基于多采样率的复合频率信号频率计设计

研究一种20 Hz～20 kHz双频复合频率的信号频谱在工程技术领域中具有重要应用意义;在对复合频率信号频谱理论分析的基础上,采用了一种多采样率计算复合频率信号频谱的方法,该方法在采用高采样率采集样本进行FFT变换频谱预估计的基础上,利用降采样率的方法再进行一次FFT变换频谱分析,然后结合频谱混叠时信号的频域特征利用预估计的频谱信息计算出高分辨率的频谱信息;该方法计算量适中,可以满足实时性要求;利用TI公司的TMS320F28234 DSP作为处理器构建了一个复合频率信号频率计,可以采集输入的复合频率信号并进行多采样率的频谱分析,经测试该频率计可以实时发送复合频率信号的频谱信息到上位机,频率分辨率达到2 Hz。     

微波密闭消解-电感耦合等离子体质谱法测定小鼠血浆中硒的含量北大核心CSCD

移取小鼠血浆样品100μL于消解罐中,加入5mL硝酸与2mL 30%(质量分数)过氧化氢溶液进行微波密闭消解,冷却后,将样品溶液赶酸至少于0.5mL,用水定容至25mL,以73 Ge为内标,选用标准检测模式(STD)。硒的线性范围为0.2~20μg·L^(-1),检出限(3s)为6.75μg·L^(-1)。加标回收率在93.1%~105%之间,测定值的相对标准偏差(n=6)小于5.0%。利用本方法测定补硒小鼠血浆中的硒含量,可观察到硒含量随给药时间而变化。     

概率假设密度滤波的物理空间意义

为了深入理解概率假设密度滤波,本文在Ozgur Erdinc对随机集的物理空间假设的基础上,采用Bayes公式和全概率公式对概率假设密度滤波的迭代过程进行了推导.为有效改善概率假设密度滤波的目标漏检问题提供了理论基础.     

微波密闭消解-电感耦合等离子体质谱法测定小鼠血浆中硒的含量

移取小鼠血浆样品100μL于消解罐中,加入5mL硝酸与2mL 30%(质量分数)过氧化氢溶液进行微波密闭消解,冷却后,将样品溶液赶酸至少于0.5mL,用水定容至25mL,以73 Ge为内标,选用标准检测模式(STD)。硒的线性范围为0.2~20μg·L~(-1),检出限(3s)为6.75μg·L~(-1)。加标回收率在93.1%~105%之间,测定值的相对标准偏差(n=6)小于5.0%。利用本方法测定补硒小鼠血浆中的硒含量,可观察到硒含量随给药时间而变化。     

A novel power UMOSFET with a variable K dielectric layer

A novel split-gate power UMOSFET with a variable K dielectric layer is proposed.This device shows a 36.2% reduction in the specific on-state resistance at a breakdown voltage of 115 V,as compared with the SGE-UMOS device.Numerical simulation results indicate that the proposed device features high performance with an improved figure of merit of Qg × RON and BV2/RON,as compared with the previous power UMOSFET.     

A novel high-voltage light punch-through carrier stored trench bipolar transistor with buried p-layer

A novel high-voltage light punch-through(LPT) carrier stored trench bipolar transistor(CSTBT) with buried p-layer(BP) is proposed in this paper.Since the negative charges in the BP layer modulate the bulk electric field distribution,the electric field peaks both at the junction of the p base/n-type carrier stored(N-CS) layer and the corners of the trench gates are reduced,and new electric field peaks appear at the junction of the BP layer/N drift region.As a result,the overall electric field in the N drift region is enhanced and the proposed structure improves the breakdown voltage(BV) significantly compared with the LPT CSTBT.Furthermore,the proposed structure breaks the limitation of the doping concentration of the N-CS layer(NN CS) to the BV,and hence a higher NN CS can be used for the proposed LPT BP-CSTBT structure and a lower on-state voltage drop(Vce(sat)) can be obtained with almost constant BV.The results show that with a BP layer doping concentration of NBP = 7 × 1015 cm-3,a thickness of LBP = 2.5 μm,and a width of WBP = 5 μm,the BV of the proposed LPT BP-CSTBT increases from 1859 V to 1862 V,with NN CS increasing from 5 × 1015 cm-3 to 2.5 × 1016 cm-3.However,with the same N-drift region thickness of 150 μm and NN CS,the BV of the CSTBT decreases from 1598 V to 247 V.Meanwhile,the Vce(sat) of the proposed LPT BP-CSTBT structure decreases from 1.78 V to 1.45 V with NN CS increasing from 5 × 1015 cm-3 to 2.5 × 1016 cm-3.     

提高星敏感器数据刷新速率技术研究

 星敏感器是星光惯性复合制导技术的关键设备, 其测量周期或数据刷新速率是衡量星敏感器性能的一项重要技术指标。为满足星光惯性复合制导对星敏感器技术指标的要求,分析了构成星敏感器测量周期的主要环节和影响测量周期的主要因素,在此基础上提出了通过合理调度测量过程子任务的技术方法。该方法使数字星空图像捕获过程和处理过程并行执行,进而提高星敏感器数据刷新速率;并重新设计了某型星敏感器电控系统方案。研究表明,采用提出的技术措施后,星敏感器的数据刷新速率获得了显著的提高,其数据刷新速率由3.70 Hz提高到了6.40 Hz,达到了系统提出的要求。     

一种车载筒弹惯导装置不开箱标定方法

随着时间的推移,惯测装置中惯性器件误差参数会发生变化,从而使惯性器件的精度降低,因此必须对惯导装置进行误差补偿。针对筒弹开箱标定工作量大,成本高等问题,本文在车载筒弹状态下,以车的一定机动作为激励方式,设计了一种不开箱标定方法。在分析惯性测量元件误差的基础上,建立了误差输出模型,将理想装置与待测装置的输出量进行比较,利用比较偏差对待测装置进行标定。仿真结果表明,该标定方法能够对误差进行补偿,进而提高惯导系统的导航精度。     

Junction barrier Schottky rectifier with an improved P-well region

<正>A junction barrier Schottky（JBS） rectifier with an improved P-well on 4H-SiC is proposed to improve the V_F-I_R trade-off and the breakdown voltage.The reverse current density of the proposed JBS rectifier at 300 K and 800 V is about 3.3×10^-8 times that of the common JBS rectifier at no expense of the forward voltage drop.This is because the depletion layer thickness in the P-well region at the same reverse voltage is larger than in the P⁺ grid,resulting in a lower spreading current and tunneling current.As a result,the breakdown voltage of the proposed JBS rectifier is over 1.6 kV,that is about 0.8 times more than that of the common JBS rectifier due to the uniform electric field.Although the series resistance of the proposed JBS rectifier is a little larger than that of the common JBS rectifier,the figure of merit（FOM） of the proposed JBS rectifier is about 2.9 times that of the common JBS rectifier.Based on simulating the values of susceptibility of the two JBS rectifiers to electrostatic discharge（ESD） in the human body model（HBM） circuits,the failure energy of the proposed JBS rectifier increases 17%compared with that of the common JBS rectifier.