高质量氧化镓单晶及肖特基二极管的制备

本文采用导模法生长技术,成功制备了高质量掺Si氧化镓(β-Ga₂O₃)单晶,掺杂浓度为2×10¹⁸ cm^-3.晶体呈现淡蓝色,通过劳厄衍射、阴极荧光(CL)及拉曼测试对晶体的基本性质进行了表征,结果表明晶体质量良好.紫外透过光谱证明该晶体的禁带宽度约为4.71 eV.此外,在剥离衬底上,采用电子束蒸发、光刻和显影技术制备了垂直结构的肖特基二极管,平均击穿场强EAva为2.1 MV/cm,导通电阻3 mΩ·cm²,展示了优异性能.     

具有变时滞和马尔可夫切换的随机递归神经网络的弱收敛(英文)

本文研究了具有变时滞和马尔可夫切换的随机递归神经网络的弱收敛,通过运用Lyapunov函数、随机分析技巧和推广了的Halanay不等式,得到了上述模型为弱收敛的充分性条件,并且我们揭示了对上述递归神经网络模型所确定的segment过程的转移概率的极限分布是此模型的解过程的唯一的遍历不变概率测度.此外,我们还给出了例子和数值模拟来说明我们结论的正确性.     

Ag/SBA-15表面催化过程的现场SERS研究

以三嵌段共聚物P₁₂₃为模板剂, 正硅酸乙酯为硅源, 水热合成了介孔分子筛SBA-15, 通过对SBA-15内外表面修饰, 使用银氨溶液和硝酸银溶液作为金属源合成Ag/SBA-15, 透射电镜(TEM)研究表明在SBA-15孔道内较好地分散了颗粒状和棒状的Ag纳米粒子. 以苯硫酚作为探针分子, 研究了负载Ag纳米粒子的SBA-15的SERS效应, 结果表明Ag/SBA-15具有良好的SERS活性. 另外, 该材料对催化硼氢化钠还原对硝基苯酚具有良好的催化效果, 通过结合现场SERS技术, 研究了该催化过程的机理.     

Photoluminescence characteristics of GaN：Si

Both the electrical and optical properties are studied of the GaN：Si films with carrier concentrations ranging from 10^17cm^-3 to 10^19cm^-3.rhe results indicate that the increase in slope of carrier concentration starts to slow down when the flow rate of SiH4 is larger than 6.38μmol/min, which is attributed to the amphoteric character of Si. At the same time, the photoluminescence results show that the FWHM of UV is widened,which can be interpreted quantitatively with a semi-classic model. Furthermore, the intensity ratio between the yellow and the UV luminescences reduces monotonically with Si dopants increasing.     

SiC衬底上异质外延GaN薄膜结构缺陷对黄光辐射的影响

利用光致发光技术对在SiC衬底上采用MOCVD异质外延未故意掺杂的GaN进行发光特性的研究,发现在室温下有很强的黄光输出,同时,采用扫描电子显微术和X光衍射对样品的表面形貌和结构进行了研究,结果发现,随着缺陷密度的减少,黄光输出强度也有所降低,因此,黄光输出强度与缺陷有很大的关系.     

分光计实验教学中的体会

分析了分光计实验教学中的难点和学生在分光计调节中经常碰到的问题,重点分析了望远镜和双面镜组成的成像系统的成像光路图像以及两像移动的规律,提出了分光计实验教学中需要指导学生运用光路知识分析具体的实验现象从而指导实验操作,对教学实践具有良好的指导意义和参考价值。     

高场应力及栅应力下AlGaN/GaN HEMT器件退化研究

采用不同的高场应力和栅应力对AlGaN/GaN HEMT器件进行直流应力测试,实验发现：应力后器件主要参数如饱和漏电流,跨导峰值和阈值电压等均发生了明显退化,而且这些退化还是可以完全恢复的;高场应力下,器件特性的退化随高场应力偏置电压的增加和应力时间的累积而增大;对于不同的栅应力,相对来说,脉冲栅应力和开态栅应力下器件特性的退化比关态栅应力下的退化大.对不同应力前后器件饱和漏电流,跨导峰值和阈值电压的分析表明,AlGaN势垒层陷阱俘获沟道热电子以及栅极电子在栅漏间电场的作用下填充虚栅中的表面态是这些不同应 关键词： AlGaN/GaN HEMT器件 表面态(虚栅) 势垒层陷阱 应力     

GaN FP-HEMTs中击穿电压与电流崩塌的关系

研究了钝化在抑制电流崩塌的同时，会引起HEMT器件击穿电压的下降.而采用场板结构的AlGaN/GaN场板HEMT器件(FP-HEMT)的击穿电压从46V提高到了148V，表明了场板对提高击穿电压有显著作用(3倍以上).接着，比较了FP-HEMT器件与常规HEMT器件，钝化后HEMT器件在应力前后的电流崩塌程度，得出了采用场板结构比之钝化对器件抑制电流崩塌有更明显作用的结论.从理论上和实验上都表明，采用场板结构能够很好解决提高击穿电压与抑制电流崩塌之间的矛盾. 关键词： GaN 场板 击穿电压 电流崩塌     

GaN MOS-HEMT Using Ultra-Thin A1203 Dielectric Grown by Atomic Layer Deposition

We report a GaN metal-oxide-semiconductor high electron mobility transistor （MOS-HEMT） with atomic layer deposited （ALD） Al2O3 gate dielectric. Based on the previous work [Appl. Phys. Lett. 86 （2005） 063501] of Ye et al. by decreasing the thickness of the gate oxide to 3.5nm and optimizing the device fabrication process, the device with maximum transconductance of 150mS/mm is produced and discussed in comparison with the result of lOOmS/mm of Ye et al. The corresponding drain current density in the 0.8-μm-gate-length MOS-HEMT is 800mA/mm at the gate bias of 3.0 V. The gate leakage is two orders of magnitude lower than that of the conventional A1GaN/GaN HEMT. The excellent characteristics of this novel MOS-HEMT device structure with ALD Al2O3 gate dielectric are presented.     

A study on Al2O3 passivation in GaN MOS-HEMT by pulsed stress

This paper studies systematically the drain current collapse in AlGaN/GaN metal-oxide-semiconductor high electron mobility transistors （MOS-HEMTs） by applying pulsed stress to the device. Low-temperature layer of Al2O3 ultrathin film used as both gate dielectric and surface passivation layer was deposited by atomic layer deposition （ALD）. For HEMT, gate turn-on pulses induced large current collapse. However, for MOS-HEMT, no significant current collapse was found in the gate turn-on pulsing mode with different pulse widths, indicating the good passivation effect of ALD Al2O3. A small increase in Id in the drain pulsing mode is due to the relieving of self-heating effect. The comparison of synchronously dynamic pulsed Id - Vds characteristics of HEMT and MOS-HEMT further demonstrated the good passivation effect of ALD Al2O3.