Minority Carrier Lifetime in As-Grown Germanium Doped Czochralski Silicon

The minority carrier lifetime of as-grown germanium-doped Czochralski （GCZ） silicon wafers doped with germanium concentrations [Ge]=10^16-10^18 cm^-3 is investigated in comparison with conventional CZ silicon samples. It is found that the lifetime distribution along the ingot changes with the variation of[Ge]. There is a critical value of [Ge] = 10^16 cm^-3 beyond which Ge can obviously influence the lifetime of as-grown ingots. This phenomenon is considered to be associated with the competition or combination between the oxygen related thermal donors （TDs） and electrically active Ge-related complexes. The related formation mechanisms and distributions are also discussed.     

Neutron Irradiation Effect in Two-Dimensional Electron Gas of AlGaN/GaN Heterostructures

AlGaN/GaN heterostructures have been irradiated by neutrons with different fluences and characterized by means of temperature-dependent Hall measurements and Micro-Raman scattering techniques. It is found that the carrier mobility of two-dimensional electron gas （2DEG） is very sensitive to neutrons. At a low fluence of 6.13 × 10^15 cm^-2, the carrier mobility drops sharply, while the sheet carrier density remains the same as that of an unirradiated sample. Moreover, even for a fluence of up to 3.66 × 10^16 cm^-2, the sheet carrier density shows only a slight drop. We attribute the degradation of the figure-of-merit （product of ns×μ ） of 2DEG to the defects induced by neutron irradiation. Raman measurements show that neutron irradiation does not yield obvious change to the strain state of AlGaN/GaN heterostructures, which proves that degradation of sheet carrier density has no relation to strain relaxation in the present study. The increase of the product of ns × μ of 2DEG during rapid thermal annealing processes at relatively high temperature has been attributed to the activation of GeGa transmuted from Ga and the recovery of displaced defects.     

Enhancement in Thermoelectrical Power Factor of N-Type Si80Ge20 Alloys

Influences of the carrier concentration and mobility of heavily doped n-type Si80 Ge20 alloys on the thermoelectrical power factor are investigated. The experimental results indicate that thermoeleetrieal power factors of 32- 36μWem-1K^-2 eouM be consistently achieved with carrier concentrations of 2.1-2.9 × 10^20cm^-3 and carrier mobilities of 36-40 cm^2 V^-1s^-1. However, many samples with suitable carrier concentrations do not always have high mobilities and high power factors. Some possible explanations for this behaviour are discussed.     

Distribution of carriers in gradient-doping transmission-mode GaAs photocathodes grown by molecular beam epitaxy

The gradient-doping structure is first applied to prepare the transmission-mode GaAs photocathode and the integral sensitivity of the sealed image tube achieves 1420~μ A/lm. This paper studies the inner carrier concentration distribution of the gradient-doping transmission-mode GaAs photocathode after molecular beam epitaxy (MBE) growth using the electrochemical capacitance-voltage profiling. The results show that an ideal gradient-doping structure can be obtained by using MBE growth. The total band-bending energy in the gradient-doping GaAs active-layer with doping concentration ranging from 1× 10^19~cm^-3 to 1×10^18~cm^-3 is calculated to be 46.3 meV, which helps to improve the photoexcited electrons movement toward surface for the thin epilayer. In addition, by analysis of the band offsets, it is found that the worse carrier concentration discrepancy between GaAs and GaAlAs causes a lower back interface electron potential barrier which decreases the amount of high-energy photoelectrons and affects the short-wave response.     

Superconductivity in Heavily Boron-Doped Diamond Films Prepared by Electron Assisted Chemical Vapour Deposition Method

Heavily boron-doped thick diamond films with higher superconducting transition temperatures have been prepared by electron assisted chemical vapour deposition method. The results of scanning electron microscopy, Raman spectroscopy, x-ray diffraction, and Hall effect indicate that the films have nice crystalline facets, a notable decrease in the growth rate, and an increase in the tensile stress. Meanwhile, the film resistivity decreases with the increase of the carrier concentration. Our measurements show that the films with 4.88×10^20 cm^-3 and 1.61×10^21 cm^-3 carrier concentration have superconductivity, with onset temperatures of 9.7 K （8.9K for zero resistance） and 7.8 K （6.1 K for zero resistance）, respectively.     

Optoelectronic Characteristics and Field Emission Properties of Indium-Doped Tin Oxide Nanowire Arrays

Optoelectronic characteristics of individual indium-doped tin oxide （In-SnO2） nanowires are investigated by performing transport measurement with UV illumination on/off circles. The current rapidly increases from 0.15 to 55 nA under UV illumination, which is ascribed to the increase of carrier concentration and the decrease of surface depletion. Emcient and stable field emission is obtained from In-Sn02 nanowire arrays. The current density is up to 17mA/cm^2 at 3.4 V/μm, and the fluctuations are less than 1%. The emission behaviour is perfectly in agreement with the Fowler Nordheim theory. Our results imply that In-SnO2 nanowires are promising candidates for UV detectors and field emission displays.     

Spin polarization effect for Os2 molecule

Density functional Theory （DFT） （B3p86） of Gaussian03 has been used to optimize the structure of Os2 molecule. The result shows that the ground state for Os2 molecule is 9-multiple state and its electronic configuration is ^9∑^＋g, which shows spin polarization effect of Os2 molecule of transition metal elements for the first time. Meanwhile, we have not found any spin pollution because the wavefunction of the ground state does not mingle with wavefunctions with higher energy states. So, the fact that the ground state for Os2 molecule is a 9-multiple state is indicative of spin polarization effect of Os2 molecule of transition metal elements. That is, there exist 8 parallel spin electrons. The non-conjugated electron is greatest in number. These electrons occupy different spacious tracks, so that the energy of Os2 molecule is minimized. It can be concluded that the effect of parallel spin of Os2 molecule is larger than the effect of the conjugated molecule, which is obviously related to the effect of electron d delocalization. In addition, the Murrell-Sorbie potential functions with the parameters for the ground state ^9∑^＋g and other states of Os2 molecule are derived. Dissociation energy De for the ground state of Os2 molecule is 3.3971eV, equilibrium bond length Re is 0.2403nm, vibration frequency ωe is 235.32cm^-1. Its force constants f2, f3, and f4 are 3.1032×10^2aJ·nm^-2, -14.3425×10^3aJ·nm^-3 and 50.5792×10^4aJ·nm^-4 respectively. The other spectroscopic data for the ground state of Os2 molecule ωexe, Be and ae are 0.4277cm^- 1, 0.0307cm^- 1 and 0.6491 × 10^-4cm^-1 respectively.     

Enhanced p-Type ZnO Films through Nitrogen and Argentum Codoping Grown by Ultrasonic Spray Pyrolysis

The N-Ag codoped ZnO films are deposited on quartz glass substrates by ultrasonic spray pyrolysis technology. The results indicate that the p-type conductivity in ZnO films is greatly enhanced by the double acceptor codoping of N and Ag compared with that of Ag- and N-monodoped ZnO films, and the NAg codoped low-resistivity p-type ZnO films with the resistivity of 1.05 Ω·cm, relatively high carrier concentration of 5.43×10^17 cm^-3, and Hall mobility of 10.09 cm^2 V^-1s^-1 are obtained under optimized conditions. This achievement confirms that p- type ZnO with acceptable properties for optoelectronic applications could be realized by simultaneous codoping with two potential acceptors.     

Density functional theory study on the structure and properties of Si3N4 clusters

The hybrid density functional theory B3LYP with basis sets 6-31G＊ has been used to study on the equilibrium geometries and electronic structures of possible isomers of Si3N4 clusters. 24 possible isomers are obtained. The most stable isomer of Si3N4 is a 3D structure with 7 Si-N bonds and 2 N-N bonds that could beformed by 3 quadrangles. The bond properties of the most stable isomer was analyzed by using natural bond orbital method （NBO）, the results suggest that the charges on Si and N atoms in Si-N bonds are quite large, so theinteraction of N-Si atoms in Si3N4 cluster is of strongly electric interaction. The primary IR and Raman vibrational frequency located at 1033.40 cm^-1, 473.63 cm^-1 respectively. The polarizabilities and hyperpolarizabilities of the most stable isomer are also analyzed.     

Electrical and Optical Properties of Bulk ZnO Single Crystal Grown by Flux Bridgman Method

Zinc oxide （ZnO） single crystals are grown by the modified vertical Bridgman method using a PbF2 flux. The maximum size of the as-grown ZnO crystal is about Φ25 mm×5mm. The transmittance of the as-grown ZnO crystal is more than 70% in the range of 600-800hm and the optical band gap is estimated to be 3.21eV. The photoluminescence spectrum indicates that the as-grown ZnO crystal has a very low concentration of native defects and is much closed to its stoichiometry. The electrical measurement exhibits that the ZnO crystal has low electrical resistivity of 0.02394Ωcm^-1 and a high carrier concentration of 2.10×10^18cm^-3.     

The fabrication of nickel silicide ohmic contacts to n-type 6H-silicon carbide

This paper reports that the nickel silicide ohmic contacts to n-type 6H-SiC have been fabricated. Transfer length method test patterns with NiSi/SiC and NiSi硅化镍;欧姆触点;n型碳化硅;制造;能带;带隙Project supported by the National Basic Research Program of China (Grant No~2002CB311904), the National Defense Basic Research Program of China (Grant No~51327010101) and the National Natural Science Foundation of China (Grant No~60376001).2006-09-192006-10-30This paper reports that the nickel silicide ohmic contacts to n-type 6H-SiC have been fabricated. Transfer length method test patterns with NiSi/SiC and NiSi2/SiC structure axe formed on N-wells created by N^＋ ion implantation into Si-faced p-type 6H-SiC epilayer respectively. NiSi and NiSi2 films are prepared by annealing the Ni and Si films separately deposited. A two-step annealing technology is performed for decreasing of oxidation problems occurred during high temperature processes. The specific contact resistance Pc of NiSi contact to n-type 6H-SiC as low as 1.78× 10^-6Ωcm^2 is achieved after a two-step annealing at 350 ℃for 20 min and 950℃ for 3 min in N2. And 3.84×10-6Ωcm^2 for NiSi2 contact is achieved. The result for sheet resistance Rsh of the N＋ implanted layers is about 1210Ω/□. X-ray diffraction analysis shows the formation of nickel silicide phases at the metal/n-SiC interface after thermal annealing. The surfaces of the nickel silicide after thermal annealing are analysed by scanning electron microscope.     

Power dissipation characteristics of great power and super high speed semiconductor switch

The power dissipation characteristics of pulsed power switch reversely switched dynistors （RSDs） are investigated in this paper. According to the expressions of voltage on RSD, derived from the plasma bipolar drift model and the RLC circuit equations of RSD main loop, the simulation waveforms of current and voltage on RSD are acquired through iterative calculation by using the fourth order Runge-Kutta method, then the curve of transient power on RSD versus time is obtained. The result shows that the total dissipation on RSD is trivial compared with the pulse discharge energy and the commutation dissipation can be nearly ignored compared with the quasi-static dissipation. These characteristics can make the repetitive frequency of RSD increase largely. The experimental results prove the validity of simulation calculations. The influence factors on power dissipation are discussed. The power dissipation increases with the increase of the peak current and the n-base width and with the decrease of n-base doping concentration. In order to keep a low power dissipation, it is suggested that the n-base width should be smaller than 320μm when doping concentration is 1.0×10^14cm^-3 while the doping concentration should be higher than 5.8×10^13cm^-3 when n-base width is 270μm.     

MgF2单晶中位错缺陷的ESR谱——含有130多条谱线

在室温条件下的激光晶体MgF2单晶中，实验发现含有130多条峰的电子自旋共振(ESR)波谱。两个样品分别取自MgF2单晶生长放肩的尖锥部位和MgF2:Co晶体.两个样品都没有经过任何辐照处理。两个样品具有相同的各向异性谱，说明掺入的Co2+离子引发了与MgF2单晶放肩部位相同的位错缺陷，产生了相同的多核固体自由基。这些顺磁固体自由基稳定且寿命长，产生的ESR信号是各向异性的。经初步计算拟合，谱线是由三种不同的多核自由基产生的。当磁场方向与晶体的[100]或[010]方向平行时，样品的ESR信号出现在磁场从0.2292特斯拉（T）到0.4654T的0.2362T范围内（相当于能带宽度为0.233eV）。最窄的线宽DH约为0.00128特斯拉，DH相当于相邻的能级差,是非常小的，仅有1.85×10-7eV 或1.46×10-3cm-1。这一事实表明其基态简并度是相当高的，在不太高的直流磁场下几乎是一个由准连续的能级组成的能带。这有可能成为可调谐的固体激光介质的新基点。     

Dy2 AlFe13 Mn3 化合物的本征磁致伸缩

通过X-射线衍射及磁测量手段研究了Dy2AlFe13Mn3化合物的结构及磁性质。研究结果表明Dy2AlFe13Mn3化合物具有六角相的Th2Ni17型结构。通过X-射线热膨胀测定法发现Dy2AlFe13Mn3化合物在245到344K的温度范围内存在负热膨胀现象，其平均热膨胀系数为α＝-1.1×10-4K-1K-1。在105到360K的温度范围内，通过比较磁性状态下的晶胞参数和由高温顺磁状态外延得到的低温顺磁状态下的晶胞参数间的差别计算了Dy2AlFe13Mn3化合物的本征磁致伸缩。结果表明Dy2AlFe13Mn3化合物的本征体磁致伸缩ωS在105到245K的温度范围内随着温度的升高而增大，由105K时的7.0×10-3 增加到245K时的9.1×10-3。随着温度的进一步升高，ωS反而减小。沿c轴方向的本征线磁致伸缩λc随着温度的升高而减小。基面内的本征线磁致伸缩λa在105到270K的温度范围内随着温度的升高而增大，从105K时的0.8×10-3增大到270K时的3.4×10-3，然后随着温度的进一步升高而减小。     

Influence of Ⅴ/Ⅲ ratio on the structural and photoluminescence properties of In0.52AlAs/In0.53GaAs metamorphic high electron mobility transistor grown by molecular beam epitaxy

A series of metamorphic high electron mobility transistors （MMHEMTs） with different Ⅴ/Ⅲ flux ratios are grown on CaAs （001） substrates by molecular beam epitaxy （MBE）. The samples are analysed by using atomic force microscopy （AFM）, Hall measurement, and low temperature photoluminescence （PL）. The optimum Ⅴ/Ⅲ ratio in a range from 15 to 60 for the growth of MMHEMTs is found to be around 40. At this ratio, the root mean square （RMS） roughness of the material is only 2.02 nm; a room-temperature mobility and a sheet electron density are obtained to be 10610.0cm^2/（V.s） and 3.26×10^12cm^-2 respectively. These results are equivalent to those obtained for the same structure grown on InP substrate. There are two peaks in the PL spectrum of the structure, corresponding to two sub-energy levels of the In0.53Ga0.47As quantum well. It is found that the photoluminescence intensities of the two peaks vary with the Ⅴ/Ⅲ ratio, for which the reasons are discussed.     

Elastic collisions between Si and D atoms at low temperatures and accurate analytic potential energy function and molecular constants of the SiD（χ^2П） radical

Interaction potential of the SiD(X2Π) radical is constructed by using the CCSD(T) theory in combination with the largest correlation-consistent quintuple basis set augmented with the diffuse functions in the valence range. Using the interaction potential, the spectroscopic parameters are accurately determined. The present D0, De, Re, ωe, αe and Be values are of 3.0956 eV, 3.1863 eV, 0.15223 nm, 1472.894 cm-1, 0.07799 cm-1 and 3.8717 cm-1, respectively, which are in excellent agreement with the measurements. A total of 26 vibrational states is predicted when J=0 by solving the radial Schro¨dinger equation of nuclear motion. The complete vibrational levels, classical turning points, initial rotation and centrifugal distortion constants when J=0 are reported for the first time, which are in good accord with the available experiments. The total and various partial-wave cross sections are calculated for the elastic collisions between Si and D atoms in their ground states at 1.0×10-11–1.0×10-3 a.u. when the two atoms approach each other along the SiD(X2Π) potential energy curve. Four shape resonances are found in the total elastic cross sections, and their resonant energies are of 1.73×10-5, 4.0×10-5, 6.45×10-5 and 5.5×10-4 a.u., respectively. Each shape resonance in the total elastic cross sections is carefully investigated. The results show that the shape of the total elastic cross sections is mainly dominated by the s partial wave at very low temperatures. Because of the weakness of the shape resonances coming from the higher partial waves, most of them are passed into oblivion by the strong s partial-wave elastic cross sections.     

Spin polarization effect for molecule Ta2

Density functional theory （DFT） （B3p86） has been used to optimize the structure of the molecule Ta2. The result shows that the ground state of molecule Ta2 is a 7-multiple state and its electronic configuration is ^7∑u^＋, which shows the spin polarization effect for molecule Ta2 of transition metal elements for the first time. Meanwhile, spin pollution has not been found because the wavefunction of the ground state does not mix with those of higher states. So, the fact that the ground state of molecule Ta2 is a 7-multiple state indicates a spin polarization effect of molecule Ta2 of the transition metal elements, i.e. there exist 6 parallel spin electrons and the non-conjugated electrons are greatest in number. These electrons occupy different space orbitals so that the energy of molecule Ta2 is minimized. It can be concluded that the effect of parallel spin of the molecule Ta2 is larger than the effect of the conjugated molecule, which is obviously related to the effect of d-electron delocalization. In addition, the Murrell-Sorbie potential functions with parameters for the ground state ^7∑u^＋ and other states of the molecule Ta2 are derived. The dissociation energy De, equilibrium bond length Re and vibration frequency we for the ground state of molecule Ta2 are 4.5513eV, 0.2433nm and 173.06cm^-1, respectively. Its force constants f2, f3 and f4 are 1.5965×10^2aJ.nm^-2, -6.4722×10^3aJ·nm^-3 and 29.4851×10^4aJ·nm^-4, respectively. Other spectroscopic data we xe, Be and αe for the ground state of Ta2 are 0.2078cm^-1, 0.0315 cm^-1 and 0.7858×10^-4 cm^-1, respectively.     

Determination of the stellar reaction rate for 12C（α,γ）16O： using a new expression with the reaction mechanism

The astrophysical reaction rate of 12C(α, γ)16O plays a key role in massive star evolution. However, this reaction rate and its uncertainties have not been well determined yet, especially at T9=0.2. The existing results even disagree with each other to a certain extent. In this paper, the E1, E2 and total (E1+E2) 12C(α, γ)16O reaction rates are calculated in the temperature range from T9=0.3 to 2 according to all the available cross section data. A new analytic expression of the 12 C(α, γ)16 O reaction rate is brought forward based on the reaction mechanism. In this expression, each part embodies the underlying physics of the reaction. Unlike previous works, some physical parameters are chosen from experimental results directly, instead of all the parameters obtained from fitting. These parameters in the new expression, with their 3σ fit errors, are obtained from fit to our calculated reaction rate from T9=0.3 to 2. Using the fit results, the analytic expression of 12C(α, γ)16O reaction rate is extrapolated down to T9=0.05 based on the underlying physics. The 12C(α, γ)16 O reaction rate at T9=0.2 is (8.78 ± 1.52) × 1015 cm3s-1mol-1. Some comparisons and discussions about our new 12 C(α, γ)16 O reaction rate are presented, and the contributions of the reaction rate correspond to the different part of reaction mechanism are given. The agreements of the reaction rate below T9=2 between our results and previous works indicate that our results are reliable, and they could be included in the astrophysical reaction rate network. Furthermore, we believe our method to investigate the 12C(α, γ)16O reaction rate is reasonable, and this method can also be employed to study the reaction rate of other astrophysical reactions. Finally, a new constraint of the supernovae production factor of some isotopes are illustrated according to our 12C(α, γ)16O reaction rates.     

Enhanced interface properties of diamond MOSFETs with Al_2O_3 gate dielectric deposited via ALD at a high temperature

The interface state of hydrogen-terminated(C–H) diamond metal–oxide–semiconductor field-effect transistor(MOSFET) is critical for device performance. In this paper, we investigate the fixed charges and interface trap states in C–H diamond MOSFETs by using different gate dielectric processes. The devices use Al_2O_3 as gate dielectrics that are deposited via atomic layer deposition(ALD) at 80℃ and 300℃, respectively, and their C–V and I–V characteristics are comparatively investigated. Mott–Schottky plots(1/C~2–VG) suggest that positive and negative fixed charges with low density of about 1011 cm~(-2) are located in the 80-℃-and 300-℃ deposition Al_2O_3 films, respectively. The analyses of direct current(DC)/pulsed I–V and frequency-dependent conductance show that the shallow interface traps(0.46 e V–0.52 e V and0.53 e V–0.56 e V above the valence band of diamond for the 80-℃ and 300-℃ deposition conditions, respectively) with distinct density(7.8 × 10~(13) e V~(-1)·cm~(-2)–8.5 × 10~(13) e V-1·cm~(-2) and 2.2 × 1013 e V~(-1)·cm~(-2)–5.1 × 10~(13) e V~(-1)·cm~(-2) for the80-℃-and 300-℃-deposition conditions, respectively) are present at the Al_2O_3/C–H diamond interface. Dynamic pulsed I–V and capacitance dispersion results indicate that the ALD Al_2O_3 technique with 300-℃ deposition temperature has higher stability for C–H diamond MOSFETs.