Wide-Band Polarization-Insensitive High-Output-Power Semiconductor Optical Amplifier Based on Thin Tensile-Strained Bulk InGaAs

A polarization-insensitive semiconductor optical amplifier (SOA) with a very thin active tensile-strained InGaAs bu/k has been fabricated.The polarization sensitivity of the amplifier gain is less than 1 dB over both the entire range of driving current and the 3dB optical bandwidth of more than 8Onto.For optical signals of 1550nm wavelength,the SOA exhibits a high saturation output power 7.6dBm together with a low noise figure of 7.SdB, fibre-to-fibre gain of 11.5dB,and low polarization sensitivity of 0.5dB.Additionally,at the gain peak 1520nm,the fibre-to-fibre gain is measured to be 14.1 dB.     

Graded tensile-strained bulk InGaAs/InP superluminescent diode with very wide emission spectrum

A kind of novel broad-band superluminescent diodes (SLDs) using graded tensile-strained bulk InGaAs is developed. The graded tensile-strained bulk InGaAs is obtained by changing only group-Ⅲ trimethylgallium source flow during low-pressure metal organic vapor-phase epitaxy. At the injection current of 200mA, the fabricated SLDs with such structure demonstrate full-width at half-maximum spectral width of 106 nm and the output light power of 13.6 mW, respectively.     

功能化的H2QS-CdS纳米微粒的合成及表征

采用新颖的方法配体交换法制备8-羟基喹啉-5-磺酸(H2QS)功能化的CdS纳米微粒,通过IR、1H-NMR等测试,证明H2QS成功的修饰在ME-CdS纳米微粒表面,TEM和XRD测试表明,功能化的H2QS-CdS纳米微粒均匀分散没有聚集,且其粒径与纯的ME-CdS纳米微粒比较基本没有发生改变,仍为2～4nm左右。功能化的H2QS-CdS纳米微粒的最大发射峰与ME-CdS相比发生蓝移,且发光效率显著提高,并对其发光机理进行理论分析。     

基于未修饰纳米金及无标记单链DNA的Pb~(2+)比色测定

根据纳米金对ss DNA和G-四联体结构的DNA的不同吸附能力,设计了一种简单的Pb2+比色传感器。富含G的无标记ss DNA可以通过静电作用吸附于Au NPs表面,保护Au NPs在高盐浓度溶液中仍呈分散态;当Pb2+存在时,DNA与Pb2+结合形成Pb2+-G-四联体结构,使得Au NPs失去DNA的保护而发生聚集,溶液颜色由红色变成蓝色,最大吸收峰发生红移。通过优化条件,得到溶液吸光度比值(A630/A520)与Pb2+浓度在0.1~10μmol/L范围内呈良好的线性关系,检出限可达50 nmol/L。其他金属离子对Pb2+的检测几乎无干扰。该方法灵敏度高,选择性好,且无需复杂的Au NPs表面修饰过程及DNA标记,制备和操作简便、成本低、响应快(1 min),非常适合于现场实时应用。     

粉状褐煤流化萃取褐煤蜡工艺开发研究

流化萃取褐煤蜡新工艺将散式流态化技术用于液固萃取过程,以溶剂为动力,携带煤粒,实现流化连续萃取。在实验室研究的基础上,完成了生产能力为100吨蜡/年的中间试验,提出了适宜的操作条件。用平均含蜡量7.15%、含水量约23%、灰分12%的寻甸褐煤为原料,萃取率达到65～70%,苯耗量0.46吨/吨蜡。所得产品蜡含水份1.12%,灰份0.3%,熔点84℃,苯不溶物0.61%,树脂21.16%,地沥青11.54%,酸值为35.50,皂化值为102.25。该试验为工业生产装置的设计提供了基础数据。     

突破衍射极限的超级透镜技术及其应用研究

基于超材料的超级透镜能让携带物体高频信息的倏逝波分量参与成像,从而实现对小于半个工作波长的超精细结构的分辨。分析了几种典型的超透镜,如近场、远场和双曲超透镜的工作原理和研究进展,并对超透镜技术在实时生物成像、高密度光存贮、光刻等方面的应用前景进行了分析和总结。     

Graded tensile-strained bulk InGaAs/InP superluminescent diode with very wide emission spectrum

A kind of novel broad-band superluminescent diodes (SLDs) using graded tensile-strained bulk InGaAs is developed. The graded tensile-strained bulk InGaAs is obtained by changing only group-Ⅲ trimethyl-gallium source flow during low-pressure metal organic vapor-phase epitaxy. At the injection current of 200 mA, the fabricated SLDs with such structure demonstrate full-width at half-maximum spectral width of 106 nm and the output light power of 13.6 mW, respectively.