不同后处理方法对溶胶-凝胶SiO2膜层抗污染能力的影响

 以正硅酸乙酯作为前驱体,利用碱催化方式制备了SiO₂溶胶,采用提拉法在K9基片上镀制SiO₂单层薄膜,分别用热处理、紫外辐射处理、氨水加六甲基二硅胺烷气氛处理和酸碱复合膜4种后处理法对膜层进行处理,采用分光光度计、红外光谱、扫描探针显微镜、静滴接触角测量仪、椭偏仪等分析了薄膜的特性,通过真空环境加速污染实验对处理前后的膜层进行抗污染能力对比,结果表明：在碱性SiO₂膜层上加镀一层酸性SiO₂膜的复合膜层整体透过率仍保持在99%以上,疏水角达到128°,膜层真空抗污染能力大大加强。     

短波段光学减反膜的溶胶-凝胶法制备及性能分析

 随着大型激光器的发展，对短波段减反膜的要求日益提高，其中钕玻璃激光三倍频（355nm）的减反射成为新的技术要点。采用溶胶-凝胶工艺合成SiO₂溶胶，采用提拉镀膜法制备纳米多孔SiO₂薄膜，薄膜厚度为75nm，折射率控制在1.22，镀制在石英基底上的薄膜其355nm波长的反射率仅为0.2%。通过氨处理工艺和薄膜的表面修饰，薄膜的抗磨擦性能和疏水性能大大提高，薄膜经过蘸有灰尘、乙醇的棉花球擦洗20次和50次后，透射率最大值仅分别降低0.13% 和 0.39%，与水珠的接触角达到110°。     

非平衡磁控溅射制备类石墨碳膜及性能研究

利用中频非平衡磁控溅射技术在单晶硅基底上沉积了类石墨碳膜, 采用Raman光谱、高分辨透射电子显微镜、原子力显微镜分析了薄膜微观结构和表面形貌; 采用纳米压痕仪和CSM摩擦磨损试验机测试了碳膜力学性能和摩擦学性能. 结果表明: 利用中频非平衡磁控溅射技术沉积的碳膜是一种以sp²键合碳为主、结构非晶、硬度适中、应力较低、表面粗糙度较大、摩擦性能优异的薄膜. 脉冲占空比对薄膜微观结构和性能有显著影响, 随着脉冲占空比的增大, Raman光谱D峰和G峰的强度比I_D/I_G先减小后增大, 而硬度随脉冲占空比的增大却呈现出相反的变化趋势, 即先增大后减小; 大气氛围中的摩擦性能测试表明, 本实验制备的薄膜具有优异的抗磨性能(～10^-11 cm³/N^-1. m^-1)和承载能力(～2.5 GPa). 随脉冲占空比的增大, 薄膜摩擦系数变化甚微而磨损率却呈现先显著减小后轻微增大的变化趋势. 类石墨碳膜优异的摩擦学性能主要归因于其独特的结构、较低的内应力及良好的结构稳定性.     

埋层界面和空气表面和频光谱信号贡献的调控

本文研究表明通过膜厚控制和表面等离激元增强方法可有效区分隐藏界面和空气表面的和频振动光谱信号. 以氟化钙基底支撑的PMMA薄膜为模型，观察到隐藏界面和空气表面对和频信号贡献的变化. 通过监控羰基和甲基伸缩振动基团，发现薄PMMA膜的和频信号来自PMMA/空气表面的化学基团-CH₂、-CH₃、-OCH₃和C=O，而厚PMMA膜的和频信号则来自基底/PMMA埋层界面的-OCH₃和C=O基团. 随制膜浓度增大，埋层界面C=O基团的取向角从65°下降到43°，且浓度大于或等于0.5 wt%时，取向角等于45°±2°. 相比之下，空气表面C=O的取向角落在21°∽38°之间. 在金纳米棒存在条件下，表面等离激元可以极大地增强和频信号，尤其是来自埋层界面信号.     

CO2激光和等离子体清洗提高石英基片损伤阈值

 采用连续CO₂激光和真空等离子体相结合的方法对石英基片进行清洗。通过光学显微图、水接触角、透过率和损伤阈值测量分别表征了CO₂激光和等离子体对真空硅脂蒸发物污染过的石英基片的清洗效果。研究表明：对于真空硅脂蒸发物污染后的石英基片，可以先采用低能量的CO₂激光进行大面积清洗，再用真空等离子体进行精细清洗。光学显微图像表明：清洗后的基片表面的油珠被清除干净；水滴接触角由63°下降到4°；在400 nm附近，基片透过率由92.3%上升到93.3%；损伤阈值由3.77 J/cm²上升到5.09 J/cm²。     

溶胶-凝胶法制备疏水性自组装SiO2薄膜

 以正硅酸乙酯（TEOS）和六甲基二硅氮烷（HMDS）为前驱体,研究了引入聚乙烯吡咯烷酮（PVP）对膜层的影响,在碱催化条件下制备了改性的二氧化硅溶胶,并采用提拉涂膜的方法在石英基底上涂膜。对不同组分的薄膜,先经热处理或紫外辐照处理,然后用十八烷基三氯硅烷（OTS）/甲苯溶液对膜层表面进行化学修饰,制备出疏水性能良好的纳米二氧化硅自组装薄膜,分析了不同后处理方法对膜层透过率、接触角、膜层表面微观形貌和激光损伤阈值影响。实验结果表明：溶胶中加入PVP提高了膜层的平整度,经OTS改性后膜层疏水性和激光损伤阈值均得到提高。     

碳纳米管阵列超双疏性质的发现

用高温裂解酞菁金属络合物方法制备了几种具有不同形貌的阵列碳纳米管膜 ,并对其超疏水和超双疏性质进行了研究 .对于具有均匀长度和外径的阵列碳纳米管膜 ,文章作者发现 ,在未经任何处理时 ,其表现出超疏水和超亲油性质 ,与水的接触角为 15 8 5± 1 5° ,与油的接触角为 0± 1 0°.经氟化处理后 ,则表现出超双疏性质 ,与水和油的接触角分别为 171± 0 5°和 16 1± 1 0° .对具有类荷叶结构的阵列碳纳米管膜 ,其表面形貌与荷叶的十分接近 ,且在未经任何处理时所表现出的超疏水性也与荷叶的非常接近 ,与水的接触角为 16 6° ,滚动角为 8° .这种超疏水和超双疏性质是由表面的纳米结构以及微米结构和纳米结构的结合产生的 .这一发现为无氟超疏水表面 界面材料的研究提供了新的思路     

聚乙烯醇/二氧化硅复合增透膜的制备和可清除性

 用溶胶-凝胶法制备了易清洗的聚乙烯醇/二氧化硅(PVA/SiO₂)复合增透膜。先在K9玻璃基片上镀制PVA薄膜,然后在PVA薄膜上镀上二氧化硅增透膜。用紫外可见光分光光度计、椭偏仪、光学显微镜、扫描探针显微镜和静滴接触角测量仪分别分析了膜层和基片的透射率、膜层厚度和折射率、表面形貌、水接触角等性质,用去离子水作溶剂对复合膜层进行清洗。结果表明：聚乙烯醇/二氧化硅复合增透膜峰值透射率达到99.8％,峰值透射率位置可以随SiO₂厚度而调节。复合膜层能够被热水清除,清除后基片完好,其透射率、表面形貌和水接触角与镀膜前一致。     

CMOS传感器紫外敏化膜层的厚度优化及其光电性能测试

采用真空热阻蒸方式在CMOS图像传感器感光面上镀制不同厚度性比价高的Lumogen薄膜.研究发现不同Lumogen薄膜厚度的CMOS传感器的暗电流噪声未发生明显变化,说明真空热蒸发方式对互补金属氧化物半导体器件本身未造成热损伤;光响应非均匀度随膜厚增加而增大;动态范围却随膜厚增加而减小;量子效率随膜厚增加呈现先增大后减小.同时,研究发现敏化膜层最佳厚度为389nm,此时CMOS传感器的量子效率提高了10%,且光响应非均匀度,动态范围均在相对较好的范围内.     

沉积温度对LaF3薄膜性能的影响

 在189，255，277和321 ℃的沉积温度下用热舟蒸发方法制备了LaF₃薄膜。通过X射线衍射(XRD)测试了薄膜的晶体结构;采用分光光度计测量了薄膜的透射光谱，并计算得到样品的折射率、消光系数和截止波长;利用光学干涉仪测试得到了薄膜的残余应力;采用三倍频Nd:YAG脉冲激光测试了薄膜的激光损伤阈值。结果表明：随沉积温度的提高，LaF₃薄膜的结晶状况明显变好，晶粒尺寸逐渐变大；膜层变得更加致密，折射率变大，然而薄膜吸收变得严重，截止波段向长波漂移，同时薄膜的残余应力也增加，内应力在薄膜的残余应力中起着决定作用；薄膜的激光损伤阈值在高温制备时相对较高。     

Surface modification of a polyamide 6 film by He/CF4 plasma using atmospheric pressure plasma jet

Polyamide 6 (PA 6) films are treated with helium(He)/CF₄ plasma at atmospheric pressure. The samples are treated at different treatment times. The surface modification of the PA 6 films is evaluated by water contact angle, atomic force microscopy (AFM) and X-ray photoelectron spectroscopy (XPS). The etching rate is used to study the etching effect of He/CF₄ plasma on the PA 6 films. The T-peel strengths of the control and plasma treated films are measured to show the surface adhesion properties of the films. As the treatment time increases, the etching rate decreases steadily, the contact angle decreases initially and then increases, while the T-peel strength increases first and then decreases. AFM analyses show that the surface roughness increases after the plasma treatment. XPS analyses reveal substantial incorporation of fluorine and/or oxygen atoms to the polymer chains on the film surfaces.     

Study of thermal stability of ZnO:B films grown by LPCVD technique

Zinc oxide thin films with different boron doping levels (ZnO:B) are prepared by low pressure chemical vapor deposition (LPCVD) technique. All films here exhibit a pyramid-like surface texture. Stability of the ZnO:B films is systematically investigated through a post heat treatment at ambient temperatures of 300 °C and 250 °C for different durations. It is found that total transmission (TT) of these films at near infrared (NIR) wavelength range increases with the enhanced thermal treating intensity, which could be attributed to decrease of free carrier concentration inside the films. Moreover, light absorption in NIR wavelength range decreases profoundly with the increasing carrier concentration after a post thermal treatment in particular for highly doped ZnO:B films. However, morphology of these ZnO:B films does not vary after the thermal treatment and thus the corresponding light scattering properties do not change as well. Therefore, the thermally treated ZnO:B films may lead to an increase in light-generated current and resulting a higher cell efficiency due to the enhancement of TT when they work as front contact in silicon thin film solar cells.     

掺氟SiO_2增透膜真空环境抗污染能力

以正硅酸乙酯为前驱体,采用氨水为催化剂配制SiO2溶胶,在胶体陈化过程中掺入十二氟庚基丙基三甲氧基硅烷对胶体进行改性,并采用溶胶-凝胶法在K9基片上制备了改性的二氧化硅增透膜,用红外光谱仪、分光光度计、原子力显微镜、椭偏仪、静滴接触角测量仪、N2吸附-脱附对膜层性质进行了分析。结果表明:掺氟的二氧化硅膜层增透膜峰值透光率为99.7%;与水的接触角为129°;与二甲基硅油的接触角达到86°;膜层真空抗污染能力比掺氟前大大提高。     

利用氟硅烷提高溶胶-凝胶SiO2增透膜的疏水性

 以正硅酸乙酯为前驱体，氨水为催化剂，采用溶胶 凝胶法制备了二氧化硅增透膜；通过自组装技术，用氟硅烷对膜层进行表面修饰，制得了疏水增透膜，克服了常规增透膜亲水的缺点。采用红外光谱、分光光度计、扫描探针显微镜和静滴接触角测量仪等测试手段分析了薄膜的特性。结果表明：疏水增透膜的峰值透光率为99.7％，疏水角为110°；氟硅烷自组装改性不影响二氧化硅增透膜的光学性能。     

Effect of the heat treatment on the infrared emissivity of indium tin oxide (ITO) films

Indium tin oxide (ITO) films were deposited on glass substrates at temperatures ranging from 100 °C to 400 °C by direct current magnetron sputtering. The mean infrared emissivities at the waveband of 8-14 μm were measured in process of heating and cooling between room temperature and 350 °C. Microstructure and phases of ITO films before (Group A) and after (Group B) heat treatment were characterized by SEM and XRD, respectively. Electrical properties were characterized with a four-point probe method and by Hall measurement system. During heat treatment, the infrared emissivity of the film increases with the increase of temperature, and decreases with the decrease of temperature. While, the infrared emissivity of the films decreases slightly around 250 °C in heating process. On the other hand, after heat treatment, the crystalline phases of the films have no obvious change. However, both the resistivity and the infrared emissivity of all films decrease.     

The kinetics of Cr layer coated on TiNi films for hydrogen absorption

The effect of hydrogen absorption on electrical resistance with temperature for TiNi and TiNi-Cr thin films was investigated. The TiNi thin films of thickness 800 Å were deposited at different angles (? = 0°, 30°, 45°, 60° and 75°) under 10^?5 Torr pressure by thermal evaporation on the glass substrate at room temperature. A layer of Cr of thickness 100 Å was coated on the TiNi thin films. The changing rate of hydrogen absorption increases after Cr layer coating because Cr enhances the catalytic properties of hydrogen absorption in thin films. The rate of hydrogen absorption increases with temperature at lower range but at higher range of temperature it was found to decrease and also it was found that the hydrogen absorption increases with angle of deposition.     

含氮氟化类金刚石(FN-DLC)薄膜的研究：(Ⅲ)疏水性能分析

不同沉积条件下，在单晶硅基底上沉积了含氮氟化类金刚石(FN-DLC)薄膜，用静滴接触角/表面张力测量仪测量了水与FN-DLC膜表面的接触角.用X射线光电子能谱、Raman光谱和傅里叶变换吸收红外光谱(FTIR)分析了薄膜的组分和结构.用原子力显微镜观测了薄膜的表面形貌.结果表明，FN-DLC薄膜疏水性能主要取决于薄膜表面的化学结构、薄膜表面极化强度的强弱、以及薄膜的表面粗糙度的大小.sp³/sp²的比值减小，CF₂基团含量增加，薄膜粗糙度增加，接触角增大；反之，则接触角减小.在工艺上，沉积温度和功率的减小，气体流量比r(r=CF4/［CF₄+CH₄］)的增加，都会使水的浸润性变差，接触角增大. 关键词： 氟化类金刚石膜 疏水性 接触角     

真空磁场热处理温度对不同厚度的Ni88Cu12薄膜畴结构及磁性的影响

利用射频磁控共溅射方法,在Si衬底上制备了Ni88Cu12薄膜,并且研究了膜厚以及真空磁场热处理温度对畴结构和磁性的影响. X射线衍射结果表明热处理后的薄膜晶粒长大,扫描电子显微镜结果发现不同热处理温度下薄膜表现出不同的形貌特征.热处理前后的薄膜面内归一化磁滞回线结果显示,经过热处理的Ni88Cu12薄膜条纹畴形成的临界厚度降低,未热处理的Ni88Cu12薄膜在膜厚为210 nm时出现条纹畴结构,而经过300℃热处理的Ni88Cu12薄膜在膜厚为105 nm就出现了条纹畴结构.高频磁谱的结果表明,随着热处理温度的增加, Ni88Cu12薄膜的共振峰会有小范围的移动.