Electrical and dielectric properties of Al/p-Si and Al/perylene/p-Si type diodes in a wide frequency rangeElectrical and dielectric properties of Al/p-Si and Al/perylene/p-Si type diodes in a wide frequency rangeElectrical and dielectric properties of Al/p-Si and Al/perylene/p-Si type diodes in a wide frequency range

The perylene （C20H12） layer effect on the electrical and dielectric properties of Al/p-Si （MS） and Al/perylene/p-Si （MPS） diodes have been investigated and compared in the frequency range of 0.7 kHz-2 MHz. Experimental results show that C-V characteristics give an anomalous peak for two structures at low frequencies due to interface states （Nss） and series resistance （Rs）. The increases in C and G/o3 at low frequencies confirm that the charges at interface can easily follow an ac signal and yield excess capacitance and conductance. The frequency-dependent dielectric constant （er） and dielectric loss （e＇） are subtracted using C and G/co data at 1.5 V. The eI and e＂ values are found to be strongly dependent on frequency and voltage, and their large values at low frequencies can be attributed to the excess polarization coming from charges at traps. Plots of ln（o＇ac）-ln（w） for two structures have two linear regions, with slopes of 0.369 and 1.166 for MS, and of 0.077 and 1.061 for MPS, respectively. From the C 2-V characteristics, the doping acceptor atom concentration （NA） and barrier height （,~） for Schottky barrier diodes （SBDs） 1.303 ~ 1015 cm-3, and 1.10 and I. 13 eV, respectively. of MS and MPS types are also obtained to be 1.484 ~ 1015 and     

Impact of substrate injected hot electrons on hot carrier degradation in a 180-nm NMOSFET

Although hot carriers induced degradation of NMOSFETs has been studied for decades, the role of hot electron in this process is still debated. In this paper, the additional substrate hot electrons have been intentionally injected into the oxide layer to analyze tile role of hot electron in hot carrier degradation. The enhanced degradation and the decreased time exponent appear with the injected hot electrons increasing, the degradation increases from 21.80% to 62.00% and the time exponent decreases from 0.59 to 0.27 with Vb decreasing from 0 V to -4 V, at the same time, the recovery also becomes remarkable and which strongly depends on the post stress gate bias Vg. Based on the experimental results, more unrecovered interface traps are created by the additional injected hot electron from the breaking Si-H bond, but the oxide trapped negative charges do not increase after a rapid recovery.     

Effect of ultrathin GeO_x interfacial layer formed by thermal oxidation on Al_2O_3 capped Ge

We propose a modified thermal oxidation method in which an Al2O3 capping layer is used as an oxygen blocking layer （OBL） to form an ultrathin GeOx interracial layer, and obtain a superior Al2O3/GeOx/Ge gate stack. The GeOx interfacial layer is formed in oxidation reaction by oxygen passing through the Al2O3 OBL, in which theAl2O3 layer could restrain the oxygen diffusion and suppress the GeO desorption during thermal treatment. The thickness of the GeOx interfacial layer would dramatically decrease as the thickness of Al2O3 OBL increases, which is beneficial to achieving an ultrathin GeOx interfacial layer to satisfy the demand for small equivalent oxide thickness （EOT）. In addition, the thickness of the GeOx interfacial layer has little influence on the passivation effect of the Al2O3/Ge interface. Ge （100） p-channel metal- oxide-semiconductor field-effect transistors （pMOSFETs） using the Al2O3/GeOx/Ge gate stacks exhibit excellent electrical characteristics; that is, a drain current on-off （Ionloft） ratio of above 1 104, a subthreshold slope of - 120 mV/dec, and a peak hole mobility of 265 cm2/V.s are achieved.     

Novel high-voltage self-adaptive power device based on interface charge＊

This paper presents a novel high-voltage lateral double diffused metal-oxide semiconductor （LDMOS） with self- adaptive interface charge （SAC） layer and its physical model of the vertical interface electric field. The SAC can be self-adaptive to collect high concentration dynamic inversion holes, which effectively enhance the electric field of dielectric buried layer （EI） and increase breakdown voltage （BV）. The BV and EI of SAC LDMOS increase to 612 V and 600 V/tim from 204 V and 90.7 V/ttm of the conventional silicon-on-insulator, respectively. Moreover, enhancement factors of r/which present the enhanced ability of interface charge on EI are defined and analysed.     

F4-TCNQ concentration dependence of the current-voltage characteristics in the Au/P3HT：PCBM：F4-TCNQ/n-Si （MPS） Schottky barrier diode

In this study, we investigate some main electrical parameters of the gold/poly（3-hexylthiophene）：[6,6]-phenyl C61 bu- tyric acid methyl ester：2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquinodimethane/n-type silicon （Au/P3HT：PCBM：F4-TCNQ/n- Si） metal-polymer-semiconductor （MPS） Schottky barrier diode （SBD） in terms of the effects of F4-TCNQ concentration （0%, 1%, and 2%）. F4-TCNQ-doped P3HT：PCBM is fabricated to figure out the p-type doping effect on the device per- formance. The main electrical parameters, such as ideality factor （n）, barrier height （ФB0）, series resistance （Rs）, shunt resistance （Rsh）, and density of interface states （Nss） are determined from the forward and reverse bias current-voltage （l-V） characteristics in the dark and at room temperature. The values of n, Rs, ФB0, and Nss are significantly reduced by using the 1% F4-TCNQ doping in P3HT：PCBM：F4-TCNQ organic blend layer, additionally, the carrier mobility and current are increased by the soft （1%） doping. The most ideal values of electrical parameters are obtained for 1% F4-TCNQ used diode. On the other hand, the carrier mobility and current for the hard doping （2%） become far away from the ideal diode values due to the unbalanced generation of holes/electrons and doping-induced disproportion when compared with 1% F4-TCNQ doping. These results show that the electrical properties of MPS SBDs strongly depend on the F4-TCNQ doping and doping concentration of interfacial P3HT：PCBM：F4-TCNQ organic layer. Moreover, the soft F4-TCNQ dop- ing concentration （1%） in P3HT：PCBM：F4-TCNQ organic layer significantly improves the electrical characteristics of the Au/P3HT：PCBM：F4-TCNQ/n-Si （MPS） SBDs which enables the fabricating of high-quality electronic and optoelectronic devices.     

Interfacial characteristics of Al/Al2O3/ZnO/n-GaAs MOS capacitor

The interfacial characteristics of Al/Al2O3/ZnO/n-GaAs metal-oxide-semiconductor (MOS) capacitor are investigated. The results measured by X-ray photoelectron spectroscopy (XPS) and high-resolution transmission electron microscopy (HRTEM) show that the presence of ZnO can effectively suppress the formations of oxides at the interface between the GaAs and gate dielectric and gain smooth interface. The ZnO-passivated GaAs MOS capacitor exhibits a very small hysteresis and frequency dispersion. Using the Terman method, the interface trap density is extracted from C-V curves. It is found that the ZnO layer can effectively improve the interface quality.     

Atomic-layer-deposited Al_2O_3 and HfO_2 on InAlAs: A comparative study of interfacial and electrical characteristics

Al_2O_3 and HfO_2 thin films are separately deposited on n-type InAlAs epitaxial layers by using atomic layer deposition(ALD).The interfacial properties are revealed by angle-resolved x-ray photoelectron spectroscopy(AR-XPS).It is demonstrated that the Al_2O_3 layer can reduce interfacial oxidation and trap charge formation.The gate leakage current densities are 1.37×10~6 A/cm~2 and 3.22×10~6 A/cm~2 at+1V for the Al_2O_3/InAlAs and HfO_2/InAlAs MOS capacitors respectively.Compared with the HfO_2/InAlAs metal-oxide-semiconductor(MOS) capacitor,the Al_2O_3/InAlAS MOS capacitor exhibits good electrical properties in reducing gate leakage current,narrowing down the hysteresis loop,shrinking stretch-out of the C-V characteristics,and significantly reducing the oxide trapped charge(Q_(ot)) value and the interface state density(D_(it)).     

Interfacial thermal resistance between high-density polyethylene （HDPE） and sapphire

To improve the thermal conductivity of polymeric composites, the numerous interfacial thermal resistance （ITR） inside is usually considered as a bottle neck, but the direct measurement of the ITR is hardly reported. In this paper, a sandwich structure which consists of transducer/high density polyethylene （HDPE）/sapphire is prepared to study the interface characteristics. Then, the ITRs between HDPE and sapphire of two samples with different HDPE thickness values are measured by time-domain thermoreflectance （TDTR） method and the results are -- 2 × 10-7 m2.K.W-1. Furthermore, a model is used to evaluate the importance of ITR for the thermal conductivity of composites. The model＇s analysis indicates that reducing the ITR is an effective way of improving the thermal conductivity of composites. These results will provide valuable guidance for the design and manufacture of polymer-based thermally conductive materials.     

Direct measurement of the interfacial barrier height of the manganite p–n heterojunction

A manganite p-n heterojunction composed of Lao.67Sro.33MnO3 film and 0.05 wt% Nb-doped SrTiO3 substrate is fabricated. Rectifying behavior of the junction well described by the Shockley equation is observed, and the transport properties of the interface are experimentally studied. A satisfactorily logarithmic linear dependence of resistance on temperature is observed in a temperature range of 150 K-380 K, and the linear relation between bias and activation energies deduced from the R - lIT curves is observed. According to activation energy, the interfacial barrier of the heterojunction is obtained, which is 0.91 eV.     

Effect of traps' adjacency on the electric field dependence of mobility in organic systems

In some organic materials, varying the finite distance between adjacent carrier traps modifies the Coulomb potential around each trap, resulting in a more complex field-dependence of mobility, differing from（but not incompatible with） the usually considered relationship of ln μ∝E^1/2, a relationship which has been successfully explained by the Poole–Frenkel effect. To investigate the influence of the adjacency of traps, a model system is proposed, which consists of two traps separated by distance α. Our numerical calculation shows that with increasing α, the dependence of mobility on the electric field changes from linear to exponential. Moreover, beyond a certain large α, i.e., as the distance to the nearest trap approaches infinity, the proposed model is essentially the same as the Poole–Frenkel effect. The proposed model accounts for the effect of the energy barrier shape, especially the effect of the location of the potential-energy maximum, a phenomenon which is not accommodated in the Poole–Frenkel model. Because the model assumes the Coulomb interaction between the adjacent traps, it applies to those charged traps which may exist in organic materials for various reasons.     

Optimal design of a 7 T highly homogeneous superconducting magnet for a Penning trap

A Penning trap system called Lanzhou Penning Trap（LPT） is now being developed for precise mass measurements at the Institute of Modern Physics（IMP）.One of the key components is a 7 T actively shielded superconducting magnet with a clear warm bore of 156 mm.The required field homogeneity is 3 × 10-7 over two 1 cubic centimeter volumes lying 220 mm apart along the magnet axis.We introduce a two-step method which combines linear programming and a nonlinear optimization algorithm for designing the multi-section superconducting magnet.This method is fast and flexible for handling arbitrary shaped homogeneous volumes and coils.With the help of this method an optimal design for the LPT superconducting magnet has been obtained.     

Interfacial and electrical properties of HfAlO/GaSb metal-oxide-semiconductor capacitors with sulfur passivation

Interfacial and electrical properties of HfAlO/GaSb metal-oxide-semiconductor capacitors(MOSCAPs) with sulfur passivation were investigated and the chemical mechanisms of the sulfur passivation process were carefully studied. It was shown that the sulfur passivation treatment could reduce the interface trap density Ditof the HfAlO/GaSb interface by 35% and reduce the equivalent oxide thickness(EOT) from 8 nm to 4 nm. The improved properties are due to the removal of the native oxide layer, as was proven by x-ray photoelectron spectroscopy measurements and high-resolution cross-sectional transmission electron microscopy(HRXTEM) results. It was also found that GaSb-based MOSCAPs with HfAlO gate dielectrics have interfacial properties superior to those using HfO2 or Al2O3 dielectric layers.     

Partial-SOI high voltage laterally double-diffused MOS with a partially buried n~+-layer

A novel partial silicon-on-insulator laterally double-diffused metal-oxide-semiconductor transistor （PSOI LDMOS） with a thin buried oxide layer is proposed in this paper. The key structure feature of the device is an n＋-layer, which is partially buried on the bottom interface of the top silicon layer （PBNL PSOI LDMOS）. The undepleted interface n＋-layer leads to plenty of positive charges accumulated on the interface, which will modulate the distributions of the lateral and vertical electric fields for the device, resulting in a high breakdown voltage （BV）. With the same thickness values of the top silicon layer （10 p.m） and buried oxide layer （0.375 μm）, the BV of the PBNL PSOI LDMOS increases to 432 V from 285 V of the conventional PSOI LDMOS, which is improved by 51.6%.     

The effect of two-dimensional of a crystal interface in shear flow on the stability a supercooled melt

A model is developed based on the time-related thermal diffusion equations to investigate the effects of twodimensional shear flow on the stability of a crystal interface in the supercooled melt of a pure substance. Similar to the three-dimensional shear flow as described in our previous paper, the two-dimensional shear flow can also be found to reduce the growth rate of perturbation amplitude. However, compared with the case of the Laplace equation for a steady-state thermal diffusion field, due to the existence of time partial derivatives of the temperature fields in the diffusion equation the absolute value of the gradients of the temperature fields increases, therefore destabilizing the interface. The circular interface is more unstable than in the case of Laplace equation without time partial derivatives. The critical stability radius of the crystal interface increases with shearing rate increasing. The stability effect of shear flow decreases remarkably with the increase of melt undercooling.     

Dye-sensitized solar cells: Atomic scale investigation of interface structure and dynamics

Recent progress in dye-sensitized solar cells(DSC) research is reviewed, focusing on atomic-scale investigations of the interface electronic structures and dynamical processes, including the structure of dye adsorption onto TiO2, ultrafast electron injection, hot-electron injection, multiple-exciton generation, and electron–hole recombination. Advanced experimental techniques and theoretical approaches are briefly summarized, and then progressive achievements in photovoltaic device optimization based on insights from atomic scale investigations are introduced. Finally, some challenges and opportunities for further improvement of dye solar cells are presented.     

Magnetization reversal in perpendicular exchange-biased multilayers

Co/Pt multilayers with perpendicular magnetic anisotropy exhibit an exchange bias when covered with an IrMn layer. The exchange bias field, which is about 7 mT for 3 Co/Pt bilayer repetitions and a Co layer thickness of 5 Å, can be increased up to 16.5 mT by the insertion of a thin Pt layer at the Co/IrMn interface. The interfacial magnetic anisotropy of the Co/IrMn interface (KSCo/IrMn =-0.09 mJ/m2) favours in-plane magnetization and tends to tilt the Co spins away from the film normal. Dynamical measurements of the magnetization reversal process reveal that both thermally activated spin reversal in the IrMn layer and domain wall nucleation in the Co/Pt multilayer influence the interfacial spin structure and therefore the strength of the perpendicular exchange bias field.     

Enhanced ferroelectricity and ferromagnetism in Bio.9Bao. 1FeO3/Laz/3Srl/3MnO3 heterostructure grown by pulsed laser deposition

Bi0.9Ba0.lFeO3 （BBFO）/La2/3Srl/3MnO3 （LSMO） heterostructures are fabricated on LaA103 （100） substrates by pulsed laser deposition. Giant remnant polarization value （~ 85 μC/cm2） and large saturated magnetization value （~ 12.4 emu/cm3） for BBFO/LSMO heterostructures are demonstrated at room temperature. Mixed ferroelectric domain structures and low leakage current are observed and in favor of enhanced ferroelectrie properties in the BBFO/LSMO het- erostructures. The magnetic field-dependent magnetization measurements reveal the enhancement in the magnetic moment and improved magnetic hysteresis loop originating from the BBFO/LSMO interface. The heterostructure is proved to be effective in enhancing the ferroelectric and ferromagnetic performances in multiferroic BFO films at room temperature.     

Effects of interface roughness on photoluminescence full width at half maximum in GaN/AIGaN quantum wells

Low temperature photoluminescence （PL） measurements have been performed for a set of GaN/AlxGal xN quantum wells （QWs）. The experimental results show that the optical full width at half maximum （FWHM） increases relatively rapidly with increasing A1 composition in the AlxGal xN barrier, and increases only slightly with increasing GaN well width. A model considering the interface roughness is used to interpret the experimental results. In the model, the FWHM＇s broadening caused by the interface roughness is calculated based on the triangle potential well approximation. We find that the calculated results accord with the experimental results well.     

AlOx prepared by atomic layer deposition for high efficiency-type crystalline silicon solar cell

The influence of atomic layer deposition parameters on the negative charge density in AlOx film is investigated by the corona-charge measurement. Results show that the charge density can reach up to -1.56×10^12 cm%-2 when the thickness of the film is 2.4 nm. The influence of charge density on cell conversion efficiency is further simulated using solar cell analyzing software （PC1D）. With AlOx passivating the rear surface of the silicon, the cell efficiency of 20.66% can be obtained.     

纳米硅(nc-Si:H )/晶体硅(c-Si)异质结太阳电池的数值模拟分析

运用美国宾州大学发展的AMPS程序模拟分析了n-型纳米硅（n+-nc-Si:H）/p-型晶体硅(p-c-Si)异质结太阳电池的光伏特性.分析表明，界面缺陷态是决定电池性能的关键因素，显著影响电池的开路电压（VOC）和填充因子（FF），而电池的光谱响应或短路电流密度（JSC）对缓冲层的厚度较为敏感.对不同能带补偿（bandgap offset）的情况所进行的模拟分析表明，随着ΔEc的增大，由于界面态所带来的开路电压和填充因子的减小逐渐被消除，当ΔEc达到05eV左右时界面态的影响几乎完全被掩盖.界面层的其他能带结构特征对器件性能的影响还有待进一步研究.最后计算得到了这种电池理想情况下（无界面态、有背面场、正背面反射率分别为0和1）的理论极限效率ηmax=3117% (AM15，100mW/cm2，040—110μm波段).