Tensile-strained 1.3 μm InGaAs/InGaAlAs quantum well structure of high temperature characteristics

A new tensile strained InGaAs/InGaAlAs quantum well structure in the 1.3 μm wavelength region is proposed for high temperature characteristics via quantum well band structure and optical gain calculations. To obtain such features, a tensile-strained InGaAs/InGaAlAs quantum well structure, which emits light dominated by TM polarization, is considered. This proposed structure has very high temperature characteristics (T ₀ > 130 K) due to its high density of state at the first transition edge. This results clearly show the potential of tensile strained quantum well structure usage for the high temperature operation of quantum well semiconductor lasers.     

不同盖层对InAs/GaAs量子点结构和光学性质的影响

利用金属有机化合物气相沉积设备生长了不同盖层结构的InAs/GaAs量子点,采用原子力显微镜和光致发光光谱仪对量子点的结构和光学性质进行了研究.量子点层之间的盖层由一个低温层和一个高温层组成.对不同材料结构的低温盖层的对比研究表明,In组分渐变的InGaAs低温盖层有利于改善量子点均匀性、减少结合岛数目、提高光致发光强度;当组分渐变InGaAs低温盖层厚度由6.8 nm增加到12 nm,发光波长从1256.0 nm红移到1314.4 nm.另外,还对不同材料结构的高温盖层进行了对比分析,发现高温盖层采用In组分渐变的InGaAs材料有利于光致发光谱强度的提高. 关键词： 半导体量子点 盖层 组分渐变     

Feasibility study of low-power multiquantum-well vertical transmission optical amplifiers for optical interconnection

Performance of 0.98-μm InGaAs strained multiquantum-well Fabry-Perot vertical transmission optical amplifiers (MQW FP VTOAs) for optical inter-board connection is analyzed theoretically, and compared with those of GaAs MQW, GaAs bulk, and InGaAsP bulk VTOAs. A low-power operation of about 2 mA and a cascadability of several hundred boards are predicted for an InGaAs strained MQW FP VTOA.     

Strained germanium films in Ge/InGaAs/GaAs heterostructures: Formation of edge misfit dislocations at the Ge/InGaAs interface

Heterostructures of the “strained Ge film/artificial InGaAs layer/GaAs substrate” type have been grown by molecular beam epitaxy. A specific feature of these structures is that the plastically relaxed (buffer) InGaAs layer has the density of threading dislocations on a level of 10⁵–10⁶ cm⁻². These dislocations penetrate into the strained Ge layer to become sources of both 60° and 90° (edge) misfit dislocations (MDs). Using the transmission electron microscopy, both MD types have been found at the Ge/InGaAs interface. It has been shown that the presence of threading dislocations inherited from the buffer layer in a tensile-strained Ge film favors the formation of edge dislocations at the Ge/InGaAs interface even in the case of small elastic deformations in the strained film. Possible mechanisms of the formation of edge MDs have been considered, including (i) accidental collision of complementary parallel 60° MDs propagating in the mirror-tilted {111} planes, (ii) induced nucleation of a second 60° MD and its interaction with the primary 60° MD, and (iii) interaction of two complementary MDs after a cross-slip of one of them. Calculations have demonstrated that a critical layer thickness (h _c ) for the appearance of edge MDs is considerably smaller than h _c for 60° MDs.     

Recombination in tensile-strained In0.3Ga0.7As quantum well on InP

Photoluminescence (PL) measurements under different excitation powers were carried out at low temperature on tensile-strained In_0.3Ga_0.7As single wells of 6 nm with InGaAs barriers lattice matched to InP substrate. PL measurements taken at 2 K show a main emission band at 0.762 eV probably originating from a type-II transition. The insertion of an ultrathin InAs layer at In_0.3Ga_0.7As on In_0.53Ga_0.47As interface reveals an additional feature at 0.711 eV as well as an excited-state luminescence emission at high pump powers. The InAs insertion improves heterointerface quality, which was confirmed by an increase in PL intensity.     

Wideband steady-state numerical model of a tensile-strained bulk semiconductor optical amplifier

A wideband steady-state numerical model of a tensile-strained bulk InGaAsP semiconductor optical amplifier (SOA) is presented. The model is based on a set of travelling wave equations that govern the propagation of the amplified signal and spontaneous emission photon rates and a carrier density rate equation. The model is applicable over a wide range of operating regimes and can be used to determine the effects of varying the amplifier geometric and material parameters. Simulations and comparisons with experiment are given which demonstrate the versatility of the model.     

带有InGaAs覆盖层的InAs量子点红外探测器材料的发光与光电响应

利用分子束外延技术(MBE),在GaAs(001)衬底上自组织生长了不同结构的InAs量子点样品,并制备了量子点红外探测器件。利用原子力显微镜(AFM)和光致发光(PL)光谱研究了量子点的表面结构、形貌和光学性质。渐变InGaAs层的插入有效地释放了InAs量子点所受的应力,抑制了量子点中In组分的偏析,提高了外延层的生长质量,降低了势垒高度,使InAs量子点荧光波长红移。伏安特性曲线和光电流(PC)谱结果表明,生长条件的优化提高了器件的红外响应,具有组分渐变的InGaAs层的探测器响应波长发生明显红移。     

基于SOA全光偏振调制的双信道光传输系统的仿真与分析

仿真并分析了基于半导体光放大器全光偏振调制的双信道光传输系统模型.该系统分别利用两级半导体光放大器的交叉偏振调制效应(XPolM),将两路独立的强度调制的抽运光变换到一路探测光的两个正交的偏振态上,实现双通道偏振复用的全光数据传输.首先对单个半导体光放大器的动力学过程进行了理论分析,数值计算了具有不同抽运光功率的半导体光放大器对探测光偏振态的影响,进而对双半导体光放大器偏振复用系统的调制/解调原理进行了分析,模拟仿真了双半导体光放大器的双通路偏振复用的调制及解调过程,仿真结果与实验结果相符.     

Theoretical analysis of the effect of temperature dependence of Auger coefficient on the turn-on time delay of uncooled semiconductor laser diodes

In this paper, a novel interpretation of the effect of Auger recombination coefficient (C) on the turn-on time delay (t_on) of semiconductor laser diodes (SLDs) is presented. To the date, the well-known conclusion is that the main effect of C is to decrease t_on. This is because the earlier studies were based on less physical assumptions. Contrarily, we show that the general effect of C is to increase t_on. This conclusion is supported by including the effect of temperature of operation (T) on t_on of uncooled SLDs. Advanced analytical model is presented to determine t_on analytically and in term of nonradiative (A), radiative (B) and C recombination coefficients. The derived model can be applied to bulk and multiple quantum-well (MQW) long-wavelength SLDs at any value of temperature of operation degree (T) within the range 25-85 °C. The temperature dependence of t_on is calculated according to the temperature dependences of C and threshold carrier density (N_th). The temperature dependence of the latter is calculated according to the temperature dependence of laser cavity parameters and not by the well-known Parkovian relationship. Numerical and analytical results show that t_on increases as T increases due to increasing of N_th and C which its effect dominates at high temperature degrees. In addition, we show that the effect of temperature dependence of t_on in MQW SLD is smaller than the bulk one. Moreover, MQW SLD needs a lower injection current than the bulk one to achieve the same value of t_on.     

Numerical analysis of four-wave mixing between picosecond mode-locked laser pulses in a tensile-strained bulk SOA

A numerical model of four-wave mixing between picosecond pulses in a tensile-strained bulk semiconductor optical amplifier is presented. The model utilizes a modified Schrödinger equation to model pulse propagation. The Schrödinger equation parameters such as the material gain first and second order dispersion, linewidth enhancement factors and optical loss coefficient were obtained using a previously developed steady-state model. The predicted four-wave mixing pulse characteristics show reasonably good agreement with experimental pulse characteristics obtained using Frequency Resolved Optical Gating. In particular simulations predict a large increase in the pulse pedestals of the FWM converted pulse, which is verified by experiment.     

Effect of graded triple delta-doped sheets on the performance of GaAs based dual channel pseudomorphic high electron mobility transistors

The characteristics of InGaP/InGaAs/GaAs dual channel pseudomorphic high electron mobility transistors (DCPHEMTs) with different graded triple delta-doped sheets are investigated and experimentally demonstrated. Based on a two-dimensional simulator of ATLAS, the band diagrams, electron densities and DC characteristics of studied devices are comprehensively analyzed. Due to the use of properly graded triple delta-doped sheets, good pinch-off and saturation characteristics, improved transport properties and wide current swing are obtained. For comparison, a practical DCPHEMT with good device performances is fabricated as well. It is found that the simulated data are in good agreement with experimental results.     

The Fabrication and Characterization of Polarization Insensitive Semiconductor Optical Amplifier

An angled facet strained bulk InGaAs SOA has been designed and fabricated. A device with double-layer antireflection coatings had <2dB polarization sensitivity and <0.5dB gain ripple.     

Probing unfolded acoustic phonons with X rays

Ultrafast laser excitation of an InGaAs/InAlAs superlattice (SL) creates coherent folded acoustic phonons that subsequently leak into the bulk (InP) substrate. Upon transmission, the phonons become "unfolded" into bulk modes and acquire a wave vector much larger than that of the light. We show that time-resolved x-ray diffraction is sensitive to this large-wave vector excitation in the substrate. Comparison with dynamical diffraction simulations of propagating strain supports our interpretation.     

Novel optical probe for quantum Hall system

Surface photovoltage (SPV) spectroscopy has been used for the first time to explore Landau levels of a two-dimensional electron gas (2DEG) in modulation doped InP/InGaAs/InP QW in the quantum Hall regime. The technique gives spectroscopically distinct signals from the bulk Landau levels and the edge states. Evolution of the bulk Landau levels and the edge electronic states is investigated at 2.0 K for magnetic field up to 8 T using SPV spectroscopy.     

A note on open‐chain transfer matrices from q‐deformed su(2|2)S‐matrices

In this note, we perform Sklyanin's construction of commuting open‐chain/boundary transfer matrices to the q‐deformed SU(2|2) bulk S‐matrix of Beisert and Koroteev and a corresponding boundary S‐matrix. This also includes a corresponding commuting transfer matrix using the graded version of the q‐deformed bulk S‐matrix. Utilizing the crossing property for the bulk S‐matrix, we argue that the transfer matrix for both graded and non‐graded versions contains a crucial factor which is essential for commutativity.     

赝形InGaAs/InAlAs渐变异质结中的零磁场自旋分裂

在赝形渐变InGaAs/In_0.52Al_0.48As异质结的二维电子气中,发现了自旋方向向上的电子和自旋向下的电子在零磁场下存在着自旋分裂.利用Shubnikov-de Haas振荡研究了异质结中的自旋分裂行为,通过振荡中的拍频现象,发现了零磁场下的自旋分裂量为8.76meV. 关键词：     

异质结界面电荷对突变InP/InGaAs异质结双极晶体管热场发射影响研究

异质结界面电荷的存在改变了异质结的内建势, 这引起了界面势垒尖峰高度和形状的扰动, 从而使异质结界面载流子的输运产生相应的变化, 最终导致异质结双极晶体管 (HBT) 性能的改变. 基于热场发射-扩散模型, 对异质结界面电荷对InP/InGaAs HBT性能的改变做了研究, 得到结论是正极性的界面电荷有利于InP/InGaAs HBT的直流和高频特性的改善, 而负极性的界面电荷则使器件的直流和高频特性变差. 关键词： InP/InGaAs异质结双极晶体管 界面电荷 内建势 热场发射     

Hole capture rate of GaInAs/InP strained quantum-well lasers

The property of hole capture of quantum wells is important in the static properties of lasers above threshold, such as the differential efficiency and light output power. We investigate experimentally the hole capture rate and its influence on the carrier overflow in the optical confinement layers for compressive-strained, tensile-strained and unstrained GaInAs/GaInAsP/InP quantum-well lasers emitting at 1.5 m by measuring the spontaneous emission from the optical confinement layers above threshold. The carrier density in the optical confinement layers increases with current owing to finite hole capture rates. This increase is dependent on well thickness and barrier height determined by the strain. This increase is comparable in the tensile-strained and unstrained lasers with relatively low threshold, while in the compressive-strained laser it is about double that in the other two types. The dependence of this increase on threshold carrier density is also observed, that is the carrier density in the optical confinement layers increases rapidly in high-threshold samples, in particular, in the tensile-strained laser with large hole barrier height. From these results, laser operation with high output power and high efficiency is expected by reducing threshold carrier density in the tensile-strained laser and by increasing well numbers in the compressive-strained laser as long as the inhomogeneous injection between wells is not severe. By fitting measurements with theory, the hole capture time is estimated as 0.1 to 0.25 ps in these strained and unstrained lasers.     

Application of band theory to experimental eigen-state energies of In0.53Ga0.47As quantum wells lattice-matched to InP

Nonparabolic band structure of InGaAs/InAlAs multi-quantum wells was studied theoretically and experimentally. The electron effective mass was derived even from eigen-states and this nonparabolicity was explicitly determined as a function of energy. Electron eigen-state energies applying Kane’s bulk band theory fitted very well with our experiments in the multi-quantum wells.     

Dark current modeling of InP based SWIR and MWIR InGaAs/GaAsSb type-II MQW photodiodes

This paper reports the dark current characteristics of SWIR and MWIR p–i–n photodiodes with type-II InGaAs/GaAsSb multiple quantum wells as the absorption region. A bulk based model with the effective band gap of the type-II quantum well structure has been used. We investigated the dark current contributing mechanisms that are limiting the electrical performance of these photodiodes. The quantitative simulation of the I–V characteristics shows that the performance of InGaAs/GaAsSb photodiodes is dominated by generation-recombination component at the temperature between 200 and 290 K for reverse biases below 5 V. Trap-assisted tunneling current and direct tunneling current begin to dominate when the reverse bias is higher than 10 V.