Effect of Mechanical Stress on the Splitting of Spin Sublevels in 4H-SiC

JETP Letters - The effect of static mechanical strain on the splitting of spin sublevels of color centers based on spin 3/2 silicon vacancies in silicon carbide at room temperature has been shown....     

Aluminum nitride substrates for ultraviolet light-emitting diode structures

Currently, wafers of aluminum nitride cut from bulk aluminum nitride crystals (AlN) grown by sublimation are considered promising substrates for obtaining light-emitting diode structures based on nitrides of the third group. In this study, the structural characteristics and electrical properties of AlN, as a prospective substrate material for light-emitting diode heterostructures based on AlGaN/GaN, were investigated. The substrate working surface ((0001) plane, Al-polar) was specifically prepared for epitaxial growth using chemical-mechanical polishing. The surface roughness (“epi-ready”), as estimated by atomic force microscopy, did not exceed 0.3 nm.     

6H–SiC Nanoparticles Integrated with an Atomic Force Microscope for Scanning Quantum Sensors

JETP Letters - We fabricate a quantum magnetic field sensor based on the silicon vacancy centers in 6H–SiC using atomic force microscopy technique. The quantum sensing is based on optically...     

Influence of neutron irradiation on etching of SiC in KOH

The effect of reactor neutron irradiation on the etch rate of SiC in potassium hydroxide has been studied. In the case of high irradiation doses (10¹⁹–10²¹ cm^–2), the etch rate of silicon carbide has been shown to drastically rise, especially in the [0001]Si direction. This considerably mitigates the orientation anisotropy of polar face etching. After high-temperature annealing (up to 1200–1400°C), a higher etch rate of irradiated crystals persists. The results have been explained by the high concentration of radiation-induced (partially clustered) defects they contain.

     

Generation of Optically Addressable Spin Centers in Hexagonal Boron Nitride by Proton Irradiation

Physics of the Solid State - The possibility of creating defects with spin-dependent fluorescence in a van der Waals material, namely, hexagonal boron nitride (hBN), by irradiating the latter with...