| Electronic band structure of a type-II ’W’ quantum well calculated by an eight-band k·p model |
| |
| 引用本文： | 迂修,谷永先,王青,韦欣,陈良惠.Electronic band structure of a type-II ’W’ quantum well calculated by an eight-band k·p model[J].中国物理 B,2011,20(3):30507-030507. |
| |
| 作者姓名： | 迂修 谷永先 王青 韦欣 陈良惠 |
| |
| 作者单位： | (1)Key Laboratory of Semiconductor Materials, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China; (2)Nano-Optoelectronics Laboratory, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China |
| |
| 基金项目： | Project supported by the National Natural Science Foundation of China (Grant No. 60636030). |
| |
| 摘 要： | In this paper, we present an investigation of type-II 'W' quantum wells for the InAs/Ga1-xInxSb/AlSb family, where 'W' denotes the conduction profile of the material. We focus our attention on using the eight-band k?p model to calculate the band structures within the framework of finite element method. For the sake of clarity, the simulation in this paper is simplified and based on only one period---AlSb/InAs/Ga1-xInxSb/InAs/AlSb. The obtained numerical results include the energy levels and wavefunctions of carriers. We discuss the variations of the electronic properties by changing several important parameters, such as the thickness of either InAs or Ga1-xInxSb layer and the alloy composition in Ga1-xInxSb separately. In the last part, in order to compare the eight-band k?p model, we recalculate the conduction bands of the 'W' structure using the one-band k?p model and then discuss the difference between the two results, showing that conduction bands are strongly coupled with valence bands in the narrow band gap structure. The in-plane energy dispersions, which illustrate the suppression of the Auger recombination process, are also obtained.
|
| 关 键 词： | type-II ’W’ quantum well Burt-Foreman Hamiltonian finite element methods |
| 收稿时间： | 2010-08-31 |
Electronic band structure of a type-II 'W' quantum well calculated by an eight-band k·p model |
| |
| Yu Xiu,Gu Yong-Xian,Wang Qing,Wei Xin and Chen Liang-Hui.Electronic band structure of a type-II 'W' quantum well calculated by an eight-band k·p model[J].Chinese Physics B,2011,20(3):30507-030507. |
| |
| Authors: | Yu Xiu Gu Yong-Xian Wang Qing Wei Xin and Chen Liang-Hui |
| |
| Institution: | Nano-Optoelectronics Laboratory, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;Key Laboratory of Semiconductor Materials, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;. |
| |
| Abstract: | In this paper, we present an investigation of type-II 'W' quantum wells for the InAs/Ga1-xInxSb/AlSb family, where 'W' denotes the conduction profile of the material. We focus our attention on using the eight-band k·p model to calculate the band structures within the framework of finite element method. For the sake of clarity, the simulation in this paper is simplified and based on only one period–AlSb/InAs/Ga1-xInxSb/InAs/AlSb. The obtained numerical results include the energy levels and wavefunctions of carriers. We discuss the variations of the electronic properties by changing several important parameters, such as the thickness of either InAs or Ga1-xInxSb layer and the alloy composition in Ga1-xInxSb separately. In the last part, in order to compare the eight-band k·p model, we recalculate the conduction bands of the 'W' structure using the one-band k·p model and then discuss the difference between the two results, showing that conduction bands are strongly coupled with valence bands in the narrow band gap structure. The in-plane energy dispersions, which illustrate the suppression of the Auger recombination process, are also obtained. |
| |
| Keywords: | type-II 'W' quantum well Burt-Foreman Hamiltonian finite element methods |
| 本文献已被 维普 等数据库收录！ |
| 点击此处可从《中国物理 B》浏览原始摘要信息 |
| 点击此处可从《中国物理 B》下载免费的PDF全文 |
|
