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不同CHF3/CH4流量比下沉积a-C∶F∶H薄膜键结构的红外分析
引用本文:辛煜,宁兆元,甘肇强,陆新华,方亮,程珊华.不同CHF3/CH4流量比下沉积a-C∶F∶H薄膜键结构的红外分析[J].物理学报,2001,50(12):2492-2496.
作者姓名:辛煜  宁兆元  甘肇强  陆新华  方亮  程珊华
作者单位:(1)苏州大学化学系,苏州215006; (2)苏州大学物理系,苏州215006
摘    要:通过微波电子回旋共振等离子体化学气相沉积方法使用CH4/CHF3源气体制备a-C∶F∶H薄膜.红外结果表明,a-C∶F∶H薄膜随着流量比R=CHF3]/CHF3]+CH4])的变化存在结构上的演变,R<64%时,薄膜主要是以类金刚石(DLC)特征的结构为主;当R>64%时,薄膜表现为一个类聚四氟乙烯(PTFE)的结构,结构单体主要为CF2.同时这种结构上的变化影响着薄膜 关键词: a-C∶F∶H薄膜 傅里叶变换红外光谱 紫外可见光谱

关 键 词:a-C∶F∶H薄膜  傅里叶变换红外光谱  紫外可见光谱
文章编号:1000-3290/2001/50(12)2492-05
收稿时间:5/5/2001 12:00:00 AM
修稿时间:7/2/2001 12:00:00 AM

INFRARED ANALYSIS OF BOND CONFIGURATION FOR THE a-C:F: H FILMS DEPOSITED AT VARIABLE CHF3/CH4 FLOW RATIOS
XIN YU,NING ZHAO-YUAN,GAN ZHAO-QIANG,LU XIN-HUA,FANG LIANG and CHENG SHAN-HUA.INFRARED ANALYSIS OF BOND CONFIGURATION FOR THE a-C:F: H FILMS DEPOSITED AT VARIABLE CHF3/CH4 FLOW RATIOS[J].Acta Physica Sinica,2001,50(12):2492-2496.
Authors:XIN YU  NING ZHAO-YUAN  GAN ZHAO-QIANG  LU XIN-HUA  FANG LIANG and CHENG SHAN-HUA
Abstract:a-C∶F∶H films are prepared by microwave ECR plasma-enhanced chemical vapor deposition method at variable CHF3/CH4 gas flow raitos. The results from the Fourier transform-infra-red abserption for these films have shown that a structural evolution of the a-C∶F∶H film occurs at variable flow ratios R =CHF3]/(CHF3]+CH4]). The main structure of the films is diamond-like carbon (DLC) characteristics for R less than 64%. The film presents a structure of PTFE-like as R is larger than 64%, where the dominant structural monomer is —CF2. Meanwhile, this structural evolution has also an influence on optical gap of the films. Optical gap decreases with the increase of flow ratios in the region of DLC-like characteristics, while increasing in the PTFE-like region. The transmittance of the a-C∶F∶H film is close to 100% for R larger than 92%.
Keywords:a  C∶F∶H film  Fourier  transform infrared spectroscopy  ultraviolet  visible spectroscopy
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