小比距离密闭空腔爆炸爆后气体温度和压力测量技术研究

为实现空腔爆炸温度、压力变化趋势的准确测量，基于铠装K型热电偶和压力变送器，建立密闭空腔爆后气体温度、压力测量系统。设计密封隔热防护装置，将传感器的敏感端与信号调理模块分别安装在两个密封腔内，有效提高了传感器在大当量爆炸冲击条件下的存活率。在0.86 m/kg1/3比距离密闭空腔大当量爆炸条件下，对传感器及防护装置的性能进行考核验证，爆后测量采集到了有效的气体温度及压力变化历程，且传感器状态能够最终恢复至正常状态。测试结果表明，使用密封隔热安装的K型热电偶和压力变送器可以满足小比距离密闭空腔爆后气体静态温度、压力测量需求。     

一列非同构的离散交叉积

本文研究了R上的一类离散交叉积的因子结构及其在小波分析中的应用问题.利用群测度构造离散交叉积的方法,我们构造了R上的一列离散交叉积,并且利用比率集的方法证明了上述交叉积是互相不同构的超有限III_γ型因子.上述结论推广了已有的一些结果.     

The effects of substrate temperature on ZnO-based resistive random access memory devices

Ag/ZnO/Zn/Pt structure resistive switching devices are prepared by radio frequency magnetron sputtering.The ZnO thin films are grown at room temperature and 400 C substrate temperature,respectively.By comparing the data,we find that the latter device displayed better stability in the repetitive switching cycle test,and the resistance ratio between a high resistance state and a low resistance state is correspondingly increased.After 104-s storage time measurement,this device exhibits a good retention property.Moreover,the operation voltages are very low:-0.3 V/-0.7 V(OFF state) and 0.3 V(ON state).A high-voltage forming process in the initial state is not required,and a multistep reset process is demonstrated.     

作用在n维欧氏空间R~n上的离散交叉积

主要研究作用在n维欧氏空间R~n上的离散交叉积■_n■_αG_A,b_1,…,b_n的代数性质与因子分类.首先证明了该交叉积是内射的;其次给出了该交叉积为因子的一些充要条件;最后讨论该交叉积为因子时究竟是几型因子.     

Pt原子在γ-Al2O3(001)表面的吸附及迁移

采用密度泛函理论(DFT)中广义梯度近似(GGA)方法, 对Pt原子与γ-Al₂O₃(001)面的相互作用及迁移性能进行了研究. 分析了各种可能吸附位及吸附构型的松弛和变形现象, 吸附能和迁移能垒的计算结果表明: Pt团簇能够稳定吸附在该表面. Pt原子在表面O位的吸附能明显较高, 这主要是由Pt向基底O原子转移了电子所致. 电荷布居分析表明, Pt原子显电正性, Pt和Al原子之间存在排斥作用, 导致与Al原子产生较弱相互作用. 计算的平均吸附能大小依赖于Pt团簇的大小和形状, 总体趋势是随着Pt原子数增多, 吸附能降低. Pt原子在γ-Al₂O₃(001)表面迁移过程所需克服的迁移能垒最高值为0.51 eV. 随着吸附的Pt原子数增多,更倾向于形成Pt团簇. 因此, Pt原子在γ-Al₂O₃(001)表面的吸附演变不可能形成光滑、均匀平铺的吸附构型, 而在一定条件下容易出现团聚.     

基于RIBLL2的奇特原子核电荷改变截面实验测量进展

电荷半径是原子核最基本的物理观测量之一，反映了原子核内的质子分布。精确的电荷半径测量是研究奇特原子核结构的重要手段。在相对论能区，通过高精度测量原子核的电荷改变截面来提取电荷半径是近年来发展起来的一种新方法，这种方法尤其适于探索产额很低的奇特原子核。自2013年以来，北京航空航天大学-中国科学院近代物理研究所课题组基于兰州第二条次级束流线（RIBLL2），提出并建成原子核电荷改变截面测量平台，研制了相关的TOF-△E探测器系统，开展了轻核区二十余个原子核的电荷改变截面的实验测量工作。介绍了实验平台研制情况、初步结果以及下一步计划。Charge radius is one of the most fundamental observables of atomic nuclei, reflecting the proton distributions in nuclei. Their precision measurements have severed as a key tool to study nuclear structure. Recently, a novel method to deduce charge radii has been developed via precise measurements of charge-changing cross sections(CCCS) of exotic nuclei at relativistic energies. This method is in particular suitable for investigation of exotic nuclei with low production yield. In 2013, we proposed to make such measurements for exotic nuclei lighter than oxygen based on the RIBLL2 beam line. Since then, the TOF-△E detector system for particleidentification(PID) and the CCCS platform have been constructed, continuously optimized and tested. So far CCCS measurements on a carbon target have been performed for more than 20 isotopes. In this contribution, we will introduce the progress of detector development, the progress in PID, and our experimental progress and plan.     

群似酉系统的膨胀性

本文通过研究群似酉系统的若干重要性质,证明了作用在可分Hilbert空间上的任一群似酉系统都具有膨胀性.这一结果将韩德广与Larson关于群酉系统具有膨胀性的结果扩大到了群似酉系统.     

基于小波变换的分水岭图像分割方法

图像分割技术在数字图像处理中占有重要地位.提出了一种基于小波变换的图像分割方法,有效地将小波分析、小波包分解与数学形态学中的分水岭方法相结合.首先,通过小波包对图像有效降噪,在一定程度上减少了分水岭方法的过分割现象.然后利用小波变换得到的梯度向量进行分水岭变换,有效保持边缘信息.实验结果证明该算法是可行的,与基于形态梯度的分割结果相比,得到了较好的分割效果.     

Low power consumption bipolar resistive switching characteristics of ZnO-based memory devices

Ag/ZnO/Pt structure resistive switching devices are fabricated by radio frequency (RF) magnetron sputtering at room temperature. The memory devices exhibit stable and reversible resistive switching behavior. The ratio of high resistance state to low resistance state can reach as high as 10 2 . The retention measurement indicates that the memory property of these devices can be maintained for a long time (over 10 4 s under 0.1-V durable stress). Moreover, the operation voltages are very low, -0.4 V (OFF state) and 0.8 V (ON state). A high-voltage forming process is not required in the initial state, and multi-step reset process is demonstrated. Resistive switching device with the Ag/ZnO/ITO structure is constructed for comparison with the Ag/ZnO/Pt device.