Growth of β-Ga2O3 nanorods by ammoniating Ga2O3/V thin films on Si substrate

This paper reports that/3-Ga2O3 nanorods have been synthesized by ammoniating Ga2O3 films on a V middle layer deposited on Si（111） substrates. The synthesized nanorods were confirmed as monoclinic Ga2O3 by x-ray diffraction,Fourier transform infrared spectra. Scanning electron microscopy and transmission electron microscopy reveal that the grown β-Ga2O3 nanorods have a smooth and clean surface with diameters ranging from 100 nm to 200 nm and lengths typically up to 2μm. High resolution TEM and selected-area electron diffraction shows that the nanorods are pure monoclinic Ga2O3 single crystal. The photoluminescence spectrum indicates that the Ga2O3 nanorods have a good emission property. The growth mechanism is discussed briefly.     

Transformation from β-Ga2O3 to GaN Nanowires via Nitridation

Element doping is an important way to modify the properties of semiconductor materials. In our previous work, it was found that nitrogen-doping in β-Ga2O3 nanowires can induce a novel luminescence emission （around 740 nm） caused by generation of acceptor levels at the middle of the band gap of the β-Ga2O3 nanowires. Here we report that further heavy doping of nitrogen can transform the β-Ga2O3 nanowires completely into wurtzite structured GaN nanowires. Transmission electron microscopy （TEM）, x-ray diffraction （XRD） and Raman spectrum are used to evaluate the transition process. Both XRD and Raman analysis reveal that the monoclinic β-Ga2O3 nanowires start phase transformation at a temperature around 850℃ towards wurtzite structured GaN. Our results will be very helpful to profound our understanding of the doping induced effects and phase transformation in semiconductor compounds.     

Fabrication and magnetic properties of Ni0.50.5Zn0.5Fe2O4 nanofibres by electrospinning

NiZn ferrite/polyvinylpyrrolidone composite fibres were prepared by sol–gel assisted electrospinning.Ni0.5Zn0.5Fe2O4 nanofibres with a pure cubic spinel structure were obtained subsequently by calcination of the composite fibres at high temperatures.This paper investigates the thermal decomposition process,structures and morphologies of the electrospun composite fibres and the calcined Ni0.5Zn0.5Fe2O4 nanofibres at different temperatures by thermogravimetric and differential thermal analysis,x-ray diffraction,Fourier transform infrared spectroscopy and field emission scanning electron microscopy.The magnetic behaviour of the resultant nanofibres was studied by a vibrating sample magnetometer.It is found that the grain sizes of the nanofibres increase significantly and the nanofibre morphology gradually transforms from a porous structure to a necklace-like nanostructure with the increase of calcination temperature.The Ni0.5Zn0.5Fe2O4 nanofibres obtained at 1000 C for 2 h are characterized by a necklace-like morphology and diameters of 100–200 nm.The saturation magnetization of the random Ni0.5Zn0.5Fe2O4 nanofibres increases from 46.5 to 90.2 emu/g when the calcination temperature increases from 450 to 1000 C.The coercivity reaches a maximum value of 11.0 kA/m at a calcination temperature of 600 C.Due to the shape anisotropy,the aligned Ni0.5Zn0.5Fe2O4 nanofibres exhibit an obvious magnetic anisotropy and the ease magnetizing direction is parallel to the nanofibre axis.     

High-Pressure and High-Temperature Behaviour of Gallium Oxide

High-temperature and high-pressure behaviours of β-Ga2O3 powder are studied by energy-dispersive x-ray diffrac- tion in a diamond anvil cell （DAC）. It is found that the phase transition from the monoclinic β-Ga2O3 to the trigonal α-Ga2O3 occurs at around 19.2 GPa under cold compression. By heating the powder to 2000 K at 30 GPa, we confirm that α-Ga2O3 is the most stable structure at the high pressure. Furthermore, the structural transition from β-Ga2O3 to α-Ga2O3 is irreversible. After laser heating, the recrystallized Ga2O3 has a preferable （012） orientation. This interesting behaviour is also discussed.     

Photoluminescence of silicone oil treated by fluorocarbon plasma

We investigated photoluminescence characteristics of silicone oils treated by C2F6 and CHF3 plasma. The silicone oil treated by the C2F6 plasma emitted a white light mainly composed of 415 nm, 469 nm, and 554 nm emissions, while that treated by the CHF3 plasma emitted a pink light (415 nm). Fourier transformed infrared spectroscopy and Raman spectroscopy studies showed that the photoluminescence was correlated with the Si-C bond, the carbon-related defects and the oxygen vacancies. It was suggested that the light emitting at 554 nm was related to the Si-C bond and the carbon-related defects, while the pink emission at 415 nm was related to the oxygen vacancies.     

Structure and Photoluminescence of Polycrystalline MgxZn1-xO Films

Different photoluminescence （PL） spectra are observed for rf magnetron sputtered polycrystalline Mg0.25Zn0.75O and Mg0.37Zn0.63O films on silicon substrates when excited by different wavelengths. When the excitation wavelength is 280nm, a UV emission peak at 370nm and a blue peak at 462nm are generated for the Mg0.25Zn0.75O film, and those two peaks for the Mg0.37Zn0.63O film shift to 366nm and 466nm, respectively. The wavelengths of the PL peaks are related to the excitation wavelength. The stronger peak is obtained in the blue band due to a large number of oxygen vacancies caused by excess Zn and Mg atoms, while the weaker peak is obtained in the ultraviolet band.     

White Emitting ZnS Nanocrystals： Synthesis and Spectrum Characterization

Spherical organic-bonded ZnS nanocrystals with 4.0 4-0.2 nm in diameter are synthesized by a liquid-solid-solution method. The photoluminescence spectrum of sample （[S^2-]/[Zn^2＋] = 1.0） shows a strong white emission with a peak at 490nm and - 170 nm full widths at half maximum. By Gauss fitting, the white emission is attributed to the overlap of a blue emission and a green-yellow emission, originating from electronic transitions from internal S^2- vacancies level to valence band and to the internal Zn^2＋ vacancy level, respectively. After sealingZnS nanocrystals onto InGaN chips, the device shows CIE coordinates of （0.29,0.30）, which indicates their potential applications for white light emitting diodes.     

Spectroscopic characterization of Yb:Sc2O3 transparent ceramics

Yb：Sc2O3 transparent ceramics are fabricated by a conventional ceramic process and sintering in H2 atmosphere. The room-temperature spectroscopic properties are investigated, and the Raman spectrum shows an obvious vibration characteristic band centred at 415 cm-1. There are three broad absorption bands around 891, 937, and 971 nm, respectively. The strongest emission peak is centred at 1.04 μm with a broad bandwidth （11 nm） and an emission cross-section of 1.8×10^-20 cm^2. The gain coefficient implies a possible laser ability in a range from 990 nm to 1425 nm. The energy-level structure shows that Yb：Sc2O3 ceramics have large Stark splitting at the ground state level due to their strong crystal field. All the results show that Yb：Sc2O3 transparent ceramics are a promising material for short pulse lasers.     

Vacuum Annealing Induced Room-Temperature Ferromagnetism in Co0.1Ti0.9O2-δ Films Prepared by Sol-Gel Method

The Co-doped TiO2 films （Co0.1Ti0.9O2-δ） are prepared on silicon substrates by sol-gel method and post annealing. TheCo0.1Ti0.9O2-δ film annealed in air is non-ferromagnetic at room temperature. After further annealed in a vacuum, the room-temperature ferromagnetism （RTFM） is observed. Experimental evidences show that the RTFM in the Co0.1Ti0.9O2-δ film may come from the Co-doped TiO2 matrix and is related to the oxygen vacancies created by vacuum annealing.     

Improving luminescent property of SrIn2 O4 :Eu3+ by co-doped A+ （A = Li, Na, K） or Sm3+

A series of SrIn2 O4 :Eu3+ phosphors are synthesized by a high temperature solid-state method, and their luminescent properties are investigated. They can be excited by 395-nm radiation, and produce red emission (619 nm); however, they have a low absorption of near-ultraviolet light with the wavelength of 400nm-405 nm. When co-doped with A+ (A=Li, Na, K), the emission intensity of SrIn2O4 :Eu3+ is significantly enhanced, but its emission and excitation spectral profile is unchanged. With co-doping Sm3+ , not only is the emission intensity of SrIn2 O4 :Eu3+ enhanced, but also the absorption is broadened and strengthened in the range of 400 nm-405nm. The effect of Sm3+ -doped content on the emission intensity of SrIn2O4 :Eu3+ , Sm3+ is investigated, and the optimal Sm3+ content is 0.02 mol.     

Structural Characteristics and Photoluminescence of Zinc Oxide Nanocrystals

We have prepared zinc oxide nanocrystals using a new type of solid-state reaction.The nanosized grains were obtained by changing the heat treatment temperature and the sizes were determined to be from 10 to 42 nm.The lattice vibrational Raman spectra were measured and assigned at different grain sizes.We observed a strong visible emission centred at 580 nm in the nanosized ZnO at room temperature.We have investigated the photoluminescence properties under different grain sizes after annealing.The weakening of the luminescence is attributed to the decrease of intrinsic structural defects,mainly,oxygen vacancies and the increase of the grain size in the nanocrystals.     

Ultraviolet and Deep-Ultraviolet Emissions from c-MgxZn1-xO/MgO Ultrathin Multilayer Heterostructures

Cubic phase MgxZn1-x O/MgO multilayer heterostructures （c-Mgx Zn1-xO/MgO MHs） are grown on Si（100） and quartz substrates by reactive electron beam evaporation at low temperature （250℃）. Cross-sectional morphology observations by field-emission scanning electron microscopy show the legible interfaces of c-MgxZn1-x O/MgO MHs. X-ray diffraction demonstrates that c-MgxZn1-xO/MgO MHs are of highly （100）-oriented. Optical trans- mission investigations of c-Mgx Zn1-x O/MgO MHs on quartz substrates reveal the coexistence of the two phases, c-MgxZn1-xO and MgO. Photoluminescence examination indicates the emergence of deep-ultraviolet emission centred at about 290nm along with the blue shift of the ultraviolet emission from 405nm to 39Gnm when the nominal thickness of c-MgxZn1-xO well layers of MHs is diminished to 3nm, which is probably originated from quantum confinement effect.     

Preparation and optical properties of poly（vinylidene difluoride）/（Y0.97Eu0.03）2O3 rare-earth nanocomposite

In this letter, poly（vinylidene difluoride） （PVDF）/（Y0.97Eu0.03）2O3 rare-earth nanocomposites were prepared by a simple co-precipitation method, and their morphology, structure, and optical properties were investigated. The scanning electron microscope （SEM） images showed that the （Y0.97Eu0.03）2O3 rare- earth nanoparticles formed 50 nm - 2 μm aggregates in PVDF matrices. X-ray diffraction （XRD） curves indicated the incorporation and structure preserving of （Y0.97Eu0.03）2O3 nanoparticles in PVDF matrices. Photoluminescence （PL） spectra of the nanocomposite showed a characteristic red light emission at 612 nm, which was attributed to the intrinsic emission of （Y0.97Eu0.03）2O3 nanoparticles. Optical band gap （Eg） of the nanocomposite exhibited a decreasing trend with the increase of （Y0.97Eu0.03）2O3 content in PVDF matrices within the experimental dosage range.     

Defect types and room temperature ferromagnetism in N-doped rutile TiO2single crystals

The magnetic properties and defect types of virgin and N-doped TiO2 single crystals are probed by superconducting quantum interference device （SQUID）, X-ray photoelectron spectroscopy （XPS）, and positron annihilation analysis （PAS）. Upon N doping, a twofold enhancement of the saturation magnetization is observed. Apparently, this enhancement is not related to an increase in oxygen vacancy, rather to unpaired 3d electrons in Ti3＋, arising from titanium vacancies and the replacement of O with N atoms in the futile structure. The production of titanium vacancies can enhance the room temperature ferromagnetism （RTFM）, and substitution of O with N is the onset of ferromagnetism by inducing relatively strong ferromagnetic ordering.     

Spectroscopic characterization of Yb:Sc₂O₃ transparent ceramics

Yb:Sc2O3 transparent ceramics are fabricated by a conventional ceramic process and sintering in H2 atmosphere. The room-temperature spectroscopic properties are investigated, and the Raman spectrum shows an obvious vibration characteristic band centred at 415 cm 1 . There are three broad absorption bands around 891, 937, and 971 nm, respectively. The strongest emission peak is centred at 1.04 μm with a broad bandwidth (11 nm) and an emission cross-section of 1.8×10 20 cm 2 . The gain coefficient implies a possible laser ability in a range from 990 nm to 1425 nm. The energy-level structure shows that Yb:Sc 2 O 3 ceramics have large Stark splitting at the ground state level due to their strong crystal field. All the results show that Yb:Sc2O3 transparent ceramics are a promising material for short pulse lasers.     

Improvement in electroluminescence performance of n-ZnO/Ga_2O_3 /p-GaN heterojunction light-emitting diodes

n-ZnO/p-GaN heterojunction light-emitting diodes with and without a Ga2O3 interlayer are fabricated. The electroluminescence （EL） spectrum of the n-ZnO/p-GaN displays a single blue emission at 430 nm originating from GaN, while the n-ZnO/Ga2O3/p-GaN exhibits a broad emission peak from ultraviolet to visible. The broadened EL spectra of n-ZnO/Ga2O3/p-GaN are probably ascribed to the radiative recombination in both the p-GaN and n-ZnO, due to the larger electron barrier （ΔEC=1.85 eV） at n-ZnO/Ga2O3 interface and the much smaller hole barrier （ΔEV=0.20 eV） at Ga2O3/p-GaN interface.     

Growth and optical properties of Cr~（3＋）-doped CdWO_4 single crystals

A high-quality Cr 3+:CdWO4 single crystal at a size of approximatelyΦ25×80 mm is grown using the Bridgman method with CdO,WO3,and Cr2O3 as raw materials and their molar ratio of 100:100:0.5.The temperature gradient of solid-liquid interface at growth is approximately 50?C/cm and the growth rate is 0.05 mm/h.The X-ray diffraction(XRD),absorption,excitation,and emission spectra of different parts of the as-grown and O2-annealed crystals are investigated.Two strong broad optical absorption bands of about 472 and 708 nm are observed,and they are associated with the transitions 4 A2→ 4 T1 and 4 A2→ 4 T2.The weak 4 T2→ 2 E transition(the R-line)at 632 nm is also observed.The crystal-field parameter Dq and the Racah parameters B and C are estimated to be 1 412.4,776.8,and 3 427.6 cm? 1,respectively,according to the absorption spectra and crystal-splitting theory.A broadband fluorescence at about 1 000 nm due to 4 T2→ 4 A2 transition is produced by exciting the samples at 675 nm.After being annealed in an O2 atmosphere,the crystals become more transparent,while the effective light absorption of Cr 3+ ions is evidently enhanced and the emission intensity is also strengthened due to the reduction of oxygen vacancies in the CdWO4 crystal after annealing.     

Broadband Infrared Luminescence from Bismuth-Doped GeS2--Ga2S3 Chalcogenide Glasses

Near-infrared luminescence is observed from bismuth-doped GeS2-Ga2Sa chalcogenide glasses excited by an 808 nm laser diode. The emission peak with a maximum at about 1260 nm is observed in 80GeS2-2OGa2 Sa：O.fBi glass and it shifts toward the long wavelength with the addition of Bi gradually. The full width of half maximum （FWHM） is about 200 nm. The broadband infrared luminescence of Bi-doped GeS2-Ga2Sa chalcogenide glasses may be predominantly originated from the low valence state of Bi, such as Bi＋. Raman scattering is also conducted to claxify the structure of glasses. These Bi-doped GeS2 Ga2Sa chalcogenide glasses can be applied potentially in novel broadband optical fibre amplifiers and broadly tunable laser in optical communication system.     

Transparent Ni^2＋-Doped MgO-Al2O3-SiO2 Glass Ceramics with Broadband Infrared Luminescence

We report on transparent Ni^2＋-doped MgO-Al2O3-SiO2 glass ceramics with broadband infrared luminescence. Ni^2＋-doped MgO-Al2O3-SiO2 glass is prepared by using the conventional method. After heat treatment at high temperature, MgAl2O4 crystallites are precipitated, and their average size is about 4.3 nm. No luminescence is detected in the as-prepared glass sample, while broadband infrared luminescence centred at around 1315 nm with full width at half maximum （FWHM） of about 300 nm is observed from the glass ceramics. The observed infrared emission could be attributed to the ^3T2g（^3F）→^3A2g（^3F） transition of octahedral Ni^2＋ ions in the MgAl2O4 crystallites of the transparent glass ceramics. The product of the fluorescence lifetime and the stimulated emission cross section is about 1.6×10^-24 s cm^2.     

Influence of Oxygen Pressure on Structural and Sensing Properties of β-Ga2O3 Nanomaterial by Thermal Evaporation

We prepare the gallium oxide （β-Ga2O3） nanomaterials from gallium and oxygen by thermal evaporation in the argon atmosphere and research their oxygen sensing under UV illumination with different oxygen pressures. X-ray diffraction reveals that the synthesized product is monoclinic gallium oxide, it is further confirmed by electron diffraction of transmission electron microscope, and its morphology through the observation using scanning electron microscope reveals thatβ-Ga2O3 nanobelts with a breadth less than lOOnm and length of severai micrometers are synthesized under low oxygen pressure, while the nano/microbelts are synthesized under high oxygen pressure. Room-temperature oxygen sensing is tested under at 254 nm illumination and it is found that the current decreases quickly first and then slowly with oxygen pressure from low to high.