Controlled Formation of β-Si3N4 on Native Oxidized Silicon Wafers in Ammonia Flow

Crystallography Reports - The formation of β-Si3N4 for subsequent growth of AlGaN and GaN heterostructures of silicon wafers has been studied. It is established that the native oxide layer...     

Identification of potential inhibitors of coronavirus hemagglutinin-esterase using molecular docking,molecular dynamics simulation and binding free energy calculation

Molecular Diversity - The pandemic outbreak of the Corona viral infection has become a critical global health issue. Biophysical and structural evidence shows that spike protein possesses a high...     

Effect of Mechanical Stress on the Splitting of Spin Sublevels in 4H-SiC

JETP Letters - The effect of static mechanical strain on the splitting of spin sublevels of color centers based on spin 3/2 silicon vacancies in silicon carbide at room temperature has been shown....     

Two-Dimensional Excitons in Multiple GaN/AlN Monolayer Quantum Wells

JETP Letters - The decay kinetics of low-temperature exciton photoluminescence in a heterostructure with multiple GaN/AlN monolayer quantum wells, which is prepared by molecular beam epitaxy, is...     

Structural Specific Features of Solid Solutions NdxGd1 – xCr3(BO3)4

Optics and Spectroscopy - Optical investigations of crystals of solid solutions NdxGd1 – xCr3(BO3)4, 0.01 ≤ x ≤ 1, have been performed. Absorption spectra in the...     

Role of Conformational Changes of Hexameric Bacterial Uridine Phosphorylases in Substrate Binding

Crystallography Reports - Crystals of mutants of uridine phosphorylase from Shewanella oneidensis MR-1 at the active-site threonine residue were obtained, and the three-dimensional structures of...     

USING EIGENMODULI AND EIGENSTATES TO EVALUATE THE POSSIBILITY OF MARTENSITIC PHASE TRANSFORMATIONS

Journal of Applied Mechanics and Technical Physics - The possibility of phase transitions (martensitic transformations) in shape-memory alloys is evaluated using the concept of eigenmoduli...     

极大3限制边连通二部图的充分条件

设G=(V,E)是一个连通图.称一个边集合S■E是一个k限制边割,如果G-S的每个连通分支至少有k个顶点.称G的所有k限制边割中所含边数最少的边割的基数为G的k限制边连通度,记为λ_k(G).定义ξ_k(G)=min{[X,■]:|X|=k,G[X]连通,■=V(G)\X}.称图G是极大k限制边连通的,如果λ_k(G)=ξ_k(G).本文给出了围长为g>6的极大3限制边连通二部图的充分条件.     

Lower Bounds for the Robustness of Multilevel Coherence

International Journal of Theoretical Physics - Quantum coherence, coming from quantum superposition, occupies a significant position in the field of physics. We put forward a lower bound of the...     

Cumulative $${\pi}$$ -Mesons in $${}^{{12}}{C}{+}{}^{{9}}$$ Be-Interactions at 3.2 GeV/Nucleon

Physics of Atomic Nuclei - In the FRAGM experiment at the heavy-ion accelerator $$-$$ accumulator complex ITEP $$-$$ TWA, yields of cumulative charged $$\pi$$ mesons have been measured in a...