氧气空心阴极放电模拟

本文利用流体模型对气压为266 Pa的氧气环境下空心阴极放电的放电特性及不同粒子的生成损耗机制进行了模拟研究.模型中包含11种粒子和48个反应.在该模拟条件下,周围阴极所对应的负辉区产生重叠,表明放电中存在较强的空心阴极效应.计算得到了不同带电粒子与活性粒子的密度分布.带电粒子密度主要位于放电单元中心区域,电子和负氧离子O~-是放电体系中主要的负电荷,其密度峰值分别达到5.0×10¹¹ cm^-3和1.6×10¹¹ cm^-3;O₂~+是放电体系中主要的正电荷,其密度峰值为6.5×10¹¹ cm^-3.放电体系中同时存在丰富的活性氧粒子,并且其密度远高于带电粒子,按其密度高低依次为基态氧原子O、单重激发态氧分子O₂(a~1Δ_g)、激发态氧原子O(~1D)、臭氧分子O₃.对电子、O~-和O₂~+的生成和损耗的反应动力学过程进行了深入分析,同时给出了不同活性...     

射频辉光放电CH4等离子体一维流体动力学模拟

完整建立一个关于射频辉光放电CH₄等离子体的流体动力学模型.模型包括基于迁移-扩散近似的粒子平衡方程、电子能量平衡方程,共包含了20种粒子(环境气体粒子,激发态粒子,离子和电子)和49类化学反应(电子-中性环境粒子、离子-中性环境粒子、激发态粒子-激发态粒子(中性环境粒子)).结果表明,在强电场区域有较高的电子反应率系数;等离子体中除源气体CH₄外,H₂,C₂H₆,C₃H₈,C₂H₄和C₂H₂也有较高的密度含量;激发态粒子中,CH₃含量最高,密度约为10¹⁹m^-3;在较低放电压力时(如18 Pa),CH₅⁺在离子成分中密度含量最高,当放电压力较高时(如67Pa),C₂H₅⁺在离子成分中占主导地位;除C₂H₅⁺外,其它各离子和激发态粒子在极板上的粒子流量随功率的增大逐渐升高.     

等离子体金属表面氮化中放电温度对氮原子态粒子的影响

采用快电子和重粒子(N₂⁺,N⁺,N_f)混合的Monte Carlo模型,研究了氮直流辉光放电等离子体金属表面氮化过程中.e-N_2s及N₂⁺-N_2s两种碰撞离解过程产生的原子态粒子(N⁺,N)的产生率和氮化粒子(N⁺,N_f)轰击靶表面的能量、粒子数密度及入射角分布随气体温度的变化规律.结果表明,使阴极靶处活性粒子(N⁺,N_f)的能量高且粒子数密度大,存在一个最佳放电温度;粒子(N⁺,N)的产生率及在靶表面的密度数都随着放电气体温度的升高而减少;有大量中性快原子N_f在工件表面小角入射,且粒子(N⁺,N_f)角分布受温度的影响很小.     

空气介质阻挡放电发射光谱测量及放电过程粒子分析

发射光谱是对等离子体进行检测和诊断最常见的应用方法,提供了等离子体的化学和物理过程丰富的信息,放电过程中等离子的动力学行为的分析研究对于气体放电机理及其应用具有重要的作用。设计了一套介质阻挡空气放电光谱测量装置,测量了在实验条件下的发射光谱数据,通过发射光谱分析了介质阻挡放电等离子体的粒子演化。建立了数值计算模型,耦合了密度方程、能量传递方程以及Boltzmann方程,对于介质阻挡空气放电过程中的各种粒子变化规律进行了分析,解释了发射光谱的特征。结果表明,约化场强越大,激发的粒子数的浓度越大。对于40,60与80 Td的约化场强,同一时刻同种粒子数的浓度会有一到两个数量级的差距。电场的激发产生了大量的N₂(A3),N₂(B3)与N₂(C3)的粒子,但是由于其能级较高,而迅速发生了转化,并且在放电的10-6 s后,这些粒子的产生与转化达到了平衡。相比激发态氮分子,O₂(A1) O₂(B1)与O₂(A3Σ+_u)的峰值浓度并不低,这些粒子的能量相对较低,跃迁产生的谱线波长较长,光谱仪并未清晰捕捉到氧分子的发射光谱。O粒子的峰值浓度较小,因此其跃迁产生的发射光谱较弱。放电过程中产生的较为稳定的O₃浓度持续增加,NO₂的浓度达到峰值后也不会下降。建立的模型计算结果可以很好地解释实验中测量得到的发射光谱数据。     

用能量自洽法研究碱金属双原子分子的势能曲线

用能量自洽法(ECM)研究了碱金属双原子分子一些电子激发态的势能曲线：Na₂ 分子的2¹Π_g,4³Π_g和b³Π< sub>u电子激发态,K₂分子的a³Σ^＋_{u,2¹Πg,B¹Πu和A^{关键词： 能量自洽 双原子分子 势能 碱金属}}     

宏观放电参数对快原子态氮(N+,Nf)的影响

采用氮直流辉光放电等离子体中快电子和重粒子(N₂⁺,N⁺,N_f)混合的蒙特卡罗方法,模拟研究了快原子态粒子(N⁺,N_f)的产生率及轰击阴极的能量分布随宏观放电参数(P,V)的变化规律.结果表明,存在一最佳放电条件,使阴极壁处粒子(N⁺,N_f)的粒子数密度大且能量高;当电压大于800V时,轰击阴极的活性粒子(N⁺,N_f),主要由N₂⁺-N₂离解过程产生,电压小于300V时,主要由e^--N₂离解过程产生,模拟结果与实验结果相符合.     

MgⅪ 1s3p-1s4p能级间平均高温及高密度条件下的粒子数反转

采用最新设计带侧向喷口的微管靶,当微管内壁平均激光辐照强度约为3.5×10¹³W·cm^-2时,观察到沿整个喷口1s3p ¹P₀⁰和1s4p ¹P₀⁰能级间强烈的粒子数反转。测得相应环境等离子体平均电子温度470—520eV,密度约为2×10²⁰cm^-3。分析了可能导致高温条件下粒子数反转的机制。 关键词：     

弱电离大气等离子体电子碰撞能量损失的理论研究

在前期计算电子能量分布函数的基础上, 求出弱电离大气等离子体中各碰撞反应过程的电子能量损失. 由于在弹性碰撞中电子-重粒子能量交换很少, 同时氮气、氧气分子又有很多能量阈值较低的转动、振动能级存在, 因此在大气等离子体中弹性碰撞电子能量损失所占份额很小(直流电场下小于6%). 研究发现, 弱电离大气等离子体中在不同能量区间占主导的能量损失过程不同. 随着有效电子温度(或约化场强)增加, 占主导的电子能量损失过程依次为转动激发、振动激发、电子态激发、碰撞电离、加速电离产生的二次电子. 在约化场强E/N=1350 Td (或有效电子温度为14 eV)附近, 平均电离一个电子所需的能量最小, 约为57 eV. 因此可以根据不同的需求调节电场强度, 从而达到较高的能量利用率. 关键词： 弱电离大气等离子体 碰撞反应过程 电子能量损失     

NO分子b~4Σ~-—a~4Π_i(4,0)带的吸收光谱

通过对NO与He流动混合气体放电,产生了激发态的NO(a⁴Ⅱ_ii)分子.利用光外差-浓度调制吸收光谱技术测量了NO分子在12530-12850 cm^-1波段内的吸收光谱,并标识出b⁴∑^--a⁴Ⅱ_i（4,0）带在该波段内的324条跃迁谱线.采用标准⁴∑^-—⁴Ⅱ_i哈密顿量模型,通过非线性最小二乘法拟合其中267条谱线,拟合残差(0.0071 cm^-1)接近实验系统测量误差(0.007 cm^-1).获得的主要分子常数与文献提供的常数符合,并且拟合得到了精细结构分子常数.     

CH4或CH4+Ar介质阻挡放电中的离子能量和类金刚石膜制备

实验上，利用纯CH₄及CH₄+Ar在几百帕量级气压下的介质阻挡放电 制备类金刚石膜，研究了气压p与放电间隙d乘积(pd值)以及Ar的体积百分比R_Ar 对膜硬度的影响.理论上，从离子与气体分子的双体碰撞出发，利用较高折合电场强度E/n( 电场强度与粒子数密度之比)下离子及中性粒子速度分布的双温模型、离子在其他气体中运 动时遵守的朗之万方程及离子在混合气体中运动时遵守的布兰克法则，对CH⁺4和Ar⁺离子能量进行了分析.结果表明：1)CH₄介质阻挡 放电中，pd值由1.862×10³Pa mm降低至2.66×10²Pa mm时，CH+₄能量由5.4eV增加到163eV，类金刚石膜硬度由2.1GPa提高到17.6GPa ; 2) 保持总气压p=100Pa,放电间距d=5mm不变，在CH₄中加入Ar气，当R_Ar 由20％增加至83%时，CH⁺₄的能量由69eV增加到92eV,而Ar＋能量由93eV降低至72eV.虽然CH⁺₄能量增加有助于提高 沉积膜硬度，但当R_Ar大于67%，高强度Ar⁺轰击会导致膜表面石墨 化，膜硬度降低.为了验证离子能量理论模型的正确性，实验测量了H₂介质阻挡 放电中离子能量，测量结果与理论计算之间最大相对误差为16%. 关键词： 离子能量 介质阻挡放电 类金刚石膜     

CHCl3电子吸附速率常数的离子迁移谱

利用电晕放电离子迁移谱, 使用高纯氮气作为载气和迁移气体, 研究了电场强度在200～500 V/cm变化时CHCl₃的解离电子吸附速率常数, 得到样品所对应的电子吸附速率常数为1.26×10^-8～8.24×10^-9 cm³/(molecules s)．利用该装置测量了固定电场下,样品的电子吸附速率常数与样品浓度之间的关系．此外利用所获得的离子迁移谱图得到了不同电场强度下Cl^-与CHCl₃之间的离子分子反应速率常数.     

Shubnikov-de haas effect in n-CdSnAs2

Shubnikov-de Haas oscillations in the transverse magnetoresistance of single-crystalline n-type CdSnAs₂ have been recorded at temperatures between 2 and 25 K in magnetic fields up to 5T. The electron concentration of the samples ranged from 2 × 10¹⁷ to 2 × 10¹⁸ cm^?3. The angular dependences of the oscillation periods and cyclotron effective masses showed that the conduction band exhibits an energy dependent anisotropy, obeying the Kildal band structure model. For the low-temperature values of the band parameters we found: a band gap E_g = 0.30 eV, a spin-orbit splitting Δ = 0.50 eV, a crystal field splitting parameter δ = ?0.09 eV, and an interband matrix element P = 8.5 × 10^?8eV cm. This simple four-level model was found to be not adequate to describe quantitatively the observed electronic effective g-factor for a sample with low electron concentration.     

电子对Cl2的离解附着

在电子平均能量为3—5电子伏的范围内,测定了Ar/Cl₂混合物中,电子对Cl₂的离解附着速率常数。结果表明,电子平均能量为3.5电子伏时,离解附着速率常数为(3.2±0.4)×10^-10厘米³/秒,并考察了速率常数与电子平均能量的关系。这些实验结果与最近Los Alamos国家实验室研究者们的类似工作的结果是一致的。 关键词：     

Cross sections for slow ion production and charge transfer in H+3(D+3)−H2(D2) collisions

Slow ion production cross sections for collisions of H⁺₃ and D⁺₃ ions with H₂ and D₂ have been measured at collision energies between 100 eV and 500 eV. The values vary from 2 × 10^-17 cm² to 6 × 10^-17 cm². The smaller cross sections for D₃ projectiles may be explained as an internal energy effect.     

Proton-induced F-centers in LiF and MgF2

The growth of F-centers in LiF irradiated at room temperature with 40- and 85-MeV protons and with ⁹⁰Sr electrons was found to be proportional to the square root of the absorbed energy over the range 0.5 to 2.3 Mrad which corresponds to an F-center density range of 1 × 10¹⁶ to 1.5 × 10¹⁷ per cm³. The production efficiency was 5 × 10³eV per F-center at an absorbed energy of 2.3 Mrad. The density of F-centers produced in MgF₂ by 40- and 85-MeV protons was measured over an absorbed energy range of 0.2 to 29 Mrad which corresponds to a maximum F-center density of 2 × 10¹⁶ per cm³. The production efficiency for MgF₂ was 4 × 10⁵eV per F-center at an absorbed energy of 16 Mrad.     

Absolute cross sections of electron attachment to molecular clusters. Part II: Formation of (H2O) N? , (N2O) N? , and (N2) N?

Absolute cross sections σ⁻(E, N) of electron attachment to clusters (H₂O) _N , (N₂O) _N , and (N₂) _N for varying electron energy E and cluster size N are measured by using crossed electron and cluster beams in a vacuum. Continua of σ⁻(E) are found that correlate well with the functions of electron impact excitation of molecules’ internal degrees of freedom. The electron is attached through its solvation in a cluster. In the formation of (H₂O) _N ⁻ , (N₂O) _N ⁻ , and (N₂) _N ⁻ , the curves σ⁻(N) have a well-defined threshold because of a rise in the electron thermalization and solvation probability with N. For (H₂O)₉₀₀, (N₂O)₃₅₀, and (N₂)₂₆₀ clusters at E = 0.2 eV, the energy losses by the slow electron in the cluster are estimated as 3.0 × 10⁷, 2.7 × 10⁷, and 6.0 × 10⁵ eV/m, respectively. It is found that the growth of σ⁻ with N is the fastest for (H₂O) _N and (N₂) _N clusters at E → 0 as a result of polarization capture of the s-electron. Specifically, at E = 0.1 eV and N = 260, σ⁻ = 3.0 × 10⁻¹³ cm² for H₂O clusters, 8.0 × 10⁻¹⁴ cm² for N₂O clusters, and 1.4 × 10⁻¹⁵ cm² for N₂ clusters; at E = 11 eV, σ⁻ = 9.0 × 10⁻¹⁶ cm² for (H₂O)₂₀₀ clusters, 2.4 × 10⁻¹⁴ cm² for (N₂O)₃₅₀ clusters, and 5.0 × 10⁻¹⁷ cm² for (N₂)₂₆₀ clusters; finally, at E = 30 eV, σ⁻ = 3.6 × 10⁻¹⁷ cm² for (N₂O)₁₀ clusters and 3.0 × 10⁻¹⁷ cm² for (N₂)₁₂₅ clusters. Original Russian Text ? A.A. Vostrikov, D.Yu. Dubov, 2006, published in Zhurnal Tekhnicheskoĭ Fiziki, 2006, Vol. 76, No. 12, pp. 1–15.     

用MOS方法研究四元混晶In0.75Ga0.25As0.58P0.42中的深能级中心

采用MOS方法,在液相外延生长的n型In_0.75Ga_0.25As_0.58P_0.42混晶中,我们测出了两个位于导带下面0.20eV和0.48eV处的电子陷阱,对电子的俘获截面分别为1.4×10^-16cm²和3.8×10^-12cm²。关于采用MOS方式研究具有多层结构的化合物半导体材料的DLITS问题,本文也进行了讨论。 关键词：     

Ne(I) spectral lines from a Ne-O2 d.c. glow discharge

Measurements have been made of intensities of the spectral lines emitted from an Ne-O₂ d.c. discharge with small discharge current (1–4 mA) under the following conditions: gas pressures of 2 and 3 torr and oxygen partial pressures (P₀₂) up to 0.1 torr. All of the Ne(I) line intensities observed decrease when O₂ is added. The Ne(I) λ5852 line (1s₂-2p₁) has been studied in detail as a representative example. The population density of the 2p₁ level of neon has been obtained from the intensity measurements as a function of P₀₂. The energy-distribution function of electrons has been determined using Druyvesteyn's method in order to calculate the population density for a corona model. The high-energy tail of the measured distribution function is markedly reduced when O₂ is added. It is shown that inelastic collisions of electrons with O₂ produce large energy losses for the electrons. These cause a decrease in population density of the 2p₁ level when O₂ is added. The population density of the 2p₁ level at a gas pressure of 2 torr is 1.2×10⁴ cm^-3 in pure neon and 5.2×10² cm^-3 in an Ne-O₂ mixture (P₀₂ = 0.01 torr). The electron densities and average electron energies are 3.5×10⁸ cm^-3 and 8.7 eV and 1.7×10⁸ cm^-3 and 5.3 eV, respectively, for the specified two cases.     

Kinetic parameters,collision rates,energy exchanges and transport coefficients of non-thermal electrons in premixed flames at sub-breakdown electric field strengths

The effects of an electric field on the collision rates, energy exchanges and transport properties of electrons in premixed flames are investigated via solutions to the Boltzmann kinetic equation. The case of high electric field strength, which results in high-energy, non-thermal electrons, is analysed in detail at sub-breakdown conditions. The rates of inelastic collisions and the energy exchange between electrons and neutrals in the reaction zone of the flame are characterised quantitatively. The analysis includes attachment, ionisation, impact dissociation, and vibrational and electronic excitation processes. Our results suggest that Townsend breakdown occurs for E/N = 140 Td. Vibrational excitation is the dominant process up to breakdown, despite important rates of electronic excitation of CO, CO₂ and N₂ as well as impact dissociation of O₂ being apparent from 50 Td onwards. Ohmic heating in the reaction zone is found to be negligible (less than 2% of peak heat release rate) up to breakdown field strengths for realistic electron densities equal to 10¹⁰ cm^?3. The observed trends are largely independent of equivalence ratio. In the non-thermal regime, electron transport coefficients are insensitive to mixture composition and approximately constant across the flame, but are highly dependent on the electric field strength. In the thermal limit, kinetic parameters and transport coefficients vary substantially across the flame due to the spatially inhomogeneous concentration of water vapour. A practical approach for identifying the plasma regime (thermal versus non-thermal) in studies of electric field effects on flames is proposed.     

Thermally quenched and generated paramagnetism in Ge42S58 glass

Two kinds of paramagnetic defects whose density increases and decreases with temperature have been observed in Ge₄₂S₅₈ glass using ESR technique. The increasing and decreasing defects are interpreted as resulting from Ge dangling bonds with negative and positive effective electron correlation energies, respectively. Unlike usual amorphous semiconductors, Ge₄₂S₅₈ glass contains defects with the effective electron correlation energy whose value ranges from positive to negative depending on environment around the defect. The densities of the defects with the positive and negative values are about 4 × 10¹⁵ and 3 × 10¹⁷ cm^?3 respectively.