排序方式: 共有32条查询结果,搜索用时 31 毫秒
1.
采用简单易行的浸渍法将Pt纳米粒子负载到MIL-101(Cr)上,制备了Pt/MIL-101(Cr)催化剂,并对其在肉桂醛选择性加氢反应的催化性能进行了研究。XRD、N2吸附、TEM和催化性能的研究结果表明,Pt的负载量对负载于MIL-101(Cr)上Pt纳米粒子的尺寸及所制备催化剂对肉桂醇的选择性有很大影响。低Pt负载量(1.0%)的Pt/MIL-101(Cr)较其他MOFs和无机材料在肉桂醛选择性加氢反应中表现出了高的催化性能,在优化的反应条件下肉桂醛转化率和对肉桂醇的选择性可分别达96.5%和86.2%。Pt/MIL-101(Cr)催化剂具有良好的稳定性。Pt/MIL-101(Cr)所表现出的优良的催化性能同MIL-101(Cr)载体的孔道结构及其表面性质密切相关。 相似文献
2.
制备了一种基于螺旋线形跨尺度结构的酶传感器,并对该传感器进行了表征和性能测试.将30μm键合Au丝以螺旋线方式手工缠绕在125μm光纤纤芯上,在该Au螺旋线上用水浴法合成ZnO纳米线,得到螺旋线形跨尺度结构;在ZnO纳米线上物理吸附葡萄糖氧化酶(GOD),制备了葡萄糖传感器工作电极.利用扫描电子显微镜(SEM)图像和MatLab图像处理算子分别对螺旋线形跨尺度结构表面形貌及其上活力为50 units/mg的GOD吸附效果进行了定性和定量表征,分析了非高斯粗糙表面与GOD吸附效果的影响关系.基于三电极体系采用循环伏安法和计时安培法测试了制备的12个工作电极的性能,测得该类传感器的灵敏度为(1.410±0.665)μA·L/(mmol·cm2),线性范围为0~(4.292±0.652)mmol/L,Michaelis-Menten常数为(3.571±1.280)mmol/L,检出限为(14.085±8.393)μmol/L.使用活力更高的GOD可以得到性能更好的螺旋线形跨尺度葡萄糖传感器.该类传感器可广泛应用于医药、生物、食品加工及环境监测领域中尿酸、尿素、胆固醇、过氧化氢和苯酚等的检测. 相似文献
3.
采用简单易行的浸渍法将Pt纳米粒子负载到MIL-101(Cr)上, 制备了Pt/MIL-101(Cr)催化剂, 并对其在肉桂醛选择性加氢反应的催化性能进行了研究。XRD、N2吸附、TEM和催化性能的研究结果表明, Pt的负载量对负载于MIL-101(Cr)上Pt纳米粒子的尺寸及所制备催化剂对肉桂醇的选择性有很大影响。低Pt负载量(1.0wt%)的Pt/MIL-101(Cr)较其他MOFs和无机材料在肉桂醛选择性加氢反应中表现出了高的催化性能, 在优化的反应条件下肉桂醛转化率和对肉桂醇的选择性可分别达96.5%和86.2%。Pt/MIL-101(Cr)催化剂具有良好的稳定性。Pt/MIL-101(Cr)所表现出的优良的催化性能同MIL-101(Cr)载体的孔道结构及其表面性质密切相关。 相似文献
4.
采用水热法成功地合成了一种含有亚微米级孔洞的微孔磷酸盐晶体材料(记为HAP-TAP),其形貌特征是:六棱柱形的晶体表面分布着大量0.4~0.8μm的亚微米级孔洞,孔洞内长有片层状晶体.在样品晶化的过程中,通过控制合成时间,获得了纯六棱柱形晶体的大单晶(记为HAP).使用扫描电子显微镜(SEM)、粉末X射线衍射(XRD)、红外光谱和电子能谱(EDX)对HAP-TAP独特形貌的形成机理进行了研究和揭示.HAP的单晶XRD数据表明,HAP是一种具有二维空旷骨架结构的新型微孔磷酸铝晶体,其分子式为Al5(OH)2(PO4)7(C2N2H10)3.0.5H2O.EDX分析结果表明,生长于六棱柱形晶体孔洞内的片层状晶体为磷酸钛铝材料. 相似文献
5.
Wide-Band Polarization-Insensitive High-Output-Power Semiconductor Optical Amplifier Based on Thin Tensile-Strained Bulk InGaAs 总被引:2,自引:0,他引:2 下载免费PDF全文
A polarization-insensitive semiconductor optical amplifier (SOA) with a very thin active tensile-strained InGaAs bu/k has been fabricated.The polarization sensitivity of the amplifier gain is less than 1 dB over both the entire range of driving current and the 3dB optical bandwidth of more than 8Onto.For optical signals of 1550nm wavelength,the SOA exhibits a high saturation output power 7.6dBm together with a low noise figure of 7.SdB, fibre-to-fibre gain of 11.5dB,and low polarization sensitivity of 0.5dB.Additionally,at the gain peak 1520nm,the fibre-to-fibre gain is measured to be 14.1 dB. 相似文献
6.
采用低压金属有机化合物气相沉积法(LP-MOCVD)生长并制作了1.6—1.7μm大应变InGaAs/InGaAsP分布反馈激光器.采用应变缓冲层技术,得到质量良好的大应变InGaAs/InP体材料.器件采用了4个大应变的量子阱,加入了载流子阻挡层改善器件的温度特性.1.66μm和1.74μm未镀膜的3μm脊型波导器件阈值电流低(小于15mA),输出功率高(100mA时大于14mW).从10—40℃,1.74μm激光器的特征温度T0=57K,和1.55μm InGaAsP分布反馈激光器的特征温度相当.
关键词:
MOCVD
InGaAs/InGaAsP
应变量子阱
分布反馈激光器 相似文献
7.
A kind of novel broad-band superluminescent diodes (SLDs) using graded tensile-strained bulk InGaAs is developed. The graded tensile-strained bulk InGaAs is obtained by changing only group-Ⅲ trimethylgallium source flow during low-pressure metal organic vapor-phase epitaxy. At the injection current of 200mA, the fabricated SLDs with such structure demonstrate full-width at half-maximum spectral width of 106 nm and the output light power of 13.6 mW, respectively. 相似文献
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9.
Monolithic Integration of Sampled Grating DBR with Electroabsorption Modulator by Combining Selective-Area-Growth MOCVD and Quantum-Well Intermixing 下载免费PDF全文
We present the monolithic integration of a sampled-grating distributed Bragg reflector (SG-DBR) laser with a quantum-well electroabsorption modulator (QW-EAM) by combining ultra-low-pressure (55 mbar) selectivearea-growth (SAG) metal-organic chemical vapour deposition (MOCVD) and quantum-well intermixing (QWI) for the first time. The QW-EAM and the gain section can be grown simultaneously by using SAG MOCVD technology. Meanwhile, the Q WI technology offers an abrupt band-gap change between two functional sections, which reduces internal absorption loss. The experimental results show that the threshold current Ith = 62 mA, and output power reaches 3.6roW. The wavelength tuning range covers 3Ohm, and all the corresponding side mode suppression ratios are over 30dB. The extinction ratios at available wavelength channels can reach more than 14dB with bias of-5 V. 相似文献
10.
A new compact three-port InP based PD/EAM (photo-detector/electro-absorption modulator) integrated photonic switch is reported. The device demonstrates bi-directional wavelength conversion over 20nm at 2.5 Gbit/s with a low input optical power of about 20mW. 相似文献