含集中质量悬臂输流管的稳定性与模态演化特性研究

本文主要研究通过调控集中质量对悬臂输流管稳定性和振动模态特性的影响规律,为输流管动力学性能的可控性提供理论指导和实验依据. 首先基于扩展的哈密顿原理,建立了含集中质量悬臂输流管的非线性动力学理论模型. 基于线性动力学特性分析,研究发现集中质量沿管道轴向位置变化对输流管发生颤振失稳的临界流速有重要影响.并通过伽辽金前四阶模态截断处理线性矩阵方程式,定性地分析了集中质量位置与质量比的变化对于输流管稳定性影响的变化.实验结果表明, 输流管的颤振失稳模态随集中质量位置的变化发生了转迁. 此外,基于动力学理论分析, 发现集中质量比值对失稳临界流速也有重要的影响,且主要取决于集中质量的安装位置. 基于非线性特性,进一步分析了集中质量对输流管振动幅值的影响. 实验和理论研究发现,集中质量位置从固定端向自由端变化时, 输流管振幅表现出先增大后减小趋势,且振动模态也从二阶转迁到三阶.本研究有望为输流管振动驱动应用提供理论支撑与指导意义.      

基于"以学生为中心"理念的有机化学互动教学

探索了有机化学课程讲授过程中以学生为中心的互动教学模式,从人名反应学生自主授课设计思路及发展过程、学生授课评价体系、学生答疑团队及答疑qq群的建立等3个方面介绍了互动教学模式的设计方式及优势。结果表明,该教学方法除了可以提升学生学习兴趣及成绩,对学生综合能力和素质的提升也具有积极的作用。     

冷等离子体在聚合物化学中的应用

等离子体化学是等离子体技术与化学相互渗透结合而产生的一门新兴学科.借助等离子体中的能量粒子和活性成份所产生的物理和化学过程、引发单体聚合、处理固体表面和沉积薄膜,从而获取新材料和开发老材料,是近十多年来引入注目的方面.也是等离子体化学的主要组成部分--聚合物化学.     

Ultra-low specific on-resistance high-voltage vertical double diffusion metal–oxide–semiconductor field-effect transistor with continuous electron accumulation layer

A new ultra-low specific on-resistance(Ron,sp) vertical double diffusion metal–oxide–semiconductor field-effect transistor(VDMOS) with continuous electron accumulation(CEA) layer, denoted as CEA-VDMOS, is proposed and its new current transport mechanism is investigated. It features a trench gate directly extended to the drain, which includes two PN junctions. In on-state, the electron accumulation layers are formed along the sides of the extended gate and introduce two continuous low-resistance current paths from the source to the drain in a cell pitch. This mechanism not only dramatically reduces the Ron,sp but also makes the Ron,sp almost independent of the n-pillar doping concentration(Nn). In off-state, the depletion between the n-pillar and p-pillar within the extended trench gate increases the Nn, and further reduces the Ron,sp.Especially, the two PN junctions within the trench gate support a high gate–drain voltage in the off-state and on-state, respectively. However, the extended gate increases the gate capacitance and thus weakens the dynamic performance to some extent. Therefore, the CEA-VDMOS is more suitable for low and medium frequencies application. Simulation indicates that the CEA-VDMOS reduces the Ron,sp by 80% compared with the conventional super-junction VDMOS(CSJ-VDMOS)at the same high breakdown voltage(BV).     

打磨参数对钢轨打磨磨石磨损与材料去除影响研究

为研究打磨参数对钢轨打磨磨石磨损的影响,利用SOLIDWORKS三维软件建立了钢轨打磨模型,在DEFORM-3D有限元软件中设置相应的仿真参数,仿真分析了打磨转速、进给速度及打磨深度对打磨磨石磨损的影响,研究了钢轨材料去除量随打磨参数的变化情况.结果表明:打磨磨石磨损量随打磨距离近似呈线性增长趋势;打磨磨石磨损量随打磨转速和打磨深度的增加而增加,随进给速度的增加而减小;钢轨材料打磨去除量变化趋势同打磨磨石的磨损量相一致,而且二者的变化原因也是相辅相成的.研究结果为现场钢轨打磨参数优化提供了重要的理论依据.     

等离子体化学

等离子体化学是六十年代等离子体技术应用于化学领域而形成的一门新兴交叉学科。它建立在放电物理、放电化学、反应工程学和真空技术等基础学科之上,主要研究等离子体中化学反应原理、过程、产物结     

激光三角法测量中被测物表面特性对测量精度影响的分析

激光三角法测量是现代测量技术中重要的测量方法,但其测量精度受自身系统、环境以及被测物表面特征等因素的影响。针对被测表面的特性是激光三角法产生测量中产生测量误差的主要因素,根据特定颜色所造成误差的重复特性提出了数据标定的改进方法;针对表面粗糙度,通过在光路适当位置安装偏振片有效消除了镜面反射,采用双光路设计有效改善了被测物倾斜带来的误差。最后通过实验验证了改进方法的有效性。     

A low on-resistance buried current path SOI p-channel LDMOS compatible with n-channel LDMOS

A novel low specific on-resistance(R on,sp) silicon-on-insulator(SOI) p-channel lateral double-diffused metal-oxide semiconductor(pLDMOS) compatible with high voltage(HV) n-channel LDMOS(nLDMOS) is proposed.The pLDMOS is built in the N-type SOI layer with a buried P-type layer acting as a current conduction path in the on-state(BP SOI pLDMOS).Its superior compatibility with the HV nLDMOS and low voltage(LV) complementary metal-oxide semiconductor(CMOS) circuitry which are formed on the N-SOI layer can be obtained.In the off-state the P-buried layer built in the NSOI layer causes multiple depletion and electric field reshaping,leading to an enhanced(reduced) surface field(RESURF) effect.The proposed BP SOI pLDMOS achieves not only an improved breakdown voltage(BV) but also a significantly reduced Ron,sp.The BV of the BP SOI pLDMOS increases to 319 V from 215 V of the conventional SOI pLDMOS at the same half cell pitch of 25 μm,and R on,sp decreases from 157 mΩ·cm2 to 55 mΩ·cm2.Compared with the PW SOI pLDMOS,the BP SOI pLDMOS also reduces the R on,sp by 34% with almost the same BV.     

A low specific on-resistance SOI MOSFET with dual gates and a recessed drain

A low specific on-resistance(Ron,sp) integrable silicon-on-insulator(SOI) metal-oxide semiconductor field-effect transistor(MOSFET) is proposed and investigated by simulation.The MOSFET features a recessed drain as well as dual gates,which consist of a planar gate and a trench gate extended to the buried oxide layer(BOX)(DGRD MOSFET).First,the dual gates form dual conduction channels,and the extended trench gate also acts as a field plate to improve the electric field distribution.Second,the combination of the trench gate and the recessed drain widens the vertical conduction area and shortens the current path.Third,the P-type top layer not only enhances the drift doping concentration but also modulates the surface electric field distributions.All of these sharply reduce Ron,sp and maintain a high breakdown voltage(BV).The BV of 233 V and Ron,sp of 4.151 mΩ·cm2(VGS = 15 V) are obtained for the DGRD MOSFET with 15-μm half-cell pitch.Compared with the trench gate SOI MOSFET and the conventional MOSFET,Ron,sp of the DGRD MOSFET decreases by 36% and 33% with the same BV,respectively.The trench gate extended to the BOX synchronously acts as a dielectric isolation trench,simplifying the fabrication processes.     

低环境温度空气源热泵机组IPLV(H)测量不确定度的理论分析与试验研究

一切测量结果均有不确定度。本文通过探讨低环境温度空气源热泵机组IPLV(H)的测量原理,建立其测量不确定度的数学模型。通过理论分析与试验研究发现,各负荷测量的A类不确定度远小于对应负荷测量的B类不确定度,按照对B类不确定度的影响,各测量分量从大到小进行排序为流量、进出水温度、功率。因此,可通过提高相应仪表的精度,定期检定与校准来提高测量系统的精度,进而降低测量不确定。