Electro–magnetic control of shear flow over a cylinder for drag reduction and lift enhancement

In this paper, the electro-magnetic control of a cylinder wake in shear flow is investigated numerically. The effects of the shear rate and Lorentz force on the cylinder wake, the distribution of hydrodynamic force, and the drag/lift phase diagram are discussed in detail. It is revealed that Lorentz force can be classified into the field Lorentz force and the wall Lorentz force and they affect the drag and lift forces independently. The drag/lift phase diagram with a shape of ＂8＂ consists of two closed curves, which correspond to the halves of the shedding cycle dominated by the upper and lower vortices respectively. The free stream shear （K 〉 0） induces the diagram to move downward and leftward, so that the average lift force directs toward the downside. With the upper Lorentz force, the diagram moves downwards and to the right by the field Lorentz force, thus resulting in the drag increase and the lift reduction, whereas it moves upward and to the left by the wall Lorentz force, leading to the drag reduction and the lift increase. Finally the diagram is dominated by the wall Lorentz force, thus moving upward and leftward. Therefore the upper Lorentz force, which enhances the lift force, can be used to overcome the lift loss due to the free stream shear, which is also obtained in the experiment.     

Analytical investigation velocity fields on mean and turbulent of a plane jet

This paper analyses the downstream developments of the mean and the turbulent velocity fields of a plane jet. Based on the conservation of mass and the conservation of momentum, the mean-velocity half width （reflecting the jet spread rate） and the relative mass flow rate （jet entrainment） are related to the decay rate of the centreline mean velocity. These relations are not subject to self-preservation. Both analytical and experimental results suggest that the jet spread rate （K1） and the entrainment rate （K3） （and thus the decay rate K2） can be well estimated from the centreline velocity, i.e., K1 ≈ 0.6K2 and K3 ∝K2. The effect of initial mean velocity and RMS velocity profiles on the downstream mean velocity field appears to be embodied in the constants K1 K2 and K3. The analytical relationship for the self-preserving Reynolds shear stress, obtained for the first time, works well.     

Partial-SOI high voltage laterally double-diffused MOS with a partially buried n~+-layer

A novel partial silicon-on-insulator laterally double-diffused metal-oxide-semiconductor transistor （PSOI LDMOS） with a thin buried oxide layer is proposed in this paper. The key structure feature of the device is an n＋-layer, which is partially buried on the bottom interface of the top silicon layer （PBNL PSOI LDMOS）. The undepleted interface n＋-layer leads to plenty of positive charges accumulated on the interface, which will modulate the distributions of the lateral and vertical electric fields for the device, resulting in a high breakdown voltage （BV）. With the same thickness values of the top silicon layer （10 p.m） and buried oxide layer （0.375 μm）, the BV of the PBNL PSOI LDMOS increases to 432 V from 285 V of the conventional PSOI LDMOS, which is improved by 51.6%.     

Impact of substrate injected hot electrons on hot carrier degradation in a 180-nm NMOSFET

Although hot carriers induced degradation of NMOSFETs has been studied for decades, the role of hot electron in this process is still debated. In this paper, the additional substrate hot electrons have been intentionally injected into the oxide layer to analyze tile role of hot electron in hot carrier degradation. The enhanced degradation and the decreased time exponent appear with the injected hot electrons increasing, the degradation increases from 21.80% to 62.00% and the time exponent decreases from 0.59 to 0.27 with Vb decreasing from 0 V to -4 V, at the same time, the recovery also becomes remarkable and which strongly depends on the post stress gate bias Vg. Based on the experimental results, more unrecovered interface traps are created by the additional injected hot electron from the breaking Si-H bond, but the oxide trapped negative charges do not increase after a rapid recovery.     

Shear viscosity of aluminum studied by shock compression considering elasto-plastic effects

The strength always exists before the material melts. In this paper, the viscoelastic-plastic model is applied to improve the finite difference method, and the numerical solutions for the disturbance amplitude damping behavior of the sinusoidal shock front in a flyer-impact experiment are obtained. When the aluminum is shocked to 101 GPa, the effect of elastoplasticity on the zero-amplitude point of the oscillatory damping curve is the same as that of viscosity when η = 700 Pa·s,and the real shear viscosity coefficient of the shocked aluminum is determined to be about 2800±100 Pa·s. Comparing the experiment data with the numerical results of the viscoelastic-plastic model, we find that the aluminum is close to melting at 101 GPa.     

The structural,elastic, and electronic properties of ZrxNbl-xC alloys from first principle calculations＊

The structural, elastic, electronic, and thermodynamic properties of ZrxNbl xC alloys are investigated using the first principles method based on the density functional theory. The results show that the structural properties of Zr~.Nb1 xC alloys vary continuously with the increase of Zr composition. The alloy possesses both the highest shear modulus （215 GPa） and a higher bulk modulus （294 GPa）, with a Zr composition of 0.21. Meanwhile, the Zr0.2! Nb0.79C alloy shows metallic conductivity based on the analysis of the density of states. In addition, the thermodynamic stability of the designed alloys is estimated using the calculated enthalpy of mixing.     

Synergistic effects of total ionizing dose on single event upset sensitivity in static random access memory under proton irradiation

Nitrogen plasma passivation （NPP） on （111） germanium （Ge） was studied in terms of the interface trap density, roughness, and interfacial layer thickness using plasma-enhanced chemical vapor deposition （PECVD）. The results show that NPP not only reduces the interface states, but also improves the surface roughness of Ge, which is beneficial for suppressing the channel scattering at both low and high field regions of Ge MOSFETs. However, the interracial layer thickness is also increased by the NPP treatment, which will impact the equivalent oxide thickness （EOT） scaling and thus degrade the device performance gain from the improvement of the surface morphology and the interface passivation. To obtain better device performance of Ge MOSFETs, suppressing the interfacial layer regrowth as well as a trade-off with reducing the interface states and roughness should be considered carefully when using the NPP process.     

Dye-sensitized solar cells: Atomic scale investigation of interface structure and dynamics

Recent progress in dye-sensitized solar cells(DSC) research is reviewed, focusing on atomic-scale investigations of the interface electronic structures and dynamical processes, including the structure of dye adsorption onto TiO2, ultrafast electron injection, hot-electron injection, multiple-exciton generation, and electron–hole recombination. Advanced experimental techniques and theoretical approaches are briefly summarized, and then progressive achievements in photovoltaic device optimization based on insights from atomic scale investigations are introduced. Finally, some challenges and opportunities for further improvement of dye solar cells are presented.     

Mechanical properties of jammed packings of frictionless spheres under an applied shear stress

By minimizing a thermodynamic-like potential, we unbiasedly sample the potential energy landscape of soft and frictionless spheres under a constant shear stress. We obtain zero-temperature jammed states under desired shear stresses and investigate their mechanical properties as a function of the shear stress. As a comparison, we also obtain the jammed states from the quasistatic-shear sampling in which the shear stress is not well-controlled. Although the yield stresses determined by both samplings show the same power-law scaling with the compression from the jamming transition point J at zero temperature and shear stress, for finite size systems the quasistatic-shear sampling leads to a lower yield stress and a higher critical volume fraction at point J. The shear modulus of the jammed solids decreases with increasing shear stress. However, the shear modulus does not decay to zero at yielding. This discontinuous change of the shear modulus implies the discontinuous nature of the unjamming transition under nonzero shear stress, which is further verified by the observation of a discontinuous jump in the pressure from the jammed solids to the shear flows. The pressure jump decreases upon decompression and approaches zero at the critical-like point J, in analogy with the well-known phase transitions under an external field. The analysis of the force networks in the jammed solids reveals that the force distribution is more sensitive to the increase of the shear stress near point J. The force network anisotropy increases with increasing shear stress. The weak particle contacts near the average force and under large shear stresses it exhibit an asymmetric angle distribution.     

Novel high-voltage self-adaptive power device based on interface charge＊

This paper presents a novel high-voltage lateral double diffused metal-oxide semiconductor （LDMOS） with self- adaptive interface charge （SAC） layer and its physical model of the vertical interface electric field. The SAC can be self-adaptive to collect high concentration dynamic inversion holes, which effectively enhance the electric field of dielectric buried layer （EI） and increase breakdown voltage （BV）. The BV and EI of SAC LDMOS increase to 612 V and 600 V/tim from 204 V and 90.7 V/ttm of the conventional silicon-on-insulator, respectively. Moreover, enhancement factors of r/which present the enhanced ability of interface charge on EI are defined and analysed.     

Shear Viscosity of Hot QED at Finite Chemical Potential from Kubo Formula

Within the framework of finite temperature field theory this paper discusses the shear viscosity of hot QED plasma through Kubo formula at one-loop skeleton diagram level with a finite chemical potential. The effective widths （damping rates） are introduced to regulate the pinch singularities and then gives a reliable estimation of the shear viscous coefficient. The finite chemical potential contributes positively compared to the pure temperature case. The result agrees with that from the kinetics theory qualitatively.     

Effects of interface roughness on photoluminescence full width at half maximum in GaN/AIGaN quantum wells

Low temperature photoluminescence （PL） measurements have been performed for a set of GaN/AlxGal xN quantum wells （QWs）. The experimental results show that the optical full width at half maximum （FWHM） increases relatively rapidly with increasing A1 composition in the AlxGal xN barrier, and increases only slightly with increasing GaN well width. A model considering the interface roughness is used to interpret the experimental results. In the model, the FWHM＇s broadening caused by the interface roughness is calculated based on the triangle potential well approximation. We find that the calculated results accord with the experimental results well.     

Enhanced ferroelectricity and ferromagnetism in Bio.9Bao. 1FeO3/Laz/3Srl/3MnO3 heterostructure grown by pulsed laser deposition

Bi0.9Ba0.lFeO3 （BBFO）/La2/3Srl/3MnO3 （LSMO） heterostructures are fabricated on LaA103 （100） substrates by pulsed laser deposition. Giant remnant polarization value （~ 85 μC/cm2） and large saturated magnetization value （~ 12.4 emu/cm3） for BBFO/LSMO heterostructures are demonstrated at room temperature. Mixed ferroelectric domain structures and low leakage current are observed and in favor of enhanced ferroelectrie properties in the BBFO/LSMO het- erostructures. The magnetic field-dependent magnetization measurements reveal the enhancement in the magnetic moment and improved magnetic hysteresis loop originating from the BBFO/LSMO interface. The heterostructure is proved to be effective in enhancing the ferroelectric and ferromagnetic performances in multiferroic BFO films at room temperature.     

Influence of roughness on the detection of mechanical characteristics of low-k film by the surface acoustic waves

The surface acoustic wave （SAW） technique is a precise and nondestructive method to detect the mechanical charac- teristics of the thin low dielectric constant （low-k） film by matching the theoretical dispersion curve with the experimental dispersion curve. In this paper, the influence of sample roughness on the precision of SAW mechanical detection is inves- tigated in detail. Random roughness values at the surface of low-k film and at the interface between this low-k film and the substrate are obtained by the Monte Carlo method. The dispersive characteristic of SAW on the layered structure with rough surface and rough interface is modeled by numerical simulation of finite element method. The Young＇s moduli of the Black DiamondTM samples with different roughness values are determined by SAWs in the experiment. The results show that the influence of sample roughness is very small when the root-mean-square （RMS） of roughness is smaller than 50 nm and correlation length is smaller than 20 μm. This study indicates that the SAW technique is reliable and precise in the nondestructive mechanical detection for low-k films.     

Discrete Alfven eigenmodes in international thermonuclear experimental reactor operations with negative magnetic shear

Discrete Alfven eigenmodes in steady-state operation scenarios with negative magnetic shear in the international thermonuclear experimental reactor are investigated in this paper. These magnetohydrodynamic eigenmodes are trapped by the s-induced potential wells along the magnetic field line. Here α = -q2Rdβ/dr with q being the safety factor, the ratio between plasma and magnetic pressures, and R the major radius, and r the minor radius. Due to negligible continuum damping via wave energy tunneling, these Alfven eigenmodes could be readily destabilized by energetic particles.     

Elastic behavior of disclination dipole near nanotube with surface/interface effect

In this paper, we present an analytical solution of the interaction of the nanotube （NT） with a wedge disclination dipole in nanotube-based composites. The corresponding boundary value problem is solved exactly by using complex potential functions. The explicit expression of the force exerted on disclination dipole is given by using the generalized Peach- Koehler formula. As a numerical illustration, both the equilibrium position and the stability of the disclination dipole are evaluated for different material combinations, relative thickness of an NT, surface/interface effects, and the features of the disclination dipole. The results show that as the thickness of the NT layer increases, the NT has a relatively major role in the force acting on the disclination dipole in the NT-based composite. The cooperative effect of surface/interface stresses and the NT becomes considerable as the increase of NT layer thickness. The equilibrium position may occur, even more than one, due to the influences of the surface/interface stress and the NT thickening. The influences of the surface/interface stresses and the thickness of the NT layer on the force are greatly dependent on the disclination angle.     

Microstructural stability of NiO-containing spin valves annealed at room temperatur

Microstructure of NiO-containing Co/Cu/Co spin valves （CCC-SV） annealed at room temperature for nearly four years has been studied by synchrotron radiation X-ray diffraction. With the annealing time expanding, the thickness of each sub-layer remains nearly unchanged while the interface roughness varies obviously compared with that of samples without annealing. The roughness at the interface of NiO/Co decreases with the annealing time increasing for both of the samples with NiO layer on the top （TSV） and under the bottom （BSV） of CCC-SV. On the other hand, the roughness at Co/Cu interface increases with the annealing time expanding for BSV while it decreases for TSV. These results indicate that the structure of TSV is more stable than that of BSV.     

Thermal stability of HfO2/Si（001） films prepared by electron beam evaporation in ultrahigh vacuum using atomic oxygen

HfO2 films on silicon substrates have been prepared by electron beam evaporation in ultrahigh vacuum using atomic oxygen.Synchrotron radiation photon-electron spectroscopy was used to investigate the thermal stability of HfO2 films under an ultrahigh vacuum environment.At the temperature of 750℃,HfO2 films begin to decompose.After being further annealed at 850℃ for 3 min,HfO2 films decomposes completely,partially to form Hf-silicide and partially to form gaseous HfO.Two chemical reactions are responsible for this decomposition process.A small amount of Hf-silicide,which is formed at the very beginning of growth,may result in the films grown subsequently to be loosened,and thereby leads to a relatively low decomposition temperature.     

Stability and electronic structure studies of LaAIO3/SrTiO3 （110） heterostructures

The first-principles calculations are employed to investigate the stability, magnetic, and electrical properties of the oxide heterostructure of LaAIO3/SrTiO3 （110）. By comparing their interface energies, it is obtained that the buckled interface is more stable than the abrupt interface. This result is consistent with experimental observation. At the interface of LaAIO3/SrTiO3 （110） heterostructure, the Ti-O octahedron distortions cause the Ti tzg orbitals to split into the two- fold degenerate dxz/dyz and nondegenerate dxy orbitals. The former has higher energy than the latter. The partly filled two-fold degenerate t2g orbitals are the origin of two-dimensional electron gas, which is confined at the interface. Lattice mismatch between LaA103 and SrTiO3 leads to ferroelectric-like lattice distortions at the interface, and this is the origin of spin-splitting of Ti 3d electrons. Hence the magnetism appears at the interface of LaAIO3/SrTiO3 （110）.     

Size Effect of a Negatively Charged Exciton in a Two-Dimensional Quantum Dot

In this paper we study a negatively charged exciton （NCE）, which is trapped by a two-dimensional （2D） parabolic potential. By using matrix diagonalization techniques, the correlation energies of the low-lying states with L=0, 1, and 2 are calculated as a function of confinement strength. We find that the size effects of different states are different. This phenomenon can be explained as a hidden symmetry, which is originated purely from symmetry. Based on symmetry, the features of the low-lying states are discussed in the influence of the 2D parabolic potential well. It is found that the confinement may cause accidental degeneracies between levels with different low-excited states. It is shown that the effect of quantum confinement on the binding energy of the heavy hole is stronger than that of a light hole.