多台阶器件结构深层表面光刻工艺优化

针对多台阶器件结构深层表面光刻工艺中存在的问题,对不同台阶高度分别测量了台阶表面及台阶底部沉积的光刻胶厚度,并对台阶高度与光刻胶厚度的关系进行数值描述与分析.基于Beer定律对薄光刻胶光吸收系数的描述,分析了通过实验得到的不同曝光时间下光刻胶的光强透过率曲线,解释了随着曝光时间的增加光刻胶光强透过率发生变化的原因,同时认为光刻胶光吸收系数与光刻胶厚度密切相关.在此基础上,确定了台阶底部堆积光刻胶完全曝光所需时间.优化平面光刻工艺,在不同台阶高度的深台阶表面及底部同时制作出窄线条的高质量图形.     

片上制备横向结构ZnO纳米线阵列紫外探测器件

将纳米技术与传统的微电子工艺相结合, 片上制备了横向结构氧化锌(ZnO)纳米线阵列紫外探测器件, 纳米线由水热法直接自组织横向生长于叉指电极之间, 再除去斜向的多余纳米线, 其余工艺步骤与传统工艺相同. 分别尝试了铬(Cr)和金(Au)两种金属电极的器件结构: 由于Cr电极对其上纵向生长的纳米线有抑制作用, 导致横向生长纳米线长度可到达对侧电极, 光电响应方式为受表面氧离子吸附控制的光电导效应, 光电流大但增益低, 响应速度慢, 经二次电极加固, 纳米线根部与电极金属直接形成肖特基接触, 光电响应方式变为光伏效应, 增益和速度得到了极大改善; 由于Au电极对其上纵向生长的纳米线有催化作用, 导致溶质资源的竞争, 相同时间内横向生长的纳米线不能到达对侧, 而是交叉桥接, 但却形成了紫外光诱导的纳米线间势垒结高度调控机理, 得到的器件特性为最优, 在波长为365 nm的20 mW/cm²紫外光照下, 1 V电压时暗电流为10^-9 A, 光增益可达8×10⁵, 响应时间和恢复时间分别为1.1 s和1.3 s.     

Influence of dislocations in the GaN layer on the electrical properties of an AlGaN/GaN heterostructure

This paper reports on a comparative study of the spatial distributions of the electrical, optical, and structural properties in an AlGaN/GaN heterostructure. Edge dislocation density in the GaN template layer is shown to decrease in the regions of the wafer where the heterostructure sheet resistance increases and the GaN photoluminescence band-edge energy peak shifts to a high wavelength. This phenomenon is found to be attributed to the local compressive strain surrounding edge dislocation, which will generate a local piezoelectric polarization field in the GaN layer in the opposite direction to the piezoelectric polarization field in the AlGaN layer and thus help to increase the two-dimensional electron gas concentration.     

Investigation of passivation effects in AlGaN/GaN metal-insulator-semiconductor high electron-mobility transistor by gate-drain conductance dispersion study

This paper studies the drain current collapse of AlGaN/GaN metal-insulator-semiconductor high electron-mobility transistors (MIS-HEMTs) with NbAlO dielectric by applying dual-pulsed stress to the gate and drain of the device.For NbAlO MIS-HEMT,smaller current collapse is found,especially when the gate static voltage is 8 V.Through a thorough study of the gate-drain conductance dispersion,it is found that the growth of NbAlO can reduce the trap density of the AlGaN surface.Therefore,fewer traps can be filled by gate electrons,and hence the depletion effect in the channel is suppressed effectively.It is proved that the NbAlO gate dielectric can not only decrease gate leakage current but also passivate the AlGaN surface effectively,and weaken the current collapse effect accordingly.     

AlGaInP大功率发光二极管发光效率与结温的关系

目前,AlGaInP大功率发光二极管(LED)存在的主要问题是大电流工作时发热严重,主要是由于电流扩展不均匀、出光面电极对光子的阻挡和吸收以及器件材料与空气折射率之间的差距引起的全反射现象,这些因素造成大功率LED出光受到限制、发光效率低、亮度不高.提出了一种复合电流扩展层和复合分布式布拉格反射层(DBR)的新型结构LED,使得注入电流在有源区充分地扩散,同时提高了常规单DBR对光子的反射率.结果显示,这种新型结构LED比常规结构LED的性能得到了很大的提升,350 mA注入电流下两者的输出光功率分别为4 关键词： 复合电流扩展层 复合分布式布拉格反射层 出光效率 结温     

Understanding of surface pit formation mechanism of GaN grown in MOCVD based on local thermodynamic equilibrium assumption

Frank's theory describes that a screw dislocation will produce a pit on the surface,and has been evidenced in many material systems including GaN.However,the size of the pit calculated from the theory deviates significantly from experimental result.Through a careful observation of the variations of surface pits and local surface morphology with growing temperature and V/III ratio for c-plane GaN,we believe that Frank's model is valid only in a small local surface area where thermodynamic equilibrium state can be assumed to stay the same.If the kinetic process is too vigorous or too slow to reach a balance,the local equilibrium range will be too small for the center and edge of the screw dislocation spiral to be kept in the same equilibrium state.When the curvature at the center of the dislocation core reaches the critical value 1/r_0,at the edge of the spiral,the accelerating rate of the curvature may not fall to zero,so the pit cannot reach a stationary shape and will keep enlarging under the control of minimization of surface energy to result in a large-sized surface pit.     

Comparison of hot-hole injections in ultrashort channel LDD nMOSFETs with ultrathin oxide under an alternating stress

The behaviours of three types of hot-hole injections in ultrashort channel lightly doped drain (LDD) nMOSFETs with ultrathin oxide under an alternating stress have been compared. The three types of hot-hole injections, i.e. low gate voltage hot hole injection (LGVHHI), gate-induced drain leakage induced hot-hole injection (GIDLIHHI) and substrate hot-hole injection (SHHI), have different influences on the devices damaged already by the previous hot electron injection (HEI) because of the different locations of trapping holes and interface states induced by the three types of injections, i.e. three types of stresses. Experimental results show that GIDLIHHI and LGVHHI cannot recover the degradation of electron trapping, but SHHI can. Although SHHI can recover the device's performance, the recovery is slight and reaches saturation quickly, which is suggested here to be attributed to the fact that trapped holes are too few and the equilibrium is reached between the trapping and releasing of holes which can be set up quickly in the ultrathin oxide.     

新型AlGaInP系发光二极管饱和特性与寿命的研究

针对AlGaInP系发光二极管(LED)电极阻挡出光、衬底吸收、全反射角小导致器件出光效率低、热积累大、饱和特性差等问题,提出了一种具有复合电流输运增透窗口层、复合DBR反射镜和电流阻挡层结构的新型LED,并测试了其饱和特性和寿命.电流分布模拟显示:新型LED电极下仅存在极小的无效电流;实验结果表明新型LED出光效率高,饱和电流大,饱和电流时光强约为常规LED的3倍,光电性能明显提升.器件饱和特性和老化实验研究显示:新型LED寿命长达17.8×104h,器件内部发热量低,具有高饱和特性和高可靠性,适合在大电流大功率下工作.