传输线模型测量Au/Ti/p型金刚石薄膜的欧姆接触电阻率

采用传输线模型测量了重B掺杂p型金刚石薄膜(约10²⁰cm^-3)上Ti/A u欧姆接触电阻率ρ_c,测试了500℃退火前后及大电流情况下的I-V特性,研究 了退火对ρ_c的影响.结果表明,重掺杂和退火工艺是改善欧姆接触的有效手段. ρ_c随测试温度的变化表明金属/半导体接触界面载流子输运机制为隧道穿透.而 光照对ρ_c影响的分析表明金刚石可作为理想窗口材料.测试得到的最低ρ _c值约为10^-4Ωcm². 关键词： 金刚石薄膜 欧姆接触 接触电阻率     

不同氧含量Bi2Sr2CaCu2O８+δ单晶电阻率的各向异性

精确测量了在不同氧压下退火的单晶Bi₂Sr₂CaCu₂O_8+δ(Bi2212)样品的Cu-O面内和Cu-O面外的电阻率ρ_c(T)和ρ_ab(T).发现ρ_c(T)和各向异性比(ρ_c(T)/ρ_ab(T))随着载流子浓度增加而迅速下降.在过掺杂样品中,高于120K时,ρ_c随温度线性下降,而各向异性 关键词：     

碱金属掺杂富勒烯超导体的临界温度和约化能隙研究

碱金属掺杂富勒烯与传统的超导体情况不同，它有一个很宽区域的声子谱，其最高频率和最低频率分别与费密能Ｅ_F和零温超导能隙△₀为同一数量级，这必将导致对原来强耦合超导电性理论的修正。本文在此情况下求解Ｅｌｉａｓｈｂｅｒｇ方程，得到Ｔ_c和△₀的表达式。结果表明，分子间的低频振动模和分子上的高频振动模同样参与电声耦合，Ｔ_c主要取决于声子谱中高频成份的贡献，而△₀的增加主要取决于声子谱中 关键词：     

Gd1-xCaxBa2Cu3O7-y高温超导体压力效应的研究

研究了Ｇｄ_1-xＣａ_xＢａ₂Ｃｕ₃Ｏ_7-y（０．０≤Ｘ≤０．２０）高温超导体在常压和高压下的超导电性在１－３００Ｋ温度范围内，利用Ｂｒｉｄｇｍａｎ对顶砧获得压力达９．０ＧＰａ，测量了（Ｘ＝０．１０，０．１５，０．２０）样品的ｄＴ_c／ｄｐ分别为７．６８，７．８和４．４６Ｋ／ＧＰａ。发现Ｔ_c的压力导数随着ｃａ²⁺含量的增加而下降，分析了氧含量对Ｔ_c和ｄＴ_c／ｄＰ的影响．利用常压下晶格参数精修值和阳离子与氧离子间距随压力的改变，说明ＣｕＯ₂面在超导电性上的作用，用ＣｕＯ₂面之间耦合解释Ｔ_c（Ｐ）曲线的非线性关系。 关键词：     

向列相液晶电流体不稳定性——偏置电场效应

本文考虑了外电场与液晶盒玻璃片法线成倾角θ₀时,沿面排列的向列相液晶(θ_α<0,σ_α>0)的电流体不稳定性现象。在Dubois-Violette等人的一维理论的基础上,我们获得了直流、正弦波和矩形波三种电场激发下的失稳条件。重要结果包括:(1)电荷弛豫时间随θ₀单调上升。(2)对于MBBA液晶,存在一个临界角θ_c(ω)(ω是外场频率),当θ₀>θ_c(ω) 关键词：     

金属-块状半导体的接触电阻率——四点结构模型

本文提出一种测量金属-半导体体样品的接触电阻率ρ_c的方法——四点结构模型。四个金属电极的排列不受任何限制,导出了ρ_c的表达式。如果样品不是半无限大,而是有一定厚度的薄片,则必须进行修正,给出了修正因子。根据这个模型,进行实验测量和计算,所得结果与文献报道的一致。 关键词：     

镁-锌时效合金中一维过渡相β′2的晶体学研究

采用X射线衍射方法,显示出镁-5Wt％锌合金在165℃时效初期有两种过渡相β′₁和β′₂共存。对细杆状过渡相,β′₂的一维衍射现象进行了详细分析。这种过渡相具有六角点阵结构,其[0001]轴是杆的长轴,它的点阵常数及与母相间的取向关系经测定为:a_(β′2)=13.2?,c_(β′2)=5.25?,[0001]_{(β′2)关键词：}     

R1-xPrxBa2Cu3O7-δ超导Tc平台的离子尺寸效应

系统地研究了Ｒ_1-xＰｒ_xＢａ₂Ｃｕ₃Ｏ_7-δ的超导Ｔ_c与Ｐｒ替代浓度ｘ的关系。发现在离子半径ｒ_i≤ｒ_i（Ｄｙ）时，在低Ｐｒ浓度范围内存在一个超导Ｔ_c平台，并且平台宽度表明一个Ｒ^３＋离子尺寸效应。我们认为，Ｔ_c平台宽度的离子尺寸效应可能起源于Ｐｒ４ｆ电子局域态的改变。提出一个临界Ｒ^３＋离子半径ｒ_ic，ｒ_i＞ｒ_ic时ＲＢａ₂Ｃｕ₃Ｏ_7-δ的超导电性消失 关键词：     

准二维电荷密度波导体磷酸钨青铜(PO2)4(WO3)2 m(m=6)的磁电阻研究

对准二维电荷密度波导体磷酸钨青铜(PO₂)₄(WO₃)_2m(m=6)在2—300K温区内的磁电阻及在2K时的Δρ/ρ_０-B关系进行了 实验研究.利用电子磁击穿模型对其低温端的磁阻增强行为进行了分析解释,理论和实验相 符合,并估算出高温端第一个Peierls能隙的大小为3.0meV,电子在低温下的迁移率为0.0 42m²V^-1s^-1 关键词： 低维导体磁电阻 电荷密度波     

影响Salisbury屏高频响应的若干因数

应用传输线理论研究了金属薄膜Salisbury屏的反射率频谱特性，得到了Salisbury屏的反射系数公式和带宽系数的表达式.理论和数值分析表明，Salisbury屏的反射频谱是谐振型的；在谐振频率处，反射率的大小仅与金属薄膜的归一化面电阻α有关，而在其他频率处则取决于α和隔离层波阻抗η₂.反射率带宽系数Δ取决于反射率的考察值Γ_α,η₂和α.当α→α_c,η₂→η₀时，Δ取得极 关键词： Salisbury屏 反射率 频带宽度 金属薄膜     

Ti--Al based ohmic contacts to n-type 6H-SiC with P+ ion implantation

The Ti--Al ohmic contact to n-type 6H-SiC has been fabricated. An array of TLM (transfer length method) test patterns with Au/Ti/Al/Ti/SiC structure is formed on N-wells created by P⁺ ion implantation into Si-faced p-type 6H-SiC epilayer. The specific contact resistance \rho _c as low as 8.64×10^-6\Omega\cdot cm² is achieved after annealing in N₂ at 900℃ for 5\,min. The sheet resistance R_sh of the implanted layers is 975\Omega/\sqcap\!\!\!\!\sqcup. X-ray diffraction (XRD) analysis shows the formation of Ti_-3SiC₂ at the metal/n-SiC interface after thermal annealing, which is responsible for the low resistance contact.     

The effect of a surface layer capping p-InGaN/p-GaN superlattices on the contact to p-GaN

In this study, the influence of the surface layer (p-InGaN or p-GaN) capping p-InGaN/p-GaN superlattices (SLs) on the contact to p-type GaN was investigated. It was found that the specific contact resistance (_ρc)$\left({\rho }_c\right)$ to p-type GaN is lower when using p-InGaN as the surface layer. The lowest value of _ρc${\rho }_c$ was 1.99×10⁻⁴ Ω cm² at room temperature. It was also found that low temperature growth of the p-GaN layers in the SLs is beneficial for lowering the ohmic contact resistance. Unlike Ni/Au deposited directly on p-GaN (without the strained p-InGaN/p-GaN SLs), Ni/Au deposited on p-InGaN/p-GaN SLs produces ohmic behavior even before annealing.     

Formation of the intermediate semiconductor larger for the Ohmic contact to silicon carbide using Germanium implantation

By formation of an intermediate semiconductor layer (ISL) with a narrow band gap at the metallic contact/SiC interface, this paper realises a new method to fabricate the low-resistance Ohmic contacts for SiC. An array of transfer length method (TLM) test patterns is formed on N-wells created by P⁺ ion implantation into Si-faced p-type 4H-SiC epilayer. The ISL of nickel-metal Ohmic contacts to n-type 4H-SiC could be formed by using Germanium ion implantation into SiC. The specific contact resistance ρ_c as low as 4.23× 10^-5~Ωega \cdotcm² is achieved after annealing in N₂ at 800~°C for 3~min, which is much lower than that (>900~°C) in the typical SiC metallisation process. The sheet resistance R_sh of the implanted layers is 1.5~kΩega /\Box. The technique for converting photoresist into nanocrystalline graphite is used to protect the SiC surface in the annealing after Ge⁺ ion implantations.     

The influence of electronic transport across interface junction between Si substrate and the root of ZnO micro-prism on field emission performance

ZnO micro-prisms are prepared on the p-type and n-type Si substrates, separately. The $I$--$V$ curves analysed by AFM show that the interface junctions between the ZnO micro-prisms and the p-type substrate and between the ZnO micro-prisms and the n-type Si substrate exhibit p--n junction behaviour and ohmic contact behaviour, respectively. The formation of the p--n heterojunction and ohmic contact is ascribed to the intrinsic n-type conduction of ZnO material. Better field emission performance (lower onset voltage and larger emission current) is observed from an individual ZnO micro-prism grown on the n-type Si substrate. It is suggested that the n-Si/n-ZnO interfacial ohmic contact benefits the electron emission; while the p-Si/n-ZnO interface heterojunction deteriorates the electron emission.     

Structural and electronic properties of mixed Au/Te/n-GaAs structures

The structural and electronic properties of the intermixed interfaces of layered Au/Te/n-GaAs structures were investigated by the combined application of¹²⁹I Mössbauer spectroscopy (in the decay of^129mTe), X-ray diffraction, Raman spectroscopy and electrical measurements. The transition from Schottky-type to ohmic contact by high fluence pulsed laser irradiation was examined and compared to rapid time furnace heat treatment. Distinctly different ohmic contact formation mechanisms have been observed. Whereas for furnace alloying the formation of a crystalline (graded As doped) Ga₂Te₃ interface layer is crucial, strong evidence is adduced that the ohmic character of high-fluence laser mixed structures is correlated to the formation of a high density of defect complexes in the GaAs top layer.     

GaP低阻欧姆接触层的AES和SIMS分析

本文用AES和SIMS分析讨论了p-GaP与三层金属膜Pd/Zn/Pd形成良好欧姆接触层的性质.     

Assortativity of complementary graphs

Newman's measure for (dis)assortativity, the linear degree correlationρ _D , is widely studied although analytic insight into the assortativity of an arbitrary network remains far from well understood. In this paper, we derive the general relation (2), (3) and Theorem 1 between the assortativity ρ _D (G) of a graph G and the assortativityρ _D (G ^c) of its complement G ^c. Both ρ _D (G) and ρ _D (G ^c) are linearly related by the degree distribution in G. When the graph G(N,p) possesses a binomial degree distribution as in the Erd?s-Rényi random graphs G _p (N), its complementary graph G _p ^c (N) = G _{1- p} (N) follows a binomial degree distribution as in the Erd?s-Rényi random graphs G _{1- p} (N). We prove that the maximum and minimum assortativity of a class of graphs with a binomial distribution are asymptotically antisymmetric: ρ _max(N,p) = -ρ _min(N,p) for N → ∞. The general relation (3) nicely leads to (a) the relation (10) and (16) between the assortativity range ρ _max(G)–ρ _min(G) of a graph with a given degree distribution and the range ρ _max(G ^c)–ρ _min(G ^c) of its complementary graph and (b) new bounds (6) and (15) of the assortativity. These results together with our numerical experiments in over 30 real-world complex networks illustrate that the assortativity range ρ _max–ρ _min is generally large in sparse networks, which underlines the importance of assortativity as a network characterizer.     

Formation of p-type layer by KrF excimer laser doping of carbon into GaAs in CH4 gas ambient

Carbon doping of GaAs using a KrF excimer laser to form a p-type active layer is described. Methane gas (CH₄) was used as a source of the C acceptor. Various quantities such as sheet resistance, surface carrier density, Hall mobility, and depth profile of C-doped GaAs are measured as the functions of laser fluence and laser pulse. It is shown that C atoms are doped only within a limited depth as shallow as 50 nm or less and with extremely high concentration exceeding 1×10²¹ cm^–3. The maximum activation efficiency is found to be 69.0%. Laser induced changes of surface morphologies and electron diffraction patterns are also discussed. Furthermore, non-alloyed ohmic contacts using laser-doped p-type GaAs are demonstrated.     

Interfacial reaction and electrical characteristics of Cu(RuTaNx) on GaAs: Annealing effects

This study elucidates the thermal stability and quasi ohmic contact characteristics of Cu(RuTaN_x) fabricated on a barrierless GaAs substrate. Cu(RuTaN_x) was prepared by cosputtering Cu, Ta, Ru, and N. The resistivity of the Cu(RuTaN_x)/GaAs structure annealed at 500 °C for 30 min was lower than that of the as-deposited structure, and the former was thermally stable up to 500 °C after 30 min of annealing. Further, the Cu(RuTaN_x)/GaAs structure exhibited electrical rectifying properties upon annealing at 550 °C for 10 min and revealed a quasi ohmic contact, as determined by the circular transmission line model (CTLM). The formation of quasi ohmic contact is further confirmed by transmission electron microscopy and energy dispersive X-ray spectroscopy.