LaNiO3 under-electrode layers for the growth of textured (Pb0.4Zr0.6)TiO3 thin films using pulsed laser deposition

We investigated the structural properties of LaNiO₃ thin films of three different thicknesses deposited by pulsed laser deposition on Si(001) mainly by using a synchrotron X-ray scattering measurement. The LaNiO₃ thin films were grown with the (00l) preferred growth direction, showing completely random distribution in the in-plane direction. In the early stage of the growth, the film was almost unstrained. However, as the film grew further, tensile strain was markedly involved. Also its surface became rougher but its crystalline quality improved significantly with increasing film thickness. A completely (00l)-oriented (Pb_0.4Zr_0.6)TiO₃ thin film was successfully grown on such a LaNiO₃/Si(001) substrate at a substrate temperature of 350 °C by using the same pulsed laser deposition. Our results show that the LaNiO₃ film can serve effectively as a bottom electrode layer for the preparation of a well-oriented (Pb_0.4Zr_0.6)TiO₃ thin film on Si substrates.     

Fabrication and Characterization of Si Nanocrystals Synthesized by Electron Beam Evaporation of Si and SiO2 Mixture

Silicon nanocrystals synthesized by electron beam （e-beam） evaporation of Si and SiO2 mixture are studied. Rutherford backscattering spectrometry of the as-deposited Si-rich silicon dioxide or oxide （SRO） thin film shows that after evaporation, the Si and SiO2 concentration is well kept, indicating that the e-beam evaporation is suitable for evaporating mixtures of Si and SiO2. The SRO thin films are annealed at different temperatures for two hours to synthesize silicon nanoerystals. For the sample annealed at 1050℃, silicon nanoerystals with different sizes and the mean diameter of 4.5 nm are evidently observed by high resolution transmission electron microscopy （HRTEM）. Then the Raman scattering and photoluminescence spectra arising from silicon nanocrystals are further confirmed the above results.     

Transport Behaviour of La0.8Sr0.2AlO3 Thin Film on Oxygen Deficient SrTiO3 Substrate

La_0.8Sr_0.2AlO₃ (LSAO) thin films are grown on SrTiO₃ (STO) and MgO substrates by laser molecular beam epitaxy. The LSAO thin film on oxygen deficient STO substrate exhibits metallic behaviour over the temperature range of 80--340K. The optical transmittance spectrum indicates that theLSAO thin films on MgO substrate are insulating at room temperature. The transport properties of LSAO thin films on STO substrates deposited in different oxygen pressure are compared. Our results indicate that oxygen vacancies in STO substrates should be mainly responsible for the transport behaviour of LSAO thin films.     

Structural and electrical properties of La0.5Sr0.5CoO3 films on SrTiO3 and porous a-Al2O3 substrates

Films of La_0.5Sr_0.5CoO₃ (LSCO) have been deposited on specially treated TiO₂-terminated (001) SrTiO₃ substrate surfaces and on macroporous polycrystalline !-Al₂O₃ substrates, having a mean pore diameter of 80 nm, by pulsed laser deposition. The films deposited on SrTiO₃ are good conducting, (001) textured, and exceptionally smooth (1-2 Å for 100 nm thick films). LSCO films deposited on porous !-Al₂O₃ are polycrystalline and exhibit good crystallographic and electrical properties despite the large substrate roughness and the differences in lattice parameters and crystal structure between the film and the substrate. Different growth modes have been observed on the porous !-Al₂O₃ substrates depending on the oxygen pressure during film deposition. Films grown at an oxygen pressure of 10^-1 mbar are macroporous, whereas films grown at 10^-2 mbar completely cover the substrate pores. In the latter case, strain effects lead to film cracking.     

Ferroelectric Properties of Bi3.25La0.75Ti3O12 Thin Films Crystallized inDifferent N2/O2 Ambients

Bi3.25La0.75 Ti3O12 （BLT） ferroelectric thin films are deposited by sol-gel method and annealed for crystallizaion in total l eccm N2/02 mixed gas with various ratio at 750℃ for 30rain. The effect of crystallization ambient on the structural and ferroelectric properties of the BLT films is studied. The growth direction and grain size of BLT film are revealed to affect ferroeleetric properties. Alter the BLT film is annealed in 20%O2, the largest P~ value is obtained, which is ascribed to an increase of random orientation and large grain size. The fatigue property is improved with the concentration of oxygen in the ambient increasing, which is ascribed to annealing in the ambient with high concentrated oxygen adequately decreasing the defects related to lack of oxygen.     

Ta2O5 thin-films deposited by off-axis and on-axis pulsed laser deposition techniques

The crystalline properties of Ta₂O₅ thin films deposited by an off-axis aperture-installation-type pulsed laser deposition technique are investigated and the results are compared with the results for films deposited by the conventional on-axis technique. No significant difference in the substrate temperature dependence is seen between films deposited on-axis or off-axis at a pulse repetition frequency of 30 Hz. When the repetition frequency is lowered, the degree of c-axis orientation is increased in both films. This tendency is more pronounced in the off-axis films. Therefore it is found that the off-axis aperture-installation-type pulsed laser deposition technique is effective not only for decreasing the density of droplets, but also for obtaining more highly c-axis-oriented crystalline films.     

Ge2Sb2Te5薄膜光学性能和短波长静态记录特性的研究

利用直流磁控溅射制备了单层Ge₂Sb₂Te₅薄膜,研究了薄膜在400～800 nm区域的反射、透过光谱,计算了它的吸收系数,发现薄膜在400～800 nm波长范围内具有较强的吸收.随着薄膜厚度的增加,相应的禁带宽度Eg也随之增加.对Ge2Sb2Te5薄膜光存储记录特性的研究发现,在514.5 nm波长激光辐照样品时,薄膜具有良好的写入对比度,擦除前后的反射率对比度在6%~18%范围内.对实验结果进行了分析.     

Magnetic Behaviour of Sm2Co7/Fe/Sm2 Co7, Nanocomposite Trilayers with Cr and Ti Additions

Trilayered Sm2Co7/Fe/Sm2Co7 spring exchange magnets are fabricated by dc magnetron sputtering on MgO substrates. Very thin layers （0.3-0.7 nm） of Cr and Ti are added at the interfaces of the two magnetic phases. The thickness of StucCo7 is kept at 20nm and Fe at 6nm while the thickness of Cr and Ti are varied as 0.3, 0.5, and 0.7nm. The base pressure of sputtering chamber is kept below 10^-7 Torr and Ar pressure at 3-8m Torr. The samples are characterized by x-ray diffraction （XRD） and SQUID magnetometer. We report improvement in exchange coupling of nonacomposite magnets by addition of thin layers of Cr at interfaces.     

Comparative analysis of the growth of SmBa2Cu3O7-x thin films by off-axis pulsed laser deposition on different substrates

The growth of SmBa₂Cu₃O_7-x superconducting thin films by off-axis pulsed laser deposition on different substrates (SrTiO₃, MgO, LaAlO₃, and YSZ) has been analyzed by means of resistance vs. temperature and X-ray diffraction measurements. The onset and width of the resistive transition depend on the substrate type and are in the ranges (89-80) K and (1-9) K, respectively. X-ray diffraction spectra show only the 00l reflections, from which the lattice parameter c can be estimated. Moreover, the rocking curves of the 005 peaks give an indication of the films' crystallinity and oxygen stoichiometry.     

Fast imaging of the plume expansion produced by laser ablation of LiNbO3

Fast photography of the plume produced by laser ablation of LiNbO₃ in vacuum has been performed using an image intensified CCD (ICCD) camera in a time interval up to 2 7s after the laser pulse. Two differently oriented single crystalline LiNbO₃ targets were used. The results show that although the emission intensity of the laser-generated plume initially depends on the crystalline orientation of the target, it reaches a stationary state after several minutes which is the same for both targets orientations. Under these stationary conditions, the angular distribution of the Li atoms is found to be broader than that of Nb atoms. The observed less forward directed expansion of the Li species may explain the poor Li content normally observed in films grown by laser ablation of LiNbO₃ in vacuum.     

Atomistic computer simulation studies of Sr2RuO4 and Ca2RuO4

Atomistic static computer simulation techniques have been applied to investigate the energetics of defects and dopants in Sr₂RuO₄ (SRO) and Ca₂RuO₄ (CRO). Interatomic potentials have been derived which reproduced the crystal structures of these systems. Solution energies are calculated for different dopant ions to ascertain the site occupied by the dopant ion in the host lattice. Monovalent and divalent ions are predicted to substitute preferentially at the alkaline-earth site in both the systems. Trivalent cations of smaller ionic radii substitute at the Ru sites while those having larger ionic radii prefer to substitute at the Sr or Ca sites in SRO or CRO systems, respectively. In addition, there is a possibility of self-compensation, where a trivalent cation can substitute at both Sr(Ca) and Ru sites. Tetravalent dopants are found to substitute at the ruthenium sites in both systems.     

Laser irradiation of SrTiO3 single crystals

Excimer laser irradiation (248 nm, 34 ns) of SrTiO₃(100)single crystals was studied in order to resolve the feasibility of obtaining well-defined patterned structures. Spots irradiated with a single pulse in the 0.4-1 J/cm² fluence range presented a pattern of cracks along crystallographic directions, which do not propagate beyond the borders, and no ejected material was observed on the non- irradiated areas. Arrays were patterned by translating the single crystal, and different morphologies were found depending on the width of the tracks. Tracks 10 7m wide or more developed a pattern of cracks, whereas 3 7m wide tracks did not. Artificial arrays in magnetoresistive La_2/3Sr_1/3MnO₃ thin films were prepared by using SrTiO₃(100) single-crystal substrates in which arrays had been previously patterned. The interfaces originated a substantial low-field tunnel magnetoresistance.     

Vector Coherent State Representations of SO5 SU2 SU2 U1 U1 and SO5 U1 U1

VCS representantions of SO₅ SU₂ SU₂ U₁ U₁ and SO₅ U₁ U₁ are discussed.Reduced matrix elements for SO₅ SU₂ SU₂ are derived.The multiplicity of a weight for SO₅ is determined by using the K-matrix technique.     

Laser Molecular Beam Epitaxy of Multilayer Heterostructure SrNb0.05Ti0.95O3/La0.9Sr0.1MnO3 in 10000 Unit-Cell Layers

Ten thousands of unit-cell multilayer heterosturctures, [SrNb0.05 Ti0.95O3/La0.9 Sr0.1MnO3]3 （SNTO/LSMO）, have been epitaxial grown on SrTiO3 （001） substrates by laser molecular beam epitaxy. The monitor of insitu. reflection high-energy electron diffraction demonstrates that the heterosturctures are layer-by-layer epitaxial growth. Atomic force microscope observation indicates that the surface of the heterosturcture is atomically smooth. The measurements of cross-sectional low magnification and high-resolution transmission electron microscopy as well as the corresponding selected area electron diffraction reveal that the interfaces are of perfect orientation, and the epitaxial crystalline structure shows the orientation relation of SNTO（001）//LSMO（001）, and SNTO[100]//LSMO[100].     

Electroluminescence from Multilayered Diamond/CeF3/SiO2 Films

We report a thin film electroluminescent device with a three-layer structure （diamond/CeF3/SiO2 films）, which has a luminance of 1.5 cd/m^2 at dc voltage 215 V. The electroluminescence spectrum at room temperature shows that the main peaks locate at 527 and 593nm, which are attributed to isolated emission centers of Ce^3＋ ions.     

Growth of oriented Pb(ZrxTi1-x)O3 thin films on glass substrates by pulsed laser deposition

Oriented crystalline Pb(Zr_xTi_1-x)O₃ (x=0.53) (PZT) thin films were deposited on metallized glass substrates by pulsed laser deposition (1060-nm wavelength Nd:YAG laser light, 10-ns pulse duration, 10-Hz repetition rate, 0.35-J/pulse and 25-J/cm² laser fluence), from a commercial target at substrate temperatures in the range 380-400 °C. Thin films of 1-3 7m were grown on Au(111)/ Pt/NiCr/glass substrates with a rate of about 1 Å/pulse on an area of 1 cm². The deposited PZT films with perovskite structure were oriented along the (111) direction, as was revealed from X-ray diffraction spectra. Fourier transform infrared spectroscopy (FTIR) was performed on different PZT films so that their vibrational modes could be determined. Piezoelectric d₃₃ coefficients up to 30 pC/N were obtained on as-deposited films. Ferroelectric hysteresis loops at 100 Hz revealed a remanent polarization of 20 7C/cm² and a coercive field of 100 kV/cm.     

Broadband Infrared Luminescence from Bismuth-Doped GeS2--Ga2S3 Chalcogenide Glasses

Near-infrared luminescence is observed from bismuth-doped GeS2-Ga2Sa chalcogenide glasses excited by an 808 nm laser diode. The emission peak with a maximum at about 1260 nm is observed in 80GeS2-2OGa2 Sa：O.fBi glass and it shifts toward the long wavelength with the addition of Bi gradually. The full width of half maximum （FWHM） is about 200 nm. The broadband infrared luminescence of Bi-doped GeS2-Ga2Sa chalcogenide glasses may be predominantly originated from the low valence state of Bi, such as Bi＋. Raman scattering is also conducted to claxify the structure of glasses. These Bi-doped GeS2 Ga2Sa chalcogenide glasses can be applied potentially in novel broadband optical fibre amplifiers and broadly tunable laser in optical communication system.     

Synthesis of C-N and Si-C films by pulsed laser ablation with frozen N2 and CH4 targets

The possibilities of pulsed laser single ablation (PLSA) from the frozen target materials, such as inert gases (Ar, Kr, Xe), N₂ and CH₄, using KrF excimer and YAG(SHG) lasers have been investigated. The single ablations were realized by the pulsed YAG(SHG) laser in a relatively short time, but the KrF excimer laser was unsuccessful. As an example of the application of pulsed laser co-ablation (PLCA) of the frozen target, polycrystalline hexagonal SiC films were formed without any post-thermal annealing by using frozen CH₄ on Si targets. The films, however, contain splashing Si particles. On the other hand, the PLSA method, using a mixture of frozen N₂ and CH₄ targets, enabled the formation of amorphous C-N films without splashing particles.     

Ultraviolet Photoelectron Spectroscopy of Fullerenes C60 and C70:A Model Study

Geometrical optimizations of two fullerenes, C₆₀ and C₇₀, have been performed by means of density-functional theory techniques. Based on the Gelius model, ultraviolet photoelectron spectra (UPS) of C₆₀ and C₇₀ have been simulated. We have shown how the different local arrangements of carbon atoms of C₇₀ are responsible for the spectra. Our calculated spectra are in good agreement with the experimental counterparts.     

Pulsed laser deposition of perovskite La0.5Sr0.5MnO3/La0.7Sr0.3CoO3 multilayers and their magnetotransport properties

The perovskite La_0.5Sr_0.5MnO_3-'/La_0.7Sr_0.3CoO_3-' (LSMO/LSCO) bilayers and LSMO/LSCO/LSMO trilayers are fabricated by pulsed laser deposition and their magnetic and magnetoresistive properties are investigated. The "waist"-like magnetic hysteresis for both the bilayer and trilayer is explained in terms of the inter-layer exchange coupling model based on the large difference in coercivity between LSCO and LSMO layers. The shrink of hysteresis with temperature is attributed to the temperature dependence of the magnetic crystalline anisotropy and conduction band width W. We observe smoothed remnant resistance of the multilayers over a rather wide temperature range (>100 K), while the magnetoresistance (MR) is not seriously damaged.