退火及超声处理对ZnO薄膜结构和发光特性的影响

 利用对向靶射频磁控溅射系统在Si（100）衬底上制备了ZnO薄膜，并对其进行了退火和超声处理。采用XRD,AFM和光致发光谱对其结构、表面形貌和性能进行了分析。结果表明：沉积态ZnO薄膜（002）择优取向稍差,尺寸较小,表面粗糙度较大。随退火温度的升高，颗粒粒径增大，样品的取向性和结晶度都明显变好，应力状态由压应力转变为张应力,粗糙度降低。超声处理缓解了薄膜中的张应力，晶粒尺寸更趋增大;用波长为280 nm的激发光激发薄膜时，沉积态薄膜无发光峰存在;随着退火温度升高，出现了一个378 nm的紫外峰和一个398 nm的紫峰;紫外峰峰值强度随退火温度升高不断增强，而紫峰的峰位随退火温度升高基本不发生变化，峰值强度增强;700 ℃退火后的薄膜经超声处理后，发光谱中出现了峰值波长为519 nm的绿色发光带。

Influence of annealing and supersonic treatments on structure and photoluminescence of ZnO films

A series of ZnO thin films were deposited on silicon (100) substrate by facing target radio frequency magnetron sputtering system, and were annealed and supersonically treated. The samples were characterized by X-ray diffraction(XRD), atomic force microscopy(AFM), and photoluminescence(PL) spectrum. XRD results show that the as-deposited film has less preferential C-axis orientation, while increasing the annealing temperature gets preferential C-axis orientation better. The grain size of the sample becomes larger and the residual stress changes from compress stress to tensile stress with the increase of the annealing temperature. The PL spectrums indicate that there is no emission for the as-deposited film at room temperature. As the annealing temperature increases, both a 378 nm ultraviol