射频溅射法制备3C-SiC和4H-SiC薄膜

利用射频溅射法在Si衬底上制备了SiC薄膜，并利用x射线衍射（XRD）和红外（IR）吸收谱对薄膜的结构、成分及化学键合状态进行了分析.XRD结果表明，低温制备的SiC薄膜为非晶相，而在高温下（＞800℃），薄膜呈现4HSiC和3CSiC结晶相.IR谱显示，溅射制备薄膜的吸收特性主要为Si—C键的吸收.此外，还利用原子力显微镜对薄膜的表面形貌进行了研究，并研究了样品的场发射特性. 关键词： 射频溅射 SiC薄膜 结构 表面形貌 场发射

Study of 3C-SiC and 4H-SiC films deposited using RF sputtering method

SiC films were deposited on Si(111) substrates by radio-frequency (RF) sputtering method. High-resolution x-ray diffraction and infrared (IR) absorption spectroscopy were used to investigate the composition and bonding structures of the SiC films. The analysis indicated that the samples deposited at high temperatures (＞800℃) were found to consist of 4HSiC or 3CSiC crystallites, while the amorphous films were obtained at lower temperatures. IR spectra suggested that the main absorption property was caused by Si—Cb ondings. Furthermore, atomic force microscopy was used to examine the surface morphology of the SiC films and the field emission properties of the films were studied.