| Photoluminescence characteristics of GaN：Si |
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| 引用本文： | 冯倩,龚欣,张晓菊,郝跃.Photoluminescence characteristics of GaN：Si[J].中国物理 B,2005,14(10):2133-2136. |
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| 作者姓名： | 冯倩 龚欣 张晓菊 郝跃 |
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| 作者单位： | Research Institute of Microelectronics, Xidian University,Key Laboratory of Ministry of Education for Wide Gap Semiconductor Materials and Devices, Xi'an 710071, China;School of Telecommunications Engineering, Xidian University,Xi'an 710071, China;Research Institute of Microelectronics, Xidian University,Key Laboratory of Ministry of Education for Wide Gap Semiconductor Materials and Devices, Xi'an 710071, China;Research Institute of Microelectronics, Xidian University,Key Laboratory of Ministry of Education for Wide Gap Semiconductor Materials and Devices, Xi'an 710071, China;Research Institute of Microelectronics, Xidian University,Key Laboratory of Ministry of Education for Wide Gap Semiconductor Materials and Devices, Xi'an 710071, China |
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| 基金项目： | Project supported by the State Key Development Program for Basic Research of China(973) and the National Advanced Research Program (Grant No 41308060106). |
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| 摘 要： | Both the electrical and optical properties are studied of the GaN：Si films with carrier concentrations ranging from 10^17cm^-3 to 10^19cm^-3.rhe results indicate that the increase in slope of carrier concentration starts to slow down when the flow rate of SiH4 is larger than 6.38μmol/min, which is attributed to the amphoteric character of Si. At the same time, the photoluminescence results show that the FWHM of UV is widened,which can be interpreted quantitatively with a semi-classic model. Furthermore, the intensity ratio between the yellow and the UV luminescences reduces monotonically with Si dopants increasing.
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| 关 键 词： | GaN：Si 光致发光 杂多晶体 光学性质 |
| 收稿时间： | 2005-03-24 |
| 修稿时间： | 2005-03-242005-05-30 |
Photoluminescence characteristics of GaN:Si |
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| Feng Qian,Gong Xin,Zhang Xiao-Ju and Hao Yue.Photoluminescence characteristics of GaN:Si[J].Chinese Physics B,2005,14(10):2133-2136. |
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| Authors: | Feng Qian Gong Xin Zhang Xiao-Ju and Hao Yue |
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| Institution: | Research Institute of Microelectronics, Xidian University,Key Laboratory of Ministry of Education for Wide Gap Semiconductor Materials and Devices, Xi'an 710071, China; Research Institute of Microelectronics, Xidian University,Key Laboratory of Ministry of Education for Wide Gap Semiconductor Materials and Devices, Xi'an 710071, China;School of Telecommunications Engineering, Xidian University,Xi'an 710071, China |
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| Abstract: | Both the electrical and optical properties are studied of the GaN:Si films with carrier concentrations ranging from 10$^{17}$cm$^{-3}$
to 10$^{19}$cm$^{-3}$.The results indicate that the increase in slope of
carrier concentration starts to slow down when the flow rate of SiH$_{4}$ is larger than 6.38\mu $mol/min, which is attributed to the amphoteric
character of Si. At the same time, the photoluminescence results show that the FWHM of UV is widened, which can be interpreted quantitatively with a semi-classic model. Furthermore, the intensity ratio between the yellow and the UV luminescences reduces monotonically with Si dopants increasing. |
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| Keywords: | GaN:Si heteroepitaxy Hall photoluminescence |
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