| Impact of symmetrized and Burt—Foreman Hamiltonians on spurious solutions and energy levels of InAs/GaAs quantum dots |
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| 引用本文： | 谷永先,杨涛,季海铭,徐鹏飞,王占国.Impact of symmetrized and Burt—Foreman Hamiltonians on spurious solutions and energy levels of InAs/GaAs quantum dots[J].中国物理 B,2010,19(8):619-627. |
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| 作者姓名： | 谷永先 杨涛 季海铭 徐鹏飞 王占国 |
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| 作者单位： | Key Laboratory of Semiconductor Materials, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, China;Key Laboratory of Semiconductor Materials, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, China;Key Laboratory of Semiconductor Materials, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, China;Key Laboratory of Semiconductor Materials, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, China;Key Laboratory of Semiconductor Materials, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, China |
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| 基金项目： | Project supported by the National High Technology Research and Development Program of China (Grant No. 2006AA03Z401), `One-Hundred Talents Program' of the Chinese Academy of Sciences, and the National Natural Science Foundation of China (Grant No. 60876033). |
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| 摘 要： | <正>We present a systematic investigation of calculating quantum dots(QDs) energy levels using the finite element method in the frame of the eight-band k·p method.Numerical results including piezoelectricity,electron and hole levels,as well as wave functions are achieved.In the calculation of energy levels,we do observe spurious solutions(SSs) no matter Burt-Foreman or symmetrized Hamiltonians are used.Different theories are used to analyse the SSs,we find that the ellipticity theory can give a better explanation for the origin of SSs and symmetrized Hamiltonian is easier to lead to SSs.The energy levels simulated with the two Hamiltonians are compared to each other after eliminating SSs,different Hamiltonians cause a larger difference on electron energy levels than that on hole energy levels and this difference decreases with the increase of QD size.
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| 关 键 词： | quantum dot symmetrized Hamiltonian Burt-Foreman Hamiltonian finite element method spurious solutions |
| 收稿时间： | 2/2/2010 12:00:00 AM |
| 修稿时间： | 3/1/2010 12:00:00 AM |
Impact of symmetrized and Burtben Foreman Hamiltonians on spurious solutions and energy levels of InAs/GaAs quantum dots |
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| Gu Yong-Xian,Yang Tao,Ji Hai-Ming,Xu Peng-Fei and Wang Zhan-Guo.Impact of symmetrized and Burtben Foreman Hamiltonians on spurious solutions and energy levels of InAs/GaAs quantum dots[J].Chinese Physics B,2010,19(8):619-627. |
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| Authors: | Gu Yong-Xian Yang Tao Ji Hai-Ming Xu Peng-Fei and Wang Zhan-Guo |
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| Institution: | Key Laboratory of Semiconductor Materials, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, China |
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| Abstract: | quantum dot, symmetrized Hamiltonian, Burt Foreman Hamiltonian, finite element method, spurious solutions |
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| Keywords: | quantum dot symmetrized Hamiltonian Burt Foreman Hamiltonian finite element method spurious solutions |
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