Formation of the intermediate semiconductor larger for the Ohmic contact to silicon carbide using Germanium implantation |
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Authors: | Wang Yang-Yuan Guo Hui Wang Yue-Hu Zhang Yu-Ming Qiao Da-Yong and Zhang Yi-Men |
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Institution: | Micro and Nano Electromechanical Systems Laboratory,
Northwestern Polytechnical University, Xi'an 710072,
China; Microelectronics School, Xidian University,
Xi'an
710071, China and
Key Lab of Wide Band-Gap Semiconductor Materials and Devices, Xi'an
710071, China |
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Abstract: | By formation of an intermediate semiconductor layer (ISL) with a
narrow band gap at the metallic contact/SiC interface, this paper
realises a new method to fabricate the low-resistance Ohmic contacts
for SiC. An array of transfer length method (TLM) test patterns is
formed on N-wells created by P+ ion implantation into
Si-faced p-type 4H-SiC epilayer. The ISL of nickel-metal Ohmic
contacts to n-type 4H-SiC could be formed by using Germanium ion
implantation into SiC. The specific contact resistance ρc as low as 4.23× 10-5~Ωega \cdotcm2 is
achieved after annealing in N2 at 800~°C for 3~min,
which is much lower than that (>900~°C) in the typical SiC
metallisation process. The sheet resistance Rsh of the
implanted layers is 1.5~kΩega /\Box. The technique for
converting photoresist into nanocrystalline graphite is used to
protect the SiC surface in the annealing after Ge+ ion
implantations. |
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Keywords: | SiC Ohmic contact Ge ion
implantation intermediate semiconductor layer |
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