| GaN MOS-HEMT Using Ultra-Thin A1203 Dielectric Grown by Atomic Layer Deposition |
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| 作者姓名： | 岳远征 郝跃 冯倩 张进城 马晓华 倪金玉 |
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| 作者单位： | Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices, Xidian University, Xi＇an 710071 |
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| 基金项目： | Supported by the State Key Basic Research Programme of China under Grant No 51327020301 and Xi＇an Applied Materials Innovation Fund under Grunt No XA-AM-200616. |
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| 摘 要： | We report a GaN metal-oxide-semiconductor high electron mobility transistor （MOS-HEMT） with atomic layer deposited （ALD） Al2O3 gate dielectric. Based on the previous work Appl. Phys. Lett. 86 （2005） 063501] of Ye et al. by decreasing the thickness of the gate oxide to 3.5nm and optimizing the device fabrication process, the device with maximum transconductance of 150mS/mm is produced and discussed in comparison with the result of lOOmS/mm of Ye et al. The corresponding drain current density in the 0.8-μm-gate-length MOS-HEMT is 800mA/mm at the gate bias of 3.0 V. The gate leakage is two orders of magnitude lower than that of the conventional A1GaN/GaN HEMT. The excellent characteristics of this novel MOS-HEMT device structure with ALD Al2O3 gate dielectric are presented.
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| 关 键 词： | 氮化镓 薄膜 电介质 原子分层 |
| 收稿时间： | 2007-3-20 |
| 修稿时间： | 2007-03-20 |
GaN MOS-HEMT Using Ultra-Thin Al2O3 Dielectric Grown by Atomic Layer Deposition |
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| YUE Yuan-Zheng,HAO Yue,FENG Qian,ZHANG Jin-Cheng,MA Xiao-Hua,NI Jin-Yu.GaN MOS-HEMT Using Ultra-Thin A1203 Dielectric Grown by Atomic Layer Deposition[J].Chinese Physics Letters,2007,24(8):2419-2422. |
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| Authors: | YUE Yuan-Zheng HAO Yue FENG Qian ZHANG Jin-Cheng MA Xiao-Hua NI Jin-Yu |
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| Affiliation: | Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices, Xidian University, Xi'an 710071 |
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| Abstract: | |
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| Keywords: | 85 30 Tv 73 40 Qv |
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