Structural and electrical properties of La0.5Sr0.5CoO3 films on SrTiO3 and porous a-Al2O3 substrates

Films of La_0.5Sr_0.5CoO₃ (LSCO) have been deposited on specially treated TiO₂-terminated (001) SrTiO₃ substrate surfaces and on macroporous polycrystalline !-Al₂O₃ substrates, having a mean pore diameter of 80 nm, by pulsed laser deposition. The films deposited on SrTiO₃ are good conducting, (001) textured, and exceptionally smooth (1-2 Å for 100 nm thick films). LSCO films deposited on porous !-Al₂O₃ are polycrystalline and exhibit good crystallographic and electrical properties despite the large substrate roughness and the differences in lattice parameters and crystal structure between the film and the substrate. Different growth modes have been observed on the porous !-Al₂O₃ substrates depending on the oxygen pressure during film deposition. Films grown at an oxygen pressure of 10^-1 mbar are macroporous, whereas films grown at 10^-2 mbar completely cover the substrate pores. In the latter case, strain effects lead to film cracking.     

Growth of oriented Pb(ZrxTi1-x)O3 thin films on glass substrates by pulsed laser deposition

Oriented crystalline Pb(Zr_xTi_1-x)O₃ (x=0.53) (PZT) thin films were deposited on metallized glass substrates by pulsed laser deposition (1060-nm wavelength Nd:YAG laser light, 10-ns pulse duration, 10-Hz repetition rate, 0.35-J/pulse and 25-J/cm² laser fluence), from a commercial target at substrate temperatures in the range 380-400 °C. Thin films of 1-3 7m were grown on Au(111)/ Pt/NiCr/glass substrates with a rate of about 1 Å/pulse on an area of 1 cm². The deposited PZT films with perovskite structure were oriented along the (111) direction, as was revealed from X-ray diffraction spectra. Fourier transform infrared spectroscopy (FTIR) was performed on different PZT films so that their vibrational modes could be determined. Piezoelectric d₃₃ coefficients up to 30 pC/N were obtained on as-deposited films. Ferroelectric hysteresis loops at 100 Hz revealed a remanent polarization of 20 7C/cm² and a coercive field of 100 kV/cm.     

Quantitative ferroelectric characterization of single submicron grains in Bi-layered perovskite thin films

The local polarization state and the electromechanical properties of ferroelectric thin films can be probed via the converse piezoelectric effect using scanning force microscopy (SFM) combined with a lock-in technique. This method, denominated as piezoresponse SFM, was used to characterize at the nanoscale level ferroelectric SrBi₂Ta₂O₉ and Bi₄Ti₃O₁₂ thin films, grown by pulsed laser deposition. Two types of samples were studied: polycrystalline films, with grains having random orientations, and epitaxial films, consisting of (100)_orth- or (110)_orth-oriented crystallites, 100 nm to 2 7m in lateral size, which are embedded into a (001)-oriented matrix. The ferroelectric domain structure was imaged and the piezoelectric response under different external conditions was locally measured for each type of sample. Different investigation procedures are described in order to study the ferroelectric properties via the electromechanical response. A distinct ferroelectric behavior was found for single grains of SrBi₂Ta₂O₉ as small as 200 nm in lateral size, as well as for 1.2 7m쏿 nm crystallites of Bi₄Ti₃O₁₂. By probing separately the crystallites and the matrix the investigations have demonstrated at the nanoscale level that SrBi₂Ta₂O₉ has no spontaneous polarization along its crystallographic c-axis, whereas Bi₄Ti₃O₁₂ exhibits a piezoelectric behavior along both the a- and c-directions. The electrostriction coefficients were estimated to be 3᎒^-2 m⁴/C² for polycrystalline SrBi₂Ta₂O₉ and 7.7᎒^-3 m⁴/C² for c-orientedBi₄Ti₃O₁₂. Quantitative measurements at the nanoscale level, within the experimental errors give the same values for remanent polarization and coercive field as macroscopic ferroelectric measurements performed on the same samples.     

High-quality epitaxial LaNiO3 thin films on SrTiO3(100) and LaAlO3(100)

LaNiO₃ thin films have been deposited by pulsed laser deposition on SrTiO₃(100) and LaAlO₃(100) substrates. The processing conditions have been investigated in order to optimize electrical resistivity, crystal quality, and surface morphology. Excellent properties are achieved at moderate substrate temperature and relatively low oxygen pressure, without the need for annealing. Thickness exerts an important influence on electrical transport, as the electrical resistivity increases quickly in films thicker than a few tens of nanometer. The surface of the films on LaAlO₃ is very flat in all the studied thickness range, but the films on SrTiO₃ develop a pattern of boundaries and even cracks as the thickness is higher. Below the critical thickness, high-quality epitaxial films with very smooth surface and low electrical resistivity are obtained under the optimum conditions of substrate temperature and oxygen pressure. The optimum processing conditions are different depending on the substrate, and control is especially critical in films deposited on SrTiO₃.     

Continuous-wave laser properties of 4F3/2?4I13/2 channel in the Nd3+LiNbO3:ZnO non-linear crystal

This work reports for the first time continuous-wave laser action at room temperature around 1.3 7m in Nd³⁺ doped LiNbO₃:ZnO. Optical spectroscopy has been used to determine the main laser characteristics of ⁴F_3/2‘⁴I_13/2 channel, such as emission cross section and excited-state absorption cross section at laser wavelengths. Internal optical losses have been estimated from laser gain experiments. Under non-optimal conditions laser slope efficiencies of 30% have been obtained.     

Photoluminescence in GdVO4:Bi3+, Eu3+ red phosphor

The doubly doped (Bi³⁺ and Eu³⁺) GdVO₄ powder is synthesized by hydrolyzed colloid reaction (HCR) technique and formation of material is confirmed by XRD measurement. Surface morphology has been studied by SEM measurement and the result shows uniform surface morphology. The average particle size observed by SEM is about 1 7m. The Fritsch particle sizer is used to study the particle size distribution. It distributes from O.15 to 3.57 7m. The small particle size (less than 5 7m) and the narrow particle size distribution, are the necessary requirements of good phosphor material. Photoluminescence result shows a narrow emission line of Eu³⁺ ion (4 nm FWHM) at 618 nm. The Eu³⁺ emission intensity is enhanced by a factor of five with the addition of small amount of Bi³⁺. The emission bands of VO₄^3- and Bi³⁺ partially overlap with the excitation band of Eu³⁺. The process of energy transfer from Bi³⁺ to Eu³⁺ is discussed here. The energy transfer probability is strongly dependent upon the Bi³⁺ and Eu³⁺ concentrations, with a maximum for 0.2 mol % of Bi³⁺ and 3 mol % of Eu³⁺. It drastically decreases for higher concentrations. For photoluminescent applications, the quantum efficiency (QE) of a phosphor material is an important parameter. The QE of GdVO₄:Bi,Eu(0.2,3) is 76%. The GdVO₄:Bi,Eu(0.2,3) material is proposed as an efficient photoluminescent phosphor.     

Polarized Micro-Raman Study of the Temperature-Induced Phase Transition In 0.67 Pb（Mg1/3Nb2/3）O3-0.33PbTiO3

Polarized Raman spectra of ferroelectric relaxor 0.67Pb（Mg1/3Nb2/3）O3-0.33PbTiO3 （0.67PMN-0.33PT） single crystal are systematically investigated in a wide temperature range from -196 to 600℃ by micro-Raman scattering technique. The results clearly reveal that there are two structural phase transitions in such composite ferroelectric relaxor： the rhombohedral-tetragonal （R- T） phase transition and the tetragonal-cubic （T- C） phase transition. The former occurs at about TR-T =34℃, corresponding to the vanishing of the soft A1 mode at 106cm^-1 recorded in the parallel polarization. The latter appears at about TT-C = 144℃, which can be verified with the vanishing of mode at 780cm^-1 measured in the crossed polarization.     

Large-area pulsed laser deposition of YBCO thin films: homogeneity and surface

YBCO thin films and buffer layers are deposited by a special PLD setup with an 8-cm line focus on cylindrical targets and substrate scanning perpendicular to it. Different kinds of substrates (SrTiO₃, MgO, LaAlO₃, Y-ZrO₂and sapphire) as large as 7᎜ cm² were coated with YBCO. Two important aspects of the presented PLD setup will be discussed in detail: the method of substrate heating and the variation of the angle between the incident laser beam and the target surface ("wobbling"). The surface of the target material has been investigated by SEM. The influence of target "wobbling" on the time stability of the plasma will be discussed. The homogeneity of the deposited YBCO films with respect to structural and electrical properties has been investigated by XRD, RBS/channeling, and spatially resolved inductive measurements of T_c and j_c. The values of j_c on 7᎜ cm²in situ buffered sapphire substrates are 2.0 MA/cm² at (77 K, 0 T) with a j_c variation of less than ᆨ%.     

Nanosecond UV laser damage and ablation from fluoride crystals polished by different techniques

Ablation thresholds and damage behavior of cleaved and polished surfaces of CaF₂, BaF₂, LiF and MgF₂ subjected to single-shot irradiation with 248 nm/14 ns laser pulses have been investigated using the photoacoustic mirage technique and scanning electron microscopy. For CaF₂, standard polishing yields an ablation threshold of typically 20 J/cm². When the surface is polished chemo-mechanically, the threshold can be raised to 43 J/cm², while polishing by diamond turning leads to intermediate values around 30 J/cm². Cleaved surfaces possess no well-defined damage threshold. When comparing different fluoride surfaces prepared by diamond turning it is found that the damage resistivity roughly scales with the band gap. We find an ablation threshold of 40 J/cm² for diamond turned LiF while the MgF₂ surface can withstand a fluence of more than 60 J/cm² without damage. The damage topography of conventionally polished surfaces shows flaky ablation across the laser-heated area with cracks along the cleavage planes. No ablation is observed in the case of chemo- mechanical polishing; only a few cracks appear. Diamond turned surfaces show small optical absorption but mostly cracks and ablation of flakes and, in some cases, severe damage in the form of craters larger than the irradiated area. The origin of such different damage behavior is discussed.     

Dynamics of single-wall carbon nanotube synthesis by laser vaporization

The key spatial and temporal scales for single-wall carbon nanotube (SWNT) synthesis by laser vaporization at high temperatures are investigated with laser-induced luminescence imaging and spectroscopy. Graphite/(Ni, Co) targets are ablated under typical synthesis conditions with a Nd:YAG laser at 1000 °C in a 2-in. quartz tube reactor in flowing 500-Torr Ar. The plume of ejected material is followed for several seconds after ablation using combined imaging and spectroscopy of Co atoms, C₂ and C₃ molecules, and clusters. The ablation plume expands in stages during the first 200 7s after ablation and displays a self-focusing behavior. Interaction of the plume with the background gas forms a vortex ring which segregates and confines the vaporized material within a ~1-cm³ volume for several seconds. Using time-resolved spectroscopy and spectroscopic imaging, the time for conversion of atomic and molecular species to clusters was measured for both carbon (200 7s) and cobalt (2 ms) at 1000 °C. This rapid conversion of carbon to nanoparticles, combined with transmission electron microscopy analysis of the collected deposits, indicate that nanotube growth occurs over several seconds in a plume of mixed nanoparticles. By adjusting the time spent by the plume within the high-temperature zone using these in situ diagnostics, single-walled nanotubes of controlled (~100 nm) length were grown and the first estimate of a growth rate on single laser shots (0.2 7m/s) was obtained.     

New band structures in 107Ag

High spin states in ¹⁰⁷Ag are studied via the ¹⁰⁰Mo(¹¹B, 4n)¹⁰⁷Ag reaction at an incident beam energy of 60 MeV. Prompt γ-γ coincidence and DCO ratios are measured by the detector arrays in CIAE. The level scheme has been updated and a new negative band belonging to ¹⁰⁷Ag is identified. The new negative side band has been constructed and its configuration is tentatively assigned to πg_9/2 νh_11/2(g_7/2/d_5/2).     

Photoluminescence Study of He ions hot-implanted Sapphire After 208Pb27+ of 230MeV Irradiation

In the present work the photoluminescence (PL)character of sapphire implanted with He ions and subsequently irradiated with ²⁰⁸Pb²⁷⁺ of 1.1MeV/u was studied. Sapphire single crystals were implanted with 110keV He ions at 600K temperature to fluences ranging from (0.5 to 2)×10¹⁷ ions/cm², some of them were subsequently irradiated with ²⁰⁸ Pb²⁷⁺.From experimental results we found PL spectra peaks at 375nm, 413nm, and 450nm, and it's intensity gets maximum at fluence of 5×10¹⁶ He ions/cm². Also we found a new peak at 390nm after subsequent ²⁰⁸ Pb²⁷⁺ irradiation, which is possibly due to the crystallized sediment containing nano crystal Al₂O₃ appeared on the sample surface.     

Laser-induced positive ion and neutral atom/molecule emission from single-crystal CaHPO4·2 H2O: The role of electron-beam-induced defects

We examine laser-induced ion and neutral emissions from single-crystal CaHPO₄·2 H₂O (brushite), a wide-band-gap, hydrated inorganic single crystal, with 248-nm excimer laser radiation. Both laser-induced ion and neutral emissions are several orders of magnitude higher following exposure to 2 keV electrons at current densities of 200 7A/cm² and doses of 1 C/cm². In addition to intense Ca⁺ signals, electron-irradiated surfaces yield substantial CaO⁺, PO⁺, and P⁺ signals. As-grown and as-cleaved brushite show only weak neutral O₂ and Ca emissions, whereas electron-irradiated surfaces yield enhanced O₂, Ca, PO, PO₂, and P emissions. Electron irradiation (i) significantly heats the sample, leading to thermal dehydration (CaHPO₄ formation) and pyrolysis (Ca₂P₂O₇ formation) and (ii) chemically reduces the surface via electron stimulated desorption. The thermal effects are accompanied by morphological changes, including recrystallization. Although complex, these changes lead to high defect densities, which are responsible for the dramatic enhancements in the observed laser desorption.     

Lifetime measurement of the first excited state of 64Ga

The half-life of the first excited state of ⁶⁴Ga has been measured with a pulsed beam technique. The half-life was determined to be T_1/2 = 21.9 - 0.7 7s. The corresponding B(E2) = 13.6 - 0.4 e²fm⁴ shows good agreement with the Weisskopf estimate, i.e., 15.2 e²fm⁴, thereby establishing the 2⁺ assignment to this state and the single particle nature of the 42.89 keV transition.     

Cu100-xZrx金属玻璃压缩率及压力感生晶化现象

 本文采用金刚石对顶压砧高压装置和高压X射线技术测定了两种金属玻璃线压缩率曲线；得到Cu₃₀Zr₇₀和Cu₂₅Zr₇₅的线压缩率分别为2.7×10^-3 GPa^-1和2.3×10^-3 GPa^-1，实验最高压力超过30 GPa。实验过程中首次观察到Cu-Zr金属玻璃在室温下加压发生晶化的现象。     

Role of bismuth precursor in crystallization of SrBi2Ta2O9 thin films

Crystallization of SrBi₂Ta₂O₉ (SBT) thin films was studied as a function of viscosity of bismuth precursor and baking temperature, in order to fabricate capacitors with improved ferroelectric properties. SBT thin films were deposited on to Pt substrates using a chemical solution deposition (CSD) technique. Post-deposition anneal at 750 °C for 1 h in oxygen atmosphere revealed a significant influence of baking temperature and the viscosity of bismuth precursor on the microstructure and the ferroelectric properties of SBT thin films. A high baking temperature (350 °C) and a low viscosity of bismuth precursor (8 cp) yielded larger amounts of Bi₂O₃ secondary phase, smaller SBT grains (104 nm), and lower remanent polarization (P_r=2.0 7c/cm²). Additionally, these films exhibited a very high rate of ageing (>45% reduction in P_r after 7 days). A modified CSD process is suggested, which could suppress the formation of Bi₂O₃ secondary phase. Films fabricated using modified CSD technique exhibited a much larger grain size of 165 nm, higher P_r of 7.2 7c/cm², and significantly improved ageing characteristics (<1% reduction in P_r after 7 days). A qualitative model to describe the ageing in SBT-based capacitors is also suggested.     

Radial excitation states of η and η' in the chiral quark model

A chiral quark model is applied to calculate the spectra of pseudoscalar mesons η and η'. By analyzing the obtained spectra, we find that the mesons η'(2¹S₀), η(4¹S₀), η'(3¹S₀) and η'(4¹S₀) are the possible candidates of η(1760), X(1835), X(2120) and X(2370). The strong decay widths of these pseudoscalars to all the possible two-body decay channels are calculated within the framework of the ³P₀ model. Although the total width of η'(2¹S₀) is compatible with the BES Collaboration's experimental value for η(1760), the partial decay width to ωω is too small, which is not consistent with the BES result. If X(1835) is interpreted as η(4¹S₀), the total decay width is compatible with the experimental data, and the main decay modes will be mπ a₀(980) and m π a₀(1450), which needs to be checked experimentally. The assignment of X(2120) and X(2370) to η'(3¹S₀) and η'(4¹S₀) is disfavored in the present calculation because of the incompatibility of the decay widths.     

Physical Explanation on Designing Three Axes as Different Resolution Indexes from GRACE Satellite-Borne Accelerometer

The GRACE Earth＇s gravitational field complete up to degree and order 120 is recovered based on the same and different three-axis resolution indexes from satellite-borne accelerometer using the improved energy conservation principle. The results show that designing XA1（2） as low-sensitivity axis （3 × 10^-9 m/s^2） of accelerometer and designing YA1（2） and ZA1（2） as high-sensitivity axes （3 × 10^-10 m/s^2） are reasonable. The physical reason why the resolution of XA1（2） is one order of magnitude lower than YA1（2） and ZA1（2） is that non-conservative forces acting on GRACE satellites are mainly decomposed into YA1（2） and ZA1（2） in the orbital plane. Since XA1（2） is not orthogonal accurately to orbital plane during the development of accelerometer, the measurement of XA1（2） can not be thrown off entirely, but be reduced properly.     

Preferential orientation of modified SrBi2Nb2O9 ferroelectric thin films prepared by pulsed laser deposition

We report on the deposition of SrBi₂Nb₂O₉ and Sr_1-xNa_xBi_2-xTe_xNb₂O₉ ferroelectric thin films on Pt/TiO₂/SiO₂/(100)Si substrates using the pulsed laser deposition technique. Deposition on substrates heated to 600-700 °C produces {11l} film texture and dense films with grain sizes up to about 500 nm. The recrystallization at 700 °C of amorphous films deposited at lower temperatures enhances the contribution of the {100} and {010} orientations. These films show smaller grain size, namely 50-100 nm. {11l}-oriented Sr_1-xNa_xBi_2-xTe_xNb₂O₉ films have remnant polarization P_rۆ 7C/cm², a coercive field E_c䏐 kV/cm and dielectric constant, )𪓴. The low value of P_r is probably related to the low fraction of grains with the ferroelectric axis in the direction of the applied field, E. The recrystallized films have more grains with the ferroelectric axis parallel to E; however, they have a low resistivity which so far has prevented electrical characterization.     

Dependence of functional properties on processing in sol-gel (Pb,La)TiO3 thin films

Pb_0.88La_0.08TiO₃ films were processed on Si-based substrates by a diol-based sol-gel route from solutions with variable content of PbO excess. Crystallisation was performed at heating rates of 10 °C min^-1 and higher than 500 °C min^-1 (rapid heating). The pyroelectric coefficient was measured after poling the samples by two methods: applying a sinusoidal wave and applying a train of square pulses, with the latter showing a higher poling efficiency. The piezoelectric d₃₃ coefficient was determined by double-beam interferometry. Strain vs. field measurements provided evidence of 90° domain orientation in these films. Those crystallised at 10 °C min^-1 showed the highest functional properties (%=1.7᎒^-2 7C cm^-2 K^-1 and d₃₃=57 pm V^-1). This is a consequence of the higher stability of the 90° domains oriented during poling, caused by the lower tensile stress arising during preparation. The voltage responsivity of these films also benefited from the lower permittivity arising from their higher porosity. These films are good candidates for applications in infrared detectors and microelectromechanical devices.