Effect of a Thermal-Vacuum Treatment and X-Ray Radiation on the Morphology and Electrical Properties of Titanium Oxide Nanocoatings

Russian Journal of Applied Chemistry - Effect of a simultaneous thermal treatment at 480°C and X-ray radiation (irradiation dose 10?3 C/kg (～4 R) in a vacuum (residual pressure...     

Role of Conformational Changes of Hexameric Bacterial Uridine Phosphorylases in Substrate Binding

Crystallography Reports - Crystals of mutants of uridine phosphorylase from Shewanella oneidensis MR-1 at the active-site threonine residue were obtained, and the three-dimensional structures of...     

Electrodeposited paint-and-varnish nickel–polymer coatings

Specific features of preparation of paint-and-varnish nickel–polymer coatings by joint cathodic electrodeposition of an amine-containing oligomeric electrolyte and nickel were studied. The coatings obtained exhibit layer-by-layer heterogeneity, with the lowest layer constituted by an intermetallic compound of nickel with iron. The coatings are characterized by higher degree of cross-linking compared to the polymer coatings without nickel. A paint-and-varnish formulation based on a nickel–polymer film-forming agent was developed for electrodeposition of corrosion- and wear-resistant coatings.     

Epitaxial growth of cadmium telluride films on silicon with a buffer silicon carbide layer

An epitaxial 1–3-μm-thick cadmium telluride film has been grown on silicon with a buffer silicon carbide layer using the method of open thermal evaporation and condensation in vacuum for the first time. The optimum substrate temperature was 500°C at an evaporator temperature of 580°C, and the growth time was 4 s. In order to provide more qualitative growth of cadmium telluride, a high-quality ~100-nm-thick buffer silicon carbide layer was previously synthesized on the silicon surface using the method of topochemical substitution of atoms. The ellipsometric, Raman, X-ray diffraction, and electron-diffraction analyses showed a high structural perfection of the CdTe layer in the absence of a polycrystalline phase.

     

Protected optical line coding based on multiple-valued logics

Multiple-valued logic functions given by the Allen-Givone algebra are proposed for use in optical nonquantum communication channels as tools for generating a set of secret keys of very high dimension.     

The new lead vanadylphosphate Pb2VO(PO4)2

The structure of dilead vanadium oxide bis­(phosphate) contains corrugated layers formed by VO₅ square pyramids oriented in opposite directions in a chessboard fashion. The pyramids are connected by tetra­hedral PO₄ groups. The layers are separated by the Pb atoms and isolated PO₄ tetra­hedra.