用粉末靶在玻璃和PI衬底上制备AZO/Ag/AZO薄膜

室温下在玻璃和聚酰亚胺两种不同衬底上, 采用射频磁控溅射法溅射掺铝氧化锌(AZO)粉末靶和固体Ag靶, 制备了两组AZO/Ag/AZO 3层透明导电薄膜, 研究了AZO层厚度对不同衬底3层膜结构和光电性能的影响.结果表明:不同衬底的两组AZO/Ag/AZO薄膜均为多晶膜.当Ag层厚度不变时, 随着AZO层厚度的增加, 两组薄膜电学性能变化不大, 透射峰向长波方向移动.玻璃和PI衬底上制备的AZO(30 nm)/Ag(14 nm)/AZO(30 nm)薄膜, 在550 nm处的透光率分别为85%和70%, 方块电阻分别为2.6 Ω/□和4.6 Ω/□.     

磁控溅射制备本征ZnO/Ag/ZnO透明导电薄膜的性质研究

室温下采用射频磁控溅射氧化锌（ZnO）粉末靶、银（Ag）靶,在玻璃衬底上制备ZnO/Ag/ZnO透明导电薄膜。首先,ZnO厚度为30 nm时,改变Ag厚度制备3层透明导电薄膜,研究Ag层厚度及膜层间配比对光电性能的影响;其次,按ZnO∶Ag厚度比为30∶11比例制备不同厚度的3层透明导电薄膜,研究多层厚度对薄膜光电性能的影响。结果表明：Ag厚度为8 nm及11 nm的ZnO/Ag/ZnO表面相对平整,结晶程度较好,在可见光范围内最高透过率达到90%及86%,并且方块电阻为6 Ω/□及3.20 Ω/□,具有优良的光电性;当按配比制备ZnO/Ag/ZnO 3层膜时,增加ZnO厚度对Ag层的增透作用反而减弱,同时增加Ag层厚度也会降低3层薄膜的整体光学性。     

外加磁场对射频磁控溅射制备铝掺杂氧化锌薄膜影响的研究

利用射频磁控溅射法制备了铝掺杂氧化锌(AZO)透明导电薄膜,在传统的磁控溅射系统中引入外加磁场,研究了外加磁场对AZO薄膜沉积速率、形貌结构及光电特性的影响.研究结果表明,外加磁场后薄膜的沉积速率从不加磁场的13.04 nm/min提高到了19.93 nm/min;外加磁场后薄膜表面平整致密、颗粒大小均匀,结晶质量较高,而不加磁场薄膜表面形貌呈蠕虫状,薄膜质量较差.溅射时间为90 min时,外加磁场前后AZO薄膜方阻分别为30.74?/和12.88?/.外加磁场对薄膜可见光透过率影响不大,但使薄膜的吸收边蓝移现象更明显.运用ansys软件对磁控溅射二维磁场分布模拟后发现,外加磁场提高了靶上方横向磁场强度,改善了磁场分布的均匀性,加强了磁场对电子的磁控作用,提高了靶电流,是AZO薄膜的溅射速率、光电性能和形貌结构得到提高和优化的原因.     

Ag缓冲层对ZnO:Al薄膜结构与光电性能的改善

在室温条件下,采用射频磁控溅射法在玻璃基底上制备出了一系列高质量的AZO薄膜和不同Ag缓冲层厚度的AZO/Ag/AZO复合薄膜.利用x射线衍射和原子力显微镜分别对薄膜的物相和表面形貌进行了表征;利用霍尔效应测试仪和紫外一可见光分光光度计等实验技术对薄膜的光电性能进行了研究.实验结果表明,Ag缓冲层厚度对AZO薄膜的晶体结构和光电性能影响较大.当Ag层厚度为10 nm时,AZO(30nm)/Ag(10 nm)/AZO(30 nm)薄膜拥有最优品质因子,为1.59×10~(-1)Ω~(-1),方块电阻为0.75Ω/□,可见光区平均透过率为84.2%.另外,薄膜电阻随温度的变化趋势呈现金属电阻随温度的变化特性,光电热稳定性较好.     

基于铝浸润层的超薄银透明导电薄膜研究北大核心CSCD

超薄银薄膜具有高柔韧性和优良的光电性能,是用于透明导电电极的潜在材料。通过电阻热蒸发技术以金属铝作为浸润层制备超薄银透明导电薄膜。引入铝浸润层降低银薄膜的阈值厚度,使银薄膜在K9玻璃基底上以尽可能低的厚度达到连续。对不同厚度铝浸润层上银薄膜方块电阻进行测试,经SEM图像验证后得出,1 nm铝浸润层对银薄膜具有较好的浸润效果。随后采用相同的工艺在1 nm铝浸润层上制备了不同厚度的银薄膜,透过率和方阻测试结果表明,1 nm铝浸润层上制备的10 nm银薄膜方阻值可达到13Ω/,其在0.4μm~2.5μm波段内透过率可达到50%以上。     

功率密度对中频磁控溅射制备 AZO薄膜性能的影向

利用中频磁控溅射法在普通玻璃衬底上沉积掺铝氧化锌(ZnO ∶ Al,简称AZO)薄膜,通过调整溅射功率密度参数得到沉积速率与功率密度之间的关系,制备了不同厚度的AZO薄膜.利用台阶仪、XRD、XPS、紫外可见分光光度计和Hall测试系统等方法研究了功率密度与厚度对AZO薄膜结构、组分、光学和电学性能的影响.实验结果表明...     

VO_2/AZO复合薄膜的制备及其光电特性研究

采用直流磁控溅射和后退火氧化的方法在掺铝氧化锌(AZO)导电玻璃上制备了二氧化钒(VO2)薄膜,研究了不同的退火温度、退火时间对VO2/AZO复合薄膜制备的影响,并对复合薄膜的结构、组分、光电特性进行了测试与分析.结果表明,导电玻璃上的AZO没有改变VO2的取向生长,但明显改变了VO2薄膜的表面形貌特征.与用相同工艺和条件在普通玻璃基底上制备的VO2薄膜相比,VO2/AZO复合薄膜的相变温度降低约25?C,热滞回线宽度收窄至6?C,相变前后可见光透过率均在50%以上,1500 nm处红外透过率约为55%和21%,电阻率变化达3个数量级.该复合薄膜表面平滑致密,制备工艺简单,性能稳定,可应用于新型光电器件.     

衬底温度对磁控溅射法制备的Ag/AZO绒面背反电极性能的影响

通过优化薄膜硅基太阳能电池的背反电极,使背反电极表面出现均匀的类金字塔结构,能够增大入射光在结区的有效光程,提高光子的捕获率,进而会提高薄膜硅基太阳能电池的光电转换效率.本文采用磁控溅射技术在载玻片上制得Ag/AZO(ZnO∶Al)导电薄膜.在控制其它溅射参量为最优化的情况下,研究了衬底温度对Ag/AZO导电薄膜光电性能及其表面形貌的影响.研究表明:随着衬底温度的增加,薄膜的雾度在可见光范围内先增大后减小;当衬底温度为500℃时,雾度取得最大值,在可见光范围内平均达到了95%以上;电阻率随着衬底温度的增加逐渐增大,且衬底温度超过500℃时电阻率急剧增大.在综合考虑其光电性能的情况下,实验得到当衬底温度为500℃时,所获得的叠层薄膜表面雾度值最好且电阻率很小,这将有助于改善太阳能电池的性能.     

基于AZO/VO_2/AZO结构的电压诱导相变红外光调制器

采用直流磁控溅射和后退火工艺先在掺Al氧化锌(AZO)导电玻璃基底上制备了高质量的VO_2薄膜,再在VO_2膜层上制备AZO导电膜,最终制备出了AZO/VO_2/AZO三明治结构.测试了VO_2/AZO复合薄膜和AZO/VO_2/AZO三明治结构的组分、微结构以及光学特性,结果表明VO_2/AZO复合薄膜在800—2300 nm红外区域其相变前后的最大透过率差值达24%,而AZO/VO_2/AZO三明治结构在相同波长范围内其相变前后的最大透过率差值可达31%.通过在AZO/VO_2/AZO三明治结构导电膜层上施加不同电压,观察到不同外界温度下电流的突变,当外界温度越高,所需阈值电压越低.AZO/VO_2/AZO三明治结构性能稳定,制备工艺简单,有望应用于集成式红外光调制器.     

H2 气对脉冲磁控溅射铝掺杂氧化锌薄膜性能的影响

实验采用脉冲磁控溅射法制备铝掺杂氧化锌(AZO)薄膜.为了进一步提高AZO薄膜的光电性能,在溅射过程中加入一定流量的氢气,以高纯ZnO ∶Al₂O₃陶瓷靶为溅射靶材,制备AZO/H透明导电薄膜.通过测试薄膜的结构特性、表面形貌及其光电性能,详细地研究了氢气流量对AZO薄膜性能的影响.溅射过程中引入氢气,可以促进薄膜的晶化,提高薄膜的迁移率和透过率(400—1100 nm).采用纯氩气溅射制备AZO薄膜的电阻率为5.664×10^-4 Ω·cm 关键词： 氧化锌 氢气流量 磁控溅射 太阳电池     

Study on the electrical and optical properties of Ag/Al-doped ZnO coatings deposited by electron beam evaporation

A layer of silver was deposited onto the surface of glass substrates, coated with AZO (Al-doped ZnO), to form Ag/AZO film structures, using e-beam evaporation techniques. The electrical and optical properties of AZO, Ag and Ag/AZO film structures were studied. The deposition of Ag layer on the surface of AZO films resulted in lowering the effective electrical resistivity with a slight reduction of their optical transmittance. Ag (11 nm)/AZO (25 nm) film structure, with an accuracy of ±0.5 nm for the thickness shows a sheet resistance as low as 5.6 ± 0.5 Ω/sq and a transmittance of about 66 ± 2%. A coating consisting of AZO (25 nm)/Ag (11 nm)/AZO (25 nm) trilayer structure, exhibits a resistance of 7.7 ± 0.5 Ω/sq and a high transmittance of 85 ± 2%. The coatings have satisfactory properties of low resistance, high transmittance and highest figure of merit for application in optoelectronics devices including flat displays, thin films transistors and solar cells as transparent conductive electrodes.     

Influence of various thickness metallic interlayers on opto-electric and mechanical properties of AZO thin films on PET substrates

Various thickness metallic interlayers to improve the opto-electric and mechanical properties of aluminum-doped zinc oxide (AZO) thin films deposited on flexible polyethylene terephtalate (PET) substrates are studied. The effects of the interlayers on the resistance and transmittance of the AZO thin films are discussed. The result shows that the metallic interlayers effectively improve the electric resistance but reduce the optical transmittance of the AZO thin films. These phenomena become more obvious as the interlayer thickness increases. However, the AZO with an aluminum interlayer still behaves an acceptable transmittance. Moreover, mechanical tests indicate that the aluminum interlayer increases the hardness and modulus, and reduce the residual stress of the AZO thin films. In contrast, the silver and copper interlayers decrease the AZO's mechanical properties. Comparing to those without any interlayer, the results show that the best interlayer is the 6 nm thick aluminum film.     

TCO/Ag/TCO transparent electrodes for solar cells application

Among transparent electrodes, transparent conductive oxides (TCO)/metal/TCO structures can achieve optical and electrical performances comparable to, or better than, single TCO layers and very thin metallic films. In this work, we report on thin multilayers based on aluminum zinc oxide (AZO), indium tin oxide (ITO) and Ag deposited by RF magnetron sputtering on soda lime glass at room temperature. The TCO/Ag/TCO structures with thicknesses of about 50/10/50 nm were deposited with all combinations of AZO and ITO as top and bottom layers. While the electrical conductivity is dominated by the Ag intralayer irrespective of the TCO nature, the optical transmissions show a dependence on the nature of the top and bottom TCOs, mainly due to the change in the reflectivity of the multilayers. Structural, electrical and optical properties are studied to optimize the structure for very thin transparent electrodes suitable for photovoltaic applications.     

Introduction of Ag nanoparticles by picosecond LIFT to improve the photoelectric property of AZO films

The photoelectric properties of conductive films are improved by doping Ag on aluminum-doped zinc oxide(AZO) films by laser induced forward transfer(LIFT).Firstly,the picosecond laser induced transfer mechanism of Ag films was revealed by numerical simulation;then,different-thickness Ag films were deposited on the AZO films by picosecond LIFT.When the film thickness is 30 nm and,50 nm,we have successfully obtained some Ag-AZO films with better optoelectronic properties by adjusting the laser parameters.     

The enhanced conductivity and stability of AZO thin films with a TiO2 buffer layer

Aluminum doped zinc oxide (AZO) films were substitutes of the SnO₂:F films on soda lime glass substrate in the amorphous thin-film solar cells due to good properties and low cost. In order to improve properties of AZO films, the TiO₂ buffer layer had been introduced. AZO films with and without TiO₂ buffer layer were deposited on soda lime glass substrates by r.f. magnetron sputtering. Subsequently, one group samples were annealed in vacuum (0.1 Pa) at 500 °C for 120 s using the RTA system, and the influence of TiO₂ thickness on the properties of AZO films had been discussed. The XRD measurement results showed that all the films had a preferentially oriented (0 0 2) peak, and the intensity of (0 0 2) peak had been enhanced for the AZO films with TiO₂ buffer layer. The resistivity of TiO₂ (3.0 nm)/AZO double-layer film is 4.76×10⁻⁴ Ω cm with the maximum figure merit of 1.92×10⁻² Ω⁻¹, and the resistivity has a remarkable 28.7% decrease comparing with that of the single AZO film. The carrier scattering mechanism of TiO₂ (3.0 nm)/AZO double-layer film had been described by Hall measurement in different temperatures. The average transmittance of all the films exceeded 92% in the visible spectrum. Another group samples were heat treated in the quartz tube in air atmosphere, and the effect of TiO₂ thickness on thermal stability of AZO films had been discussed.     

Influence of Zr(50)Cu(50) thin film metallic glass as buffer layer on the structural and optoelectrical properties of AZO films

Aluminum-doped ZnO(AZO) thin films with thin film metallic glass of Zr(50)Cu(50) as buffer are prepared on glass substrates by the pulsed laser deposition. The influence of buffer thickness and substrate temperature on structural, optical, and electrical properties of AZO thin film are investigated. Increasing the thickness of buffer layer and substrate temperature can both promote the transformation of AZO from amorphous to crystalline structure, while they show(100)and(002) unique preferential orientations, respectively. After inserting Zr(50)Cu(50) layer between the glass substrate and AZO film, the sheet resistance and visible transmittance decrease, but the infrared transmittance increases. With substrate temperature increasing from 25℃ to 520℃, the sheet resistance of AZO(100 nm)/Zr(50)Cu(50)(4 nm) film first increases and then decreases, and the infrared transmittance is improved. The AZO(100 nm)/Zr(50)Cu(50)(4 nm) film deposited at a substrate temperature of 360℃ exhibits a low sheet resistance of 26.7 ?/, high transmittance of 82.1% in the visible light region, 81.6% in near-infrared region, and low surface roughness of 0.85 nm, which are useful properties for their potential applications in tandem solar cell and infrared technology.