熔石英后表面坑点型划痕对光场调制的近场模拟

建立了坑点型划痕的旋转抛物面模型, 用三维时域有限差分方法研究了熔石英后表面坑点型划痕随深度、 宽度、 间距以及酸蚀量变化对波长λ =355 nm入射激光的调制.研究表明, 这类划痕调制最强区位于相邻两坑点的连接区, 且越靠近表面调制越强.当其宽深比为2.0---3.5、 坑点间距约为坑点宽度的1/2时, 可获得最大光场调制, 最大光强增强因子(LIEF)为11.53; 当坑点间距大于坑点宽度时, 其调制大为减弱, 相当于单坑的场调制.对宽为60δ (δ =λ/12), 深和间距均为30δ的坑点型划痕进行刻蚀模拟, 刻蚀过程中最大LIEF为11.0, 当间距小于300 nm时, 相邻坑点由于衍射形成场贯通.     

横向划痕对光场调制的近场模拟

熔石英亚表面划痕对入射激光的近场调制是导致光学元件低阈值损伤的主要因素之一. 用三维时域有限差分方法研究了连续横向划痕的近场分布, 对比了尖锐截面与光滑截面场调制的差异, 着重探讨了光场调制与划痕宽深比R的关系. 研究表明: 酸蚀后的光滑截面有助于减弱近场调制, 这类划痕的R>10.0时调制较弱且相互接近, R<5.0时调制显著增强. 当R取1---3时, 亚表面的调制达最大值, 最大电场幅值为入射波幅值的4.3倍. 当R取1.0---3.5时, 缺陷附近有80%以上取样点的最大电场幅值超过入射波幅值的2倍. 随着深度的增大, 强场区具有明显的"趋肤效应": 位于划痕正下方的强场区首先往左右两侧移动, 然后移向抛物口界面以及水平界面, 同时衍生出的多条增强线诱导整个亚表面层的光场增强.     

Z箍缩Al等离子体X辐射谱线的分离及电子温度的提取

以"强光一号"Z箍缩装置10174发次光谱诊断实验结果为例,描述了一种对Z箍缩等离子体X辐射光谱分离提纯、诊断的方法.对连续辐射谱和特征辐射线谱进行分离,并从连续辐射谱和特征辐射线谱中提取了等离子体电子温度信息.结果显示:等离子体连续谱主要由等离子体中心的高温区(Te=290.7 eV±1.2 eV)和温度较低的壳层区域(Te=95.3 eV±8.3 eV)两部分叠加而成;特征辐射线谱主要反映了等离子体中心的高温区信息,根据非局域热动平衡模型计算提取的电子温度约为299—313 eV,与连续谱诊断结果基本符合.     

溶胶-凝胶SiO2薄膜氨热两步后处理

 以正硅酸乙酯为前驱体,氨水作催化剂,采用溶胶-凝胶法提拉镀制SiO₂双面膜,对薄膜进行氨处理和热处理。采用椭偏仪、分光光度计、红外光谱、扫描探针显微镜、静滴接触角测量仪表征薄膜的特性。研究表明：经氨热两步后处理,膜厚持续减小,折射率经氨处理先增大了0.236,再经热处理又减小了0.202,膜层透光性变好,透过率峰值持续向短波方向移动;经两步后处理的膜面平整度明显变好,与水的接触角先增大到58.92°后减小到38.07°。     

Effect of annealing on structural and optical properties of lead tungstate microcrystals

Shuttle-like lead tungstate (PbWO₄) microcrystals are synthesized at room temperature using the precipitation method with the cetyltrimethyl ammonium bromide. Results from both the X-ray diffraction and the scanning electron microscopy show that the lattice distortions of the PbWO₄ microcrystals are reduced significantly when the annealing temperature is increased to 873 K. The result from the ultraviolet-visible diffuse reflectance spectroscopy shows that the exciton absorption appears in the sample annealed at 673 K. The self-trapped exciton luminescence due to the Jahn-Teller effect is also observed in the blue band. The interstitial oxygen ions in the WO₄^2- groups are mainly resposible for the enhancement effect of the green luminescence of the annealed samples. The above results are supported by the spectrum analysis of the as-grown and the post-annealed samples using the X-ray photoelectron spectroscopy.     

不同后处理方法对溶胶-凝胶SiO2膜层抗污染能力的影响

 以正硅酸乙酯作为前驱体,利用碱催化方式制备了SiO₂溶胶,采用提拉法在K9基片上镀制SiO₂单层薄膜,分别用热处理、紫外辐射处理、氨水加六甲基二硅胺烷气氛处理和酸碱复合膜4种后处理法对膜层进行处理,采用分光光度计、红外光谱、扫描探针显微镜、静滴接触角测量仪、椭偏仪等分析了薄膜的特性,通过真空环境加速污染实验对处理前后的膜层进行抗污染能力对比,结果表明：在碱性SiO₂膜层上加镀一层酸性SiO₂膜的复合膜层整体透过率仍保持在99%以上,疏水角达到128°,膜层真空抗污染能力大大加强。     

裂纹或气泡对熔石英损伤修复坑场调制的近场模拟

建立了含有裂纹或气泡的高斯型修复坑的3维模型, 用3维时域有限差分方法研究了熔石英后表面该类缺陷对355 nm入射激光的近场调制. 研究表明, 裂纹的调制明显大于气泡或者高斯坑本身, 因此为了抑制修复元件的初始损伤, 应尽量避免任何未修复的裂纹存在, 尤其是与入射光呈夹角约25°的裂纹, 同时应避免尺寸大于5 λ 的气泡存在. 当裂纹或气泡位于近表面层3 λ 以内且靠近修复坑环边缘时, 对场的调制最明显. 随着侧移的增加, 近表面区缺陷诱导场叠加, 强点总数涨落较大且易形成极大峰值, 特别是含有裂纹的情形; 远表面区强点总数逐渐增大并趋于稳定. 随着嵌深的增加, 强点的数目大体呈减弱趋势, 当嵌深大于3 λ 时, 逐渐趋于平缓振荡. 如果裂纹或气泡位于坑点正下方几个波长内, 激光辐照下其效果相当于延长了高斯坑的深度.     

Rear-surface light intensification caused by Hertzian-conical crack in 355-nm silica optics

Theoretical studies show that the Hertzian-conical crack can be considered to be composed of double cone faces for simplification. In the present study, the three-dimensional finite-difference time-domain method is employed to quantify the electric-field distribution within the subsurface in the presence of such a defect under the normal incidence irradiation. Both impurities (inside the crack) and the chemical etching have been investigated. The results show that the maximum electric field amplitude |E| _max is 9.57374 V/m when the relative dielectric constant of transparent impurity equals 8.5. And the near-field modulation will be improved if the crack filled with remainder polishing powders or water vapor/drops. Meanwhile, the laser-induced initial damage is moving to the glass-air surface. In the etched section, the magnitude of intensification is strongly dependent on the inclination angle θ. There will be a highest modulation when θ is around π /6, and the maximum value of |E| _max is 18.57314 V/m. When θ ranges from π /8 to π /4, the light intensity enhancement factor can easily be larger than 100, and the modulation follows a decreasing trend. On the other hand, the modulation curves become smooth when θ > π /4 or θ < π /8.     

Z箍缩Al等离子体X特征辐射谱线数值模拟及考虑叠加效应后的修正

采用基于细致能级的非局域热动平衡模型,对"强光一号"装置10174发次Z箍缩铝等离子体特征辐射谱进行细致的分析和计算,提取电子密度约为3.5×1021cm-3.数值计算结果显示,采用单一等离子体状态参数不能很好地描述等离子体辐射特征谱线.在进一步的分析计算中,本文初步考虑高温区域和低温区域等离子体特征辐射谱线的叠加效应,将等离子体划分为高温高密度和低温低密度两部分,分析了两部分等离子体辐射对总辐射谱的贡献,并给出了修正后的等离子体辐射谱线.考虑叠加效应后,Heα伴线显著增强,计算结果改善明显.     

Rear-surface light intensification caused by a Hertzian-conical crack in 355-nm silica optics

Theoretical studies show that a Hertzian-conical crack can be considered to be composed of double cone faces for simplicity. In the present study, the three-dimensional finite-difference time-domain method is employed to quantify the electric-field distribution within the subsurface in the presence of such a defect under normal incidence irradiation. Both impurities (inside the crack) and the chemical etching have been investigated. The results show that the maximum electric field amplitude |E| max is 9.57374 V/m when the relative dielectric constant of transparent impurity equals 8.5. And the near-field modulation will be improved if the crack is filled with the remainder polishing powders or water vapor/drops. Meanwhile, the laser-induced initial damage moves to the glass-air surface. In the etched section, the magnitude of intensification is strongly dependent on the inclination angle θ. There will be a highest modulation when θ is around π/6, and the maximum value of |E| max is 18.57314 V/m. When θ ranges from π/8 to π/4, the light intensity enhancement factor can easily be larger than 100, and the modulation follows a decreasing trend. On the other hand, the modulation curves become smooth when θ > π/4 or θ < π/8.