| 电子束在VO2薄膜中引起的价态、相结构和光学性能的改变 |
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| 引用本文： | 卢勇,林理彬,卢铁城,甘荣兵,何捷.电子束在VO2薄膜中引起的价态、相结构和光学性能的改变[J].强激光与粒子束,2001,13(6):706-710. |
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| 作者姓名： | 卢勇 林理彬 卢铁城 甘荣兵 何捷 |
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| 作者单位： | 四川大学 物理系， 教育部辐射物理及技术重点实验室， 四川 成都 610064 |
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| 基金项目： | 国家自然科学基金资助课题(19928510) |
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| 摘 要： | 利用能量为1.7MeV, 注量分别为1.25×1013/cm2, 1.25×1014/cm2, 1.25×1015/cm2的电子束辐照VO2薄膜，采用XPS, XRD等测试手段对电子辐照前后的样品进行分析，并研究了电子辐照对样品相变过程中光透射特性的影响。结果表明电子辐照引起VO2薄膜中V离子出现价态变化现象，并使薄膜的X射线衍射峰发生变化。电子辐照在样品中产生的这些变化显著改变了VO2薄膜的热致相变光学特性。
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| 关 键 词： | VO2薄膜 变价 相结构 相变性能 电子辐照 |
| 文章编号： | 1001-4322(2001)06-0706-05 |
| 收稿时间： | 2001/5/15 |
| 修稿时间： | 2001年5月15日 |
Variations of valence state, phase-structure and optic properties of VO2
thin films induced by electron irradiation |
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| lu yong,lin li-bin,lu tie-cheng,gan rong-bing,he jie.Variations of valence state, phase-structure and optic properties of VO2
thin films induced by electron irradiation[J].High Power Laser and Particle Beams,2001,13(6):706-710. |
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| Authors: | lu yong lin li-bin lu tie-cheng gan rong-bing he jie |
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| Institution: | Department of Physics, Sichuan University, Key Laboratory of Irradiati on Physics and Technology for Ministry of Education, Chengdu 610064, China |
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| Abstract: | Vanadium dioxide thin films have been irradiated by electron beam with energy of 1.7MeV and fluence of 1.25×10 13 /cm 2,1.25×10 14 /cm 2,1.25×10 15 /cm 2 respectively.Structure and V ion valence of the films have been studied by X-ray diffraction and X-ray photoelectron spectroscopy before and after electron irradiation,and their phase-transition properties have been characterized by optical transmittance analysis methods.The results show that the valence variation of V ion and the changes of XRD patterns of the irradiated samples have been detected,and the optical properties during phase-transition process have been changed obviously by electron irradiation. |
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| Keywords: | VO2 thin film valence variation phase structure phase-transition properties electron irradiation |
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