Influence of nanomechanical force on the electronic structure of InAs/GaAs quantum dots

We show nanomechanical force is useful to dynamically control the optical response of self-assembled quantum dots, giving a method to shift electron and heavy hole levels, interval of electron and heavy hole energy levels, and the emission wavelength of quantum dots (QDs). The strain, the electron energy levels, and heavy hole energy levels of InAs/GaAs(001) quantum dots with vertical nanomechanical force are investigated. Both the lattice mismatch and nanomechanical force are considered at the same time. The results show that the hydrostatic and the biaxial strains inside the QDs subjected to nanomechanical force vary with nanomechanical force. That gives the control for tailoring band gaps and optical response. Moreover, due to strain-modified energy, the band edge is also influenced by nanomechanical force. The nanomechanical force is shown to influence the band edge. As is well known, the band offset affects the electronic structure, which shows that the nanomechanical force is proven to be useful to tailor the emission wavelength of QDs. Our research helps to better understand how the nanomechanical force can be used to dynamically control the optics of quantum dots.     

Secondary electron yield suppression using millimeter-scale pillar array and explanation of the abnormal yield–energy curve

The phenomenon of secondary electron emission is of considerable interest in areas such as particle accelerators and on-board radio frequency(RF) components.Total secondary electron yield(TSEY) is a parameter that is frequently used to describe the secondary electron emission capability of a material.It has been widely recognized that the TSEY vs.primary electron energy curve has a single-hump shape.However, the TSEY–energy curve with a double-hump shape was also observed experimentally—this anomaly still lacks explanation.In this work, we explain this anomaly with the help of a millimetre-scale(mm-scale) silver pillar array fabricated by three-dimensional(3 D) printing technology.The TSEY–energy curve of this pillar array as well as its flat counterpart is obtained using sample current method.The measurement results show that for the considered primary electron energy(40–1500 eV), the pillar array can obviously suppress TSEY,and its TSEY–energy curve has an obvious double-hump shape.Through Monte Carlo simulations and electron beam spot size measurements, we successfully attribute the double-hump effect to the dependence of electron beam spot size on the primary electron energy.The observations of this work may be of help in determining the TSEY of roughened surface with characteristic surface structures comparable to electron beam spot size.It also experimentally confirms the TSEY suppression effect of pillar arrays.     

Low—Lying Resonance States of Slow Electron Collisions With Atomic Oxygen

A 39-target state close-coupling calculation of low-energy electron scattering from atomic oxygen is carried out with core-valence electron correlation by using R-matrix method. It is shown that the elastic cross section has a huge and sharp increase with the electron energy going down below 1eV. This remarkable structure is attributed to a few very low-lying potential resonances and the features of these resonances are given with partial cross sections. It is also shown that after considering excitations of two electrons from 2s shell, the three lowest atomic energy levels are in agreement with experimental results better than that just considering excitations of two electrons from the 2p shell as well as only one electron from the 2s shell. Elastic and two excitation (^3P→^1D and ^3P→^1S) cross sections are given and compared with the other theoretical and experimental results.     

Positive and Negative Pulse Etching Method of Porous Silicon Fabrication

We present a new method in which both positive and negative pulses are used to etch silicon for fabrication of porous silicon （PS） monolayer. The optical thickness and morphology of PS monolayer fabricated with different negative pulse voltages are investigated by means of reflectance spectra, scanning electron microscopy and photoluminescence spectra. It is found that with this method the PS monolayer is thicker and more uniform. The micropores also appear to be more regular than those made by common positive pulse etching. This phenomenon is attributed to the vertical etching effect of the PS monolayer being strengthened while lateral etching process is restrained. The explanation we propose is that negative pulse can help the hydrogen cations （H^＋） in the electrolyte move into the micropores of PS monolayer. These H^＋ ions combine with the Si atoms on the wall of new-formed micropores, leading to formation of Si-H bonds. The formation of Silt bonds results in a hole depletion layer near the micropore wall surface, which decreases hole density on the surface, preventing the micropore wall from being eroded laterally by F^- anions. Therefore during the positive pulse period the etching reaction occurs exclusively only at the bottom of the micropores where lots of holes are provided by the anode.     

Investigation of outer valence orbital of CF2Cl2 by a new type of electron momentum spectrometer

Electronic states of CF2Cl2 （dichlorodifluoromethane, Freon 12） have been studied using a new type of electron momentum spectrometer with a very high efficiency at an impact energy of 1200 eV plus binding energy. The experimental electron momentum profiles are compared with the density functional theory （DFT） and Hartree-Fock （HF） calculations. The relationship between orbital assignments in different coordinate systems is discussed. A new method of difference analysis based on the new type of electron momentum spectrometer is used to clarify the ambiguities regarding the orbital ordering.     

Preparation and 1.06μm Fluorescence Decay of Nd~(3+)-Doped Glass Ceramics Containing NaYF_4 Nanocrystallites

Considered to be a candidate for large-size bulk materials used in lasers and other fields,Nd~(3+)-doped glass ceramics containing NaYF_4 nanocrystallites are prepared.Using x-ray diffraction and transmission electron microscopy,we show that pure cubic NaYF4 is well precipitated in the glass matrix.To obtain the optical property of this material at 1.06 μm,the fluorescence decay of ~4F_(3/2) energy levels is measured and analyzed.It is found that the fluorescence lifetime decreases first and then increases with the increasing dopant concentration due to the existing but finally weakening energy dissipation.As a result,a long radiation lifetime of about 191-444μs is obtained at 1.06μm in the prepared material.It is thus revealed that Nd~(3+)-doped glass ceramic containing NaYF_4 nanocrystallites is a potential candidate as a near-infrared laser material.     

Geometries,stabilities, and electronic properties analysis in In_nNi~((0,±1)) clusters: Molecular modeling and DFT calculations

Density functional theory(DFT) with the B3 LYP method and the SDD basis set is selected to investigate In_nNi,In_nNi~-, and In_nNi~+ (n = 1–14) clusters. For neutral and charged systems, several isomers and different multiplicities are studied with the aim to confirm the most stable structures. The structural evolution of neutral, cationic, and anionic In_nNi clusters, which favors the three-dimensional structures for n = 3–14. The main configurations of the In_nNi isomers are not affected by adding or removing an electron, the order of their stabilities is also nearly not affected. The obtained binding energy exhibits that the Ni-doped In_(13) cluster is the most stable species of all different sized clusters. The calculated fragmentation energy and the second-order energy difference as a function of the cluster size exhibit a pronounced even–odd alternation phenomenon. The electronic properties including energy gap(E_g), adiabatic electron affinity(AEA), vertical electron detachment energy(VDE), adiabatic ionization potential energy(AIP), and vertical ionization potential energy(VIP) are studied. The total magnetic moments show that the different magnetic moments depend on the number of the In atoms for charged In_nNi. Additionally, the natural population analysis of In_nNi~((0,±1)clusters is also discussed.     

Numerical study on the characteristics of nitrogen discharge at high pressure with induced plasma

Based on the fluid theory of plasma, a model is built to study the characteristics of nitrogen discharge at high pressure with induced argon plasma. In the model, species such as electrons, N2+, N4+, Ar+, and two metastable states (N 2(A3∑u+), N2 (a1 ∑u-)) are taken into account. The model includes the particle continuity equation, the electron energy balance equation, and Poisson抯equation. The model is solved with a finite difference method. The numerical results are obtained and used to investigate the effect of time taken to add nitrogen gas and initially-induced argon plasma pressure. It is found that lower speeds of adding the nitrogen gas and varying the gas pressure can induce higher plasma density, and inversely lower electron temperature. At high-pressure discharge, the electron density increases when the proportion of nitrogen component is below 40%, while the electron density will keep constant as the nitrogen component further increases. It is also shown that with the increase of initially-induced argon plasma pressure, the density of charged particles increases, and the electron temperature as well as the electric field decreases.     

Electronic and Shallow Impurity States in Semiconductor Heterostructures Under an Applied Electric Field

With the use of variational method to solve the effective mass equation, we have studied the electronic and shallow impurity states in semiconductor heterostructures under an applied electric field. The electron energy levels are calculated exactly and the impurity binding energies are calculated with the variational approach. It is found that the behaviors of electronic and shallow impurity states in heterostructures under an applied electric field are analogous to that of quantum wells. Our results show that with the increasing strength of electric field, the electron confinement energies increase, and the impurity binding energy increases also when the impurity is on the surface, while the impurity binding energy increases at first, to a peak value, then decreases to a value which is related to the impurity position when the impurity is away from the surface. In the absence of electric field, the result tends to the Levine‘s ground state energy (-1/4 effective Rydberg) when the impurity is on the surface, and the ground impurity binding energy tends to that in the bulk when the impurity is far away from the surface. The dependence of the impurity binding energy on the impurity position for different electric field is also discussed.     

Measurment of the energy spectrum of an electron beam extracted from an accelerator

The electron energy spectrum is one of the most important characteristics of an electron beam that is extracted from a linear accelerator. The most direct way to determine an electron spectrum would be to use a magnetic spectrometer and this method could also give results with high precision and effectiveness. In this article we describe our design of a new multilayer absorption method, which is based on the depth-dose curves method that can be used in most irradiation accelerators,and adds the Monte Carlo simulation and iterative algorithm in order to reconstruct the electron energy spectrum. In this article the energy spectrum was measured using these two methods, and good results were acquired. These results could be crosschecked, which made the results more reliable.     

Operator ordering, ellipticity and spurious solutions in k · p calculations of III-nitride nanostructures

We analyze the ellipticity of the standard k · p wurtzite model for the symmetrized and the Burt–Foreman operator ordering. We find that for certain situations the symmetrized Hamiltonian is unstable, leads to unplausible results and can cause spurious solutions. We show that the operator ordering in wurtzite must be completely asymmetric to be stable. The asymmetric operator ordering is elliptic and consequently no spurious solutions are obtained. Therefore we recommend the use of a complete asymmetric operator ordering for nitride device simulation.     

Determination of Scaling Parameter and Dynamical Resonances in Complex-Rotated Hamiltonian Ⅰ： Theory

In this paper we present a theoretical analysis on the determination of the scaling parameter in the complex-rotated Hamiltonian, which has served as a basis for successful applications of the rigged Hilbert space theory for resonances. Based on the complex energy eigenvalue, E（θ） = ER（θ） - iГ（θ）/2, as a function of the scaling parameter θ, we find that for potential barrier scattering, the condition dГ（θI）/dθ = 0 uniquely determines the scaling parameter 8. The condition d ER （θR）/ dθ = 0 is merely a consequence of the Virial theorem and θI =θR is not a necessary condition for a resonance state. We also provide a harmonic approximation formMism for resonances in scattering over a potential barrier.     

Determination of Scaling Parameter and Dynamical Resonances in Complex-Rotated Hamiltonian Ⅱ： Numerical Analysis

This paper is concerned with the determination of a unique scaling parameter in complex scaling analysis and with accurate calculation of dynamics resonances. In the preceding paper we have presented a theoretical analysis and provided a formalism for dynamical resonance calculations. In this paper we present accurate numerical results for two non-trivial dynamical processes, namely, models of diatomic molecular predissociation and of barrier potential scattering for resonances. The results presented in this paper confirm our theoretical analysis, remove a theoretical ambiguity on determination of the complex scaling parameter, and provide an improved understanding for dynamical resonance calculations in rigged Hilbert space.     

Solution of Schrodinger Equation for Two-Dimensional Complex Ouartic Potentials

We investigate the quasi-exact solutions of the Schrodinger wave equation for two-dimensional non-hermitian complex Hamiltonian systems within the frame work of an extended complex phase space characterized by x = x1 ＋ ip3, y = x2 ＋ ip4, px= p1＋ ix3, py= p2 ＋ ix4. Explicit expressions of the energy eigenvalues and the eigenfunctions for ground and first excited states for a complex quartic potential are obtained. Eigenvalue spectra of some variants of the complex quartic potential, including PT-symmetrie one, are also worked out.     

Deriving Energy-Gap of Some Nonlinear Hamiltonians by Invariant Eigen-operator Method

By virtue of the invariant eigen-operator method we search for the invariant eigen-operators for some Hamiltonians describing nonlinear processes in particle physics. In this way the energy-gap of the Hamiltonians can be naturally obtained. The characteristic polynomial theory has been fully employed in our derivation.     

Theoretical Investigation of Exchange Bias in Compensated Cases

The exchange bias （EB） of the ferromagnetic （FM）/antiferromagnetic （AFM） bilayers in a compensated case is studied by use of the many-body Green＇s function method of quantum statistical theory. The so-called compensated case is that there is no net magnetization on the AFM side of the interface. Our conclusion is that the EB in this case is primarily from the asymmetry of the interracial exchange coupling strengths between the FM and the two sublattices of the AFM. The effects of the layer thickness, temperature and the interracial coupling strength oi2 the exchange bias HE are investigated. The dependence of HE on the FM layer thickness and temperature is qualitatively in agreement with experimental results. HE is nearly inversely proportional to FM thickness. When temperature varies, both HE and He decrease with temperature increasing. The anisotropy of the FM layer only slightly influence He, but does not influence HE.     

Invertibility of Infinite-Dimensional Hamiltonian Operators and Its Application to Plate Bending Equation

The results of invertibility and spectrum for some different classes of infinite-dimensional Hayniltonian operators, after a brief classification by domains. are given. By the above results, the associated infinite-dimensional Hamiltonian operator with simple supported rectangular plate is proved to be invertible. Furthermore, by a certain compactness, we find that the spectrum of this operator consists only of isolated eigenvalues with finite geometric multiplicity, which will play a significant role in finding the analytical and numerical solution based on Hamiltonian system for a class of plate bending equations.     

Spectra of Off-diagonal Infinite-Dimensional Hamiltonian Operators and Their Applications to Plane Elasticity Problems

In the present paper, the spectrums of off-diagonal infinite-dimensional Hamiltonian operators are studied. At first, we prove that the spectrum, the continuous-spectrum, and the union of the point-spectrum and residual- spectrum of the operators are symmetric with respect to real axis and imaginary axis. Then for the purpose of reducing the dimension of the studied problems, the spectrums of the operators are expressed by the spectrums of the product of two self-adjoint operators in state spac,3. At last, the above-mentioned results are applied to plane elasticity problems, which shows the practicability of the results.     

A Type of New Loop Algebra and a Generalized Tu Formula

A new Lie algebra, which is far different form the known An-1, is established, for which the corresponding loop algebra is given. From this, two isospectral problems are revealed, whose compatibility condition reads a kind of zero curvature equation, which permits Lax integrable hierarchies of soliton equations. To aim at generating Hamiltonian structures of such soliton-equation hierarchies, a beautiful Killing-Cartan form, a generalized trace functional of matrices, is given, for which a generalized Tu formula （GTF） is obtained, while the trace identity proposed by Tu Guizhang [J. Math. Phys. 30 （1989） 330] is a special case of the GTF. The computing formula on the constant γ to be determined appearing in the GTF is worked out, which ensures the exact and simple computation on it. Finally, we take two examples to reveal the applications of the theory presented in the article. In details, the first example reveals a new Liouville-integrable hierarchy of soliton equations along with two potential functions and Hamiltonian structure. To obtain the second integrable hierarchy of soliton equations, a higher-dimensional loop algebra is first constructed. Thus, the second example shows another new Liouville integrable hierarchy with 5-potential component functions and bi- Hamiltonian structure. The approach presented in the paper may be extensively used to generate other new integrable soliton-equation hierarchies with multi-Hamiltonian structures.