不同CHF_3/CH_4流量比下沉积a-C∶F∶H薄膜键结构的红外分析

通过微波电子回旋共振等离子体化学气相沉积方法使用CH4 CHF3源气体制备a C∶F∶H薄膜 .红外结果表明 ,a C∶F∶H薄膜随着流量比R =[CHF3] [CHF3] [CH4])的变化存在结构上的演变 ,R <6 4%时 ,薄膜主要是以类金刚石 (DLC)特征的结构为主 ;当R >6 4%时 ,薄膜表现为一个类聚四氟乙烯 (PTFE)的结构 ,结构单体主要为 CF2 .同时这种结构上的变化影响着薄膜的光学带隙 .在类DLC特征结构区 ,Eg 随着流量比的增加而下降 ,而在类PTFE区 ,Eg 则随着流量比的上升而上升 .a C∶F∶H薄膜在R >92 %时透射率接近 10 0 %     

SO2-4/BO3-3掺杂对NaGd(MoO4)2∶Eu3+荧光粉发光性能影响的研究

采用柠檬酸钠为表面活性剂的水热法制备了NaGd(MoO₄)₂∶xEu3+(x=10%, 20%, 30%, 40%)和NaGd(MoO₄)₂∶7%Eu3+, ySO2-₄/BO3-₃荧光粉,对所制备样品的晶相、形貌、发光性质进行了表征。XRD分析表明NaGd(MoO₄)₂∶xEu3+和NaGd(MoO₄)₂∶7%Eu3+, ySO2-₄/BO3-₃荧光粉均为四方相的白钨矿结构;红外光谱测试发现有SO2-₄/BO3-₃的特征吸收峰,这表明SO2-₄/BO3-₃被成功掺入基质;荧光光谱测试说明,在NaGd(MoO₄)₂基质中Eu3+掺杂量为30%时发光最强;通过研究NaGd(MoO₄)₂∶7%Eu3+, ySO2-₄/BO3-₃荧光粉的发射光谱,发现适量的SO2-₄/BO3-₃掺杂会使Eu3+的特征发射增强,且掺杂10%SO2-₄或10%BO3-₃后可以减少3%左右的Eu3+掺杂,起到了节约稀土掺杂量的作用。     

微波电子回旋共振等离子体化学气相淀积法制备非晶氟化碳薄膜的研究

采用电子回旋共振等离子体化学气相淀积(ECR-CVD)法，以C₄F₈和CH₄为源气体制备了非晶氟化碳(a-C：F)薄膜.X射线电子能谱(XPS)和傅里叶变换红外光谱(FTIR)分析表明，a-C：F薄膜退火后厚度减小是由于位于a-C：F薄膜交联结构末端的C—C和CF₃结合态的热稳定性较差，导致退火时容易生成气态挥发物造成的.a-C：F膜介电常数在300℃氮气气氛中退火后由于电子极化增大和薄膜密度增加而上升，界面态陷阱密度从(5—9)×10¹¹eV^-1·cm^-2降至(4—6)×10¹¹eV^-1·cm^-2.a-C：F薄膜导电行为在低场强区域呈现欧姆特性，在高场强区域符合 Poole-Frankel机理.非定域π电子在带尾形成陷阱且陷阱能量在退火后降低，从而使更多陷阱电子在场增强热激发作用下进入导带并引起电流增大. 关键词： a-C：F ECR-CVD 键结构 电学性质     

地基高分辨率傅里叶变换红外光谱反演环境大气中的CH4浓度变化

CH₄在大气中的浓度较低(～1.8 ppmv)且混合较为均匀, 不同区域浓度差较小, 其在大气中微量变化的精确观测对反演技术提出了很高要求. 基于高分辨率(0.02 cm^-1)傅里叶变换直射太阳光谱, 研究一种高精度、大尺度的CH₄浓度反演方法, 高灵敏地观测CH₄在大气强背景下的浓度变化. 先利用先验参数实现测量光谱的准确建模, 再采用非线性最小二乘光谱拟合和非线性逐次迭代相结合的方法反演CH₄的垂直柱浓度(vertical column density, VCD), 并以7885 cm^-1 O₂ 吸收窗口为参考, 反演CH₄的柱平均干空气混合比浓度(column-averaged dry air mixing ratios) XCH₄. CH₄ VCD和XCH₄拟合误差均小于1%, 且绝大多数XCH₄反演值均位于Total Carbon Column Observing Network (TCCON)规定的<0.5%区间内. 基于典型的日观测值, 研究了CH₄浓度的日变化规律, CH₄ VCD随时间变化而减少, XCH₄的日变化量小于0.02 ppmv.     

反应磁控溅射法制备的氟化类金刚石薄膜的XPS结构研究

采用射频反应磁控溅射法用高纯石墨作靶、三氟甲烷(CHF₃)和氩气(Ar)作源气体制 备了氟化类金刚石（FDLC）薄膜，通过XPS光谱结合拉曼光谱、红外透射光谱和紫外 可见光光谱研究了源气体流量比等工艺条件对薄膜中键结构、sp2/sp3杂化比以及光学带隙等性能的影响.结果表明在低功率(60W)、高气压(2.0Pa)和适当的流量比(Ar/CHF₃=2∶ 1)下利用射频反应磁控溅射法可制备出氟含量高且具有较宽光学带隙和超低介电常数的FDLC薄膜. 关键词： 反应磁控溅射 氟化类金刚石薄膜 红外透射光谱 XPS光谱     

前驱液成分对TFA-MOD法制备YBa2Cu3O7-x薄膜超导性能的影响

采用三氟乙酸盐-金属有机沉积法(TFA-MOD)在铝酸镧单晶基体上制备了YBa₂Cu₃O_7-x (YBCO)超导薄膜.通过改变前驱液的成分,研究了金属元素的不同化学计量比对YBCO薄膜的结构和性能的影响.结果表明,按照钇盐Y(CH₃COO)₃与钡盐Ba(CH₃COO)₂的比例为Y ∶Ba=1 ∶1.5时所制备的YBCO薄膜的临界电流密度比严 关键词： 三氟乙酸盐-金属有机沉积 钇钡铜氧薄膜 前驱液成分 磁通钉扎     

GeC薄膜的射频磁控反应溅射制备及性质

用射频磁控反应溅射法在ZnS衬底上制备了GeC薄膜,研究了工艺参数对Ge靶溅射及GeC薄膜红外透射性能的影响.衬底温度较低时GeC薄膜中含有H,形成了CH₂,CH₃,Ge-CH₃等,使薄膜产生红外吸收;随衬底温度升高,薄膜红外吸收明显减小.靶基距、射频功率、Ar:CH₄气体流量比、总气压对靶面中毒及溅射影响较大,但对GeC薄膜红外吸收影响较小.靶面中毒严重时,所制备无氢GeC薄膜附着性能差,随靶中毒减弱薄膜附着性能变好.优化工艺后,在ZnS衬底上制备了附着性能良好的无氢GeC薄膜,其折射率约为1.78,薄膜中C的含量比Ge的大,二者主要形成了C—Ge键.所制备的GeC/GaP红外增透保护膜系对ZnS衬底有良好的增透效果. 关键词： GeC薄膜 红外透射光谱 射频磁控溅射 XPS     

Na4Ca3(AlO2)10∶Eu2+,Mn2+荧光粉的发光特性

采用高温固相法,制得一种新型荧光粉Na₄Ca₃(AlO₂)₁₀∶Eu²⁺,Mn²⁺。样品的结构和发光性质分别由X射线衍射谱和荧光光谱来表征。在Na₄Ca₃(AlO₂)₁₀∶Eu²⁺的激发光谱中出现了Eu²⁺的f-d跃迁吸收带;在发射光谱中,出现蓝光发射,峰值位于441 nm。当在Na₄Ca₃(AlO₂)₁₀∶Eu²⁺中掺杂Mn²⁺时,发生了Eu²⁺→Mn²⁺的能量传递,在542 nm处出现了Mn²⁺的发射峰。在Na₄Ca₃(AlO₂)₁₀∶Eu²⁺,Mn²⁺中,随着Mn²⁺浓度的增加,Eu²⁺粒子的发射强度减弱,而Mn²⁺粒子的发射强度增强,且Eu²⁺离子发射的衰减时间缩短,同时色度由蓝光移向白光。     

正磷酸盐晶体Ba3(PO4)2和Sr3(PO4)2高温拉曼光谱研究

测量了碱土金属正磷酸盐Ba₃(PO₄)₂和Sr₃(PO₄)₂常温及高温拉曼光谱, 对拉曼振动模式进行指认, 并分析了晶体拉曼振动光谱及晶体结构在高温下的变化. 在温度升高的过程中, 拉曼振动频率向低频移动且振动峰宽度展宽, 晶体中的P-O平均键长随温度升高而变长, 但O-P-O的键角并未发生变化. 晶体在900 ℃以下无结构相变发生. 关键词： 3(PO₄)₂和Sr₃(PO₄)₂')" href="#">Ba₃(PO₄)₂和Sr₃(PO₄)₂ 高温拉曼光谱 振动模式 高温结构     

源气体对沉积的a-C∶F∶H薄膜结构的影响

采用微波电子回旋共振等离子体化学气相沉积(MWPECRCVD)方法,使用不同的源气体(CHF3CH4,CHF3C2H2,CHF3C6H6)体系制备了aC∶F∶H薄膜.由于CH4,C2H2,C6H6气体在等离子体中的分解反应不同导致了薄膜的沉积速率和结构上的差异.红外吸收谱的结果表明,用C6H6CHF3作为源气体沉积的薄膜中几乎不含H,而用C2H2CHF3所沉积的薄膜中的含氟量最高,其相应的CF振动峰位向高频方向偏移.薄膜的真空退火结果表明,aC∶F∶H薄膜的热稳定性除了取决于薄膜的CC键浓度外,还与CC键 关键词： 氟化非晶碳膜 电子回旋共振化学气相沉积 红外吸收光谱     

Elucidating surface properties of dry-etched ZnO using H2/CH4 and H2/CH4/Ar plasma

This paper reports a study of reactive ion etching (RIE) of n-ZnO in H₂/CH₄ and H₂/CH₄/Ar gas mixtures. Variables in the experiment were gas flow ratios, radio-frequency (rf) plasma power, and total pressure. Structural and electrical parameters of the etched surfaces and films were determined. Both the highest surface roughness and highest etching rate of ZnO films were obtained with a maximum rf power of 300 W, but at different gas flow ratios and working pressures. These results were expected because increasing the rf power increased the bond-breaking efficiency of ZnO. The highest degree of surface roughness was a result of pure physical etching by H₂ gas without mixed CH₄ gas. The highest etching rate was obtained from physical etching of H₂/Ar species associated with chemical reaction of CH₄ species. Additionally, the H₂/CH₄/Ar plasma treatment drastically decreased the specific contact and sheet resistance of the ZnO films. These results indicated that etching the ZnO film had roughened the surface and reduced its resistivity to ohmic contact, supporting the application of a roughened transparent contact layer (TCL) in light-emitting diodes (LEDs).     

a-C∶H(N)薄膜结构的X射线光电子能谱分析

采用直流-射频等离子增强化学汽相沉积技术制备a-C∶H(N)薄膜，用X射线光电子能谱研究了混合气体中N₂含量对薄膜成分与结构的影响.a-C∶H(N)薄膜中含氮量可达9.09%.对a-C∶H(N)薄膜的C1s和N1s结合能谱的分析表明a-C∶H(N)薄膜的结构是由C₃N₄相镶嵌在sp²键结合的CN_x基体中组成.其中C₃N₄相中N和C原子比接近4∶3，不随薄     

A study on the GVFF of CHF3, CH2F2, and CH3F

The complete GVFF of CHF₃, CH₂F₂, and CH₃F has been calculated from self-consistent-field ab initio energies, using a 4–31 G basis set. The larger part of the interaction force constants is close to those of the best available force fields from experimental data. Only one interaction term in CH₃F and the interaction force constants of the A₁ species in CH₂F₂ differ appreciably from the experimental ones. Using constraints from the ab initio studies we have improved the GVFF of CH₃F and CH₂F₂. It is shown that all comparable stretch-stretch interaction terms are of the same order of magnitude in the three molecules. The sign of all stretch/bend force constants are in accordance with those predicted by the hybrid orbital force field.     

电子回旋共振等离子体增强沉积氟化非晶碳薄膜的光学性质

用紫外可见光透射光谱(UV-VIS)并结合键结构的X射线光电子能谱(XPS)和红外谱(FTIR)分析,研究了电子回旋共振等离子体增强化学气相沉积法制备的氟化非晶碳薄膜的光吸收和光学带隙性质.在微波功率为140—700W、源气体CHF₃∶C₆H₆比例为1∶1—10∶1条件下沉积的薄膜,光学带隙在1.76—2.85eV之间.薄膜中氟的引入对吸收边和光学带隙产生较大的影响,吸收边随氟含量的提高而增大,光学带隙则主要取决于CF键的含量,是由于强电负 关键词： 氟化非晶碳薄膜 光吸收与光学带隙 电子回旋共振等离子体     

Electrochemical corrosion behaviors of a-C:H and a-C:NX:H films

The a-C:H and a-C:N_X:H films were deposited onto silicon wafers using radio frequency (rf) plasma enhanced chemical vapor deposition (PECVD) and pulsed-dc glow discharge plasma CVD, respectively. Raman spectroscopy and X-ray photoelectron spectroscopy (XPS) were used to characterize chemical nature and bond types of the films. The results demonstrated that the a-C:H film prepared by rf-CVD (rf C:H) has lower I_D/I_G ratio, indicating smaller sp² cluster size in an amorphous carbon matrix. The nitrogen concentrations of 2.9 at.% and 7.9 at.% correspond to carbon nitride films prepared with rf and pulse power, respectively.Electrochemical corrosion performances of the carbon films were investigated by potentiodynamic polarization test. The electrolyte used in this work was a 0.89% NaCl solution. The corrosion test showed that the rf C:H film exhibited excellent anti-corrosion performance with a corrosion rate of 2 nA cm⁻², while the carbon nitride films prepared by rf technique and pulse technique showed a corrosion rate of 6 nA cm⁻² and 235 nA cm⁻², respectively. It is reasonable to conclude that the smaller sp² cluster size of rf C:H film restrained the electron transfer velocity and then avoids detriment from the exchange of electrons.     

Simultaneous interaction of methyl radicals and atomic hydrogen with amorphous hydrogenated carbon films, as investigated with optical in situ diagnostics

Methyl radicals (CH₃) and atomic hydrogen (H) are dominant radicals in low-temperature plasmas from methane. The surface reactions of these radicals are believed to be key steps leading to deposition of amorphous hydrogenated carbon (a-C:H) films or polycrystalline diamond in these discharges. The underlying growth mechanism is studied, by exposing an a-C:H film to quantified radical beams of H and CH₃. The deposition or etching rate is monitored via ellipsometry and the variation of the stoichiometry is monitored via isotope labeling and infrared spectroscopy. It was shown recently that, at 320 K, methyl radicals have a sticking coefficient of 10^-4 on a-C:H films, which rises to 10^-2 if an additional flux of atomic hydrogen is present. This represents a synergistic growth mechanism between H and CH₃. From the interpretation of the infrared data, a reaction scheme for this type of film growth is developed: atomic hydrogen creates dangling bonds by abstraction of bonded hydrogen within a surface layer corresponding to the range of H in a-C:H films. These dangling bonds serve at the physical surface as adsorption sites for incoming methyl radicals and beneath the surface as radicalic centers for polymerization reactions leading to carbon–carbon bonds and to the formation of a dense a-C:H film. Received: 18 July 2000 / Accepted: 12 December 2000 / Published online: 3 April 2001     

Effect of H2 dilution on a-CN:H films deposited by hot-wire chemical vapor deposition

Hydrogenated amorphous carbon nitride (a-CN:H) thin films were deposited by hot-wire chemical vapor deposition (HWCVD) using the gas mixture of CH₄, NH₃ and H₂ precursor gases. The structural and electronic environments studies of H₂ diluted a-CN:H films were carried out by Raman spectroscopy and X-ray photoelectron spectroscopy. The nitrogen content increases while the total carbon contents decreases with increase in H₂ flow rate from 0 sccm to 20 sccm in the a-CN:H films. Moreover, the detail analysis of the carbon core orbital, valence band and hole states of a-CN:H were discussed with different H₂ flow rate.     

Structure and hardness of a-C:H films prepared by middle frequency plasma chemical vapor deposition

a-C:H films were prepared by middle frequency plasma chemical vapor deposition (MF-PCVD) on silicon substrates from two hydrocarbon source gases, CH₄ and a mixture of C₂H₂ + H₂, at varying bias voltage amplitudes. Raman spectroscopy shows that the structure of the a-C:H films deposited from these two precursors is different. For the films deposited from CH₄, the G peak position around 1520 cm⁻¹ and the small intensity ratio of D peak to G peak (I(D)/I(G)) indicate that the C-C sp³ fraction in this film is about 20 at.%. These films are diamond-like a-C:H films. For the films deposited from C₂H₂ + H₂, the Raman results indicate that their structure is close to graphite-like amorphous carbon. The hardness and elastic modulus of the films deposited from CH₄ increase with increasing bias voltage, while a decrease of hardness and elastic modulus of the films deposited from a mixture of C₂H₂ + H₂ with increasing bias voltage is observed.     

Deposition of hydrogenated amorphous carbon nitride films by dielectric barrier discharge plasmas

Hydrogenated amorphous carbon nitride (a-C:N:H) films were synthesized from CH₄/N₂, C₂H₄/N₂ and C₂H₂/N₂ mixtures using dielectric barrier discharge (DBD) plasmas. Atomic force microscopy (AFM), Fourier transform infrared spectroscopy (FTIR), X-ray photoelectron spectroscopy (XPS) were used to characterize the surface morphology, bonding structure, and composition of the a-C:N:H films. The influences of plasma parameters (discharge pressure in the range of 25-1000 Pa) and feed gases used on the composition and the structure of deposited films were systematically studied. The a-C:N:H films with the uniform surface structure were deposited by low-pressure DBD plasmas with various systems. Compared to the films deposited in C₂H₄/N₂ and C₂H₂/N₂ systems, the films deposited in the CH₄/N₂ system exhibit the relatively lower surface roughness and deposition rate. For all the films prepared in these three systems, increasing the discharge pressure leads to an increase in film surface roughness and deposition rate. Significant differences among the FTIR spectra of all deposited a-C:N:H films were also observed. Both FTIR and XPS spectra show that for all the films deposited in three different systems, increasing the N₂ fraction leads to a decrease in the H content of deposited a-C:N:H films and an increase in the N content. The properties of deposited films may change from those of polymerlike to diamond-like when the discharge pressure is increased. Correlations between the film properties and growth processes are discussed in this study.