| SiC衬底上异质外延GaN薄膜结构缺陷对黄光辐射的影响 |
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| 引用本文： | 冯倩,段猛,郝跃.SiC衬底上异质外延GaN薄膜结构缺陷对黄光辐射的影响[J].光子学报,2003,32(11):1340-1342. |
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| 作者姓名： | 冯倩 段猛 郝跃 |
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| 作者单位： | 1. 西安电子科技大学技术物理学院,西安,710071;西安电子科技大学微电子研究所,西安,710071
2. 西安电子科技大学微电子研究所,西安,710071 |
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| 基金项目： | 国家重大基础研究 (973计划 )与国防预研 (批准号 :4 1 30 80 6 0 1 0 6 )资助项目 |
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| 摘 要： | 利用光致发光技术对在SiC衬底上采用MOCVD异质外延未故意掺杂的GaN进行发光特性的研究,发现在室温下有很强的黄光输出,同时,采用扫描电子显微术和X光衍射对样品的表面形貌和结构进行了研究,结果发现,随着缺陷密度的减少,黄光输出强度也有所降低,因此,黄光输出强度与缺陷有很大的关系.
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| 关 键 词： | GaN 异质外延 光致发光 扫描电子显微术 X光衍射 |
| 收稿时间： | 2002/12/16 |
| 修稿时间： | 2002年12月16 |
Influence on Yellow-band Emission of Undoped GaN Induced by Stuctural Defects |
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| Feng Qian,Duan Meng,Hao Yue.Influence on Yellow-band Emission of Undoped GaN Induced by Stuctural Defects[J].Acta Photonica Sinica,2003,32(11):1340-1342. |
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| Authors: | Feng Qian Duan Meng Hao Yue |
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| Institution: | 1. School of Technical Physics, Xidian University, Xi′an 710071;2. Research Inst. of Microelectronics, Xidian Univ., Xi′an 710071 |
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| Abstract: | The photoluminesce(PL) band of undoped GaN grown by MOCVD on SiC substrate has been studied, the measurements show there is yellow band emission under room temperature. At the same time, SEM and XRD are used to investigate the surface morphology and structure characteristics .As a result, it is find the intensity of yellow emission decreases as the density of defects reduces, hence there is a strong relation between the defect density and the intensity of yellow band. |
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| Keywords: | GaN Heteroepitaxy Photoluminescence SEM XRD |
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