in a plasma enhanced chemical vapor deposition system followed by subsequently thermal annealing and laser irradiation with the aim of fabrication three-dimensional constrained, size-controlled and well-regulated Si nanocrystals. The experimental results show that Si nanocrystals grow in the Si-rich SiN sublayer. Furthermore, the grain size can be controlled according to the thick of Si-rich SiN. It is also found that the crystalline fraction of the multilayers irradiated by laser is significantly higher than that by thermal annealing. The devices that employing the laser-irradiated multilayer as luminescent active layer exhibit an enhanced visible electroluminescence and the external quantum efficiency is improved by 40% in comparison with the device without annealing. |
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| Keywords: | silicon nitride multilayer constrained crystallization Si nanocrystals |
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