煅烧温度对Cu掺杂ZnO纳米粉体的制备及发光性能的影响

在PVA溶液中制备ZnO∶Cu纳米粉体的前驱体,经过煅烧获得ZnO∶Cu纳米粉体,考察煅烧温度对制备过程及发光性能的影响。利用XRD、TEM分析了产物的结构和形貌,XRD分析结果表明,当煅烧温度高于500℃时,可以使PVA完全分解,制备出具有六角纤锌矿结构的ZnO∶Cu粉体。TEM结果表明,粉体呈球形,大小均匀,分散性好,平均粒径为20～25 nm。在342 nm波长光的激发下,在ZnO∶Cu的室温PL光谱中可以观察到两个中心波长位于458 nm和486 nm的较强的蓝光发射峰,经400℃煅烧处理的ZnO∶Cu纳米粉体的蓝光发射最强。煅烧后的ZnO∶Cu只有微弱的绿光发射(510～530 nm),Cu的掺杂使ZnO的绿光发射变为蓝光发射。蓝紫光的发射波长随煅烧温度的升高产生明显的红移,由300℃时的404 nm红移至600℃时的422nm,发射强度随温度升高先增大后减小。     

热处理温度对ZnO∶Al薄膜性能的影响

利用溶胶-凝胶技术在玻璃衬底上制备了ZnO∶Al薄膜,表征了薄膜的结构、光透过和光致发光特性,探讨了热处理温度对薄膜晶体结构和光学性质的影响.结果表明,在热分解温度400 ℃和退火温度600 ℃时,ZnO∶Al薄膜的C轴择优取向明显,透过率较高.在热处理温度400 ℃情况下,激发波长340 nm的光致发光谱中有三个发光中心,紫外发光强度随退火温度的升高先升高后下降,500 ℃时发光强度最强.其它两个发光峰的强度随退火温度的升高而降低甚至消失.激发波长不同,ZnO∶Al薄膜的发光中心和强度均发生变化.     

热处理温度对ZnO：Al薄膜性能的影响

利用溶胶-凝胶技术在玻璃衬底上制备了ZnO:Al薄膜,表征了薄膜的结构、光透过和光致发光特性,探讨了热处理温度对薄膜晶体结构和光学性质的影响.结果表明,在热分解温度400 ℃和退火温度600 ℃时,ZnO:Al薄膜的C轴择优取向明显,透过率较高.在热处理温度400 ℃情况下,激发波长340 nm的光致发光谱中有三个发光中心,紫外发光强度随退火温度的升高先升高后下降,500 ℃时发光强度最强.其它两个发光峰的强度随退火温度的升高而降低甚至消失.激发波长不同,ZnO:Al薄膜的发光中心和强度均发生变化.     

退火对ZnO:Al薄膜光致发光性能的影响

 采用溶胶-凝胶工艺在石英衬底上制备ZnO:Al（AZO）薄膜，通过不同温度的退火处理，研究了退火对AZO薄膜结构和光致发光特性的影响。XRD图谱表明：所制备的薄膜具有c轴高度择优取向，随着退火温度的升高，(002)峰的强度逐渐增强，同时(002)峰的半高宽逐渐减小,表明晶粒在不断增大。未退火样品的光致发光（PL）谱由361 nm附近的紫外带边发射峰和500 nm附近的深能级发射峰组成。样品经退火后，以500 nm为中心的绿带发射逐渐减弱，而带边发射强度有所增强,并且逐渐红移到366 nm附近，与吸收边移动的测试结果相吻合。对经过不同时间退火的样品分析表明，AZO薄膜的发光特性与退火时间也有很大关系，时间过短可见波段的发射较强，但时间过长会使晶粒发生团聚，导致紫外发射峰强度减弱。     

CeOx与ZnO纳米复合粉体的制备及其发光性能

通过溶胶-凝胶法制备CeOx／ZnO纳米复合粉体,并对其结构和光致发光特性进行了研究。发现500℃烧结出的复合粉体在502nm处的绿光发射同纯ZnO的相比有显著的增强;600℃烧结的样品在603nm出现新的发光峰。通过XRD和XPS分析认为荧光增强的主要原因同粉体中铈主要以Ce^3 形式存在有关,新的发光峰可能来源于ZnO／CeO2界面处形成的新的能级跃迁。     

退火温度对溶胶-凝胶法制备Na掺杂 ZnO薄膜的结构和光学特性的影响

采用溶胶-凝胶旋涂法在Si(100)衬底上制备Na掺杂ZnO薄膜,退火温度分别为873,973,1 073 K。研究了退火温度对Na掺杂ZnO薄膜形貌、微观结构和光学性能的影响。室温光致发光谱显示,在973 K下退火的样品具有中心位于361 nm处尖锐而强的紫外发光峰,在388,425 nm处各有一个比较弱的紫色和蓝色发光峰,在可见光范围内发光峰的强度很弱。     

退火及超声处理对ZnO薄膜结构和发光特性的影响

 利用对向靶射频磁控溅射系统在Si（100）衬底上制备了ZnO薄膜，并对其进行了退火和超声处理。采用XRD,AFM和光致发光谱对其结构、表面形貌和性能进行了分析。结果表明：沉积态ZnO薄膜（002）择优取向稍差,尺寸较小,表面粗糙度较大。随退火温度的升高，颗粒粒径增大，样品的取向性和结晶度都明显变好，应力状态由压应力转变为张应力,粗糙度降低。超声处理缓解了薄膜中的张应力，晶粒尺寸更趋增大;用波长为280 nm的激发光激发薄膜时，沉积态薄膜无发光峰存在;随着退火温度升高，出现了一个378 nm的紫外峰和一个398 nm的紫峰;紫外峰峰值强度随退火温度升高不断增强，而紫峰的峰位随退火温度升高基本不发生变化，峰值强度增强;700 ℃退火后的薄膜经超声处理后，发光谱中出现了峰值波长为519 nm的绿色发光带。     

ZnO/SiO2 复合薄膜的光学性能

采用溶胶-凝胶法在玻璃衬底上制备ZnO/SiO₂复合薄膜,分别用XRD、TEM、SEM对样品的结构和形貌进行表征,并研究了不同ZnO含量对复合薄膜透过率及荧光特性的影响。结果表明,样品经500 ℃退火处理生成了SiO₂和ZnO,其晶粒尺寸为18.7 nm,薄膜具有双层结构。复合薄膜的透过率随着其中ZnO含量的增加而降低,禁带宽度减小,光学吸收边红移。样品在355 nm波长激发下产生了384 nm的紫外发射峰和440 nm的蓝光发射带,并随ZnO含量的增加而增强,它们分别来自ZnO的电子-空穴复合发光和缺陷发光,及ZnO/SiO₂复合薄膜双层结构的缺陷发光。     

超声处理对ZnO薄膜光致发光特性的影响

对于结晶状态好的ZnO薄膜，测量了其光致发光(PL)光谱，发射光谱中只发现了峰值波长约389 nm的近紫外光.样品进行超声处理后，发射谱中不仅观察到近紫外峰，又观察到波长约508 nm的绿光峰.绿光峰的强度比近紫外光的强度强得多，且近紫外峰红移.进一步的热处理使绿光峰大大增强.超声处理改变了ZnO薄膜的质量和结晶状态，使晶格中产生氧空位.处理过程中的热效应使得薄膜晶格振动加剧.当晶格振动加剧到一定程度，晶格中的氧脱离格点形成氧空位.510 nm左右的绿色发光峰是ZnO晶体中的氧空位产生的.薄膜的温度越高， 关键词： ZnO薄膜 超声 光致发光     

热处理对ZnO∶Zn荧光薄膜结晶性能的影响

用热处理方法对电子束蒸发制备的ZnO∶Zn荧光薄膜分别进行400,600℃退火处理。采用X射线衍射、X射线光电子能谱、扫描电子显微镜、光致发光光谱等方法,表征了ZnO∶Zn荧光薄膜的结构、成分、形貌、发光性能。在ZnO∶Zn荧光薄膜的X射线衍射谱和扫描电子显微镜照片中,可以看出经退火处理后结晶状况大大改善,多晶结构趋于规则,晶粒更加均匀且膜层结构更加致密。在ZnO∶Zn荧光薄膜的光致发光谱中,检测到490 nm处发光峰,认为一价氧空位(VO)充当发光中心,且薄膜的光致发光强度受热处理温度的影响很大。实验表明随着退火温度的升高,薄膜的结晶程度提高,弥补了薄膜晶体表面的表面缺陷,薄膜的发光性能不断提高。     

Effect of post-thermal annealing on the structural and optical properties of ZnO thin films prepared from a polymer precursor

ZnO thin films were synthesised by a new method which uses polyvinyl alcohol (PVA) as the polymer precursor. The films are annealed at different temperatures and for different annealing times. The structural parameters, like grain size, lattice constants, optical band gap, and Urbach energy, depend on the annealing temperature and time. All the films possess tensile strain, which relaxes as the annealing temperature and time increase. The photoluminescence (PL) spectra contain only ultraviolet (UV) peaks at low temperature, but as the annealing temperature and time increase, we observe peaks at the blue and green regions with a variation in the intensities of these peaks with annealing temperature and time.     

球形ZnO的微波辅助合成及光谱研究

以Zn(NO₃)₂为原料,CO(NH₂)2为沉淀剂,加入表面活性剂甲基丙烯酸甲酯,经微波加热制备获得颗粒尺度为亚微米级的ZnO.采用X射线衍射(XRD)、扫描电镜(SEM)研究了制备条件对样品结构、形貌的作用;PL方法讨论了其荧光发光光谱.发现采用微波加热法获得的ZnO呈球形,尺度在100nm左右,相比较,传统高温加热获得的样品呈c轴优先取向的短棒状.讨论认为,由于微波辅助方法能够使前驱物温度梯度变化小,表面Zn²⁺,O²⁺析出均匀,因此有助于获得球形的粉末粒子.     

Effect of post thermal annealing on the structural and optical properties of ZnO thin films prepared from polymer precursor

ZnO thin films were synthesised by a new method which uses polyvinyl alcohol (PVA) as polymer precursor. The films are annealed at different temperatures and for different annealing times. The structural parameters, like grain size, lattice constants, optical band gap, and Urbach energy, depend on the annealing temperature and annealing time. All the films possess tensile strain which relaxes as the annealing temperature and the annealing time increases. The photoluminescence (PL) spectra contain only ultraviolet (UV) peaks at low temperature, but as the annealing temperature and time increase we observe peaks at blue and green regions with variation of the intensities of these peaks with annealing temperature and annealing time.     

脉冲激光沉积方法制备ZnO薄膜生长参量对发光特性的影响

用脉冲激光沉积（PLD）方法在Si（111）衬底上制备了ZnO薄膜。以325nmHe-Cd激光器为光源对薄膜进行了荧光光谱分析,用X射线衍射仪（XRD）和原子力显微镜（AFM）分别对薄膜的结构和形貌进行了分析。脉冲激光沉积方法的主要生长参量为氧压、激光重复频率、生长温度和激光能量。通过控制这些参量变量,研究了这些参量对ZnO薄膜发光特性的影响,得到了用于紫外发光的ZnO薄膜生长的优化条件：发现在温度为650℃左右、氧压50Pa左右、频率5Hz左右的范围内能得到半峰全宽较窄,强度较大的紫外发光峰。分析认为紫外峰主要是由激子辐射复合发光形成的,绿光带主要和Ozn的存在密切相关,氧空位是蓝光发射的重要原因。     

Effects of high-dose Ge ion implantation and post-implantation annealing on ZnO thin films

This paper reports that ion implantation to a dose of 1×10¹⁷ ions/cm² was performed on c-axis-orientated ZnO thin films deposited on (0001) sapphire substrates by the sol-gel technique. After ion implantation, the as-implanted ZnO films were annealed in argon ambient at different temperatures from 600-900℃. The effects of ion implantation and post-implantation annealing on the structural and optical properties of the ZnO films were investigated by x-ray diffraction (XRD), photoluminescence (PL). It was found that the intensities of (002) peak and near band edge (NBE) exitonic ultraviolet emission increased with increasing annealing temperature from 600-900℃. The defect related deep level emission (DLE) firstly increased with increasing annealing temperature from 600- 750℃, and then decreased quickly with increasing annealing temperature. The recovery of the intensities of NBE and DLE occurs at \sim 850℃ and \sim 750℃ respectively. The relative PL intensity ratio of NBE to DLE showed that the quality of ZnO films increased continuously with increasing annealing temperature from 600 - 900℃.     

Photoluminescence of ZnO films prepared by r.f. sputtering on different substrates

Polycrystalline ZnO films with good orientation were deposited on sapphire, quartz, Si and 7059 glass substrates by r.f. magnetron sputtering. A strong UV photoluminescence (PL) peak (located at 356 nm) and a weak blue emission peak (located at 446 nm) were observed at room temperature (RT) for the films deposited on sapphire, quartz and Si substrates when excited with 270 nm light. For the films prepared on Corning 7059 glass, only a strong 446 nm blue emission peak was found, and the PL intensity decreased with increasing oxygen pressure during films deposition. The intensity of the UV emission increased 7 and 14 times, respectively, for the films on sapphire and quartz substrates after high temperature annealing in vacuum. The UV emission originates from the inter-band transition of electrons and the blue emission is due to transition of electrons from the shallow donor level of the oxygen vacancies to the valence band.     

不同衬底上的ZnO薄膜紫外光致发光

用射频磁控溅射法在蓝宝石、硅和石英衬底上沉积出具有好的择优取向的多晶ZnO薄膜. 在270 nm波长的光激发下室温下可观察到显著的紫外光发射（波长为356 nm）和较弱的蓝光发射（波长为446 nm）. 经高温退火后薄膜的结晶质量显著提高, 在蓝宝石、石英衬底上沉积的薄膜，其积分发光强度分别增加了7倍和14倍.而硅衬底上的膜发光强度增强不太显著.紫外光发射源于电子的带间跃迁，而蓝光发射是由电子从氧空位浅施主能级到价带顶的跃迁引起的. 关键词： ZnO薄膜 射频磁控溅射 紫外发光 退火     

Dominant ultraviolet-blue photoluminescence of ZnO embedded into synthetic opal

The temperature-dependent photoluminescence (PL) characteristics of zinc oxide (ZnO) embedded into the voids of synthetic opal were studied. ZnO was infiltrated into opal from aqueous solution with zinc nitrate precursor followed by thermal annealing. The PL spectra of the ZnO powder exhibit very high and broad emission peaks in the green region due to crystal defects, such as oxygen vacancies and zinc ion interstitials. In contrast to the PL spectra of ZnO powder, nanocrystals of ZnO embedded into the voids of FCC packed opal matrix exhibit dominant ultraviolet (UV)-blue and rapidly decreasing green PL emissions with decreasing temperature. The temperature-dependent PL characteristics show that the green band suppression in the ZnO nanocrystals is due to the influence of photonic crystal. The infiltration of nanoparticles into synthetic opal may be used for the fabrication of polycrystalline ZnO with dominant UV-blue PL. These results indicate that the luminescent materials embedded into photonic crystal may be promising for the fabrication of the RGB pixels in full-color displays.     

退火温度对ZnO薄膜结构和发光特性的影响

采用反应射频磁控溅射法在 Si(100)基片上制备了高c轴择优取向的ZnO薄膜，研究了退火温度对ZnO薄膜的晶粒尺度、应力状态、成分和发光光谱的影响，探讨了ZnO薄膜的紫外发光光谱和可见发光光谱与薄膜的微观状态之间的关系.研究结果显示,在600—1000℃退火温度范围内，退火对薄膜的织构取向的影响较小，但薄膜的应力状态和成分有比较明显的变化.室温下光致发光光谱分析发现，薄膜的近紫外光谱特征与薄膜的晶粒尺度和缺陷状态之间存在着明显的对应关系；而近紫外光谱随退火温度升高所呈现的整体峰位红移是各激子峰相对比例变 关键词： ZnO薄膜 退火 光致发光 射频反应磁控溅射 可见光发射