Ar离子辐照非晶态合金引起的尺寸变化

利用兰州重离子加速器(HIRFL)提供的2.79MeV/u Ar离子,在50K以下的低温辐照了Fe₄₇Ni₂₉V₂Si₆B₁₆等4种非晶态合金样品,室温下使用光学显微镜对辐照前、后的同一样品拍照,对比测量了样品的宏观尺寸. 结果表明:在辐照剂量为1.5×10¹⁴离子/cm²时,非晶态合金形变不明显,测量到的样品宽度相对增长Δb/b₀均小于1.0%;当辐照剂量增加到1.6×10¹⁵离子/cm²时,所有非晶态合金样品都发生了显著的形变,其宽度相对增长分布在4.3%—12.0%之间,对此结果进行了定性的分析.     

掺磷的硅中电子自旋共振

本文叙述了在室温、液N₂和液H₂及其降压温度下,利用3厘米波段双重调制波谱仪对掺磷原子浓度为～10¹⁵—～10¹⁸/厘米³的硅样品进行的电子自旋共振研究,文中还简述了低温控制系统。实验观察到传导电子、表面缺陷中心和电子-核超精细结构谱线,以及有效电子-施子核对的互作用谱线,并获得相应的g因子。在14°K下,得到施主核上电子波函数幅度的平方|Ψ(0)|²和电子-核超精细互作用常数α_D,与G.Feher在1.25°K下利用电子-核双共振方法得到的结果相近。     

克里奇中间体CH2OO与CF3CF=CF2反应的动力学研究

本文使用OH激光诱导荧光方法研究了结构最简单的克里奇中间体CH₂OO和CF₃CF=CF₂的反应动力学. 在压强为10 Torr条件下,测量了温度在283,298,308和318 K的反应速率常数,分别为(1.45±0.14)×10^-13,(1.18±0.11)×10^-13,(1.11±0.08)×10^-13和(1.04±0.08)×10^-13 cm³·molecule^-1·s^-1. 根据阿伦尼乌斯方程,获得该反应的活化能为(-1.66±0.21) kcal/mol. 在6.3∽70 torr压力范围内,未观察到该反应的速率常数存在压力相关.     

电子束在VO2薄膜中引起的价态、相结构和光学性能的改变

 利用能量为1.7MeV, 注量分别为1.25×10¹³/cm², 1.25×10¹⁴/cm², 1.25×10¹⁵/cm²的电子束辐照VO₂薄膜,采用XPS, XRD等测试手段对电子辐照前后的样品进行分析,并研究了电子辐照对样品相变过程中光透射特性的影响。结果表明电子辐照引起VO₂薄膜中V离子出现价态变化现象,并使薄膜的X射线衍射峰发生变化。电子辐照在样品中产生的这些变化显著改变了VO₂薄膜的热致相变光学特性。     

掺铒铋酸盐玻璃的光谱性质研究

研究了掺铒铋酸盐玻璃的吸收和荧光光谱性质,应用Judd-Ofelt理论计算了玻璃的三个强度参量Ω_t=(t=2,4,6),分别为Ω₂=3.71×10^-20cm²,Ω₄=1.86×10^-20cm²,Ω₆=1.28×10^-20cm²,计算了Er³⁺离子的自发跃迁几率、荧光分支比等光谱参量.经荧光谱测试发现掺Er³⁺铋酸盐玻璃的荧光半高宽可达70nm.应用McCumber理论计算1.53μm处的受激发射截面可达9×10^-21cm².对Er³⁺离子在不同基质玻璃中光谱特性的比较发现,Er³⁺在铋酸盐玻璃中具有相对较高的受激发射截面和宽的荧光半高宽.     

钛离子辐照对MgB2超导薄膜的载流能力和磁通钉扎能力的影响

利用混合物理化学气相沉积法(hybrid physical-chemical vapor deposition, HPCVD)可以制备出高性能的MgB₂超导薄膜, 再对薄膜进行钛(Ti)离子辐照处理.经过辐照处理后的样品被掺入了Ti元素, 与未处理的干净MgB₂样品相比,其超导转变温度没有出现大幅度的下降, 而在外加磁场下的临界电流密度得到了明显的提高,同时样品的上临界磁场也得到了提高. 在温度5 K, 外加垂直磁场为4 T的情况下, Ti离子辐照剂量为1× 10¹³/cm²的样品的临界电流密度达到了1.72× 10⁵ A/cm², 比干净的MgB₂要高出许多,而其超导转变温度仍能维持在39.9 K的较高水平.     

LiNbO3和LiTaO3晶体Er3+/Yb3+掺杂水热外延层室温吸收光谱分析

本文引入与浓度和厚度有关的k_NL待定参数, 在J-O理论基础上, 对Er³⁺/Yb³⁺掺杂的LiNbO₃和LiTaO₃单晶衬底上 的多晶水热外延样品进行了基于吸收光谱的拟合计算. LiNbO₃:Ω₂=2.34× 10^-20 cm², Ω₄=0.77× 10^-20 cm², Ω₆=0.31×10^-20 cm², k_NL=4.32× 10^-2 mol·m^-2. LiTaO₃:Ω₂=1.68×10^-20 cm², Ω₄=0.84×10^-20 cm², Ω₆=0.45×10^-20 cm², k_NL=9.17×10^-3 mol· m^-2. 该方法可尝试推广到粉体或胶体等难以直接获得浓度和厚度数据的体系. 经上转换发光测试及光谱参数计分析认为Er³⁺/Yb³⁺离子的掺杂浓度比为1:1的情况下, 样品呈现绿色上转换发光光谱; 可尝试以降低基质声子能量的方法提高⁴I_13/2能级 对²H_11/2和⁴S_3/2能级的量子剪裁效率.     

利用交流阻抗谱揭示Ir(111)电极在酸性溶液中的氢吸附动力学

本文利用阻抗谱研究Ir(111)电极在HClO₄和H₂SO₄中溶液中的氢吸附行为. 在HClO₄溶液中,随着施加电位从0.2 V降到0.1 V(vs RHE),Ir(111)电极上氢吸附速率从1.74×10^-8 mol·cm^-2·s^-1增大到 3.47×10^-7 mol·cm^-2·s^-1 . 与相同条件下Pt(111)电极上的氢吸附速率相比,Ir(111)上的氢吸附速率要小1∽2个数量级,这是由于Ir(111)电极与H₂O结合能力更强,因此位于水合氢键网络中的氢离子需要克服更高的能垒才能重新定向进而发生欠电位沉积. 在H₂SO₄溶液中,氢吸附电位负移了200 mV,吸附速率也下降了一个数量级,这是由于Ir(111)电极表面强吸附的硫酸根/硫酸氢根物种的阻碍作用. 结果表明,在电化学环境下,位于电极表面附近的水分子的取代和重新定向在很大程度上影响了氢吸附过程.     

类铷W37+离子双电子复合速率系数的理论研究

 利用全相对论组态相互作用理论方法,研究了类铷W³⁷⁺离子从基组态3s²3p⁶3d¹⁰4s²4p⁶4d经过双激发态(3s²3p⁶3d¹⁰4s²4p⁶4d)^-1nln′l′(n,n′=4,5)的双电子复合过程,得到了该离子在温度为1~5×10⁴ eV范围内的总双电子复合速率系数。分析比较了不同电子激发的双电子复合速率系数,结果表明:4p电子激发的双电子复合速率系数在低温时给出了主要贡献,而3d的贡献在高温时突出。由于强组态相互作用,两电子一光子跃迁对双电子复合速率系数的贡献不可忽略,其中辐射跃迁4p⁵4d5d5f-4p⁶4f5d的贡献是双激发态4p⁵4d5d5f总的双电子复合速率系数的5%。对双电子复合、辐射复合以及三体复合速率系数的比较表明,在所研究的温度范围内双电子复合速率系数最大。     

空气放电非平衡等离子体的模拟计算

 基于空气放电非平衡等离子体动力学,对空气放电进行了数值计算,分析了放电后等离子体中的主要粒子（N₂(v6),N₂(A3),O₂(a1),O和O₃）数密度随起始温度、电子数密度和约化场强的变化趋势。计算结果表明,随着初始温度的升高,空气放电产生的粒子数密度增加。温度为300 K时,放电产生的O原子数密度最大值约为4.90×⁷ cm^-3,而当温度升高到400 K和500 K时,O原子数密度的最大值则相应地增加到5.2×10¹⁰ cm^-3和5.51×10¹⁰ cm^-3。约化场强的影响与温度类似,其中氮气的振动激发态N₂(v6)数密度随约化场强的变化幅度不明显。电子数密度增加,粒子数密度大幅增加,氮分子的激发态N₂(A3)粒子数密度与电子数密度保持严格的线性关系。     

A novel high-voltage light punch-through carrier stored trench bipolar transistor with buried p-layer

A novel high-voltage light punch-through(LPT) carrier stored trench bipolar transistor(CSTBT) with buried p-layer(BP) is proposed in this paper.Since the negative charges in the BP layer modulate the bulk electric field distribution,the electric field peaks both at the junction of the p base/n-type carrier stored(N-CS) layer and the corners of the trench gates are reduced,and new electric field peaks appear at the junction of the BP layer/N drift region.As a result,the overall electric field in the N drift region is enhanced and the proposed structure improves the breakdown voltage(BV) significantly compared with the LPT CSTBT.Furthermore,the proposed structure breaks the limitation of the doping concentration of the N-CS layer(NN CS) to the BV,and hence a higher NN CS can be used for the proposed LPT BP-CSTBT structure and a lower on-state voltage drop(Vce(sat)) can be obtained with almost constant BV.The results show that with a BP layer doping concentration of NBP = 7 × 1015 cm-3,a thickness of LBP = 2.5 μm,and a width of WBP = 5 μm,the BV of the proposed LPT BP-CSTBT increases from 1859 V to 1862 V,with NN CS increasing from 5 × 1015 cm-3 to 2.5 × 1016 cm-3.However,with the same N-drift region thickness of 150 μm and NN CS,the BV of the CSTBT decreases from 1598 V to 247 V.Meanwhile,the Vce(sat) of the proposed LPT BP-CSTBT structure decreases from 1.78 V to 1.45 V with NN CS increasing from 5 × 1015 cm-3 to 2.5 × 1016 cm-3.     

Über Elektronendriftbeweglichkeit und Stoßionisierung in KBr-Kristallen bei hohen elektrischen Feldstärken

A swarm of electrons passing a KBr-crystal has been investigated by fast oscilloscopic techniques at high electric fields (3×10⁴ to 4×10⁵ V/cm). From the temporal current shape we determined the electron drift mobilityμ=15±2 cm²/Vsec, the electron life timeτ=2±0.3 × 10^?7 sec and the multiplication factor. From this measurement the ionization coefficientα for electrons was calculated as a function of the applied electric field.     

约化场强对氮-氧混合气放电等离子体演化特性的影响

采用零维等离子体动力学模型,计算了不同约化场强条件下N₂/O₂放电等离子体的演化特性.结果表明,平均电子能量与约化场强有着近似的线性关系,在约化场强为100 Td时,平均电子能量约为2.6 eV、最大电子能量达35 eV;约化场强是影响电子能量函数分布的主要因素.气体放电过程结束后,振动激发态氮分子的粒子数浓度不再变化,电子激发态的氮分子、原子和氧原子的粒子数浓度达到一峰值后开始降低;放电结束后的氧原子通过复合反应生成臭氧.约化场强升高,由于低能电子减少的影响,振动激发态氮分子的粒子数浓度降低,当约化场强由50 Td增加75 Td,100 Td时,粒子数浓度由3.83×10¹¹ cm^-3降至1.98×10¹¹ cm^-3和1.77×10¹¹ cm^-3,其他粒子浓度则相应增大. 关键词： 等离子体 约化场强 粒子演化 数值模拟     

电子对Cl2的离解附着

在电子平均能量为3—5电子伏的范围内,测定了Ar/Cl₂混合物中,电子对Cl₂的离解附着速率常数。结果表明,电子平均能量为3.5电子伏时,离解附着速率常数为(3.2±0.4)×10^-10厘米³/秒,并考察了速率常数与电子平均能量的关系。这些实验结果与最近Los Alamos国家实验室研究者们的类似工作的结果是一致的。 关键词：     

An AlGaN/GaN HEMT with reduced surface electric field and improved breakdown voltage

A reduced surface electric field in AlGaN/GaN high electron mobility transistor (HEMT) is investigated by employing a localized Mg-doped layer under the two-dimensional electron gas (2-DEG) channel as an electric field shaping layer. The electric field strength around the gate edge is effectively relieved and the surface electric field is distributed evenly as compared with those of HEMTs with conventional source-connected field plate and double field plate structures with the same device physical dimensions. Compared with the HEMTs with conventional source-connected field plate and double field plate, the HEMT with Mg-doped layer also shows that the breakdown location shifts from the surface of the gate edge to the bulk Mg-doped layer edge. By optimizing both the length of Mg-doped layer, L_m, and the doping concentration, a 5.5 times and 3 times the reduction in the peak electric field near the drain side gate edge is observed as compared with those of the HEMTs with source-connected field plate structure and double field plate structure, respectively. In a device with V_GS=-5 V, L_m=1.5 μm, a peak Mg doping concentration of 8× 10¹⁷ cm^-3 and a drift region length of 10 μm, the breakdown voltage is observed to increase from 560 V in a conventional device without field plate structure to over 900 V without any area overhead penalty.     

An analytical method for DC negative corona discharge in a wire-cylinder device at high temperatures

This paper proposes an analytical solution for DC negative corona discharge in a wire-cylinder device based on experimental results in which both the corona and drift regions are considered; this approach aims to provide a theoretical method for analyzing electrostatic precipitation at high temperatures. The inter-electrode space is divided into three zones, namely, the ionization layer, the attachment layer (corona region) and the drift region, to investigate the space charge concentration and the electric field distribution. The boundary of the ionization layer is assumed to be the radius at which the rate of ionization balances that of electron attachment. The radius where the value of E/N equals 110 Td is recommended as the boundary of the attachment layer. It was determined that an increasing temperature leads to a decrease in the largest space charge number density and the largest electric field in the drift region that can be provided by a discharging device. With respect to the device in the present work, when the temperature increases from 350 °C to 850 °C, the largest electric field decreases from ∼9 × 10⁶ V/m to ∼3 × 10⁶ V/m, and the largest charge number density decreases from ∼1.3 × 10¹⁵ m⁻³ to 6.4 × 10¹⁴ m⁻³. The radius of the corona region, the space charge number density and the electric field increase as the applied voltage increases at a given temperature. For example, at a temperature of 550 °C, when the applied voltage increases from 10,500 V to 18,879 V, the radius of the corona region increases from ∼2.9 mm to ∼4.9 mm. It appears to be unreasonable to use a constant value that is calculated from Peek's formula as the electric field at the surface of the cathode under all of the conditions.     

Analysis of the charge transfer mechanisms responsible for the current-voltage characteristics of Ca<Subscript>4</Subscript>Ga<Subscript>2</Subscript>S<Subscript>7</Subscript>: Eu<Superscript>3+</Superscript> single crystals

The current-voltage characteristics of Ca₄Ga₂S₇: Eu³⁺ single crystals are measured for the first time, and the processes affecting these characteristics are analyzed theoretically. It is demonstrated that Ca₄Ga₂S₇: Eu³⁺ single crystals are high-resistance semiconductors with a resistivity of ～10⁹ Ω cm and a relative permittivity of 10.55. The electrical properties of the studied materials are governed by traps with activation energies of 0.13 and 0.19 eV and a density ranging from 9.5×10¹⁴ to 2.7×10¹⁵ cm^?3. The one-carrier injection is observed in weak electric fields. In electric fields with a strength of more than 4×10³ V/cm, traps undergo thermal field ionization according to the Pool-Frenkel mechanism. At low temperatures and strong fields (160 K and 5×10⁴ V/cm), the electric current is most likely due to hopping conduction by charge carriers over local levels in the band gap in the vicinity of the Fermi level.     

A non-self-consistent electron-beam controlled discharge in methane

The use of methane in a non-self-consistent discharge controlled by an electron beam permits obtaining high discharge currents for relatively low electric fields. The current gain is 10³for 500 V/cm fields and a 14 mA/cm² injection current density. For fields greater than 7–8 kV/cm and atmospheric pressure, punch-through of the gas discharge gap occurs. It is shown that a breakpoint in the CVC in the area of low currents is associated with the appearance of spots on the cathode. A domain Instability, related to the nonmonotonic dependence of the drift velocity on the reduced field in methane, is detected.Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 4, pp. 65–68, April, 1982.     

A high voltage silicon-on-insulator lateral insulated gate bipolar transistor with a reduced cell-pitch

A high voltage( 600 V) integrable silicon-on-insulator(SOI) trench-type lateral insulated gate bipolar transistor(LIGBT) with a reduced cell-pitch is proposed.The LIGBT features multiple trenches(MTs):two oxide trenches in the drift region and a trench gate extended to the buried oxide(BOX).Firstly,the oxide trenches enhance electric field strength because of the lower permittivity of oxide than that of Si.Secondly,oxide trenches bring in multi-directional depletion,leading to a reshaped electric field distribution and an enhanced reduced-surface electric-field(RESURF) effect.Both increase the breakdown voltage(BV).Thirdly,oxide trenches fold the drift region around the oxide trenches,leading to a reduced cell-pitch.Finally,the oxide trenches enhance the conductivity modulation,resulting in a high electron/hole concentration in the drift region as well as a low forward voltage drop(Von).The oxide trenches cause a low anode-cathode capacitance,which increases the switching speed and reduces the turn-off energy loss(Eoff).The MT SOI LIGBT exhibits a BV of 603 V at a small cell-pitch of 24 μm,a Von of 1.03 V at 100 A/cm-2,a turn-off time of 250 ns and Eoff of 4.1×10?3 mJ.The trench gate extended to BOX synchronously acts as dielectric isolation between high voltage LIGBT and low voltage circuits,simplifying the fabrication processes.     

类富勒烯纳米晶CNx薄膜及其场致电子发射特性

利用微波等离子体增强化学气相沉积技术制备出了CN_x薄膜,并利用x射线光电子能谱、x射线衍射、扫描电子显微镜和Raman光谱等测试手段对所制备的CN_x薄膜的微结构和成分进行了分析.研究了其场致电子发射特性.发现薄膜的结构和场发射特性与反应系中的甲烷、氮气及氢气的流量比有关,当甲烷、氢气及氮气流量比为8/50/50 sccm时,制备的薄膜具有弯曲层状的纳米石墨晶体结构（类富勒烯结构）和很好的场发射特性.场发射阈值电场降低至1.1V/μm.当电场为5.9V/μm时,平 关键词： 类富勒烯 x薄膜')" href="#">CN_x薄膜 场致电子发射 微波等离子体增强化学气相沉积