Dual-wavelength distributed Bragg reflector semiconductor laser based on a composite resonant cavity

We report a monolithic integrated dual-wavelength laser diode based on a distributed Bragg reflector (DBR) composite resonant cavity. The device consists of three sections, a DBR grating section, a passive phase section, and an active gain section. The gain section facet is cleaved to work as a laser cavity mirror. The other laser mirror is the DBR grating, which also functions as a wavelength filter and can control the number of wavelengths involved in the laser action. The reflection bandwidth of the DBR grating is fabricated to have an appropriate value to make the device work at the dual-wavelength lasing state. We adopt the quantum well intermixing (QWI) technique to provide low-absorption loss grating and passive phase section in the fabrication process. By tuning the injection currents on the DBR and the gain sections, the device can generate 0.596 nm-spaced dual-wavelength lasing at room temperature.     

A MOCVD-Growth Multi-Wavelength Laser Monolithically Integrated on InP

We present an arrayed waveguide grating multi-wavelength laser （MWL）. The device is operated with five wave- length channels of 194 GHz spacing around a central wavelength of 1.57μm. A side mode suppression ratio of better than 35 dB for all channels is demonstrated. A very attractive feature of the MWL is that it has been realized by a novel one step regrowth approach to achieve a high quality active and passive interface.     

Wide-Band Polarization-Insensitive High-Output-Power Semiconductor Optical Amplifier Based on Thin Tensile-Strained Bulk InGaAs

A polarization-insensitive semiconductor optical amplifier (SOA) with a very thin active tensile-strained InGaAs bu/k has been fabricated.The polarization sensitivity of the amplifier gain is less than 1 dB over both the entire range of driving current and the 3dB optical bandwidth of more than 8Onto.For optical signals of 1550nm wavelength,the SOA exhibits a high saturation output power 7.6dBm together with a low noise figure of 7.SdB, fibre-to-fibre gain of 11.5dB,and low polarization sensitivity of 0.5dB.Additionally,at the gain peak 1520nm,the fibre-to-fibre gain is measured to be 14.1 dB.     

长波长大应变InGaAs/InGaAsP分布反馈激光器的材料生长与器件制备

采用低压金属有机化合物气相沉积法(LP-MOCVD)生长并制作了1.6—1.7μm大应变InGaAs/InGaAsP分布反馈激光器.采用应变缓冲层技术，得到质量良好的大应变InGaAs/InP体材料.器件采用了4个大应变的量子阱，加入了载流子阻挡层改善器件的温度特性.1.66μm和1.74μm未镀膜的3μm脊型波导器件阈值电流低(小于15mA)，输出功率高(100mA时大于14mW).从10—40℃，1.74μm激光器的特征温度T₀=57K，和1.55μm InGaAsP分布反馈激光器的特征温度相当. 关键词： MOCVD InGaAs/InGaAsP 应变量子阱 分布反馈激光器     

Graded tensile-strained bulk InGaAs/InP superluminescent diode with very wide emission spectrum

A kind of novel broad-band superluminescent diodes (SLDs) using graded tensile-strained bulk InGaAs is developed. The graded tensile-strained bulk InGaAs is obtained by changing only group-Ⅲ trimethylgallium source flow during low-pressure metal organic vapor-phase epitaxy. At the injection current of 200mA, the fabricated SLDs with such structure demonstrate full-width at half-maximum spectral width of 106 nm and the output light power of 13.6 mW, respectively.     

高阶非线性微分方程的全局稳定性

本文通过将高阶非线性自治微分方程转化为Ｌｕｒｉｅ型控制系统的方法，借助于Ｐｏｐｏｖ的频率判据，得到了它们全局渐近稳定的判别准则，推广了文［１］的结果．     

非自治Lotka-Volterra扩散模型的持续生存与周期轨道(英)

本文研究了一类非自治的捕食者一食饵扩散模型；其中食饵能在环境相异的两个缀块间有限制地扩散，但对捕食者来说，缀块间的扩散不受任何限制；另外假设模型的系数都是时间的函数．我们证明了在适当的条件下，这个系统能够持续生存，进一步给出了系统存在唯一全局渐近稳定正周期轨道的充分条件．     

采用单边大光腔结构改善电吸收调制器的光场分布

设计并制备了具有单边大光腔结构的半导体电吸收(electroabsorption，EA)调制器.模拟和测试的结果均表明：单边大光腔结构能有效地改善EA调制器的光场分布，使椭圆形的近场光斑变得圆形化，从而达到与圆形模式光纤之间的匹配，有利于提高耦合效率.     

Integrated electroabsorption-modulated DFB laser by using an improved butt-joint method

An improved butt coupling method is used to fabricate an electroabsorption modulator (EAM) monolithically integrated with a distributed feedback (DFB) laser.The obtained electroabsorption-modulated laser (EML) chip with the traditional shallow ridge exhibits very low threshold current of 12 mA, output power of more than 8 mW,and static extinction ratio of-7 dB at the applied bias voltage from 0.5 to -2.0 V.     

1.55-μm大功率高速直调半导体激光器阵列

提出一种基于AlGaInAs材料的1.55-μm波段的大功率、高速直调分布反馈(DFB)激光器阵列。采用具有良好温度特性和高微分增益的AlGaInAs材料作为量子阱和波导层以实现大功率与高带宽的输出;引入稀释波导结构来减小有源区内部损耗,同时降低远场发散角;采用悬浮光栅并优化耦合系数以实现大注入电流下的单模稳定工作。最终实现了1.5-μm波段5波长的大功率直调激光器阵列,阵列波长间隔约为5 nm,室温连续波(CW)工作时各通道输出光功率均大于100 mW,单通道最大输出光功率为160 mW,500 mA工作电流范围内边模抑制比大于55 dB,小信号调制带宽可达7 GHz,激光器最小线宽为520 kHz,相对强度噪声低于-145 dB/Hz。