微波ECR等离子体辅助物理汽相沉积技术

微波电子回旋共振（ＥＣＲ）能够在低气压下产生高密度、高电离度的等离子休．这种等离子体是离子镀最合适的等离子体源，可广泛地应用于等离子体沉积薄膜和表面处理的新工艺，生产高质量的各种金属薄膜、氮化物膜，碳化物膜、氧化物膜、硅化物膜及其他化合物膜．本文着重介绍微波ＥＣＫ等离子体辅助物理汽相沉积（ＥＣＲＰＰＶＤ）技术．     

用甲醇－氢混合气源在不锈钢上生长金刚石薄膜的研究

利用甲醇－氢（ＣＨ３ＯＨ－Ｈ２）混合气体为气源，３０ｎｍ厚的无定形硅为过渡层，借助于微波等离子体化学气相沉积（ＭＷＣＶＤ）成功地将金刚石薄膜生长在不锈钢上，其最低生长温度可至４２０℃，并且甲醇－氢混合气体比传统的甲烷－氢（ＣＨ４－Ｈ２）更具优势，测试表明这种金刚石薄膜有希望作为耐磨层在工业上应用     

电子回旋共振等离子分解CH19Si2N制备SICNB膜XPS分析

电子回旋共振等离子分解ＣＨ１９Ｓｉ２Ｎ－Ｎ２混合气体，采用溅射共混、气相液相共混沉积技术，制备四元素ＳｉＣＮＢ膜，由ＸＰＳ分析了膜的成份及生成的键结构，发现溅射共混、气液共混沉积过程中聚合成了Ｃ－Ｎ、Ｃ－Ｂ、Ｎ－Ｂ、Ｓｉ－Ｃ化合物。     

面向等离子体部件沉积特性的数值模拟研究

采用粒子模拟研究方法，利用PEGASUS 程序对等离子体环境下面向等离子体部件的沉积特性进行了模拟研究。结果显示部件表面连接缝隙尺寸、表面粗糙度、粒子入射的角度以及流量对沉积影响显著。在能量较小、溅射可忽略时，能量对沉积的影响很小。粗糙度越小，沉积量越小；同一种粗糙度，不同轮廓也会使沉积发生较大变化，轮廓一致的更有利于减小沉积。该模拟对研究等离子体与材料相互作用，分析瓦片缝隙尺寸、瓦片加工工艺和等离子体参数对面向等离子体部件沉积行为的影响具有重要意义。     

用椭偏法分析单波段及双波段兼容a—C：H增透膜

讨论了在单昌锗上为获得单波段（３－５μｍ）及双波段（３－５μｍ，８－１２μｍ）兼容ａ－Ｃ：Ｈ增透膜所必需的膜系设计，及用椭偏法对该膜进行的增透结果分析。结果表明，ａ－Ｃ：Ｈ膜是理想的红外增透膜。椭偏法对分析所制备的膜是否符合膜系设计要求及沉积工艺参数的确定具有重要意义。     

用椭偏法分析单波段及双波段兼容a－C：H增透膜

讨论了在单晶锗上为获得单波段（３～５μｍ）及双波段（３～５μｍ、８～１２μｍ）兼容ａ－Ｃ：Ｈ增透膜所必需的膜系设计，及用椭偏法对该膜进行的增透结果分析。结果表明，ａ－Ｃ：Ｈ膜是理想的红外增透膜。椭偏法对分析所制备的膜是否符合膜系设计要求及沉积工艺参数的确定具有重要意义。     

低温等离子体聚合有机膜保护的YBaCuO超导体耐受性及机理研究

本文基于对低温等离子体聚合有机硅薄膜的化学稳定性特和机理的研究。探讨了在ＹＢａＣｕＯ超导体表面沉积等离子体有机硅聚合膜后对不环境的耐受性。     

电子回旋共振微波等离子体化学气相沉积

本文叙述了电子回旋共振微波等离子体化学气相沉积（ＥＣＲＰＣＶＤ）的工作原理、特点及其应用．ＥＣＲＰＣＶ Ｄ由放电室、淀积室、微波系统、磁场线圈、气路与真空系统组成．处于放电室的等离子体在磁场中做回旋运动，使电子的回旋运动频率与微波频率相同；处于回旋共振条件下的电子有效地吸收微波功率而获得高的能量，从而产生高活性和高密度的等离子体．电离度大于１０％，电子密度为１０１３ｃｍ３．ＥＣＲＰＣＶＤ可在低的气体流量、衬底不加热的情况下高速淀积高质量薄膜．以该技术淀积的Ｓｉ，Ｎ４，ＳｉＯ２薄膜可分别与高温ＣＶＤ的Ｓｉ３Ｎ４高温热氧化的ＳｉＯ２相比拟．ＥＣＲＰＣＶＤ淀积ａ－Ｓｉ：Ｈ淀积速率为通常ＣＶＤ的２０倍，而性能与射频ＣＶＤ淀积的ａ－Ｓｉ：Ｈ相当．ＥＣＲＰＣＶＤ 已成功用于淀积多种薄膜。     

a－Si：H／a－SiC＿x：H超晶格的界面特性

报道等离子体化学汽相沉积法制备的ａ－Ｓｉ：Ｈ／ａ－ＳｉＣ：Ｈ超晶格的蓝移现象，用小角度Ｘ射线衍射确定超晶格的界面陡度。通过红外测量和常数光电流测量发现，超晶格界面附近存在较高浓度的Ｈ和较多的Ｓｉ－Ｃ键，界面Ｈ的热稳定性较差，界面缺陷态密度为１．２×１０￣（１１）ｃｍ￣（－２）。     

测试温度对nc—Si：H膜光致发光特性的影响

利用常规等离子体化学气相沉积（ＰＥＣＶＤ）工艺制备了ｎｃ－Ｓｉ：Ｈ膜，并对其光致发光（ＰＬ）特性从１０－２５０Ｋ温度范围内进行了变温测量，实验结果指出，随着测试温度升高，ＰＬ峰值能量发生了５４ｍｅＶ的红移，ＰＬ强度在Ｔ〉８０Ｋ后呈指数下降趋势，ＰＬ峰值能量的红移起因于带隙收缩，而ＰＬ强度的减弱则是由于非辐射复合起了主导作用。     

Investigation on RF styrene plasma by emission spectroscopy

In order to gain an insight into the processes in an RF styrene plasma, gas phase plasmas were investigated by emission spectroscopy. The plasma reactor was a bell-jar-type chamber with two parallel plate electrodes. The measurement of plasma emission spectra was made with axial resolution. The correlations among the emission intensities of CH and C₄H₂⁺ species, the polymer deposition rate and the polymeric structure of the deposited films were studied. The proposed analysis showed that the gas flow pattern in the plasma reactor, and the difference in collisions between styrene monomer molecules and energetic free electrons occurring in the plasma region and RF sheath, made the fragments and ions produced change in the different regions, resulting in a change in polymeric structure and deposition rate of the polymer films. With increasing distance between the substrate position and the lower electrode, the deposition rate and the concentration of phenyl groups both at the polymer surface and in the bulk decreased     

氮气氛下(100)织构金刚石薄膜的成核与生长研究

利用热丝化学气相沉积法研究了氮气浓度对金刚石薄膜成核和生长的影响.实验发现氮气的 加入对金刚石成核密度影响不大,但促进了已形成的金刚石核的长大.适量的氮气不仅使金 刚石生长速率得到很大的提高,而且稳定了金刚石薄膜(100)面的生长,使金刚石薄膜具有 更好的(100)织构.利用原位光发射谱对衬底附近的化学基团进行了研究.研究表明,氮气的 引入使得金刚石生长的气相化学和表面化学性质发生了很大变化.含氮基团的萃取作用提高 了金刚石表面氢原子的脱附速率,从而提高了金刚石膜的生长速率.而含氮基团的选择吸附 使金刚石 关键词： 氮气 金刚石薄膜 织构 原位光发射谱     

氮掺入对N型纳米硅薄膜微观结构及光电特性影响

采用等离子体增强化学气相沉积技术(PECVD)通过改变NH₃流量制备出不同含氮量N型富硅氮化硅硅薄膜。利用Raman散射、红外吸收、紫外-可见光分光光度计及暗态I-V测量等技术分析了氮掺入对薄膜微观结构以及光电特性的影响。结果显示,随着NH₃的增加,薄膜由微晶硅向纳米硅结构转变,薄膜中晶粒尺寸减少,晶化度降低,微观结构有序性降低,所对应薄膜光学带隙增大,而带尾分布变窄。同时,红外吸收谱分析表明,Si—N键合密度增加,P掺杂受阻。暗态I-V测量显示,薄膜电导率随着NH₃掺入整体较微晶硅降低,但随NH₃增加,电导率受到迁移率和载流子浓度等特征共同作用先降低后变大,揭示了影响薄膜电导率的机制存在一定的竞争,然而过高的非晶网络结构将增大载流子的复合导致薄膜电导率显著降低。     

氮化硅薄膜中纳米非晶硅颗粒的键合结构及光致发光

采用螺旋波等离子体化学气相沉积技术以N₂/SiH₄/H₂为反应气体制备了镶嵌有纳米非晶硅颗粒的氢化氮化硅薄膜,通过改变N₂流量实现了薄膜从红到蓝绿的可调谐光致发光.傅里叶红外透射和紫外-可见光吸收特性分析表明,所生长薄膜具有较高的氢含量,N₂流量增加使氢的键合结构发生变化,非晶硅颗粒尺寸减小,所对应的薄膜的光学带隙逐渐增加和微观结构有序度减小.可调光致发光(PL)主要来源于纳米硅颗粒的量子限制效应发光,随N₂流量增加,PL的谱线展宽并逐渐增强. 关键词： 傅里叶红外透射谱 光吸收谱 纳米硅粒子镶嵌薄膜 光致发光     

不同厚度的MgB_2超薄膜的制备和性质研究

本文报导了利用混合物理化学气相沉积法(Hybrid physical-chemical vapor deposition,HPCVD)在SiC(0001)衬底上制备干净的MgB2超薄膜.在背景气体压强、载气H2流量等条件一定的情况下,改变B2H6流量及沉积时间,制备不同厚度的MgB2超薄膜样品,并研究了超导转变温度Tc、剩余电阻率ρ(42K)、上临界场Hc2等与膜厚的关系.这系列超薄膜生长沿c轴外延,随膜厚度的变小Tc(0)降低,ρ(42K)升高.膜在衬底上的生长遵循Volmer-Weber岛状生长模式.对于10nm厚的膜,Tc(0)~32.4K,ρ(42K)~124.92μΩ·cm,其表面连接性良好,平均粗糙度为2.72nm,上临界磁场Hc2(0K)~12T,零场4K时的临界电流密度Jc~107A/cm2,为迄今为止所观测到的10nm厚MgB2超薄膜的最高Jc值,这也证明了10nm厚的MgB2膜在超导纳米器件上具有很强的应用潜力.     

Plasma polymerization of styrene with carbon dioxide under glow discharge conditions

Plasma polymerization gains increasing interest for the deposition of films with functional properties suitable for a wide range of modern applications on account of its advantageous features. In this study, carbon dioxide (CO₂) was chosen as carrier gas at flow rates of 30 and 60 sccm, respectively and styrene vapor was used as the monomer to prepare polystyrene films on glass substrates. The structure and composition of the plasma polymerized films were characterized by X-ray photoelectron spectroscopy (XPS), Fourier transform infrared spectroscopy (FT-IR) and compared with the film prepared by conventional thermal polymerization. The morphology information of the films was provided by optical microscopy. XPS and FT-IR results reveal that chemical composition of the plasma polymerized films is different from that of the thermal polymerized film and that oxygen content in the plasma polymerized films increases with the flow rate of CO₂. Furthermore, the presence of oxygen-containing groups on the surface of plasma polymerized polystyrene films is confirmed. It is also found that the composition and morphology of the plasma polymerized films are controlled by the flow rate of CO₂.     

Effects of flow ratios on surface morphology and structure of hydrogenated amorphous carbon films prepared by microwave plasma chemical vapor deposition

A series of hydrogenated amorphous carbon (a-C:H) films were deposited on silicon substrates by microwave plasma chemical vapor deposition technique with a mixture of hydrogen and acetylene. The effects of flow ratio of hydrogen to acetylene on surface morphology and structure of a-C:H films were investigated using surface-enhanced Raman spectroscopy and scanning probe microscope (SPM) in the tapping AFM mode. Raman data imply a transition from graphite-like phase to diamond-like bonding configurations when the flow ratio increases. AFM measurements show that the increase in hydrogen content, to some extent, can smoothen the surface morphology and decrease the RMS roughness. Excessive hydrogen is found to cause the formation of polymeric hydrocarbon clusters in the films and reduce deposition rate.     

Plasma-enhanced chemical vapor deposition of organic particle thin films

Five organic precursors, 2,5-dimethyl-2,4-hexadiene, 2,5-norbornadiene, α-terpinine, limonene, and styrene have been studied as precursors for plasma deposition of low-k films. The films have been produced under particle-forming conditions in the plasma. Accordingly, films have a granular structure with grain sizes in the range 40–400 nm, as determined by AFM. Annealing at 400 °C preserves the granular structure of the films while the grain size decreases. Of the five precursors examined, 2,5-dimethyl-2,4-hexadiene and 2,5-norbornadiene produce films with the lowest dielectric constant, with a value of 3.3. While the dielectric constant varies with deposition conditions (pressure, flow rate, concentration of precursor), we find that the grain size of the films correlates most closely with the dielectric constant and conclude that the lowest value of the dielectric constant are obtained under conditions that promote the formation of particles larger than about 200 nm.     

不同CHF3/CH4流量比下沉积a-C∶F∶H薄膜键结构的红外分析

通过微波电子回旋共振等离子体化学气相沉积方法使用CH₄/CHF₃源气体制备a-C∶F∶H薄膜.红外结果表明,a-C∶F∶H薄膜随着流量比R=[CHF₃]/[CHF₃]+[CH₄])的变化存在结构上的演变,R<64%时,薄膜主要是以类金刚石(DLC)特征的结构为主;当R>64%时,薄膜表现为一个类聚四氟乙烯(PTFE)的结构,结构单体主要为CF₂.同时这种结构上的变化影响着薄膜 关键词： a-C∶F∶H薄膜 傅里叶变换红外光谱 紫外可见光谱     

Optical emission spectroscopy during fabrication of indium-tin-oxynitride films by RF-sputtering

Indium-tin-oxide (ITO) and indium-tin-oxynitride (ITON) films have been deposited on glass by rf-sputtering from an ITO target, using Ar plasma and N₂ plasma, respectively, and different rf-power. Optical emission spectroscopy (OES) was employed to identify the species present in the plasma and to correlate them with the properties of the ITO and ITON thin films. Emission lines of ionic In could only be detected in N₂ plasma, whereas in the Ar plasma additional lines corresponding to atomic In and InO, were detected. The deposition rate of thin films was correlated with the In species, rather than the nitrogen species, emission intensity in the plasma. The higher resistivity and lower carrier concentration of the ITON films, as compared to the respective properties of the ITO films, were attributed to the incorporation of nitrogen, instead of oxygen, in the ITON structure.